JP2001256775A5 - - Google Patents

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Publication number
JP2001256775A5
JP2001256775A5 JP2000066689A JP2000066689A JP2001256775A5 JP 2001256775 A5 JP2001256775 A5 JP 2001256775A5 JP 2000066689 A JP2000066689 A JP 2000066689A JP 2000066689 A JP2000066689 A JP 2000066689A JP 2001256775 A5 JP2001256775 A5 JP 2001256775A5
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JP
Japan
Prior art keywords
power supply
circuit
block
voltage
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000066689A
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English (en)
Japanese (ja)
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JP3916837B2 (ja
JP2001256775A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000066689A priority Critical patent/JP3916837B2/ja
Priority claimed from JP2000066689A external-priority patent/JP3916837B2/ja
Priority to US09/799,694 priority patent/US6643162B2/en
Priority to TW090105317A priority patent/TW488060B/zh
Publication of JP2001256775A publication Critical patent/JP2001256775A/ja
Priority to US10/676,004 priority patent/US6906944B2/en
Publication of JP2001256775A5 publication Critical patent/JP2001256775A5/ja
Application granted granted Critical
Publication of JP3916837B2 publication Critical patent/JP3916837B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000066689A 2000-03-10 2000-03-10 強誘電体メモリ Expired - Fee Related JP3916837B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000066689A JP3916837B2 (ja) 2000-03-10 2000-03-10 強誘電体メモリ
US09/799,694 US6643162B2 (en) 2000-03-10 2001-03-07 Ferroelectric memory having a device responsive to current lowering
TW090105317A TW488060B (en) 2000-03-10 2001-03-07 Ferroelectric memory
US10/676,004 US6906944B2 (en) 2000-03-10 2003-10-02 Ferroelectric memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000066689A JP3916837B2 (ja) 2000-03-10 2000-03-10 強誘電体メモリ

Publications (3)

Publication Number Publication Date
JP2001256775A JP2001256775A (ja) 2001-09-21
JP2001256775A5 true JP2001256775A5 (enExample) 2005-05-12
JP3916837B2 JP3916837B2 (ja) 2007-05-23

Family

ID=18586009

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000066689A Expired - Fee Related JP3916837B2 (ja) 2000-03-10 2000-03-10 強誘電体メモリ

Country Status (3)

Country Link
US (2) US6643162B2 (enExample)
JP (1) JP3916837B2 (enExample)
TW (1) TW488060B (enExample)

