JP2000036190A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2000036190A
JP2000036190A JP10203456A JP20345698A JP2000036190A JP 2000036190 A JP2000036190 A JP 2000036190A JP 10203456 A JP10203456 A JP 10203456A JP 20345698 A JP20345698 A JP 20345698A JP 2000036190 A JP2000036190 A JP 2000036190A
Authority
JP
Japan
Prior art keywords
power supply
precharge
circuit
precharge power
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10203456A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000036190A5 (enExample
Inventor
Takashi Taira
隆志 平
Kimimasa Imai
公正 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10203456A priority Critical patent/JP2000036190A/ja
Priority to US09/353,856 priority patent/US6081468A/en
Priority to TW088112110A priority patent/TW436787B/zh
Publication of JP2000036190A publication Critical patent/JP2000036190A/ja
Publication of JP2000036190A5 publication Critical patent/JP2000036190A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP10203456A 1998-07-17 1998-07-17 半導体装置 Pending JP2000036190A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP10203456A JP2000036190A (ja) 1998-07-17 1998-07-17 半導体装置
US09/353,856 US6081468A (en) 1998-07-17 1999-07-15 Semiconductor device
TW088112110A TW436787B (en) 1998-07-17 1999-07-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10203456A JP2000036190A (ja) 1998-07-17 1998-07-17 半導体装置

Publications (2)

Publication Number Publication Date
JP2000036190A true JP2000036190A (ja) 2000-02-02
JP2000036190A5 JP2000036190A5 (enExample) 2005-04-28

Family

ID=16474434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10203456A Pending JP2000036190A (ja) 1998-07-17 1998-07-17 半導体装置

Country Status (3)

Country Link
US (1) US6081468A (enExample)
JP (1) JP2000036190A (enExample)
TW (1) TW436787B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6842388B2 (en) 2001-11-20 2005-01-11 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device with bit line precharge voltage generating circuit
JP2015167058A (ja) * 2014-03-03 2015-09-24 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP2016131373A (ja) * 2011-05-06 2016-07-21 株式会社半導体エネルギー研究所 記憶装置

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195262A (ja) * 1998-12-25 2000-07-14 Internatl Business Mach Corp <Ibm> Ｓｄｒａｍ及びｓｄｒａｍのデ―タ・アクセス方法
KR100381968B1 (ko) * 1998-12-30 2004-03-24 주식회사 하이닉스반도체 고속동작용디램
KR100326085B1 (ko) * 2000-02-24 2002-03-07 윤종용 반도체 메모리 장치의 자동 프리차지 제어신호 발생회로및 자동 프리차지 제어방법
US6532185B2 (en) 2001-02-23 2003-03-11 International Business Machines Corporation Distribution of bank accesses in a multiple bank DRAM used as a data buffer
US6590822B2 (en) * 2001-05-07 2003-07-08 Samsung Electronics Co., Ltd. System and method for performing partial array self-refresh operation in a semiconductor memory device
US6728159B2 (en) * 2001-12-21 2004-04-27 International Business Machines Corporation Flexible multibanking interface for embedded memory applications
KR100605606B1 (ko) * 2003-05-29 2006-07-28 주식회사 하이닉스반도체 반도체 메모리 장치의 동기식 셀프 리프레쉬 제어 방법 및제어 회로
JP2007265552A (ja) * 2006-03-29 2007-10-11 Matsushita Electric Ind Co Ltd 半導体記憶装置
KR100825022B1 (ko) * 2006-08-31 2008-04-24 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 구동방법
US7986577B2 (en) * 2007-03-19 2011-07-26 Hynix Semiconductor Inc. Precharge voltage supplying circuit
ITMI20082344A1 (it) * 2008-12-30 2010-06-30 St Microelectronics Srl Metodo per indicizzare piastrine comprendenti circuiti integrati
KR102529187B1 (ko) * 2016-03-31 2023-05-04 삼성전자주식회사 복수의 통신 규격들을 지원하는 수신 인터페이스 회로 및 이를 포함하는 메모리 시스템
KR102475458B1 (ko) * 2016-05-30 2022-12-08 에스케이하이닉스 주식회사 파워 온 리셋 회로 및 이를 포함하는 반도체 메모리 장치
US10304522B2 (en) 2017-01-31 2019-05-28 International Business Machines Corporation Method for low power operation and test using DRAM device
US9916890B1 (en) 2017-02-21 2018-03-13 International Business Machines Corporation Predicting data correlation using multivalued logical outputs in static random access memory (SRAM) storage cells
US10037792B1 (en) 2017-06-02 2018-07-31 International Business Machines Corporation Optimizing data approximation analysis using low power circuitry
US10663502B2 (en) 2017-06-02 2020-05-26 International Business Machines Corporation Real time cognitive monitoring of correlations between variables
US11526768B2 (en) 2017-06-02 2022-12-13 International Business Machines Corporation Real time cognitive reasoning using a circuit with varying confidence level alerts
US10598710B2 (en) 2017-06-02 2020-03-24 International Business Machines Corporation Cognitive analysis using applied analog circuits

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0594694A (ja) * 1991-10-01 1993-04-16 Matsushita Electron Corp プリチヤージ回路
KR0158027B1 (ko) * 1993-12-29 1999-02-01 모리시다 요이치 반도체집적회로
JP3241280B2 (ja) * 1996-11-19 2001-12-25 株式会社東芝 ダイナミック型半導体記憶装置
JP3895838B2 (ja) * 1997-09-10 2007-03-22 株式会社ルネサステクノロジ 半導体記憶装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6842388B2 (en) 2001-11-20 2005-01-11 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device with bit line precharge voltage generating circuit
KR100498218B1 (ko) * 2001-11-20 2005-07-01 마쯔시다덴기산교 가부시키가이샤 반도체 기억 장치
JP2016131373A (ja) * 2011-05-06 2016-07-21 株式会社半導体エネルギー研究所 記憶装置
JP2015167058A (ja) * 2014-03-03 2015-09-24 ルネサスエレクトロニクス株式会社 半導体記憶装置
US9928901B2 (en) 2014-03-03 2018-03-27 Renesas Electronics Corporation SRAM with first and second precharge circuits
US10068641B2 (en) 2014-03-03 2018-09-04 Renesas Electronics Corporation Semiconductor storage device
US10325650B2 (en) 2014-03-03 2019-06-18 Renesas Electronics Corporation Semiconductor storage device

Also Published As

Publication number Publication date
US6081468A (en) 2000-06-27
TW436787B (en) 2001-05-28

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