JP2001035199A5 - - Google Patents

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Publication number
JP2001035199A5
JP2001035199A5 JP1999211029A JP21102999A JP2001035199A5 JP 2001035199 A5 JP2001035199 A5 JP 2001035199A5 JP 1999211029 A JP1999211029 A JP 1999211029A JP 21102999 A JP21102999 A JP 21102999A JP 2001035199 A5 JP2001035199 A5 JP 2001035199A5
Authority
JP
Japan
Prior art keywords
node
tuning
reference potential
output
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999211029A
Other languages
English (en)
Japanese (ja)
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JP2001035199A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11211029A priority Critical patent/JP2001035199A/ja
Priority claimed from JP11211029A external-priority patent/JP2001035199A/ja
Priority to US09/489,474 priority patent/US6331962B1/en
Publication of JP2001035199A publication Critical patent/JP2001035199A/ja
Priority to US09/986,973 priority patent/US6515934B2/en
Publication of JP2001035199A5 publication Critical patent/JP2001035199A5/ja
Pending legal-status Critical Current

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JP11211029A 1999-07-26 1999-07-26 半導体装置 Pending JP2001035199A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11211029A JP2001035199A (ja) 1999-07-26 1999-07-26 半導体装置
US09/489,474 US6331962B1 (en) 1999-07-26 2000-01-21 Semiconductor device including voltage down converter allowing tuning in short period of time and reduction of chip area
US09/986,973 US6515934B2 (en) 1999-07-26 2001-11-13 Semiconductor device including internal potential generating circuit allowing tuning in short period of time and reduction of chip area

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11211029A JP2001035199A (ja) 1999-07-26 1999-07-26 半導体装置

Publications (2)

Publication Number Publication Date
JP2001035199A JP2001035199A (ja) 2001-02-09
JP2001035199A5 true JP2001035199A5 (enExample) 2006-06-22

Family

ID=16599191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11211029A Pending JP2001035199A (ja) 1999-07-26 1999-07-26 半導体装置

Country Status (2)

Country Link
US (1) US6331962B1 (enExample)
JP (1) JP2001035199A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515934B2 (en) * 1999-07-26 2003-02-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including internal potential generating circuit allowing tuning in short period of time and reduction of chip area
JP4776071B2 (ja) * 2000-12-18 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置
JP4790158B2 (ja) * 2001-06-11 2011-10-12 ルネサスエレクトロニクス株式会社 半導体装置
KR100426990B1 (ko) * 2001-06-27 2004-04-13 삼성전자주식회사 외부의 코드에 따라 프로그래머블하게 기준 전압을 발생시키는 기준 전압 발생 회로
KR100560767B1 (ko) 2003-09-02 2006-03-13 삼성전자주식회사 탈착 가능한 저장 장치를 포함하는 시스템 및 그것의 제어방법
US7098721B2 (en) * 2004-09-01 2006-08-29 International Business Machines Corporation Low voltage programmable eFuse with differential sensing scheme
US20060148421A1 (en) * 2005-01-04 2006-07-06 Via Technologies, Inc. Method and apparatus for frequency adjustment
JP2006209861A (ja) * 2005-01-27 2006-08-10 Matsushita Electric Ind Co Ltd 半導体集積回路およびそのテスト手法
KR100846392B1 (ko) * 2006-08-31 2008-07-15 주식회사 하이닉스반도체 반도체 메모리 장치
JP5137408B2 (ja) * 2007-02-05 2013-02-06 パナソニック株式会社 電気ヒューズ回路
KR101062775B1 (ko) 2009-12-28 2011-09-06 주식회사 하이닉스반도체 퓨즈 회로 및 그 제어 방법
JP6539086B2 (ja) * 2015-03-31 2019-07-03 キヤノン株式会社 記憶装置、制御装置、治工具、画像形成装置および定着装置
US10347350B2 (en) * 2017-05-19 2019-07-09 Skyworks Solutions, Inc. Dynamic fuse sensing and latch circuit

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05314769A (ja) * 1992-05-13 1993-11-26 Mitsubishi Electric Corp 半導体集積回路装置
JP3085782B2 (ja) * 1992-05-29 2000-09-11 株式会社東芝 半導体記憶装置
US5434498A (en) * 1992-12-14 1995-07-18 United Memories, Inc. Fuse programmable voltage converter with a secondary tuning path
JP2639328B2 (ja) 1993-11-12 1997-08-13 日本電気株式会社 トリミング方法及び回路
US5631862A (en) 1996-03-05 1997-05-20 Micron Technology, Inc. Self current limiting antifuse circuit
US5864225A (en) * 1997-06-04 1999-01-26 Fairchild Semiconductor Corporation Dual adjustable voltage regulators
US6087885A (en) * 1997-09-11 2000-07-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device allowing fast and stable transmission of signals
KR100270957B1 (ko) * 1998-06-08 2000-11-01 윤종용 반도체 메모리 장치의 내부 전원전압 변환회로
JP2000155620A (ja) * 1998-11-20 2000-06-06 Mitsubishi Electric Corp 基準電圧発生回路

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