JP2001184613A5 - - Google Patents

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Publication number
JP2001184613A5
JP2001184613A5 JP1999366240A JP36624099A JP2001184613A5 JP 2001184613 A5 JP2001184613 A5 JP 2001184613A5 JP 1999366240 A JP1999366240 A JP 1999366240A JP 36624099 A JP36624099 A JP 36624099A JP 2001184613 A5 JP2001184613 A5 JP 2001184613A5
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JP
Japan
Prior art keywords
layer
magnetic
recording medium
head
ferromagnetic
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Application number
JP1999366240A
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English (en)
Japanese (ja)
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JP2001184613A (ja
JP3817399B2 (ja
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Priority to JP36624099A priority Critical patent/JP3817399B2/ja
Priority claimed from JP36624099A external-priority patent/JP3817399B2/ja
Priority to US09/741,804 priority patent/US20010006444A1/en
Publication of JP2001184613A publication Critical patent/JP2001184613A/ja
Publication of JP2001184613A5 publication Critical patent/JP2001184613A5/ja
Application granted granted Critical
Publication of JP3817399B2 publication Critical patent/JP3817399B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP36624099A 1999-12-24 1999-12-24 磁気抵抗センサー Expired - Fee Related JP3817399B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP36624099A JP3817399B2 (ja) 1999-12-24 1999-12-24 磁気抵抗センサー
US09/741,804 US20010006444A1 (en) 1999-12-24 2000-12-22 Magnetoresistive sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36624099A JP3817399B2 (ja) 1999-12-24 1999-12-24 磁気抵抗センサー

Publications (3)

Publication Number Publication Date
JP2001184613A JP2001184613A (ja) 2001-07-06
JP2001184613A5 true JP2001184613A5 (enExample) 2004-10-14
JP3817399B2 JP3817399B2 (ja) 2006-09-06

Family

ID=18486284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36624099A Expired - Fee Related JP3817399B2 (ja) 1999-12-24 1999-12-24 磁気抵抗センサー

Country Status (2)

Country Link
US (1) US20010006444A1 (enExample)
JP (1) JP3817399B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001222803A (ja) 2000-02-03 2001-08-17 Tdk Corp 磁気変換素子および薄膜磁気ヘッド
US6888703B2 (en) * 2001-09-17 2005-05-03 Headway Technologies, Inc. Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads
US6758950B2 (en) * 2002-01-14 2004-07-06 Seagate Technology Llc Controlled magnetron shape for uniformly sputtered thin film
US6913782B2 (en) * 2002-12-03 2005-07-05 Hitachi Global Storage Technologies Netherlands B.V. Fabrication of self-aligned reflective/protective overlays on magnetoresistance sensors, and the sensors
US7085110B2 (en) * 2003-07-07 2006-08-01 Hitachi Global Storage Technologies Netherlands, B.V. Thermally stable oxidized bias layer structure for magnetoresistive magnetic head for a hard disk drive
US7446985B2 (en) * 2003-12-19 2008-11-04 Agency For Science Technology And Research Epitaxial oxide cap layers for enhancing GMR performance
JP2006196745A (ja) * 2005-01-14 2006-07-27 Alps Electric Co Ltd 磁気検出素子、およびその製造方法
JP5292726B2 (ja) 2007-06-13 2013-09-18 ヤマハ株式会社 磁気センサ及びその製造方法
JP2013115413A (ja) 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP2013115400A (ja) 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
US11009570B2 (en) * 2018-11-16 2021-05-18 Samsung Electronics Co., Ltd. Hybrid oxide/metal cap layer for boron-free free layer

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US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
JPH0536032A (ja) * 1991-08-01 1993-02-12 Hitachi Ltd 磁気抵抗効果型ヘツド及びその製造方法
JP3022023B2 (ja) * 1992-04-13 2000-03-15 株式会社日立製作所 磁気記録再生装置
US5422571A (en) * 1993-02-08 1995-06-06 International Business Machines Corporation Magnetoresistive spin valve sensor having a nonmagnetic back layer
US5869963A (en) * 1996-09-12 1999-02-09 Alps Electric Co., Ltd. Magnetoresistive sensor and head
CN100336934C (zh) * 1996-11-20 2007-09-12 株式会社东芝 抗铁磁材料膜和包括其的磁阻效应器件
JPH10154311A (ja) * 1996-11-21 1998-06-09 Nec Corp 磁気抵抗効果素子およびシールド型磁気抵抗効果センサ
JP3827789B2 (ja) * 1996-12-27 2006-09-27 株式会社東芝 磁気抵抗効果ヘッド
JP2970590B2 (ja) * 1997-05-14 1999-11-02 日本電気株式会社 磁気抵抗効果素子並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム
US6069769A (en) * 1997-09-30 2000-05-30 International Business Machines Corporation Air bearing slider having rounded corners
JPH11161921A (ja) * 1997-12-01 1999-06-18 Nec Corp 磁気抵抗効果素子およびその製造方法
US6258470B1 (en) * 1998-01-16 2001-07-10 Matsushita Electric Industrial Co., Ltd. Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film
JP2925542B1 (ja) * 1998-03-12 1999-07-28 ティーディーケイ株式会社 磁気抵抗効果膜および磁気抵抗効果型ヘッド
JPH11273033A (ja) * 1998-03-18 1999-10-08 Tdk Corp 磁気抵抗効果多層膜及び該磁気抵抗効果多層膜を備えた薄膜磁気ヘッド
DE19934009B4 (de) * 1998-07-21 2006-11-23 Alps Electric Co., Ltd. Magnetowiderstands-Dünnschichtelement vom Drehventil-Typ
JP2000040212A (ja) * 1998-07-24 2000-02-08 Alps Electric Co Ltd スピンバルブ型薄膜素子
JP3959881B2 (ja) * 1999-02-08 2007-08-15 Ｔｄｋ株式会社 磁気抵抗効果センサの製造方法
US6268985B1 (en) * 1999-03-30 2001-07-31 International Business Machines Corporation Read head having spin valve sensor with improved capping layer
US6208491B1 (en) * 1999-05-26 2001-03-27 International Business Machines Corporation Spin valve with improved capping layer structure
US6219208B1 (en) * 1999-06-25 2001-04-17 International Business Machines Corporation Dual spin valve sensor with self-pinned layer specular reflector
JP2001110016A (ja) * 1999-10-05 2001-04-20 Alps Electric Co Ltd スピンバルブ型薄膜磁気素子およびその製造方法、およびこのスピンバルブ型薄膜磁気素子を備えた薄膜磁気ヘッド
JP3623417B2 (ja) * 1999-12-03 2005-02-23 アルプス電気株式会社 スピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド
US6430013B1 (en) * 1999-12-06 2002-08-06 International Business Machines Corporation Magnetoresistive structure having improved thermal stability via magnetic barrier layer within a free layer
US6783635B2 (en) * 1999-12-09 2004-08-31 International Business Machines Corporation Spin valve sensor free layer structure with a cobalt based layer that promotes magnetic stability and high magnetoresistance
TW495745B (en) * 2000-03-09 2002-07-21 Koninkl Philips Electronics Nv Magnetic field element having a biasing magnetic layer structure

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