JP2003243527A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JP2003243527A
JP2003243527A JP2002038430A JP2002038430A JP2003243527A JP 2003243527 A JP2003243527 A JP 2003243527A JP 2002038430 A JP2002038430 A JP 2002038430A JP 2002038430 A JP2002038430 A JP 2002038430A JP 2003243527 A JP2003243527 A JP 2003243527A
Authority
JP
Japan
Prior art keywords
layer
etching
collector
emitter
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002038430A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003243527A5 (enExample
Inventor
Atsushi Kurokawa
敦 黒川
Toshiaki Kitahara
敏昭 北原
Hiromi Inagawa
浩巳 稲川
Yoshinori Imamura
慶憲 今村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2002038430A priority Critical patent/JP2003243527A/ja
Priority to US10/347,806 priority patent/US6649458B2/en
Publication of JP2003243527A publication Critical patent/JP2003243527A/ja
Priority to US10/673,217 priority patent/US6989301B2/en
Priority to US10/673,374 priority patent/US6867079B2/en
Publication of JP2003243527A5 publication Critical patent/JP2003243527A5/ja
Priority to US11/266,259 priority patent/US7132320B2/en
Priority to US11/554,952 priority patent/US20070059853A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6738—Schottky barrier electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2002038430A 2002-02-15 2002-02-15 半導体装置の製造方法 Pending JP2003243527A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002038430A JP2003243527A (ja) 2002-02-15 2002-02-15 半導体装置の製造方法
US10/347,806 US6649458B2 (en) 2002-02-15 2003-01-22 Method for manufacturing semiconductor device with hetero junction bipolar transistor
US10/673,217 US6989301B2 (en) 2002-02-15 2003-09-30 Method for manufacturing semiconductor device
US10/673,374 US6867079B2 (en) 2002-02-15 2003-09-30 Method for manufacturing semiconductor device
US11/266,259 US7132320B2 (en) 2002-02-15 2005-11-04 Method for manufacturing semiconductor device
US11/554,952 US20070059853A1 (en) 2002-02-15 2006-10-31 Method for Manufacturing Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002038430A JP2003243527A (ja) 2002-02-15 2002-02-15 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2003243527A true JP2003243527A (ja) 2003-08-29
JP2003243527A5 JP2003243527A5 (enExample) 2005-09-15

Family

ID=27678172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002038430A Pending JP2003243527A (ja) 2002-02-15 2002-02-15 半導体装置の製造方法

Country Status (2)

Country Link
US (5) US6649458B2 (enExample)
JP (1) JP2003243527A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045064A (ja) * 2003-07-23 2005-02-17 Sumitomo Electric Ind Ltd 半導体素子及びその製造方法
JP2005159034A (ja) * 2003-11-26 2005-06-16 Nec Compound Semiconductor Devices Ltd 半導体装置及びその製造方法
JP2008243954A (ja) * 2007-03-26 2008-10-09 Sumitomo Electric Ind Ltd 面発光型半導体光デバイス

