JP2000156406A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法Info
- Publication number
- JP2000156406A JP2000156406A JP10329216A JP32921698A JP2000156406A JP 2000156406 A JP2000156406 A JP 2000156406A JP 10329216 A JP10329216 A JP 10329216A JP 32921698 A JP32921698 A JP 32921698A JP 2000156406 A JP2000156406 A JP 2000156406A
- Authority
- JP
- Japan
- Prior art keywords
- film
- connection hole
- barrier layer
- semiconductor device
- wiring groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10329216A JP2000156406A (ja) | 1998-11-19 | 1998-11-19 | 半導体装置およびその製造方法 |
TW088120172A TW429540B (en) | 1998-11-19 | 1999-11-18 | Semiconductor device and its manufacturing method |
KR1019990051222A KR20000035543A (ko) | 1998-11-19 | 1999-11-18 | 반도체 장치 및 그 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10329216A JP2000156406A (ja) | 1998-11-19 | 1998-11-19 | 半導体装置およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2000156406A true JP2000156406A (ja) | 2000-06-06 |
Family
ID=18218959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10329216A Pending JP2000156406A (ja) | 1998-11-19 | 1998-11-19 | 半導体装置およびその製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2000156406A (ko) |
KR (1) | KR20000035543A (ko) |
TW (1) | TW429540B (ko) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030064257A (ko) * | 2002-01-24 | 2003-07-31 | 미쓰비시덴키 가부시키가이샤 | 반도체 장치 |
KR100430949B1 (ko) * | 2001-10-22 | 2004-05-12 | 엘지.필립스 엘시디 주식회사 | 무전해 은 도금액 및 이를 이용한 금속 배선 형성방법 |
KR100701675B1 (ko) * | 2001-12-28 | 2007-03-29 | 매그나칩 반도체 유한회사 | 반도체 소자의 구리배선 형성방법 |
KR100727214B1 (ko) * | 2004-12-15 | 2007-06-13 | 주식회사 엘지화학 | 팔라듐-은 활성화 방법을 이용한 은 전해도금방법 |
JP2008199059A (ja) * | 2008-05-01 | 2008-08-28 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2015034306A (ja) * | 2013-08-07 | 2015-02-19 | 大日本印刷株式会社 | 金属充填構造体の製造方法及び金属充填構造体 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100528530B1 (ko) * | 2000-12-20 | 2005-11-15 | 매그나칩 반도체 유한회사 | 반도체 디바이스의 배선 형성 방법 |
KR100820780B1 (ko) * | 2002-06-29 | 2008-04-10 | 주식회사 하이닉스반도체 | 반도체소자의 구리 배선 제조 방법 |
KR100690881B1 (ko) | 2005-02-05 | 2007-03-09 | 삼성전자주식회사 | 미세 전자 소자의 듀얼 다마신 배선의 제조 방법 및 이에의해 제조된 듀얼 다마신 배선을 구비하는 미세 전자 소자 |
KR100791074B1 (ko) * | 2006-08-23 | 2008-01-02 | 삼성전자주식회사 | 귀금속을 함유하는 장벽막을 갖는 콘택 구조체, 이를채택하는 강유전체 메모리 소자 및 그 제조방법들 |
KR100862826B1 (ko) * | 2007-04-27 | 2008-10-13 | 동부일렉트로닉스 주식회사 | 반도체 소자의 구리배선 형성방법 |
KR102264160B1 (ko) * | 2014-12-03 | 2021-06-11 | 삼성전자주식회사 | 비아 구조체 및 배선 구조체를 갖는 반도체 소자 제조 방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0168120B1 (ko) * | 1994-12-30 | 1999-02-01 | 김주용 | 반도체 소자의 텅스텐-플러그 형성방법 |
KR970052537A (ko) * | 1995-12-27 | 1997-07-29 | 김광호 | 반도체장치의 제조방법 |
KR100227622B1 (ko) * | 1996-12-28 | 1999-11-01 | 김영환 | 반도체 소자의 비트 라인 형성 방법 |
KR100227843B1 (ko) * | 1997-01-22 | 1999-11-01 | 윤종용 | 반도체 소자의 콘택 배선 방법 및 이를 이용한 커패시터 제조방법 |
-
1998
