JP2001127071A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP2001127071A
JP2001127071A JP2000216848A JP2000216848A JP2001127071A JP 2001127071 A JP2001127071 A JP 2001127071A JP 2000216848 A JP2000216848 A JP 2000216848A JP 2000216848 A JP2000216848 A JP 2000216848A JP 2001127071 A JP2001127071 A JP 2001127071A
Authority
JP
Japan
Prior art keywords
base
layer
emitter
electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000216848A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001127071A5 (enExample
Inventor
Atsushi Kurokawa
敦 黒川
Masao Yamane
正雄 山根
Kazuhiro Mochizuki
和浩 望月
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000216848A priority Critical patent/JP2001127071A/ja
Priority to US09/639,754 priority patent/US6403991B1/en
Publication of JP2001127071A publication Critical patent/JP2001127071A/ja
Priority to US10/026,968 priority patent/US6573540B2/en
Priority to US10/026,613 priority patent/US6743691B2/en
Priority to US10/133,498 priority patent/US6639257B2/en
Publication of JP2001127071A5 publication Critical patent/JP2001127071A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP2000216848A 1999-08-19 2000-07-18 半導体装置及びその製造方法 Pending JP2001127071A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000216848A JP2001127071A (ja) 1999-08-19 2000-07-18 半導体装置及びその製造方法
US09/639,754 US6403991B1 (en) 1999-08-19 2000-08-15 Semiconductor device and method for fabricating the same
US10/026,968 US6573540B2 (en) 1999-08-19 2001-12-27 Semiconductor device and method for fabricating the same
US10/026,613 US6743691B2 (en) 1999-08-19 2001-12-27 Semiconductor device and method for fabricating the same
US10/133,498 US6639257B2 (en) 1999-08-19 2002-04-29 Hetero-junction bipolar transistor having a dummy electrode

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-232378 1999-08-19
JP23237899 1999-08-19
JP2000216848A JP2001127071A (ja) 1999-08-19 2000-07-18 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2001127071A true JP2001127071A (ja) 2001-05-11
JP2001127071A5 JP2001127071A5 (enExample) 2005-02-10

Family

ID=26530425

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000216848A Pending JP2001127071A (ja) 1999-08-19 2000-07-18 半導体装置及びその製造方法

Country Status (2)

Country Link
US (4) US6403991B1 (enExample)
JP (1) JP2001127071A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281760A (ja) * 2003-03-17 2004-10-07 Hitachi Ltd 半導体装置
JP2006019503A (ja) * 2004-07-01 2006-01-19 Sharp Corp 半導体装置
JP2006325096A (ja) * 2005-05-20 2006-11-30 Matsushita Electric Ind Co Ltd 高周波電力増幅器
US7323728B2 (en) 2004-11-30 2008-01-29 Kabushiki Kaisha Toshiba Semiconductor device
JP2014082518A (ja) * 2013-12-26 2014-05-08 Murata Mfg Co Ltd 半導体装置

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001127071A (ja) * 1999-08-19 2001-05-11 Hitachi Ltd 半導体装置及びその製造方法
JP4895421B2 (ja) * 2000-12-04 2012-03-14 ルネサスエレクトロニクス株式会社 ヘテロ接合型バイポーラトランジスタの製造方法
US6531722B2 (en) * 2001-02-26 2003-03-11 Sumitomo Electric Industries, Ltd. Bipolar transistor
GB0126895D0 (en) * 2001-11-08 2002-01-02 Denselight Semiconductors Pte Fabrication of a heterojunction bipolar transistor with intergrated mim capaci or
JP3942984B2 (ja) * 2002-08-06 2007-07-11 株式会社ナノテコ バイポーラトランジスタ、マルチフィンガーバイポーラトランジスタ、バイポーラトランジスタ製造用エピタキシャル基板、及びバイポーラトランジスタの製造方法
US20040099879A1 (en) * 2002-11-27 2004-05-27 Win Semiconductors Corp. Heterojunction bipolar transistor power transistor
US6946720B2 (en) * 2003-02-13 2005-09-20 Intersil Americas Inc. Bipolar transistor for an integrated circuit having variable value emitter ballast resistors
US7397087B2 (en) * 2004-08-06 2008-07-08 International Business Machines Corporation FEOL/MEOL metal resistor for high end CMOS
DE102005021450B4 (de) * 2005-05-10 2009-04-23 Atmel Germany Gmbh Integrierter Schaltkreis und Verfahren zur Herstellung eines integrierten Schaltkreises und dessen Verwendung
DE102007030129A1 (de) * 2007-06-29 2009-01-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente und optoelektronisches Bauelement
JP5595751B2 (ja) * 2009-03-11 2014-09-24 ルネサスエレクトロニクス株式会社 Ｅｓｄ保護素子
JP2013026540A (ja) * 2011-07-25 2013-02-04 Renesas Electronics Corp 半導体集積回路装置
US9679869B2 (en) 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
KR101680511B1 (ko) * 2012-06-14 2016-11-28 스카이워크스 솔루션즈, 인코포레이티드 계조를 갖는 쌍극성 트랜지스터 및 관련된 시스템, 장치, 및 방법을 포함하는 전력 증폭기 모듈
JP2021158641A (ja) * 2020-03-30 2021-10-07 株式会社村田製作所 電力増幅素子
JP2022036468A (ja) * 2020-08-24 2022-03-08 株式会社村田製作所 半導体装置
CN114639672B (zh) * 2022-02-28 2025-01-14 北海惠科半导体科技有限公司 偏置电阻内置晶体管的制作方法及偏置电阻内置晶体管

