JP2000058920A5 - - Google Patents

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Publication number
JP2000058920A5
JP2000058920A5 JP1999214602A JP21460299A JP2000058920A5 JP 2000058920 A5 JP2000058920 A5 JP 2000058920A5 JP 1999214602 A JP1999214602 A JP 1999214602A JP 21460299 A JP21460299 A JP 21460299A JP 2000058920 A5 JP2000058920 A5 JP 2000058920A5
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JP
Japan
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layer
ingan
thick
ingan layer
forming
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JP1999214602A
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Japanese (ja)
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JP2000058920A (ja
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Priority claimed from US09/127,038 external-priority patent/US6233265B1/en
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Publication of JP2000058920A publication Critical patent/JP2000058920A/ja
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JP21460299A 1998-07-31 1999-07-29 半導体およびその製造方法 Pending JP2000058920A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/127,038 US6233265B1 (en) 1998-07-31 1998-07-31 AlGaInN LED and laser diode structures for pure blue or green emission
US09/127,038 1998-07-31

Related Child Applications (1)

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JP2010292773A Division JP2011082563A (ja) 1998-07-31 2010-12-28 半導体およびその製造方法

Publications (2)

Publication Number Publication Date
JP2000058920A JP2000058920A (ja) 2000-02-25
JP2000058920A5 true JP2000058920A5 (https=) 2006-09-14

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JP21460299A Pending JP2000058920A (ja) 1998-07-31 1999-07-29 半導体およびその製造方法
JP2010292773A Pending JP2011082563A (ja) 1998-07-31 2010-12-28 半導体およびその製造方法

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JP2010292773A Pending JP2011082563A (ja) 1998-07-31 2010-12-28 半導体およびその製造方法

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US (3) US6233265B1 (https=)
EP (1) EP0977279A3 (https=)
JP (2) JP2000058920A (https=)

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