JP2000114535A - 薄膜トランジスタの製造方法、および半導体膜形成装置 - Google Patents
薄膜トランジスタの製造方法、および半導体膜形成装置Info
- Publication number
- JP2000114535A JP2000114535A JP10283008A JP28300898A JP2000114535A JP 2000114535 A JP2000114535 A JP 2000114535A JP 10283008 A JP10283008 A JP 10283008A JP 28300898 A JP28300898 A JP 28300898A JP 2000114535 A JP2000114535 A JP 2000114535A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- substrate
- film
- laser annealing
- amorphous semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 209
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000010408 film Substances 0.000 title claims description 452
- 239000010409 thin film Substances 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 211
- 238000005224 laser annealing Methods 0.000 claims abstract description 122
- 230000001590 oxidative effect Effects 0.000 claims abstract description 25
- 238000000137 annealing Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 63
- 238000005530 etching Methods 0.000 claims description 42
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- 239000007789 gas Substances 0.000 claims description 13
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- 230000001678 irradiating effect Effects 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- 238000012546 transfer Methods 0.000 abstract description 11
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- 239000011229 interlayer Substances 0.000 description 25
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 230000032258 transport Effects 0.000 description 16
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 8
- -1 phosphorus ions Chemical class 0.000 description 8
- 239000003566 sealing material Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
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- 238000005229 chemical vapour deposition Methods 0.000 description 4
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- 238000012545 processing Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
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- 229920000297 Rayon Polymers 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
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- 239000008096 xylene Substances 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- CQMUOFGWJSNFPX-UHFFFAOYSA-N [O].[Sn].[Sn] Chemical compound [O].[Sn].[Sn] CQMUOFGWJSNFPX-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
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- 229910021529 ammonia Inorganic materials 0.000 description 1
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- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
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- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
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- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10283008A JP2000114535A (ja) | 1998-10-05 | 1998-10-05 | 薄膜トランジスタの製造方法、および半導体膜形成装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10283008A JP2000114535A (ja) | 1998-10-05 | 1998-10-05 | 薄膜トランジスタの製造方法、および半導体膜形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000114535A true JP2000114535A (ja) | 2000-04-21 |
| JP2000114535A5 JP2000114535A5 (enrdf_load_stackoverflow) | 2004-08-05 |
Family
ID=17660041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10283008A Pending JP2000114535A (ja) | 1998-10-05 | 1998-10-05 | 薄膜トランジスタの製造方法、および半導体膜形成装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000114535A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001326174A (ja) * | 2000-05-12 | 2001-11-22 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2004152920A (ja) * | 2002-10-30 | 2004-05-27 | Fujitsu Ltd | 半導体装置の製造方法及び半導体製造工程の管理方法 |
| JP2016225626A (ja) * | 2015-05-29 | 2016-12-28 | エイピー系▲統▼股▲フン▼有限公司Ａｐ Ｓｙｓｔｅｍｓ Ｉｎｃ． | 紫外線光源を用いたレーザー結晶化設備に起因するムラを定量化するシステム及び紫外線光源を用いたレーザー結晶化設備に起因するムラを定量化する方法 |
-
1998
- 1998-10-05 JP JP10283008A patent/JP2000114535A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001326174A (ja) * | 2000-05-12 | 2001-11-22 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2004152920A (ja) * | 2002-10-30 | 2004-05-27 | Fujitsu Ltd | 半導体装置の製造方法及び半導体製造工程の管理方法 |
| JP2016225626A (ja) * | 2015-05-29 | 2016-12-28 | エイピー系▲統▼股▲フン▼有限公司Ａｐ Ｓｙｓｔｅｍｓ Ｉｎｃ． | 紫外線光源を用いたレーザー結晶化設備に起因するムラを定量化するシステム及び紫外線光源を用いたレーザー結晶化設備に起因するムラを定量化する方法 |
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