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886458A (en) * 1972-12-12 1975-05-27 Sony Corp Frequency converter circuit with integrated injection capacitor
US4762806A (en) * 1983-12-23 1988-08-09 Sharp Kabushiki Kaisha Process for producing a SiC semiconductor device
US4711701A (en) * 1986-09-16 1987-12-08 Texas Instruments Incorporated Self-aligned transistor method
US5098853A (en) * 1988-11-02 1992-03-24 Hughes Aircraft Company Self-aligned, planar heterojunction bipolar transistor and method of forming the same
JPH0395935A (ja) * 1989-09-07 1991-04-22 Matsushita Electric Ind Co Ltd バイポーラトランジスタおよびその製造方法
US5270223A (en) * 1991-06-28 1993-12-14 Texas Instruments Incorporated Multiple layer wide bandgap collector structure for bipolar transistors
US5162243A (en) * 1991-08-30 1992-11-10 Trw Inc. Method of producing high reliability heterojunction bipolar transistors
JPH05175216A (ja) * 1991-12-24 1993-07-13 Rohm Co Ltd ヘテロ接合バイポーラトランジスタおよびその製法
US5321279A (en) 1992-11-09 1994-06-14 Texas Instruments Incorporated Base ballasting
US5665614A (en) * 1995-06-06 1997-09-09 Hughes Electronics Method for making fully self-aligned submicron heterojunction bipolar transistor
US5672522A (en) * 1996-03-05 1997-09-30 Trw Inc. Method for making selective subcollector heterojunction bipolar transistors
SE519628C2 (sv) * 1997-03-04 2003-03-18 Ericsson Telefon Ab L M Tillverkningsförfarande för halvledarkomponent med deponering av selektivt utformat material,vilket är ogenomträngligt för dopjoner
US5859447A (en) * 1997-05-09 1999-01-12 Yang; Edward S. Heterojunction bipolar transistor having heterostructure ballasting emitter
JP2001127071A (ja) * 1999-08-19 2001-05-11 Hitachi Ltd 半導体装置及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281760A (ja) * 2003-03-17 2004-10-07 Hitachi Ltd 半導体装置
JP2006019503A (ja) * 2004-07-01 2006-01-19 Sharp Corp 半導体装置
US7323728B2 (en) 2004-11-30 2008-01-29 Kabushiki Kaisha Toshiba Semiconductor device
JP2006325096A (ja) * 2005-05-20 2006-11-30 Matsushita Electric Ind Co Ltd 高周波電力増幅器
JP2014082518A (ja) * 2013-12-26 2014-05-08 Murata Mfg Co Ltd 半導体装置

Also Published As

Publication number Publication date
US6403991B1 (en) 2002-06-11
US6743691B2 (en) 2004-06-01
US20020058375A1 (en) 2002-05-16
US6573540B2 (en) 2003-06-03
US6639257B2 (en) 2003-10-28
US20020117684A1 (en) 2002-08-29
US20020055221A1 (en) 2002-05-09

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