ITMI912535A0 - Procedimento per fabbricare un condensatore a cella di dram e struttura di esso - Google Patents

Procedimento per fabbricare un condensatore a cella di dram e struttura di esso

Info

Publication number
ITMI912535A0
ITMI912535A0 IT91MI2535A ITMI912535A ITMI912535A0 IT MI912535 A0 ITMI912535 A0 IT MI912535A0 IT 91MI2535 A IT91MI2535 A IT 91MI2535A IT MI912535 A ITMI912535 A IT MI912535A IT MI912535 A0 ITMI912535 A0 IT MI912535A0
Authority
IT
Italy
Prior art keywords
procedure
manufacturing
dram cell
cell capacitor
capacitor
Prior art date
Application number
IT91MI2535A
Other languages
English (en)
Inventor
Oh Hyun Kwon
Taek-Yong Jang
Joong-Hyun Shin
Kyoung-Seok Oh
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI912535A0 publication Critical patent/ITMI912535A0/it
Publication of ITMI912535A1 publication Critical patent/ITMI912535A1/it
Application granted granted Critical
Publication of IT1251855B publication Critical patent/IT1251855B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
ITMI912535A 1991-05-23 1991-09-24 Procedimento per fabbricare un condensatore a cella di dram e struttura di esso IT1251855B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910008366A KR940006587B1 (ko) 1991-05-23 1991-05-23 디램셀의 캐패시터 제조방법

Publications (3)

Publication Number Publication Date
ITMI912535A0 true ITMI912535A0 (it) 1991-09-24
ITMI912535A1 ITMI912535A1 (it) 1993-03-24
IT1251855B IT1251855B (it) 1995-05-26

Family

ID=19314810

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI912535A IT1251855B (it) 1991-05-23 1991-09-24 Procedimento per fabbricare un condensatore a cella di dram e struttura di esso

Country Status (7)

Country Link
US (1) US5364809A (it)
JP (1) JP2501501B2 (it)
KR (1) KR940006587B1 (it)
DE (1) DE4126046C2 (it)
FR (1) FR2676863B1 (it)
GB (1) GB2256089B (it)
IT (1) IT1251855B (it)

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US5162248A (en) * 1992-03-13 1992-11-10 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
USRE39665E1 (en) 1992-03-13 2007-05-29 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
KR950021710A (ko) * 1993-12-01 1995-07-26 김주용 반도체 장치의 캐패시터 제조방법
US5536671A (en) * 1993-12-28 1996-07-16 Hyundai Electronics Industries, Co., Ltd. Method for fabricating capacitor of a semiconductor device
KR960006030A (ko) * 1994-07-18 1996-02-23 김주용 반도체소자의 캐패시터 제조방법
US5550077A (en) * 1995-05-05 1996-08-27 Vanguard International Semiconductor Corporation DRAM cell with a comb-type capacitor
US7294578B1 (en) * 1995-06-02 2007-11-13 Micron Technology, Inc. Use of a plasma source to form a layer during the formation of a semiconductor device
US5950092A (en) * 1995-06-02 1999-09-07 Micron Technology, Inc. Use of a plasma source to form a layer during the formation of a semiconductor device
US6716769B1 (en) 1995-06-02 2004-04-06 Micron Technology, Inc. Use of a plasma source to form a layer during the formation of a semiconductor device
US5627094A (en) * 1995-12-04 1997-05-06 Chartered Semiconductor Manufacturing Pte, Ltd. Stacked container capacitor using chemical mechanical polishing
US5607874A (en) * 1996-02-02 1997-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a DRAM cell with a T shaped storage capacitor
US5856220A (en) * 1996-02-08 1999-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a double wall tub shaped capacitor
US5702989A (en) * 1996-02-08 1997-12-30 Taiwan Semiconductor Manufacturing Company Ltd. Method for fabricating a tub structured stacked capacitor for a DRAM cell having a central column
US5940713A (en) * 1996-03-01 1999-08-17 Micron Technology, Inc. Method for constructing multiple container capacitor
US5604146A (en) * 1996-06-10 1997-02-18 Vanguard International Semiconductor Corporation Method to fabricate a semiconductor memory device having an E-shaped storage node
US5721154A (en) * 1996-06-18 1998-02-24 Vanguard International Semiconductor Method for fabricating a four fin capacitor structure
US5998256A (en) * 1996-11-01 1999-12-07 Micron Technology, Inc. Semiconductor processing methods of forming devices on a substrate, forming device arrays on a substrate, forming conductive lines on a substrate, and forming capacitor arrays on a substrate, and integrated circuitry
US5726086A (en) * 1996-11-18 1998-03-10 Mosel Vitelic Inc. Method of making self-aligned cylindrical capacitor structure of stack DRAMS
US6534409B1 (en) 1996-12-04 2003-03-18 Micron Technology, Inc. Silicon oxide co-deposition/etching process
US5972769A (en) * 1996-12-20 1999-10-26 Texas Instruments Incoporated Self-aligned multiple crown storage capacitor and method of formation
US6146961A (en) * 1997-06-23 2000-11-14 Micron Technology, Inc. Processing methods of forming a capacitor
US6590250B2 (en) 1997-11-25 2003-07-08 Micron Technology, Inc. DRAM capacitor array and integrated device array of substantially identically shaped devices
US6037213A (en) * 1998-06-03 2000-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making cylinder-shaped capacitors for dynamic random access memory
KR100533376B1 (ko) * 1998-12-30 2006-04-21 주식회사 하이닉스반도체 반도체 장치의 크라운형 커패시터 제조 방법
TW448565B (en) * 1999-06-03 2001-08-01 Taiwan Semiconductor Mfg Structure and manufacture method for window-frame type capacitor
US6297121B1 (en) * 2000-08-16 2001-10-02 Vanguard International Semiconductor Corporation Fabrication method for capacitors in integrated circuits with a self-aligned contact structure
KR100599051B1 (ko) 2004-01-12 2006-07-12 삼성전자주식회사 향상된 캐패시턴스를 갖는 캐패시터 및 그 제조 방법
FR2885452A1 (fr) * 2005-05-04 2006-11-10 St Microelectronics Sa Circuit integre comprenant au moins un condensateur et procede de formation de condensateur
US9997548B1 (en) * 2017-05-11 2018-06-12 Himax Technologies Limited Method of fabricating semiconductor display apparatus