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US7212431B2 (en) * 2004-12-29 2007-05-01 Hynix Semiconductor Inc. Nonvolatile ferroelectric memory device and control method thereof
KR100665844B1 (ko) * 2005-01-04 2007-01-09 삼성전자주식회사 강유전체 메모리 장치 및 그의 구동방법
US7589584B1 (en) * 2005-04-01 2009-09-15 Altera Corporation Programmable voltage regulator with dynamic recovery circuits
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JP2007251351A (ja) * 2006-03-14 2007-09-27 Renesas Technology Corp 半導体装置
JP4996277B2 (ja) 2007-02-09 2012-08-08 株式会社東芝 半導体記憶システム
KR101071212B1 (ko) * 2007-05-18 2011-10-10 후지쯔 세미컨덕터 가부시키가이샤 반도체 메모리
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JP2009032324A (ja) * 2007-07-26 2009-02-12 Spansion Llc 複数のメモリブロックを備える不揮発性記憶装置
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US8031549B2 (en) * 2008-09-19 2011-10-04 Freescale Semiconductor, Inc. Integrated circuit having boosted array voltage and method therefor
JP2010097633A (ja) * 2008-10-14 2010-04-30 Toshiba Corp 半導体記憶装置
US8072237B1 (en) * 2009-06-04 2011-12-06 Altera Corporation Computer-aided design tools and memory element power supply circuitry for selectively overdriving circuit blocks
JP4908560B2 (ja) * 2009-08-31 2012-04-04 株式会社東芝 強誘電体メモリ及びメモリシステム
US8164964B2 (en) * 2009-09-16 2012-04-24 Arm Limited Boosting voltage levels applied to an access control line when accessing storage cells in a memory
DE102010011749B4 (de) 2010-03-17 2018-05-03 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung und Verfahren zur FRAM-Spannungsversorgungsverwaltung
US8120984B2 (en) * 2010-03-23 2012-02-21 Ememory Technology Inc. High-voltage selecting circuit which can generate an output voltage without a voltage drop
US8437169B2 (en) * 2010-12-20 2013-05-07 Texas Instruments Incorporated Fast response circuits and methods for FRAM power loss protection
JP2013077962A (ja) * 2011-09-30 2013-04-25 Renesas Electronics Corp 論理回路、半導体集積回路
JP2013191262A (ja) * 2012-03-15 2013-09-26 Elpida Memory Inc 半導体装置
US9444460B1 (en) 2013-11-22 2016-09-13 Altera Corporation Integrated circuits with programmable overdrive capabilities
JP6287609B2 (ja) * 2014-06-11 2018-03-07 株式会社ソシオネクスト 半導体装置及び半導体装置の設計方法
US10121534B1 (en) 2015-12-18 2018-11-06 Altera Corporation Integrated circuit with overdriven and underdriven pass gates
KR20180047835A (ko) * 2016-11-01 2018-05-10 에스케이하이닉스 주식회사 저항성 메모리 장치
JP6389937B1 (ja) * 2017-08-29 2018-09-12 力晶科技股▲ふん▼有限公司 電源制御回路及び電源制御回路を備えた論理回路装置
US10229727B1 (en) * 2018-03-13 2019-03-12 Micron Technology, Inc. Apparatus and method for controlling erasing data in ferroelectric memory cells
US10600468B2 (en) * 2018-08-13 2020-03-24 Wuxi Petabyte Technologies Co, Ltd. Methods for operating ferroelectric memory cells each having multiple capacitors
US11476260B2 (en) 2019-02-27 2022-10-18 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
US10847201B2 (en) 2019-02-27 2020-11-24 Kepler Computing Inc. High-density low voltage non-volatile differential memory bit-cell with shared plate line
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US11729991B1 (en) 2021-11-01 2023-08-15 Kepler Computing Inc. Common mode compensation for non-linear polar material based differential memory bit-cell
US11482270B1 (en) 2021-11-17 2022-10-25 Kepler Computing Inc. Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic
US12327581B2 (en) * 2021-12-21 2025-06-10 Intel Corporation Embedded memory IC's with power supply droop circuitry coupled to ferroelectric capacitors
US12108609B1 (en) 2022-03-07 2024-10-01 Kepler Computing Inc. Memory bit-cell with stacked and folded planar capacitors
US12324163B1 (en) 2022-03-15 2025-06-03 Kepler Computing Inc. Planar capacitors with shared electrode and methods of fabrication
US20230395134A1 (en) 2022-06-03 2023-12-07 Kepler Computing Inc. Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell
US12324162B1 (en) 2022-06-17 2025-06-03 Kepler Computing Inc. Stacked capacitors with shared electrodes and methods of fabrication
US12300297B1 (en) 2022-08-05 2025-05-13 Kepler Computing Inc. Memory array with buried or backside word-line
US12062584B1 (en) 2022-10-28 2024-08-13 Kepler Computing Inc. Iterative method of multilayer stack development for device applications
US11741428B1 (en) 2022-12-23 2023-08-29 Kepler Computing Inc. Iterative monetization of process development of non-linear polar material and devices
US12347476B1 (en) 2022-12-27 2025-07-01 Kepler Computing Inc. Apparatus and method to improve sensing noise margin in a non-linear polar material based bit-cell
US12334127B2 (en) 2023-01-30 2025-06-17 Kepler Computing Inc. Non-linear polar material based multi-capacitor high density bit-cell
US11765908B1 (en) 2023-02-10 2023-09-19 Kepler Computing Inc. Memory device fabrication through wafer bonding
US20240274651A1 (en) 2023-02-10 2024-08-15 Kepler Computing Inc. Method of forming stacked capacitors through wafer bonding

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JP3961680B2 (ja) * 1998-06-30 2007-08-22 株式会社東芝 半導体記憶装置
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JP3309822B2 (ja) * 1999-01-12 2002-07-29 日本電気株式会社 半導体記憶装置及びその試験方法
JP2002042496A (ja) * 2000-07-26 2002-02-08 Matsushita Electric Ind Co Ltd 強誘電体メモリ

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