JP3916837B2 - 強誘電体メモリ - Google Patents

強誘電体メモリ Download PDF

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Publication number
JP3916837B2
JP3916837B2 JP2000066689A JP2000066689A JP3916837B2 JP 3916837 B2 JP3916837 B2 JP 3916837B2 JP 2000066689 A JP2000066689 A JP 2000066689A JP 2000066689 A JP2000066689 A JP 2000066689A JP 3916837 B2 JP3916837 B2 JP 3916837B2
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JP
Japan
Prior art keywords
power supply
circuit
voltage
block
switch
Prior art date
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Expired - Fee Related
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JP2000066689A
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English (en)
Japanese (ja)
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JP2001256775A (ja
JP2001256775A5 (enExample
Inventor
義昭 竹内
幸人 大脇
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Toshiba Corp
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Toshiba Corp
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Priority to JP2000066689A priority Critical patent/JP3916837B2/ja
Priority to TW090105317A priority patent/TW488060B/zh
Priority to US09/799,694 priority patent/US6643162B2/en
Publication of JP2001256775A publication Critical patent/JP2001256775A/ja
Priority to US10/676,004 priority patent/US6906944B2/en
Publication of JP2001256775A5 publication Critical patent/JP2001256775A5/ja
Application granted granted Critical
Publication of JP3916837B2 publication Critical patent/JP3916837B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP2000066689A 2000-03-10 2000-03-10 強誘電体メモリ Expired - Fee Related JP3916837B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2000066689A JP3916837B2 (ja) 2000-03-10 2000-03-10 強誘電体メモリ
TW090105317A TW488060B (en) 2000-03-10 2001-03-07 Ferroelectric memory
US09/799,694 US6643162B2 (en) 2000-03-10 2001-03-07 Ferroelectric memory having a device responsive to current lowering
US10/676,004 US6906944B2 (en) 2000-03-10 2003-10-02 Ferroelectric memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000066689A JP3916837B2 (ja) 2000-03-10 2000-03-10 強誘電体メモリ

Publications (3)

Publication Number Publication Date
JP2001256775A JP2001256775A (ja) 2001-09-21
JP2001256775A5 JP2001256775A5 (enExample) 2005-05-12
JP3916837B2 true JP3916837B2 (ja) 2007-05-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000066689A Expired - Fee Related JP3916837B2 (ja) 2000-03-10 2000-03-10 強誘電体メモリ

Country Status (3)

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US (2) US6643162B2 (enExample)
JP (1) JP3916837B2 (enExample)
TW (1) TW488060B (enExample)

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EP1187140A3 (en) * 2000-09-05 2002-09-11 Matsushita Electric Industrial Co., Ltd. Method for driving semiconductor memory
JP3951773B2 (ja) * 2002-03-28 2007-08-01 富士通株式会社 リーク電流遮断回路を有する半導体集積回路
US6735117B2 (en) * 2002-07-01 2004-05-11 Honeywell International Inc. Hold-up power supply for flash memory
KR100469153B1 (ko) * 2002-08-30 2005-02-02 주식회사 하이닉스반도체 강유전체 메모리 장치
JP2005101522A (ja) * 2003-08-21 2005-04-14 Matsushita Electric Ind Co Ltd 半導体集積回路装置
JP2005115857A (ja) * 2003-10-10 2005-04-28 Sony Corp ファイル記憶装置
JP2008500601A (ja) * 2004-05-25 2008-01-10 松下電器産業株式会社 半導体メモリカード
JP4197678B2 (ja) * 2004-12-24 2008-12-17 富士通マイクロエレクトロニクス株式会社 半導体装置
US7212431B2 (en) * 2004-12-29 2007-05-01 Hynix Semiconductor Inc. Nonvolatile ferroelectric memory device and control method thereof
KR100665844B1 (ko) * 2005-01-04 2007-01-09 삼성전자주식회사 강유전체 메모리 장치 및 그의 구동방법
US7589584B1 (en) * 2005-04-01 2009-09-15 Altera Corporation Programmable voltage regulator with dynamic recovery circuits
JP4822828B2 (ja) * 2005-12-13 2011-11-24 ルネサスエレクトロニクス株式会社 不揮発性記憶装置
JP2007251351A (ja) * 2006-03-14 2007-09-27 Renesas Technology Corp 半導体装置
JP4996277B2 (ja) 2007-02-09 2012-08-08 株式会社東芝 半導体記憶システム
JP5024374B2 (ja) * 2007-05-18 2012-09-12 富士通セミコンダクター株式会社 半導体メモリ
JP2009003991A (ja) * 2007-06-19 2009-01-08 Toshiba Corp 半導体装置及び半導体メモリテスト装置
JP2009032324A (ja) * 2007-07-26 2009-02-12 Spansion Llc 複数のメモリブロックを備える不揮発性記憶装置
JP5057350B2 (ja) * 2008-02-27 2012-10-24 パナソニック株式会社 半導体集積回路、およびこれを備えた各種装置
US8031549B2 (en) * 2008-09-19 2011-10-04 Freescale Semiconductor, Inc. Integrated circuit having boosted array voltage and method therefor
JP2010097633A (ja) * 2008-10-14 2010-04-30 Toshiba Corp 半導体記憶装置
US8072237B1 (en) 2009-06-04 2011-12-06 Altera Corporation Computer-aided design tools and memory element power supply circuitry for selectively overdriving circuit blocks
JP4908560B2 (ja) * 2009-08-31 2012-04-04 株式会社東芝 強誘電体メモリ及びメモリシステム
US8164964B2 (en) * 2009-09-16 2012-04-24 Arm Limited Boosting voltage levels applied to an access control line when accessing storage cells in a memory
DE102010011749B4 (de) * 2010-03-17 2018-05-03 Texas Instruments Deutschland Gmbh Elektronische Vorrichtung und Verfahren zur FRAM-Spannungsversorgungsverwaltung
US8120984B2 (en) * 2010-03-23 2012-02-21 Ememory Technology Inc. High-voltage selecting circuit which can generate an output voltage without a voltage drop
US8437169B2 (en) * 2010-12-20 2013-05-07 Texas Instruments Incorporated Fast response circuits and methods for FRAM power loss protection
JP2013077962A (ja) * 2011-09-30 2013-04-25 Renesas Electronics Corp 論理回路、半導体集積回路
JP2013191262A (ja) * 2012-03-15 2013-09-26 Elpida Memory Inc 半導体装置
US9444460B1 (en) 2013-11-22 2016-09-13 Altera Corporation Integrated circuits with programmable overdrive capabilities
JP6287609B2 (ja) * 2014-06-11 2018-03-07 株式会社ソシオネクスト 半導体装置及び半導体装置の設計方法
US10121534B1 (en) 2015-12-18 2018-11-06 Altera Corporation Integrated circuit with overdriven and underdriven pass gates
KR20180047835A (ko) * 2016-11-01 2018-05-10 에스케이하이닉스 주식회사 저항성 메모리 장치
JP6389937B1 (ja) * 2017-08-29 2018-09-12 力晶科技股▲ふん▼有限公司 電源制御回路及び電源制御回路を備えた論理回路装置
US10229727B1 (en) * 2018-03-13 2019-03-12 Micron Technology, Inc. Apparatus and method for controlling erasing data in ferroelectric memory cells
US10600468B2 (en) * 2018-08-13 2020-03-24 Wuxi Petabyte Technologies Co, Ltd. Methods for operating ferroelectric memory cells each having multiple capacitors
US10847201B2 (en) 2019-02-27 2020-11-24 Kepler Computing Inc. High-density low voltage non-volatile differential memory bit-cell with shared plate line
US11482529B2 (en) 2019-02-27 2022-10-25 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US11751403B1 (en) 2021-11-01 2023-09-05 Kepler Computing Inc. Common mode compensation for 2T1C non-linear polar material based memory bit-cell
US11482270B1 (en) * 2021-11-17 2022-10-25 Kepler Computing Inc. Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic
US12327581B2 (en) * 2021-12-21 2025-06-10 Intel Corporation Embedded memory IC's with power supply droop circuitry coupled to ferroelectric capacitors
US12108609B1 (en) 2022-03-07 2024-10-01 Kepler Computing Inc. Memory bit-cell with stacked and folded planar capacitors
US12324163B1 (en) 2022-03-15 2025-06-03 Kepler Computing Inc. Planar capacitors with shared electrode and methods of fabrication
US20230395134A1 (en) 2022-06-03 2023-12-07 Kepler Computing Inc. Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell
US12289894B1 (en) 2022-06-17 2025-04-29 Kepler Computing Inc. Method of fabricating transistors and stacked planar capacitors for memory and logic applications
US12300297B1 (en) 2022-08-05 2025-05-13 Kepler Computing Inc. Memory array with buried or backside word-line
US12062584B1 (en) 2022-10-28 2024-08-13 Kepler Computing Inc. Iterative method of multilayer stack development for device applications
US11741428B1 (en) 2022-12-23 2023-08-29 Kepler Computing Inc. Iterative monetization of process development of non-linear polar material and devices
US12347476B1 (en) 2022-12-27 2025-07-01 Kepler Computing Inc. Apparatus and method to improve sensing noise margin in a non-linear polar material based bit-cell
US12334127B2 (en) 2023-01-30 2025-06-17 Kepler Computing Inc. Non-linear polar material based multi-capacitor high density bit-cell
US11765908B1 (en) 2023-02-10 2023-09-19 Kepler Computing Inc. Memory device fabrication through wafer bonding
US20240274651A1 (en) 2023-02-10 2024-08-15 Kepler Computing Inc. Method of forming stacked capacitors through wafer bonding

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
US633517A (en) * 1899-06-03 1899-09-19 Thorber Thorvalson Car-coupling.
JP2768172B2 (ja) * 1992-09-30 1998-06-25 日本電気株式会社 半導体メモリ装置
US5532953A (en) * 1995-03-29 1996-07-02 Ramtron International Corporation Ferroelectric memory sensing method using distinct read and write voltages
JP3497601B2 (ja) * 1995-04-17 2004-02-16 松下電器産業株式会社 半導体集積回路
KR100200922B1 (ko) * 1995-12-27 1999-06-15 윤종용 반도체 메모리장치의 펌핑전압발생기
US5703804A (en) 1996-09-26 1997-12-30 Sharp Kabushiki K.K. Semiconductor memory device
JP3961680B2 (ja) * 1998-06-30 2007-08-22 株式会社東芝 半導体記憶装置
JP2000123578A (ja) 1998-10-13 2000-04-28 Sharp Corp 半導体メモリ装置
JP3309822B2 (ja) * 1999-01-12 2002-07-29 日本電気株式会社 半導体記憶装置及びその試験方法
JP2002042496A (ja) * 2000-07-26 2002-02-08 Matsushita Electric Ind Co Ltd 強誘電体メモリ

Also Published As

Publication number Publication date
US6643162B2 (en) 2003-11-04
TW488060B (en) 2002-05-21
US20040062115A1 (en) 2004-04-01
US6906944B2 (en) 2005-06-14
JP2001256775A (ja) 2001-09-21
US20010022741A1 (en) 2001-09-20

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