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JPS62286270A (ja) * 1986-06-05 1987-12-12 Sony Corp 半導体メモリ装置
JPS6474752A (en) * 1987-09-17 1989-03-20 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JP2744457B2 (ja) * 1989-02-28 1998-04-28 株式会社日立製作所 半導体装置およびその製造方法
JP2645069B2 (ja) * 1988-04-07 1997-08-25 富士通株式会社 半導体集積回路装置
JP2723530B2 (ja) * 1988-04-13 1998-03-09 日本電気株式会社 ダイナミック型ランダムアクセスメモリ装置の製造方法
US5075428A (en) * 1988-07-30 1991-12-24 Bayer Aktiengesellschaft 2,4-diamino-6-fluorotriazine disazo reactive dyestuffs
JPH0276257A (ja) * 1988-09-12 1990-03-15 Sharp Corp 半導体メモリ素子
JPH0290563A (ja) * 1988-09-28 1990-03-30 Hitachi Ltd 電荷蓄積キヤパシタ
JP2724209B2 (ja) * 1989-06-20 1998-03-09 シャープ株式会社 半導体メモリ素子の製造方法
US5047826A (en) * 1989-06-30 1991-09-10 Texas Instruments Incorporated Gigaohm load resistor for BICMOS process
JP2514435B2 (ja) * 1989-08-02 1996-07-10 三菱電機株式会社 半導体記憶装置およびその製造方法
JPH0364964A (ja) * 1989-08-03 1991-03-20 Toshiba Corp 半導体記憶装置の製造方法
JPH0391957A (ja) * 1989-09-04 1991-04-17 Sony Corp メモリ装置の製造方法
JPH03127859A (ja) * 1989-10-13 1991-05-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH07114260B2 (ja) * 1989-11-23 1995-12-06 財団法人韓国電子通信研究所 コップ状のポリシリコン貯蔵電極を有するスタック構造のｄｒａｍセル，およびその製造方法
DD299990A5 (de) * 1990-02-23 1992-05-14 Dresden Forschzentr Mikroelek Ein-Transistor-Speicherzellenanordnung und Verfahren zu deren Herstellung
US5030585A (en) * 1990-03-22 1991-07-09 Micron Technology, Inc. Split-polysilicon CMOS DRAM process incorporating selective self-aligned silicidation of conductive regions and nitride blanket protection of N-channel regions during P-channel gate spacer formation
JPH0437062A (ja) * 1990-05-31 1992-02-07 Sony Corp スタックトキャパシタ型ｄｒａｍの製造方法
US5126280A (en) * 1991-02-08 1992-06-30 Micron Technology, Inc. Stacked multi-poly spacers with double cell plate capacitor
JPH04264767A (ja) * 1991-02-20 1992-09-21 Fujitsu Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH04350965A (ja) 1992-12-04
US5364809A (en) 1994-11-15
GB2256089A (en) 1992-11-25
GB2256089B (en) 1995-06-07
KR920022525A (ko) 1992-12-19
FR2676863A1 (fr) 1992-11-27
ITMI912535A1 (it) 1993-03-24
GB9120753D0 (en) 1991-11-13
JP2501501B2 (ja) 1996-05-29
IT1251855B (it) 1995-05-26
KR940006587B1 (ko) 1994-07-22
DE4126046C2 (de) 1994-02-24
FR2676863B1 (fr) 1998-09-04
DE4126046A1 (de) 1992-11-26

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970926