JP3817399B2 - 磁気抵抗センサー - Google Patents

磁気抵抗センサー Download PDF

Info

Publication number
JP3817399B2
JP3817399B2 JP36624099A JP36624099A JP3817399B2 JP 3817399 B2 JP3817399 B2 JP 3817399B2 JP 36624099 A JP36624099 A JP 36624099A JP 36624099 A JP36624099 A JP 36624099A JP 3817399 B2 JP3817399 B2 JP 3817399B2
Authority
JP
Japan
Prior art keywords
layer
film
magnetic
oxide
magnetic head
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP36624099A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001184613A5 (enExample
JP2001184613A (ja
Inventor
純 早川
裕之 星屋
賢一 目黒
克朗 渡辺
Original Assignee
株式会社日立グローバルストレージテクノロジーズ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社日立グローバルストレージテクノロジーズ filed Critical 株式会社日立グローバルストレージテクノロジーズ
Priority to JP36624099A priority Critical patent/JP3817399B2/ja
Priority to US09/741,804 priority patent/US20010006444A1/en
Publication of JP2001184613A publication Critical patent/JP2001184613A/ja
Publication of JP2001184613A5 publication Critical patent/JP2001184613A5/ja
Application granted granted Critical
Publication of JP3817399B2 publication Critical patent/JP3817399B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
JP36624099A 1999-12-24 1999-12-24 磁気抵抗センサー Expired - Fee Related JP3817399B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP36624099A JP3817399B2 (ja) 1999-12-24 1999-12-24 磁気抵抗センサー
US09/741,804 US20010006444A1 (en) 1999-12-24 2000-12-22 Magnetoresistive sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP36624099A JP3817399B2 (ja) 1999-12-24 1999-12-24 磁気抵抗センサー

Publications (3)

Publication Number Publication Date
JP2001184613A JP2001184613A (ja) 2001-07-06
JP2001184613A5 JP2001184613A5 (enExample) 2004-10-14
JP3817399B2 true JP3817399B2 (ja) 2006-09-06

Family

ID=18486284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP36624099A Expired - Fee Related JP3817399B2 (ja) 1999-12-24 1999-12-24 磁気抵抗センサー

Country Status (2)

Country Link
US (1) US20010006444A1 (enExample)
JP (1) JP3817399B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001222803A (ja) 2000-02-03 2001-08-17 Tdk Corp 磁気変換素子および薄膜磁気ヘッド
US6888703B2 (en) * 2001-09-17 2005-05-03 Headway Technologies, Inc. Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads
US6758950B2 (en) * 2002-01-14 2004-07-06 Seagate Technology Llc Controlled magnetron shape for uniformly sputtered thin film
US6913782B2 (en) * 2002-12-03 2005-07-05 Hitachi Global Storage Technologies Netherlands B.V. Fabrication of self-aligned reflective/protective overlays on magnetoresistance sensors, and the sensors
US7085110B2 (en) * 2003-07-07 2006-08-01 Hitachi Global Storage Technologies Netherlands, B.V. Thermally stable oxidized bias layer structure for magnetoresistive magnetic head for a hard disk drive
US7446985B2 (en) * 2003-12-19 2008-11-04 Agency For Science Technology And Research Epitaxial oxide cap layers for enhancing GMR performance
JP2006196745A (ja) * 2005-01-14 2006-07-27 Alps Electric Co Ltd 磁気検出素子、およびその製造方法
JP5292726B2 (ja) * 2007-06-13 2013-09-18 ヤマハ株式会社 磁気センサ及びその製造方法
JP2013115413A (ja) 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP2013115400A (ja) * 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
US11009570B2 (en) * 2018-11-16 2021-05-18 Samsung Electronics Co., Ltd. Hybrid oxide/metal cap layer for boron-free free layer

