ITMI992650A0 - Dispositivo di memoria non volatile e relativo processo di fabbricazio ne - Google Patents

Dispositivo di memoria non volatile e relativo processo di fabbricazio ne

Info

Publication number
ITMI992650A0
ITMI992650A0 IT99MI002650A ITMI992650A ITMI992650A0 IT MI992650 A0 ITMI992650 A0 IT MI992650A0 IT 99MI002650 A IT99MI002650 A IT 99MI002650A IT MI992650 A ITMI992650 A IT MI992650A IT MI992650 A0 ITMI992650 A0 IT MI992650A0
Authority
IT
Italy
Prior art keywords
memory device
manufacturing process
volatile memory
volatile
manufacturing
Prior art date
Application number
IT99MI002650A
Other languages
English (en)
Inventor
Alessandra Foraboschi
Luca Zanotti
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1999MI002650A priority Critical patent/IT1314142B1/it
Publication of ITMI992650A0 publication Critical patent/ITMI992650A0/it
Priority to US09/731,065 priority patent/US20010004119A1/en
Publication of ITMI992650A1 publication Critical patent/ITMI992650A1/it
Application granted granted Critical
Publication of IT1314142B1 publication Critical patent/IT1314142B1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Stored Programmes (AREA)
  • Glass Compositions (AREA)
  • Document Processing Apparatus (AREA)
IT1999MI002650A 1999-12-20 1999-12-20 Dispositivo di memoria non volatile e relativo processo difabbricazione IT1314142B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT1999MI002650A IT1314142B1 (it) 1999-12-20 1999-12-20 Dispositivo di memoria non volatile e relativo processo difabbricazione
US09/731,065 US20010004119A1 (en) 1999-12-20 2000-12-06 Non-volatile memory device and manufacturing process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1999MI002650A IT1314142B1 (it) 1999-12-20 1999-12-20 Dispositivo di memoria non volatile e relativo processo difabbricazione

Publications (3)

Publication Number Publication Date
ITMI992650A0 true ITMI992650A0 (it) 1999-12-20
ITMI992650A1 ITMI992650A1 (it) 2001-06-20
IT1314142B1 IT1314142B1 (it) 2002-12-04

Family

ID=11384150

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999MI002650A IT1314142B1 (it) 1999-12-20 1999-12-20 Dispositivo di memoria non volatile e relativo processo difabbricazione

Country Status (2)

Country Link
US (1) US20010004119A1 (it)
IT (1) IT1314142B1 (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006173479A (ja) * 2004-12-17 2006-06-29 Sharp Corp 半導体装置の製造方法
US10777561B2 (en) * 2019-01-28 2020-09-15 Micron Technology, Inc. Semiconductor structure formation

Also Published As

Publication number Publication date
ITMI992650A1 (it) 2001-06-20
US20010004119A1 (en) 2001-06-21
IT1314142B1 (it) 2002-12-04

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