IT1153374B - Dispositivo fotovoltaico a piu' strati di semicondutture e procedimento per la sua fabbricazione - Google Patents

Dispositivo fotovoltaico a piu' strati di semicondutture e procedimento per la sua fabbricazione

Info

Publication number
IT1153374B
IT1153374B IT24631/82A IT2463182A IT1153374B IT 1153374 B IT1153374 B IT 1153374B IT 24631/82 A IT24631/82 A IT 24631/82A IT 2463182 A IT2463182 A IT 2463182A IT 1153374 B IT1153374 B IT 1153374B
Authority
IT
Italy
Prior art keywords
semiconductures
procedure
manufacture
photovoltaic device
layer photovoltaic
Prior art date
Application number
IT24631/82A
Other languages
English (en)
Other versions
IT8224631A1 (it
IT8224631A0 (it
Inventor
Chi-Chung Yang
Stranford R Ovshinsky
Arun Madan
David Adler
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IT8224631A0 publication Critical patent/IT8224631A0/it
Publication of IT8224631A1 publication Critical patent/IT8224631A1/it
Application granted granted Critical
Publication of IT1153374B publication Critical patent/IT1153374B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076Multiple junction or tandem solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
IT24631/82A 1981-12-14 1982-12-06 Dispositivo fotovoltaico a piu' strati di semicondutture e procedimento per la sua fabbricazione IT1153374B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/330,571 US4379943A (en) 1981-12-14 1981-12-14 Current enhanced photovoltaic device

Publications (3)

Publication Number Publication Date
IT8224631A0 IT8224631A0 (it) 1982-12-06
IT8224631A1 IT8224631A1 (it) 1984-06-06
IT1153374B true IT1153374B (it) 1987-01-14

Family

ID=23290352

Family Applications (1)

Application Number Title Priority Date Filing Date
IT24631/82A IT1153374B (it) 1981-12-14 1982-12-06 Dispositivo fotovoltaico a piu' strati di semicondutture e procedimento per la sua fabbricazione

Country Status (17)

