JP2003243527A5 - - Google Patents

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Publication number
JP2003243527A5
JP2003243527A5 JP2002038430A JP2002038430A JP2003243527A5 JP 2003243527 A5 JP2003243527 A5 JP 2003243527A5 JP 2002038430 A JP2002038430 A JP 2002038430A JP 2002038430 A JP2002038430 A JP 2002038430A JP 2003243527 A5 JP2003243527 A5 JP 2003243527A5
Authority
JP
Japan
Prior art keywords
layer
manufacturing
semiconductor device
bipolar transistor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002038430A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003243527A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002038430A priority Critical patent/JP2003243527A/ja
Priority claimed from JP2002038430A external-priority patent/JP2003243527A/ja
Priority to US10/347,806 priority patent/US6649458B2/en
Publication of JP2003243527A publication Critical patent/JP2003243527A/ja
Priority to US10/673,217 priority patent/US6989301B2/en
Priority to US10/673,374 priority patent/US6867079B2/en
Publication of JP2003243527A5 publication Critical patent/JP2003243527A5/ja
Priority to US11/266,259 priority patent/US7132320B2/en
Priority to US11/554,952 priority patent/US20070059853A1/en
Pending legal-status Critical Current

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JP2002038430A 2002-02-15 2002-02-15 半導体装置の製造方法 Pending JP2003243527A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002038430A JP2003243527A (ja) 2002-02-15 2002-02-15 半導体装置の製造方法
US10/347,806 US6649458B2 (en) 2002-02-15 2003-01-22 Method for manufacturing semiconductor device with hetero junction bipolar transistor
US10/673,217 US6989301B2 (en) 2002-02-15 2003-09-30 Method for manufacturing semiconductor device
US10/673,374 US6867079B2 (en) 2002-02-15 2003-09-30 Method for manufacturing semiconductor device
US11/266,259 US7132320B2 (en) 2002-02-15 2005-11-04 Method for manufacturing semiconductor device
US11/554,952 US20070059853A1 (en) 2002-02-15 2006-10-31 Method for Manufacturing Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002038430A JP2003243527A (ja) 2002-02-15 2002-02-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2003243527A JP2003243527A (ja) 2003-08-29
JP2003243527A5 true JP2003243527A5 (enExample) 2005-09-15

Family

ID=27678172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002038430A Pending JP2003243527A (ja) 2002-02-15 2002-02-15 半導体装置の製造方法

Country Status (2)

Country Link
US (5) US6649458B2 (enExample)
JP (1) JP2003243527A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243527A (ja) * 2002-02-15 2003-08-29 Hitachi Ltd 半導体装置の製造方法
JP4635416B2 (ja) * 2003-07-23 2011-02-23 住友電気工業株式会社 半導体素子の製造方法
JP4933024B2 (ja) * 2003-11-26 2012-05-16 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US20060009038A1 (en) * 2004-07-12 2006-01-12 International Business Machines Corporation Processing for overcoming extreme topography
US20060151868A1 (en) * 2005-01-10 2006-07-13 Zhu Tinggang Package for gallium nitride semiconductor devices
JP2008243954A (ja) * 2007-03-26 2008-10-09 Sumitomo Electric Ind Ltd 面発光型半導体光デバイス
EP2180517A1 (en) * 2008-10-24 2010-04-28 Epcos Ag Pnp bipolar transistor with lateral collector and method of production
US8651159B2 (en) * 2009-06-12 2014-02-18 Asm Assembly Automation Ltd Die bonder providing a large bonding force
TWI485836B (zh) * 2010-05-25 2015-05-21 Richwave Technology Corp 化合物半導體裝置及其製造方法
US9847407B2 (en) * 2011-11-16 2017-12-19 Skyworks Solutions, Inc. Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage
US20130137199A1 (en) 2011-11-16 2013-05-30 Skyworks Solutions, Inc. Systems and methods for monitoring heterojunction bipolar transistor processes
US9059196B2 (en) * 2013-11-04 2015-06-16 International Business Machines Corporation Bipolar junction transistors with self-aligned terminals
CN105655335A (zh) * 2016-03-11 2016-06-08 成都海威华芯科技有限公司 GaAs微电子集成器件
TWI679747B (zh) * 2017-02-28 2019-12-11 穩懋半導體股份有限公司 聲波元件與變容二極體整合結構暨聲波元件、變容二極體與功率放大器整合結構及其製造方法
JP2019033180A (ja) * 2017-08-08 2019-02-28 株式会社村田製作所 半導体装置
CN113066723B (zh) * 2021-03-19 2022-06-07 厦门市三安集成电路有限公司 异质结双极型晶体管及其制作方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198372A (en) * 1986-01-30 1993-03-30 Texas Instruments Incorporated Method for making a shallow junction bipolar transistor and transistor formed thereby
US5097312A (en) * 1989-02-16 1992-03-17 Texas Instruments Incorporated Heterojunction bipolar transistor and integration of same with field effect device
US5457062A (en) * 1989-06-30 1995-10-10 Texas Instruments Incorporated Method for forming gigaohm load for BiCMOS process
US5077231A (en) * 1991-03-15 1991-12-31 Texas Instruments Incorporated Method to integrate HBTs and FETs
US5166083A (en) * 1991-03-28 1992-11-24 Texas Instruments Incorporated Method of integrating heterojunction bipolar transistors with heterojunction FETs and PIN diodes
US5268315A (en) * 1992-09-04 1993-12-07 Tektronix, Inc. Implant-free heterojunction bioplar transistor integrated circuit process
US5485025A (en) * 1994-12-02 1996-01-16 Texas Instruments Incorporated Depleted extrinsic emitter of collector-up heterojunction bipolar transistor
US5672522A (en) * 1996-03-05 1997-09-30 Trw Inc. Method for making selective subcollector heterojunction bipolar transistors
US6294018B1 (en) * 1999-09-15 2001-09-25 Lucent Technologies Alignment techniques for epitaxial growth processes
JP3341740B2 (ja) * 1999-11-15 2002-11-05 日本電気株式会社 ヘテロバイポーラ型トランジスタ及びその製造方法
JP3686327B2 (ja) 1999-11-19 2005-08-24 松下電器産業株式会社 バイアス回路
JP2003531788A (ja) * 2000-04-28 2003-10-28 シーメンス、イレクトロゥカム、エル、ピー 選択前進インテリジェント・シンギュレータ
JP4895421B2 (ja) * 2000-12-04 2012-03-14 ルネサスエレクトロニクス株式会社 ヘテロ接合型バイポーラトランジスタの製造方法
JP2003243527A (ja) * 2002-02-15 2003-08-29 Hitachi Ltd 半導体装置の製造方法

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