- 1998-11-19 JP JP10329216A patent/JP2000156406A/ja active Pending
-
1999
- 1999-11-18 KR KR1019990051222A patent/KR20000035543A/ko not_active Application Discontinuation
- 1999-11-18 TW TW088120172A patent/TW429540B/zh not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100430949B1 (ko) * | 2001-10-22 | 2004-05-12 | 엘지.필립스 엘시디 주식회사 | 무전해 은 도금액 및 이를 이용한 금속 배선 형성방법 |
KR100701675B1 (ko) * | 2001-12-28 | 2007-03-29 | 매그나칩 반도체 유한회사 | 반도체 소자의 구리배선 형성방법 |
KR20030064257A (ko) * | 2002-01-24 | 2003-07-31 | 미쓰비시덴키 가부시키가이샤 | 반도체 장치 |
KR100727214B1 (ko) * | 2004-12-15 | 2007-06-13 | 주식회사 엘지화학 | 팔라듐-은 활성화 방법을 이용한 은 전해도금방법 |
JP2008199059A (ja) * | 2008-05-01 | 2008-08-28 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2015034306A (ja) * | 2013-08-07 | 2015-02-19 | 大日本印刷株式会社 | 金属充填構造体の製造方法及び金属充填構造体 |
Also Published As
Publication number | Publication date |
---|---|
TW429540B (en) | 2001-04-11 |
KR20000035543A (ko) | 2000-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6358832B1 (en) | Method of forming barrier layers for damascene interconnects | |
US6958547B2 (en) | Interconnect structures containing conductive electrolessly deposited etch stop layers, liner layers, and via plugs | |
TWI406361B (zh) | 於互連應用中形成可靠介層接觸之結構及方法 | |
US6972254B1 (en) | Manufacturing a conformal atomic liner layer in an integrated circuit interconnect | |
TWI290736B (en) | Semiconductor device and method for production thereof | |
US20050230263A1 (en) | Methods for forming interconnect structures by co-plating of noble metals and structures formed thereby | |
US7319071B2 (en) | Methods for forming a metallic damascene structure | |
US20080128907A1 (en) | Semiconductor structure with liner | |
US20010011638A1 (en) | Method of forming a metal seed layer for subsequent plating | |
JP2003017496A (ja) | 半導体装置及びその製造方法 | |
JP5255198B2 (ja) | 導体−誘電体相互接続構造を製造するための方法 | |
JP2007109894A (ja) | 半導体装置及びその製造方法 | |
US6303498B1 (en) | Method for preventing seed layer oxidation for high aspect gap fill | |
JP2009026989A (ja) | 半導体装置及び半導体装置の製造方法 | |
US7867897B2 (en) | Low leakage metal-containing cap process using oxidation | |
JP2000156406A (ja) | 半導体装置およびその製造方法 | |
KR0185230B1 (ko) | 금속배선 및 반도체장치 | |
KR20100011799A (ko) | 반도체 소자의 제조방법 | |
JP2000164707A (ja) | 半導体装置およびその製造方法 | |
JP2000294518A (ja) | 半導体装置の製造方法 | |
JPH11340226A (ja) | 半導体装置の製造方法 | |
KR100421913B1 (ko) | 반도체 소자의 금속 배선 형성방법 | |
JP2003218201A (ja) | 半導体装置およびその製造方法 | |
JP2003243392A (ja) | 半導体装置及びその製造方法 | |
KR100720402B1 (ko) | 듀얼 다마센 공정을 이용한 금속 배선 형성 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20041222 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20050111 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050802 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070830 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080401 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20080722 |