Country Link
US (1) US4379943A (it)
JP (2) JPS58145171A (it)
AU (1) AU543910B2 (it)
BR (1) BR8207108A (it)
CA (1) CA1189601A (it)
DE (1) DE3244626A1 (it)
FR (1) FR2518318B1 (it)
GB (1) GB2111303B (it)
IE (1) IE54526B1 (it)
IL (1) IL67248A (it)
IN (1) IN156202B (it)
IT (1) IT1153374B (it)
MX (1) MX152173A (it)
NL (1) NL8204754A (it)
PH (1) PH19556A (it)
SE (1) SE457125B (it)
ZA (1) ZA828716B (it)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
US4485125A (en) * 1982-03-19 1984-11-27 Energy Conversion Devices, Inc. Method for continuously producing tandem amorphous photovoltaic cells
US4521447A (en) * 1982-10-18 1985-06-04 Sovonics Solar Systems Method and apparatus for making layered amorphous semiconductor alloys using microwave energy
AU560521B2 (en) * 1982-10-18 1987-04-09 Energy Conversion Devices Inc. Layered amorphous semiconductor alloys
NL8204056A (nl) * 1982-10-21 1984-05-16 Oce Nederland Bv Fotogeleidend element voor toepassing in elektrofotografische kopieerprocessen.
JPH0614552B2 (ja) * 1983-02-02 1994-02-23 富士ゼロックス株式会社 光電変換素子の製造方法
JPS59143362A (ja) * 1983-02-03 1984-08-16 Fuji Xerox Co Ltd パツシベ−シヨン膜
GB2137810B (en) * 1983-03-08 1986-10-22 Agency Ind Science Techn A solar cell of amorphous silicon
US4471155A (en) * 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage
JPS59207620A (ja) * 1983-05-10 1984-11-24 Zenko Hirose アモルフアスシリコン成膜装置
EP0135294A3 (en) * 1983-07-18 1986-08-20 Energy Conversion Devices, Inc. Enhanced narrow band gap alloys for photovoltaic applications
US4782376A (en) * 1983-09-21 1988-11-01 General Electric Company Photovoltaic device with increased open circuit voltage
US4642144A (en) * 1983-10-06 1987-02-10 Exxon Research And Engineering Company Proximity doping of amorphous semiconductors
US4583492A (en) * 1983-12-19 1986-04-22 United Technologies Corporation High rate, low temperature silicon deposition system
JPS60155676A (ja) * 1984-01-24 1985-08-15 Canon Inc プラズマcvd装置
US4531015A (en) * 1984-04-12 1985-07-23 Atlantic Richfield Company PIN Amorphous silicon solar cell with nitrogen compensation
US4542256A (en) * 1984-04-27 1985-09-17 University Of Delaware Graded affinity photovoltaic cell
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
JPH0620147B2 (ja) * 1984-05-11 1994-03-16 三洋電機株式会社 光起電力装置
US4950614A (en) * 1984-05-15 1990-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of making a tandem type semiconductor photoelectric conversion device
US4878097A (en) * 1984-05-15 1989-10-31 Eastman Kodak Company Semiconductor photoelectric conversion device and method for making same
US4547621A (en) * 1984-06-25 1985-10-15 Sovonics Solar Systems Stable photovoltaic devices and method of producing same
JPS6188570A (ja) * 1984-10-05 1986-05-06 Fuji Electric Co Ltd アモルフアスシリコン太陽電池の製造方法
JPS6191974A (ja) * 1984-10-11 1986-05-10 Kanegafuchi Chem Ind Co Ltd 耐熱性マルチジヤンクシヨン型半導体素子
DE8430810U1 (de) * 1984-10-19 1986-05-07 Siemens AG, 1000 Berlin und 8000 München Solarzelle mit graduellem Energiebandabstand mit einem aus amorphem Silizium bestehenden Halbleiterkorper
US4891087A (en) * 1984-10-22 1990-01-02 Texas Instruments Incorporated Isolation substrate ring for plasma reactor
US4616597A (en) * 1984-10-31 1986-10-14 Rca Corporation Apparatus for making a plasma coating
US4839709A (en) * 1985-07-12 1989-06-13 Hewlett-Packard Company Detector and mixer diode operative at zero bias voltage
JPS6249672A (ja) * 1985-08-29 1987-03-04 Sumitomo Electric Ind Ltd アモルフアス光起電力素子
JPS6273784A (ja) * 1985-09-27 1987-04-04 Sanyo Electric Co Ltd 光起電力装置
CA1321660C (en) * 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
JPH0799777B2 (ja) * 1986-03-27 1995-10-25 住友電気工業株式会社 非晶質半導体素子
US4799968A (en) * 1986-09-26 1989-01-24 Sanyo Electric Co., Ltd. Photovoltaic device
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell
JP2575397B2 (ja) * 1987-07-29 1997-01-22 三井東圧化学株式会社 光電変換素子の製造方法
