JP2000036190A5 - - Google Patents

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Publication number
JP2000036190A5
JP2000036190A5 JP1998203456A JP20345698A JP2000036190A5 JP 2000036190 A5 JP2000036190 A5 JP 2000036190A5 JP 1998203456 A JP1998203456 A JP 1998203456A JP 20345698 A JP20345698 A JP 20345698A JP 2000036190 A5 JP2000036190 A5 JP 2000036190A5
Authority
JP
Japan
Prior art keywords
power supply
precharge
circuit
precharge power
supply line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998203456A
Other languages
English (en)
Japanese (ja)
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JP2000036190A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10203456A priority Critical patent/JP2000036190A/ja
Priority claimed from JP10203456A external-priority patent/JP2000036190A/ja
Priority to US09/353,856 priority patent/US6081468A/en
Priority to TW088112110A priority patent/TW436787B/zh
Publication of JP2000036190A publication Critical patent/JP2000036190A/ja
Publication of JP2000036190A5 publication Critical patent/JP2000036190A5/ja
Pending legal-status Critical Current

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JP10203456A 1998-07-17 1998-07-17 半導体装置 Pending JP2000036190A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10203456A JP2000036190A (ja) 1998-07-17 1998-07-17 半導体装置
US09/353,856 US6081468A (en) 1998-07-17 1999-07-15 Semiconductor device
TW088112110A TW436787B (en) 1998-07-17 1999-07-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10203456A JP2000036190A (ja) 1998-07-17 1998-07-17 半導体装置

Publications (2)

Publication Number Publication Date
JP2000036190A JP2000036190A (ja) 2000-02-02
JP2000036190A5 true JP2000036190A5 (enExample) 2005-04-28

Family

ID=16474434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10203456A Pending JP2000036190A (ja) 1998-07-17 1998-07-17 半導体装置

Country Status (3)

Country Link
US (1) US6081468A (enExample)
JP (1) JP2000036190A (enExample)
TW (1) TW436787B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195262A (ja) * 1998-12-25 2000-07-14 Internatl Business Mach Corp <Ibm> Ｓｄｒａｍ及びｓｄｒａｍのデ―タ・アクセス方法
KR100381968B1 (ko) * 1998-12-30 2004-03-24 주식회사 하이닉스반도체 고속동작용디램
KR100326085B1 (ko) * 2000-02-24 2002-03-07 윤종용 반도체 메모리 장치의 자동 프리차지 제어신호 발생회로및 자동 프리차지 제어방법
US6532185B2 (en) 2001-02-23 2003-03-11 International Business Machines Corporation Distribution of bank accesses in a multiple bank DRAM used as a data buffer
US6590822B2 (en) * 2001-05-07 2003-07-08 Samsung Electronics Co., Ltd. System and method for performing partial array self-refresh operation in a semiconductor memory device
JP3753972B2 (ja) * 2001-11-20 2006-03-08 松下電器産業株式会社 半導体記憶装置
US6728159B2 (en) * 2001-12-21 2004-04-27 International Business Machines Corporation Flexible multibanking interface for embedded memory applications
KR100605606B1 (ko) * 2003-05-29 2006-07-28 주식회사 하이닉스반도체 반도체 메모리 장치의 동기식 셀프 리프레쉬 제어 방법 및제어 회로
JP2007265552A (ja) * 2006-03-29 2007-10-11 Matsushita Electric Ind Co Ltd 半導体記憶装置
KR100825022B1 (ko) * 2006-08-31 2008-04-24 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 구동방법
US7986577B2 (en) * 2007-03-19 2011-07-26 Hynix Semiconductor Inc. Precharge voltage supplying circuit
ITMI20082344A1 (it) * 2008-12-30 2010-06-30 St Microelectronics Srl Metodo per indicizzare piastrine comprendenti circuiti integrati
WO2012153697A1 (en) * 2011-05-06 2012-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6353668B2 (ja) * 2014-03-03 2018-07-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR102529187B1 (ko) * 2016-03-31 2023-05-04 삼성전자주식회사 복수의 통신 규격들을 지원하는 수신 인터페이스 회로 및 이를 포함하는 메모리 시스템
KR102475458B1 (ko) * 2016-05-30 2022-12-08 에스케이하이닉스 주식회사 파워 온 리셋 회로 및 이를 포함하는 반도체 메모리 장치
US10304522B2 (en) 2017-01-31 2019-05-28 International Business Machines Corporation Method for low power operation and test using DRAM device
US9916890B1 (en) 2017-02-21 2018-03-13 International Business Machines Corporation Predicting data correlation using multivalued logical outputs in static random access memory (SRAM) storage cells
US10663502B2 (en) 2017-06-02 2020-05-26 International Business Machines Corporation Real time cognitive monitoring of correlations between variables
US10598710B2 (en) 2017-06-02 2020-03-24 International Business Machines Corporation Cognitive analysis using applied analog circuits
US10037792B1 (en) 2017-06-02 2018-07-31 International Business Machines Corporation Optimizing data approximation analysis using low power circuitry
US11526768B2 (en) 2017-06-02 2022-12-13 International Business Machines Corporation Real time cognitive reasoning using a circuit with varying confidence level alerts

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0594694A (ja) * 1991-10-01 1993-04-16 Matsushita Electron Corp プリチヤージ回路
KR0158027B1 (ko) * 1993-12-29 1999-02-01 모리시다 요이치 반도체집적회로
JP3241280B2 (ja) * 1996-11-19 2001-12-25 株式会社東芝 ダイナミック型半導体記憶装置
JP3895838B2 (ja) * 1997-09-10 2007-03-22 株式会社ルネサステクノロジ 半導体記憶装置

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