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
JPH0536032A (ja) * 1991-08-01 1993-02-12 Hitachi Ltd 磁気抵抗効果型ヘツド及びその製造方法
JP3022023B2 (ja) * 1992-04-13 2000-03-15 株式会社日立製作所 磁気記録再生装置
US5422571A (en) * 1993-02-08 1995-06-06 International Business Machines Corporation Magnetoresistive spin valve sensor having a nonmagnetic back layer
US5869963A (en) * 1996-09-12 1999-02-09 Alps Electric Co., Ltd. Magnetoresistive sensor and head
CN1194116C (zh) * 1996-11-20 2005-03-23 东芝株式会社 溅射靶,用其制成的抗铁磁材料膜和磁阻效应器件
JPH10154311A (ja) * 1996-11-21 1998-06-09 Nec Corp 磁気抵抗効果素子およびシールド型磁気抵抗効果センサ
JP3827789B2 (ja) * 1996-12-27 2006-09-27 株式会社東芝 磁気抵抗効果ヘッド
JP2970590B2 (ja) * 1997-05-14 1999-11-02 日本電気株式会社 磁気抵抗効果素子並びにこれを用いた磁気抵抗効果センサ、磁気抵抗検出システム及び磁気記憶システム
US6069769A (en) * 1997-09-30 2000-05-30 International Business Machines Corporation Air bearing slider having rounded corners
JPH11161921A (ja) * 1997-12-01 1999-06-18 Nec Corp 磁気抵抗効果素子およびその製造方法
US6258470B1 (en) * 1998-01-16 2001-07-10 Matsushita Electric Industrial Co., Ltd. Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film
JP2925542B1 (ja) * 1998-03-12 1999-07-28 ティーディーケイ株式会社 磁気抵抗効果膜および磁気抵抗効果型ヘッド
JPH11273033A (ja) * 1998-03-18 1999-10-08 Tdk Corp 磁気抵抗効果多層膜及び該磁気抵抗効果多層膜を備えた薄膜磁気ヘッド
US6424506B1 (en) * 1998-07-21 2002-07-23 Alps Electric Co., Ltd. Spin-valve magnetoresistive thin film element
JP2000040212A (ja) * 1998-07-24 2000-02-08 Alps Electric Co Ltd スピンバルブ型薄膜素子
JP3959881B2 (ja) * 1999-02-08 2007-08-15 Ｔｄｋ株式会社 磁気抵抗効果センサの製造方法
US6268985B1 (en) * 1999-03-30 2001-07-31 International Business Machines Corporation Read head having spin valve sensor with improved capping layer
US6208491B1 (en) * 1999-05-26 2001-03-27 International Business Machines Corporation Spin valve with improved capping layer structure
US6219208B1 (en) * 1999-06-25 2001-04-17 International Business Machines Corporation Dual spin valve sensor with self-pinned layer specular reflector
JP2001110016A (ja) * 1999-10-05 2001-04-20 Alps Electric Co Ltd スピンバルブ型薄膜磁気素子およびその製造方法、およびこのスピンバルブ型薄膜磁気素子を備えた薄膜磁気ヘッド
JP3623417B2 (ja) * 1999-12-03 2005-02-23 アルプス電気株式会社 スピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド
US6430013B1 (en) * 1999-12-06 2002-08-06 International Business Machines Corporation Magnetoresistive structure having improved thermal stability via magnetic barrier layer within a free layer
US6783635B2 (en) * 1999-12-09 2004-08-31 International Business Machines Corporation Spin valve sensor free layer structure with a cobalt based layer that promotes magnetic stability and high magnetoresistance
TW495745B (en) * 2000-03-09 2002-07-21 Koninkl Philips Electronics Nv Magnetic field element having a biasing magnetic layer structure

Also Published As

Publication number Publication date
US20010006444A1 (en) 2001-07-05
JP2001184613A (ja) 2001-07-06

Similar Documents

Publication Publication Date Title
JP3462832B2 (ja) 磁気抵抗センサ並びにこれを用いた磁気ヘッド及び磁気記録再生装置
JP3291208B2 (ja) 磁気抵抗効果型センサおよびその製造方法とそのセンサを備えた磁気ヘッド
JP4487472B2 (ja) 磁気抵抗効果素子、及びこれを備える磁気ヘッド、磁気記録装置、磁気メモリ
JP3657916B2 (ja) 磁気抵抗効果ヘッドおよび垂直磁気記録再生装置
US7265948B2 (en) Magnetoresistive element with oxide magnetic layers and metal magnetic films deposited thereon
JP2000215414A (ja) 磁気センサ―
US6721147B2 (en) Longitudinally biased magnetoresistance effect magnetic head and magnetic reproducing apparatus
JP2002117508A (ja) 磁気ヘッドおよびその製造方法
JP3603062B2 (ja) 磁気抵抗効果素子とその製造方法、およびこれを用いた磁気デバイス
JP3836294B2 (ja) 磁気ヘッド、及びこれを用いた磁気記録再生装置
JP3817399B2 (ja) 磁気抵抗センサー
US6765769B2 (en) Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head
US6982854B2 (en) Magnetoresistance effect device and magnetoresistance effect head comprising the same, and magnetic recording/reproducing apparatus
JP4469570B2 (ja) 磁気抵抗効果素子、磁気ヘッドおよび磁気記録再生装置
KR100770813B1 (ko) 자기 저항 헤드, 자기 기록 재생 장치 및 자기 저항 헤드 제조 방법
KR100833260B1 (ko) 스핀 밸브 구조의 제조방법
JP4204385B2 (ja) 薄膜磁気ヘッド
JP3420152B2 (ja) 磁気抵抗効果ヘッド及び磁気記録再生装置
JP3774375B2 (ja) 磁気検出素子及びその製造方法、ならびに前記磁気検出素子を用いた薄膜磁気ヘッド
JP3137288B2 (ja) 交換結合膜、磁気抵抗効果素子、磁気抵抗効果型ヘッドおよび磁気抵抗効果素子の製造方法
JP3575672B2 (ja) 磁気抵抗効果膜及び磁気抵抗効果素子
JP3823028B2 (ja) 磁気ヘッド
JP2002150514A (ja) 磁気抵抗効果型磁気ヘッド及び磁気記録再生装置
JP2001338410A (ja) 磁気ディスク装置
JP2003006818A (ja) 反平行に結合した２枚の強磁性膜を用いた磁気抵抗再生ヘッド

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20031128

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050124

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050208

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050406

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051004

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051205

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060307

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20060427

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060427

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060606

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060612

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100616

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees