JP2001127071A5 - - Google Patents

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Publication number
JP2001127071A5
JP2001127071A5 JP2000216848A JP2000216848A JP2001127071A5 JP 2001127071 A5 JP2001127071 A5 JP 2001127071A5 JP 2000216848 A JP2000216848 A JP 2000216848A JP 2000216848 A JP2000216848 A JP 2000216848A JP 2001127071 A5 JP2001127071 A5 JP 2001127071A5
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JP
Japan
Prior art keywords
base
layer
emitter
electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000216848A
Other languages
English (en)
Japanese (ja)
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JP2001127071A (ja
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Publication date
Application filed filed Critical
Priority to JP2000216848A priority Critical patent/JP2001127071A/ja
Priority claimed from JP2000216848A external-priority patent/JP2001127071A/ja
Priority to US09/639,754 priority patent/US6403991B1/en
Publication of JP2001127071A publication Critical patent/JP2001127071A/ja
Priority to US10/026,613 priority patent/US6743691B2/en
Priority to US10/026,968 priority patent/US6573540B2/en
Priority to US10/133,498 priority patent/US6639257B2/en
Publication of JP2001127071A5 publication Critical patent/JP2001127071A5/ja
Pending legal-status Critical Current

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JP2000216848A 1999-08-19 2000-07-18 半導体装置及びその製造方法 Pending JP2001127071A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000216848A JP2001127071A (ja) 1999-08-19 2000-07-18 半導体装置及びその製造方法
US09/639,754 US6403991B1 (en) 1999-08-19 2000-08-15 Semiconductor device and method for fabricating the same
US10/026,613 US6743691B2 (en) 1999-08-19 2001-12-27 Semiconductor device and method for fabricating the same
US10/026,968 US6573540B2 (en) 1999-08-19 2001-12-27 Semiconductor device and method for fabricating the same
US10/133,498 US6639257B2 (en) 1999-08-19 2002-04-29 Hetero-junction bipolar transistor having a dummy electrode

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP23237899 1999-08-19
JP11-232378 1999-08-19
JP2000216848A JP2001127071A (ja) 1999-08-19 2000-07-18 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2001127071A JP2001127071A (ja) 2001-05-11
JP2001127071A5 true JP2001127071A5 (enExample) 2005-02-10

Family

ID=26530425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000216848A Pending JP2001127071A (ja) 1999-08-19 2000-07-18 半導体装置及びその製造方法

Country Status (2)

Country Link
US (4) US6403991B1 (enExample)
JP (1) JP2001127071A (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001127071A (ja) * 1999-08-19 2001-05-11 Hitachi Ltd 半導体装置及びその製造方法
JP4895421B2 (ja) * 2000-12-04 2012-03-14 ルネサスエレクトロニクス株式会社 ヘテロ接合型バイポーラトランジスタの製造方法
US6531722B2 (en) * 2001-02-26 2003-03-11 Sumitomo Electric Industries, Ltd. Bipolar transistor
GB0126895D0 (en) * 2001-11-08 2002-01-02 Denselight Semiconductors Pte Fabrication of a heterojunction bipolar transistor with intergrated mim capaci or
JP3942984B2 (ja) * 2002-08-06 2007-07-11 株式会社ナノテコ バイポーラトランジスタ、マルチフィンガーバイポーラトランジスタ、バイポーラトランジスタ製造用エピタキシャル基板、及びバイポーラトランジスタの製造方法
US20040099879A1 (en) * 2002-11-27 2004-05-27 Win Semiconductors Corp. Heterojunction bipolar transistor power transistor
US6946720B2 (en) * 2003-02-13 2005-09-20 Intersil Americas Inc. Bipolar transistor for an integrated circuit having variable value emitter ballast resistors
JP4489366B2 (ja) * 2003-03-17 2010-06-23 株式会社日立製作所 半導体装置
JP2006019503A (ja) * 2004-07-01 2006-01-19 Sharp Corp 半導体装置
US7397087B2 (en) * 2004-08-06 2008-07-08 International Business Machines Corporation FEOL/MEOL metal resistor for high end CMOS
JP2006156776A (ja) 2004-11-30 2006-06-15 Toshiba Corp 半導体装置
DE102005021450B4 (de) * 2005-05-10 2009-04-23 Atmel Germany Gmbh Integrierter Schaltkreis und Verfahren zur Herstellung eines integrierten Schaltkreises und dessen Verwendung
JP2006325096A (ja) * 2005-05-20 2006-11-30 Matsushita Electric Ind Co Ltd 高周波電力増幅器
DE102007030129A1 (de) * 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
JP5595751B2 (ja) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
JP2013026540A (ja) * 2011-07-25 2013-02-04 Renesas Electronics Corp 半導体集積回路装置
US9679869B2 (en) 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
KR102250612B1 (ko) 2012-06-14 2021-05-10 스카이워크스 솔루션즈, 인코포레이티드 고조파 종단 회로를 포함하는 전력 증폭기 모듈 및 관련된 시스템, 장치, 및 방법
JP5783241B2 (ja) * 2013-12-26 2015-09-24 株式会社村田製作所 半導体装置
JP2021158641A (ja) * 2020-03-30 2021-10-07 株式会社村田製作所 電力増幅素子
JP2022036468A (ja) * 2020-08-24 2022-03-08 株式会社村田製作所 半導体装置
CN114639672B (zh) * 2022-02-28 2025-01-14 北海惠科半导体科技有限公司 偏置电阻内置晶体管的制作方法及偏置电阻内置晶体管

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US3886458A (en) * 1972-12-12 1975-05-27 Sony Corp Frequency converter circuit with integrated injection capacitor
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
US4711701A (en) * 1986-09-16 1987-12-08 Texas Instruments Incorporated Self-aligned transistor method
US5098853A (en) * 1988-11-02 1992-03-24 Hughes Aircraft Company Self-aligned, planar heterojunction bipolar transistor and method of forming the same
JPH0395935A (ja) * 1989-09-07 1991-04-22 Matsushita Electric Ind Co Ltd バイポーラトランジスタおよびその製造方法
US5270223A (en) * 1991-06-28 1993-12-14 Texas Instruments Incorporated Multiple layer wide bandgap collector structure for bipolar transistors
US5162243A (en) * 1991-08-30 1992-11-10 Trw Inc. Method of producing high reliability heterojunction bipolar transistors
JPH05175216A (ja) * 1991-12-24 1993-07-13 Rohm Co Ltd ヘテロ接合バイポーラトランジスタおよびその製法
US5321279A (en) 1992-11-09 1994-06-14 Texas Instruments Incorporated Base ballasting
US5665614A (en) * 1995-06-06 1997-09-09 Hughes Electronics Method for making fully self-aligned submicron heterojunction bipolar transistor
US5672522A (en) * 1996-03-05 1997-09-30 Trw Inc. Method for making selective subcollector heterojunction bipolar transistors
SE519628C2 (sv) * 1997-03-04 2003-03-18 Ericsson Telefon Ab L M Tillverkningsförfarande för halvledarkomponent med deponering av selektivt utformat material,vilket är ogenomträngligt för dopjoner
US5859447A (en) * 1997-05-09 1999-01-12 Yang; Edward S. Heterojunction bipolar transistor having heterostructure ballasting emitter
JP2001127071A (ja) * 1999-08-19 2001-05-11 Hitachi Ltd 半導体装置及びその製造方法

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