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003243527A (ja) * 2002-02-15 2003-08-29 Hitachi Ltd 半導体装置の製造方法
US20060009038A1 (en) * 2004-07-12 2006-01-12 International Business Machines Corporation Processing for overcoming extreme topography
US20060151868A1 (en) * 2005-01-10 2006-07-13 Zhu Tinggang Package for gallium nitride semiconductor devices
EP2180517A1 (en) * 2008-10-24 2010-04-28 Epcos Ag Pnp bipolar transistor with lateral collector and method of production
US8651159B2 (en) * 2009-06-12 2014-02-18 Asm Assembly Automation Ltd Die bonder providing a large bonding force
TWI485836B (zh) * 2010-05-25 2015-05-21 立積電子股份有限公司 化合物半導體裝置及其製造方法
US9847407B2 (en) * 2011-11-16 2017-12-19 Skyworks Solutions, Inc. Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage
US20130137199A1 (en) 2011-11-16 2013-05-30 Skyworks Solutions, Inc. Systems and methods for monitoring heterojunction bipolar transistor processes
US9059196B2 (en) * 2013-11-04 2015-06-16 International Business Machines Corporation Bipolar junction transistors with self-aligned terminals
CN105655335A (zh) * 2016-03-11 2016-06-08 成都海威华芯科技有限公司 GaAs微电子集成器件
TWI679747B (zh) * 2017-02-28 2019-12-11 穩懋半導體股份有限公司 聲波元件與變容二極體整合結構暨聲波元件、變容二極體與功率放大器整合結構及其製造方法
JP2019033180A (ja) * 2017-08-08 2019-02-28 株式会社村田製作所 半導体装置
CN113066723B (zh) * 2021-03-19 2022-06-07 厦门市三安集成电路有限公司 异质结双极型晶体管及其制作方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198372A (en) * 1986-01-30 1993-03-30 Texas Instruments Incorporated Method for making a shallow junction bipolar transistor and transistor formed thereby
US5097312A (en) * 1989-02-16 1992-03-17 Texas Instruments Incorporated Heterojunction bipolar transistor and integration of same with field effect device
US5457062A (en) * 1989-06-30 1995-10-10 Texas Instruments Incorporated Method for forming gigaohm load for BiCMOS process
US5077231A (en) * 1991-03-15 1991-12-31 Texas Instruments Incorporated Method to integrate HBTs and FETs
US5166083A (en) * 1991-03-28 1992-11-24 Texas Instruments Incorporated Method of integrating heterojunction bipolar transistors with heterojunction FETs and PIN diodes
US5268315A (en) * 1992-09-04 1993-12-07 Tektronix, Inc. Implant-free heterojunction bioplar transistor integrated circuit process
US5485025A (en) * 1994-12-02 1996-01-16 Texas Instruments Incorporated Depleted extrinsic emitter of collector-up heterojunction bipolar transistor
US5672522A (en) * 1996-03-05 1997-09-30 Trw Inc. Method for making selective subcollector heterojunction bipolar transistors
US6294018B1 (en) * 1999-09-15 2001-09-25 Lucent Technologies Alignment techniques for epitaxial growth processes
JP3341740B2 (ja) * 1999-11-15 2002-11-05 日本電気株式会社 ヘテロバイポーラ型トランジスタ及びその製造方法
JP3686327B2 (ja) 1999-11-19 2005-08-24 松下電器産業株式会社 バイアス回路
EP1280719B1 (en) * 2000-04-28 2007-07-18 Siemens Aktiengesellschaft Selective advance intelligent singulator
JP4895421B2 (ja) * 2000-12-04 2012-03-14 ルネサスエレクトロニクス株式会社 ヘテロ接合型バイポーラトランジスタの製造方法
JP2003243527A (ja) * 2002-02-15 2003-08-29 Hitachi Ltd 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045064A (ja) * 2003-07-23 2005-02-17 Sumitomo Electric Ind Ltd 半導体素子及びその製造方法
JP2005159034A (ja) * 2003-11-26 2005-06-16 Nec Compound Semiconductor Devices Ltd 半導体装置及びその製造方法
JP2008243954A (ja) * 2007-03-26 2008-10-09 Sumitomo Electric Ind Ltd 面発光型半導体光デバイス

Also Published As

Publication number Publication date
US20060057789A1 (en) 2006-03-16
US20030157775A1 (en) 2003-08-21
US6649458B2 (en) 2003-11-18
US20040063259A1 (en) 2004-04-01
US6989301B2 (en) 2006-01-24
US6867079B2 (en) 2005-03-15
US20070059853A1 (en) 2007-03-15
US20040063292A1 (en) 2004-04-01
US7132320B2 (en) 2006-11-07

Similar Documents

Publication Publication Date Title
CN114823883B (zh) 双极晶体管以及高频功率放大器模块
US20070134820A1 (en) Semiconductor device and manufacturing method of the same
US6649458B2 (en) Method for manufacturing semiconductor device with hetero junction bipolar transistor
US20010042867A1 (en) Monolithic compound semiconductor integrated circuit and method of forming the same
JP2001127071A (ja) 半導体装置及びその製造方法
US20070257332A1 (en) Bipolar transistor and a method of manufacturing the same
EP1291923B1 (en) Heterojunction bipolar transistor and production process therefore
JP4895421B2 (ja) ヘテロ接合型バイポーラトランジスタの製造方法
US20060108665A1 (en) Semiconductor device, manufacturing method of the same, and electronic device
JP4781259B2 (ja) バイポーラトランジスタおよびその製造方法
US6476427B2 (en) Microwave monolithic integrated circuit and fabrication process thereof
JP2004241471A (ja) 化合物半導体装置とその製造方法、半導体装置及び高周波モジュール
JP2636811B2 (ja) バイポ−ラトランジスタ及びその製造方法
CN116705844A (zh) 半导体结构及其形成方法
JP4494739B2 (ja) バイポーラトランジスタ及びその製造方法
JP2000101067A (ja) 半導体装置および集積回路装置
JP2003303827A (ja) 半導体装置及びその製造方法
JP4159535B2 (ja) 半導体装置及びその製造方法
US12563758B2 (en) Transistor feedback capacitance reduction
JP5878739B2 (ja) バラクタダイオードおよび半導体集積回路
JP3221646B2 (ja) ヘテロ接合バイポーラトランジスタ
JP3349644B2 (ja) 化合物半導体装置、及びその製造方法
JPH104100A (ja) 電子部品
KR100396919B1 (ko) 반도체 집적소자 제조 방법
JP3321229B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050131

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050331

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060726

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080325

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080722