JP2000030448A5 - - Google Patents

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Publication number
JP2000030448A5
JP2000030448A5 JP1998200655A JP20065598A JP2000030448A5 JP 2000030448 A5 JP2000030448 A5 JP 2000030448A5 JP 1998200655 A JP1998200655 A JP 1998200655A JP 20065598 A JP20065598 A JP 20065598A JP 2000030448 A5 JP2000030448 A5 JP 2000030448A5
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JP
Japan
Prior art keywords
signal
pulse
circuit
rxt
pulse generation
Prior art date
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Pending
Application number
JP1998200655A
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English (en)
Japanese (ja)
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JP2000030448A (ja
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Publication date
Application filed filed Critical
Priority to JP10200655A priority Critical patent/JP2000030448A/ja
Priority claimed from JP10200655A external-priority patent/JP2000030448A/ja
Priority to US09/225,450 priority patent/US6052331A/en
Publication of JP2000030448A publication Critical patent/JP2000030448A/ja
Publication of JP2000030448A5 publication Critical patent/JP2000030448A5/ja
Pending legal-status Critical Current

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JP10200655A 1998-07-15 1998-07-15 同期型半導体記憶装置 Pending JP2000030448A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10200655A JP2000030448A (ja) 1998-07-15 1998-07-15 同期型半導体記憶装置
US09/225,450 US6052331A (en) 1998-07-15 1999-01-06 Synchronous semiconductor device allowing reduction in chip area by sharing delay circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10200655A JP2000030448A (ja) 1998-07-15 1998-07-15 同期型半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2000030448A JP2000030448A (ja) 2000-01-28
JP2000030448A5 true JP2000030448A5 (enExample) 2005-10-20

Family

ID=16428029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10200655A Pending JP2000030448A (ja) 1998-07-15 1998-07-15 同期型半導体記憶装置

Country Status (2)

Country Link
US (1) US6052331A (enExample)
JP (1) JP2000030448A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000067577A (ja) 1998-06-10 2000-03-03 Mitsubishi Electric Corp 同期型半導体記憶装置
JP2001067866A (ja) 1999-08-30 2001-03-16 Mitsubishi Electric Corp 同期型半導体記憶装置
KR100336787B1 (ko) * 2000-01-07 2002-05-16 박종섭 배선을 줄일 수 있는 반도체 메모리 회로 배치
KR100387719B1 (ko) * 2000-12-29 2003-06-18 주식회사 하이닉스반도체 반도체 메모리 장치 및 그의 메모리 셀 블록 활성화 제어방법
US6661721B2 (en) * 2001-12-13 2003-12-09 Infineon Technologies Ag Systems and methods for executing precharge commands using posted precharge in integrated circuit memory devices with memory banks each including local precharge control circuits
KR20030057949A (ko) * 2001-12-29 2003-07-07 삼성전자주식회사 정밀한 동작점 설정이 가능한 입출력 감지 증폭기를구비하는 동기식 디램 반도체 장치
DE10319158A1 (de) * 2003-04-29 2004-11-25 Infineon Technologies Ag Vorrichtung zum flexiblen Deaktivieren von Wortleitungen von dynamischen Speicherbausteinen und Verfahren hierfür
JP4777807B2 (ja) * 2006-03-29 2011-09-21 エルピーダメモリ株式会社 積層メモリ
US7752364B2 (en) * 2006-12-06 2010-07-06 Mosaid Technologies Incorporated Apparatus and method for communicating with semiconductor devices of a serial interconnection
US7865756B2 (en) * 2007-03-12 2011-01-04 Mosaid Technologies Incorporated Methods and apparatus for clock signal synchronization in a configuration of series-connected semiconductor devices
WO2009062280A1 (en) * 2007-11-15 2009-05-22 Mosaid Technologies Incorporated Methods and systems for failure isolation and data recovery in a configuration of series-connected semiconductor devices
US8781053B2 (en) * 2007-12-14 2014-07-15 Conversant Intellectual Property Management Incorporated Clock reproducing and timing method in a system having a plurality of devices
US8467486B2 (en) * 2007-12-14 2013-06-18 Mosaid Technologies Incorporated Memory controller with flexible data alignment to clock
US8145925B2 (en) * 2007-12-21 2012-03-27 Mosaid Technologies Incorporated Non-volatile semiconductor memory device with power saving feature
US8291248B2 (en) 2007-12-21 2012-10-16 Mosaid Technologies Incorporated Non-volatile semiconductor memory device with power saving feature
JP2013097843A (ja) 2011-11-02 2013-05-20 Toshiba Corp 半導体記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5384745A (en) * 1992-04-27 1995-01-24 Mitsubishi Denki Kabushiki Kaisha Synchronous semiconductor memory device
US5384726A (en) * 1993-03-18 1995-01-24 Fujitsu Limited Semiconductor memory device having a capability for controlled activation of sense amplifiers
JP3304531B2 (ja) * 1993-08-24 2002-07-22 富士通株式会社 半導体記憶装置
JPH08221981A (ja) * 1994-12-15 1996-08-30 Mitsubishi Electric Corp 同期型半導体記憶装置
JPH09223389A (ja) * 1996-02-15 1997-08-26 Mitsubishi Electric Corp 同期型半導体記憶装置
JPH10283779A (ja) * 1997-04-09 1998-10-23 Mitsubishi Electric Corp 同期型半導体記憶装置

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