TW488060B - Ferroelectric memory - Google Patents

Ferroelectric memory Download PDF

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Publication number
TW488060B
TW488060B TW090105317A TW90105317A TW488060B TW 488060 B TW488060 B TW 488060B TW 090105317 A TW090105317 A TW 090105317A TW 90105317 A TW90105317 A TW 90105317A TW 488060 B TW488060 B TW 488060B
Authority
TW
Taiwan
Prior art keywords
memory
power
power supply
circuit
block
Prior art date
Application number
TW090105317A
Other languages
English (en)
Chinese (zh)
Inventor
Yoshiaki Takeuchi
Yukihito Oowaki
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of TW488060B publication Critical patent/TW488060B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW090105317A 2000-03-10 2001-03-07 Ferroelectric memory TW488060B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000066689A JP3916837B2 (ja) 2000-03-10 2000-03-10 強誘電体メモリ

Publications (1)

Publication Number Publication Date
TW488060B true TW488060B (en) 2002-05-21

Family

ID=18586009

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090105317A TW488060B (en) 2000-03-10 2001-03-07 Ferroelectric memory

Country Status (3)

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US (2) US6643162B2 (enExample)
JP (1) JP3916837B2 (enExample)
TW (1) TW488060B (enExample)

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TWI675291B (zh) * 2017-08-29 2019-10-21 力晶積成電子製造股份有限公司 電源控制電路以及具備電源控制電路的邏輯電路裝置

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US10229727B1 (en) 2018-03-13 2019-03-12 Micron Technology, Inc. Apparatus and method for controlling erasing data in ferroelectric memory cells
US10600468B2 (en) * 2018-08-13 2020-03-24 Wuxi Petabyte Technologies Co, Ltd. Methods for operating ferroelectric memory cells each having multiple capacitors
US11476260B2 (en) 2019-02-27 2022-10-18 Kepler Computing Inc. High-density low voltage non-volatile memory with unidirectional plate-line and bit-line and pillar capacitor
US10847201B2 (en) 2019-02-27 2020-11-24 Kepler Computing Inc. High-density low voltage non-volatile differential memory bit-cell with shared plate line
US11527277B1 (en) 2021-06-04 2022-12-13 Kepler Computing Inc. High-density low voltage ferroelectric memory bit-cell
US11696451B1 (en) 2021-11-01 2023-07-04 Kepler Computing Inc. Common mode compensation for non-linear polar material based 1T1C memory bit-cell
US11482270B1 (en) * 2021-11-17 2022-10-25 Kepler Computing Inc. Pulsing scheme for a ferroelectric memory bit-cell to minimize read or write disturb effect and refresh logic
US12327581B2 (en) * 2021-12-21 2025-06-10 Intel Corporation Embedded memory IC's with power supply droop circuitry coupled to ferroelectric capacitors
US12108609B1 (en) 2022-03-07 2024-10-01 Kepler Computing Inc. Memory bit-cell with stacked and folded planar capacitors
US12324163B1 (en) 2022-03-15 2025-06-03 Kepler Computing Inc. Planar capacitors with shared electrode and methods of fabrication
US20230395134A1 (en) 2022-06-03 2023-12-07 Kepler Computing Inc. Write disturb mitigation for non-linear polar material based multi-capacitor bit-cell
US12289894B1 (en) 2022-06-17 2025-04-29 Kepler Computing Inc. Method of fabricating transistors and stacked planar capacitors for memory and logic applications
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US12062584B1 (en) 2022-10-28 2024-08-13 Kepler Computing Inc. Iterative method of multilayer stack development for device applications
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI675291B (zh) * 2017-08-29 2019-10-21 力晶積成電子製造股份有限公司 電源控制電路以及具備電源控制電路的邏輯電路裝置

Also Published As

Publication number Publication date
US20010022741A1 (en) 2001-09-20
JP2001256775A (ja) 2001-09-21
JP3916837B2 (ja) 2007-05-23
US20040062115A1 (en) 2004-04-01
US6643162B2 (en) 2003-11-04
US6906944B2 (en) 2005-06-14

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