JP2000156406A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JP2000156406A
JP2000156406A JP10329216A JP32921698A JP2000156406A JP 2000156406 A JP2000156406 A JP 2000156406A JP 10329216 A JP10329216 A JP 10329216A JP 32921698 A JP32921698 A JP 32921698A JP 2000156406 A JP2000156406 A JP 2000156406A
Authority
JP
Japan
Prior art keywords
film
connection hole
barrier layer
semiconductor device
wiring groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10329216A
Other languages
English (en)
Japanese (ja)
Inventor
Hirobumi Sumi
博文 角
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP10329216A priority Critical patent/JP2000156406A/ja
Priority to KR1019990051222A priority patent/KR20000035543A/ko
Priority to TW088120172A priority patent/TW429540B/zh
Publication of JP2000156406A publication Critical patent/JP2000156406A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP10329216A 1998-11-19 1998-11-19 半導体装置およびその製造方法 Pending JP2000156406A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10329216A JP2000156406A (ja) 1998-11-19 1998-11-19 半導体装置およびその製造方法
KR1019990051222A KR20000035543A (ko) 1998-11-19 1999-11-18 반도체 장치 및 그 제조 방법
TW088120172A TW429540B (en) 1998-11-19 1999-11-18 Semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10329216A JP2000156406A (ja) 1998-11-19 1998-11-19 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
JP2000156406A true JP2000156406A (ja) 2000-06-06

Family

ID=18218959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10329216A Pending JP2000156406A (ja) 1998-11-19 1998-11-19 半導体装置およびその製造方法

Country Status (3)

Country Link
JP (1) JP2000156406A (ko)
KR (1) KR20000035543A (ko)
TW (1) TW429540B (ko)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030064257A (ko) * 2002-01-24 2003-07-31 미쓰비시덴키 가부시키가이샤 반도체 장치
KR100430949B1 (ko) * 2001-10-22 2004-05-12 엘지.필립스 엘시디 주식회사 무전해 은 도금액 및 이를 이용한 금속 배선 형성방법
KR100701675B1 (ko) * 2001-12-28 2007-03-29 매그나칩 반도체 유한회사 반도체 소자의 구리배선 형성방법
KR100727214B1 (ko) * 2004-12-15 2007-06-13 주식회사 엘지화학 팔라듐-은 활성화 방법을 이용한 은 전해도금방법
JP2008199059A (ja) * 2008-05-01 2008-08-28 Sony Corp 固体撮像素子及びその製造方法
JP2015034306A (ja) * 2013-08-07 2015-02-19 大日本印刷株式会社 金属充填構造体の製造方法及び金属充填構造体

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100528530B1 (ko) * 2000-12-20 2005-11-15 매그나칩 반도체 유한회사 반도체 디바이스의 배선 형성 방법
KR100820780B1 (ko) * 2002-06-29 2008-04-10 주식회사 하이닉스반도체 반도체소자의 구리 배선 제조 방법
KR100690881B1 (ko) 2005-02-05 2007-03-09 삼성전자주식회사 미세 전자 소자의 듀얼 다마신 배선의 제조 방법 및 이에의해 제조된 듀얼 다마신 배선을 구비하는 미세 전자 소자
KR100791074B1 (ko) * 2006-08-23 2008-01-02 삼성전자주식회사 귀금속을 함유하는 장벽막을 갖는 콘택 구조체, 이를채택하는 강유전체 메모리 소자 및 그 제조방법들
KR100862826B1 (ko) * 2007-04-27 2008-10-13 동부일렉트로닉스 주식회사 반도체 소자의 구리배선 형성방법
KR102264160B1 (ko) * 2014-12-03 2021-06-11 삼성전자주식회사 비아 구조체 및 배선 구조체를 갖는 반도체 소자 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0168120B1 (ko) * 1994-12-30 1999-02-01 김주용 반도체 소자의 텅스텐-플러그 형성방법
KR970052537A (ko) * 1995-12-27 1997-07-29 김광호 반도체장치의 제조방법
KR100227622B1 (ko) * 1996-12-28 1999-11-01 김영환 반도체 소자의 비트 라인 형성 방법
KR100227843B1 (ko) * 1997-01-22 1999-11-01 윤종용 반도체 소자의 콘택 배선 방법 및 이를 이용한 커패시터 제조방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100430949B1 (ko) * 2001-10-22 2004-05-12 엘지.필립스 엘시디 주식회사 무전해 은 도금액 및 이를 이용한 금속 배선 형성방법
KR100701675B1 (ko) * 2001-12-28 2007-03-29 매그나칩 반도체 유한회사 반도체 소자의 구리배선 형성방법
KR20030064257A (ko) * 2002-01-24 2003-07-31 미쓰비시덴키 가부시키가이샤 반도체 장치
KR100727214B1 (ko) * 2004-12-15 2007-06-13 주식회사 엘지화학 팔라듐-은 활성화 방법을 이용한 은 전해도금방법
JP2008199059A (ja) * 2008-05-01 2008-08-28 Sony Corp 固体撮像素子及びその製造方法
JP2015034306A (ja) * 2013-08-07 2015-02-19 大日本印刷株式会社 金属充填構造体の製造方法及び金属充填構造体

Also Published As

Publication number Publication date
TW429540B (en) 2001-04-11
KR20000035543A (ko) 2000-06-26

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