DE1035590T1 - Nichtflüchtige ferroelektrische Kapazität und nichtflüchtige ferroelektrische Speicheranordnung - Google Patents
Nichtflüchtige ferroelektrische Kapazität und nichtflüchtige ferroelektrische SpeicheranordnungInfo
- Publication number
- DE1035590T1 DE1035590T1 DE1035590T DE00400582T DE1035590T1 DE 1035590 T1 DE1035590 T1 DE 1035590T1 DE 1035590 T DE1035590 T DE 1035590T DE 00400582 T DE00400582 T DE 00400582T DE 1035590 T1 DE1035590 T1 DE 1035590T1
- Authority
- DE
- Germany
- Prior art keywords
- volatile ferroelectric
- memory device
- capacitance
- ferroelectric memory
- volatile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990008012A KR100313253B1 (ko) | 1999-03-10 | 1999-03-10 | 반도체 메모리 셀용 적층형 페로브스카이트 강유전체 캐패시터 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1035590T1 true DE1035590T1 (de) | 2001-05-23 |
Family
ID=19576183
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1035590T Pending DE1035590T1 (de) | 1999-03-10 | 2000-03-03 | Nichtflüchtige ferroelektrische Kapazität und nichtflüchtige ferroelektrische Speicheranordnung |
Country Status (7)
Country | Link |
---|---|
US (1) | US6323512B1 (de) |
EP (1) | EP1035590A3 (de) |
JP (1) | JP3564354B2 (de) |
KR (1) | KR100313253B1 (de) |
DE (1) | DE1035590T1 (de) |
ES (1) | ES2154248T1 (de) |
TW (1) | TW462124B (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030152813A1 (en) * | 1992-10-23 | 2003-08-14 | Symetrix Corporation | Lanthanide series layered superlattice materials for integrated circuit appalications |
DE10050076C2 (de) * | 2000-10-10 | 2003-09-18 | Infineon Technologies Ag | Verfahren zur Herstellung einer ferromagnetischen Struktur und ferromagnetisches Bauelement |
KR100498608B1 (ko) * | 2000-12-30 | 2005-07-01 | 주식회사 하이닉스반도체 | 강유전체 캐패시터 제조 방법 |
KR100399074B1 (ko) * | 2001-04-27 | 2003-09-26 | 주식회사 하이닉스반도체 | 비엘티 강유전체막을 구비하는 강유전체 메모리 소자 제조방법 |
US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
US6858862B2 (en) | 2001-06-29 | 2005-02-22 | Intel Corporation | Discrete polymer memory array and method of making same |
US6960479B2 (en) * | 2001-07-20 | 2005-11-01 | Intel Corporation | Stacked ferroelectric memory device and method of making same |
US6624457B2 (en) | 2001-07-20 | 2003-09-23 | Intel Corporation | Stepped structure for a multi-rank, stacked polymer memory device and method of making same |
US6734456B2 (en) | 2001-11-15 | 2004-05-11 | Matsushita Electric Industrial Co., Ltd. | Ferroelectric film and semiconductor device |
US6515325B1 (en) * | 2002-03-06 | 2003-02-04 | Micron Technology, Inc. | Nanotube semiconductor devices and methods for making the same |
KR100471400B1 (ko) * | 2002-06-29 | 2005-03-10 | 주식회사 하이닉스반도체 | 비스무스계 강유전체막의 형성 방법 |
US6928376B2 (en) * | 2002-10-03 | 2005-08-09 | Texas Instruments Incorporated | Apparatus and methods for ferroelectric ram fatigue testing |
DE102005018029A1 (de) * | 2005-04-14 | 2006-10-26 | Infineon Technologies Ag | Verfahren zum Herstellen eines elektrischen Bauelements |
JP5094334B2 (ja) * | 2006-12-25 | 2012-12-12 | 京セラ株式会社 | 圧電磁器および圧電素子 |
KR20200073165A (ko) | 2018-12-13 | 2020-06-23 | 서울대학교산학협력단 | 무연 무기-무기 할라이드 페로브스카이트 물질을 이용한 비휘발성 저항 변화 메모리 |
US11437574B2 (en) | 2018-12-13 | 2022-09-06 | Seoul University R&Db Foundation | Non-volatile resistive-switching memory containing halide perovskite material and method for fabricating the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5519234A (en) | 1991-02-25 | 1996-05-21 | Symetrix Corporation | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current |
WO1993021637A1 (en) | 1992-04-13 | 1993-10-28 | Ceram, Inc. | Multilayer electrodes for ferroelectric devices |
JPH06305713A (ja) * | 1993-04-16 | 1994-11-01 | Texas Instr Japan Ltd | ゾルーゲル法による強誘電体膜の形成方法及びキャパシタの製造方法、及びその原料溶液 |
JPH0758222A (ja) * | 1993-06-07 | 1995-03-03 | Ricoh Co Ltd | 強誘電体材料および該材料をゲートとして用いたmfsfet |
US5479317A (en) * | 1994-10-05 | 1995-12-26 | Bell Communications Research, Inc. | Ferroelectric capacitor heterostructure and method of making same |
-
1999
- 1999-03-10 KR KR1019990008012A patent/KR100313253B1/ko not_active IP Right Cessation
-
2000
- 2000-03-03 TW TW089103780A patent/TW462124B/zh not_active IP Right Cessation
- 2000-03-03 DE DE1035590T patent/DE1035590T1/de active Pending
- 2000-03-03 ES ES00400582T patent/ES2154248T1/es active Pending
- 2000-03-03 EP EP00400582A patent/EP1035590A3/de not_active Withdrawn
- 2000-03-06 JP JP2000060909A patent/JP3564354B2/ja not_active Expired - Fee Related
- 2000-03-07 US US09/520,691 patent/US6323512B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1035590A2 (de) | 2000-09-13 |
ES2154248T1 (es) | 2001-04-01 |
EP1035590A3 (de) | 2002-04-03 |
TW462124B (en) | 2001-11-01 |
KR20000060014A (ko) | 2000-10-16 |
JP3564354B2 (ja) | 2004-09-08 |
KR100313253B1 (ko) | 2001-11-05 |
US6323512B1 (en) | 2001-11-27 |
JP2000260960A (ja) | 2000-09-22 |
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