JP2001035199A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2001035199A
JP2001035199A JP11211029A JP21102999A JP2001035199A JP 2001035199 A JP2001035199 A JP 2001035199A JP 11211029 A JP11211029 A JP 11211029A JP 21102999 A JP21102999 A JP 21102999A JP 2001035199 A JP2001035199 A JP 2001035199A
Authority
JP
Japan
Prior art keywords
circuit
tuning
signal
power supply
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11211029A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001035199A5 (enExample
Inventor
Masako Kobayashi
真子 小林
Gen Morishita
玄 森下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11211029A priority Critical patent/JP2001035199A/ja
Priority to US09/489,474 priority patent/US6331962B1/en
Publication of JP2001035199A publication Critical patent/JP2001035199A/ja
Priority to US09/986,973 priority patent/US6515934B2/en
Publication of JP2001035199A5 publication Critical patent/JP2001035199A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP11211029A 1999-07-26 1999-07-26 半導体装置 Pending JP2001035199A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP11211029A JP2001035199A (ja) 1999-07-26 1999-07-26 半導体装置
US09/489,474 US6331962B1 (en) 1999-07-26 2000-01-21 Semiconductor device including voltage down converter allowing tuning in short period of time and reduction of chip area
US09/986,973 US6515934B2 (en) 1999-07-26 2001-11-13 Semiconductor device including internal potential generating circuit allowing tuning in short period of time and reduction of chip area

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11211029A JP2001035199A (ja) 1999-07-26 1999-07-26 半導体装置

Publications (2)

Publication Number Publication Date
JP2001035199A true JP2001035199A (ja) 2001-02-09
JP2001035199A5 JP2001035199A5 (enExample) 2006-06-22

Family

ID=16599191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11211029A Pending JP2001035199A (ja) 1999-07-26 1999-07-26 半導体装置

Country Status (2)

Country Link
US (1) US6331962B1 (enExample)
JP (1) JP2001035199A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002368113A (ja) * 2001-06-11 2002-12-20 Mitsubishi Electric Corp 半導体装置
JP2008059734A (ja) * 2006-08-31 2008-03-13 Hynix Semiconductor Inc 半導体メモリ装置
US7617335B2 (en) 2003-09-02 2009-11-10 Samsung Electronics Co., Ltd. System having insertable and removable storage and a control method thereof
KR101062775B1 (ko) 2009-12-28 2011-09-06 주식회사 하이닉스반도체 퓨즈 회로 및 그 제어 방법
JP4833214B2 (ja) * 2004-09-01 2011-12-07 インターナショナル・ビジネス・マシーンズ・コーポレーション 差異感知技術による低電圧プログラマブルｅＦＵＳＥ
JP2016191898A (ja) * 2015-03-31 2016-11-10 キヤノン株式会社 記憶装置、制御装置、治工具、画像形成装置および定着装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515934B2 (en) * 1999-07-26 2003-02-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including internal potential generating circuit allowing tuning in short period of time and reduction of chip area
JP4776071B2 (ja) * 2000-12-18 2011-09-21 ルネサスエレクトロニクス株式会社 半導体装置
KR100426990B1 (ko) * 2001-06-27 2004-04-13 삼성전자주식회사 외부의 코드에 따라 프로그래머블하게 기준 전압을 발생시키는 기준 전압 발생 회로
US20060148421A1 (en) * 2005-01-04 2006-07-06 Via Technologies, Inc. Method and apparatus for frequency adjustment
JP2006209861A (ja) * 2005-01-27 2006-08-10 Matsushita Electric Ind Co Ltd 半導体集積回路およびそのテスト手法
JP5137408B2 (ja) * 2007-02-05 2013-02-06 パナソニック株式会社 電気ヒューズ回路
US10347350B2 (en) * 2017-05-19 2019-07-09 Skyworks Solutions, Inc. Dynamic fuse sensing and latch circuit

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05314769A (ja) * 1992-05-13 1993-11-26 Mitsubishi Electric Corp 半導体集積回路装置
JP3085782B2 (ja) * 1992-05-29 2000-09-11 株式会社東芝 半導体記憶装置
US5434498A (en) * 1992-12-14 1995-07-18 United Memories, Inc. Fuse programmable voltage converter with a secondary tuning path
JP2639328B2 (ja) 1993-11-12 1997-08-13 日本電気株式会社 トリミング方法及び回路
US5631862A (en) 1996-03-05 1997-05-20 Micron Technology, Inc. Self current limiting antifuse circuit
US5864225A (en) * 1997-06-04 1999-01-26 Fairchild Semiconductor Corporation Dual adjustable voltage regulators
US6087885A (en) * 1997-09-11 2000-07-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor device allowing fast and stable transmission of signals
KR100270957B1 (ko) * 1998-06-08 2000-11-01 윤종용 반도체 메모리 장치의 내부 전원전압 변환회로
JP2000155620A (ja) * 1998-11-20 2000-06-06 Mitsubishi Electric Corp 基準電圧発生回路

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002368113A (ja) * 2001-06-11 2002-12-20 Mitsubishi Electric Corp 半導体装置
US7617335B2 (en) 2003-09-02 2009-11-10 Samsung Electronics Co., Ltd. System having insertable and removable storage and a control method thereof
JP4833214B2 (ja) * 2004-09-01 2011-12-07 インターナショナル・ビジネス・マシーンズ・コーポレーション 差異感知技術による低電圧プログラマブルｅＦＵＳＥ
JP2008059734A (ja) * 2006-08-31 2008-03-13 Hynix Semiconductor Inc 半導体メモリ装置
KR101062775B1 (ko) 2009-12-28 2011-09-06 주식회사 하이닉스반도체 퓨즈 회로 및 그 제어 방법
US8358555B2 (en) 2009-12-28 2013-01-22 SK Hynix Inc. Fuse circuit and control method thereof
JP2016191898A (ja) * 2015-03-31 2016-11-10 キヤノン株式会社 記憶装置、制御装置、治工具、画像形成装置および定着装置

Also Published As

Publication number Publication date
US6331962B1 (en) 2001-12-18
US20020000582A1 (en) 2002-01-03

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