JP2000114535A5 - - Google Patents
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- Publication number
- JP2000114535A5 JP2000114535A5 JP1998283008A JP28300898A JP2000114535A5 JP 2000114535 A5 JP2000114535 A5 JP 2000114535A5 JP 1998283008 A JP1998283008 A JP 1998283008A JP 28300898 A JP28300898 A JP 28300898A JP 2000114535 A5 JP2000114535 A5 JP 2000114535A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- substrate
- film
- amorphous semiconductor
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims description 50
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005224 laser annealing Methods 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims 10
- 238000000137 annealing Methods 0.000 claims 3
- 238000001039 wet etching Methods 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10283008A JP2000114535A (ja) | 1998-10-05 | 1998-10-05 | 薄膜トランジスタの製造方法、および半導体膜形成装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10283008A JP2000114535A (ja) | 1998-10-05 | 1998-10-05 | 薄膜トランジスタの製造方法、および半導体膜形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000114535A JP2000114535A (ja) | 2000-04-21 |
| JP2000114535A5 true JP2000114535A5 (enrdf_load_stackoverflow) | 2004-08-05 |
Family
ID=17660041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10283008A Pending JP2000114535A (ja) | 1998-10-05 | 1998-10-05 | 薄膜トランジスタの製造方法、および半導体膜形成装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000114535A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4588167B2 (ja) * | 2000-05-12 | 2010-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2004152920A (ja) * | 2002-10-30 | 2004-05-27 | Fujitsu Ltd | 半導体装置の製造方法及び半導体製造工程の管理方法 |
| KR101877274B1 (ko) * | 2015-05-29 | 2018-07-12 | 에이피시스템 주식회사 | 자외선 광원을 이용한 레이저 결정화 설비에 기인하는 무라 정량화 시스템 및 자외선 광원을 이용한 레이저 결정화 설비에 기인하는 무라 정량화 방법 |
-
1998
- 1998-10-05 JP JP10283008A patent/JP2000114535A/ja active Pending
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