US4816082A (en) * 1987-08-19 1989-03-28 Energy Conversion Devices, Inc. Thin film solar cell including a spatially modulated intrinsic layer
US5275665A (en) * 1988-06-06 1994-01-04 Research Development Corporation Of Japan Method and apparatus for causing plasma reaction under atmospheric pressure
JP2717583B2 (ja) * 1988-11-04 1998-02-18 キヤノン株式会社 積層型光起電力素子
JPH0384966A (ja) * 1989-08-28 1991-04-10 Matsushita Electric Works Ltd 光電変換素子
US5155567A (en) * 1990-01-17 1992-10-13 Ricoh Company, Ltd. Amorphous photoconductive material and photosensor employing the photoconductive material
JP3099957B2 (ja) * 1990-01-17 2000-10-16 株式会社リコー 光導電部材
AU632241B2 (en) * 1990-09-06 1992-12-17 Mitsui Toatsu Chemicals Inc. Amorphous silicon solar cell and method for manufacturing the same
JP2999280B2 (ja) * 1991-02-22 2000-01-17 キヤノン株式会社 光起電力素子
US5256887A (en) * 1991-07-19 1993-10-26 Solarex Corporation Photovoltaic device including a boron doping profile in an i-type layer
US5221854A (en) * 1991-11-18 1993-06-22 United Solar Systems Corporation Protective layer for the back reflector of a photovoltaic device
US5204272A (en) * 1991-12-13 1993-04-20 United Solar Systems Corporation Semiconductor device and microwave process for its manufacture
FR2703797B1 (fr) * 1993-04-06 1995-06-23 Matra Mhs Procede et dispositif de controle de la teneur en bore de borophosphosilicate.
US6080644A (en) * 1998-02-06 2000-06-27 Burr-Brown Corporation Complementary bipolar/CMOS epitaxial structure and process
US20060211272A1 (en) * 2005-03-17 2006-09-21 The Regents Of The University Of California Architecture for high efficiency polymer photovoltaic cells using an optical spacer
US8791359B2 (en) * 2006-01-28 2014-07-29 Banpil Photonics, Inc. High efficiency photovoltaic cells
US8426722B2 (en) * 2006-10-24 2013-04-23 Zetta Research and Development LLC—AQT Series Semiconductor grain and oxide layer for photovoltaic cells
US8373060B2 (en) * 2006-10-24 2013-02-12 Zetta Research and Development LLC—AQT Series Semiconductor grain microstructures for photovoltaic cells
US8158880B1 (en) * 2007-01-17 2012-04-17 Aqt Solar, Inc. Thin-film photovoltaic structures including semiconductor grain and oxide layers
US20080173349A1 (en) * 2007-01-22 2008-07-24 United Solar Ovonic Llc Solar cells for stratospheric and outer space use
US20080257405A1 (en) * 2007-04-18 2008-10-23 Emcore Corp. Multijunction solar cell with strained-balanced quantum well middle cell
US20090272438A1 (en) * 2008-05-05 2009-11-05 Emcore Corporation Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell
CN102067333B (zh) * 2008-06-18 2013-10-30 东电电子太阳能股份公司 用于变换器面板的光伏电池的大规模制造方法以及光伏变换器面板
US7955890B2 (en) * 2008-06-24 2011-06-07 Applied Materials, Inc. Methods for forming an amorphous silicon film in display devices
US20100037937A1 (en) * 2008-08-15 2010-02-18 Sater Bernard L Photovoltaic cell with patterned contacts
US20100037943A1 (en) * 2008-08-14 2010-02-18 Sater Bernard L Vertical multijunction cell with textured surface
US8293079B2 (en) * 2008-08-28 2012-10-23 Mh Solar Co., Ltd. Electrolysis via vertical multi-junction photovoltaic cell
KR101028310B1 (ko) * 2009-06-30 2011-04-11 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US20110083724A1 (en) * 2009-10-08 2011-04-14 Ovshinsky Stanford R Monolithic Integration of Photovoltaic Cells
TW201123508A (en) * 2009-12-22 2011-07-01 Univ Nat Chiao Tung Antireflection layer, method for fabricating antireflection surface, and photovoltaic device applying the same
US20110186119A1 (en) * 2009-12-24 2011-08-04 Atwater Harry A Light-trapping plasmonic back reflector design for solar cells
US9608144B2 (en) * 2011-06-01 2017-03-28 First Solar, Inc. Photovoltaic devices and method of making
US20120325305A1 (en) * 2011-06-21 2012-12-27 International Business Machines Corporation Ohmic contact between thin film solar cell and carbon-based transparent electrode
KR101770267B1 (ko) * 2011-10-04 2017-08-22 엘지전자 주식회사 박막 태양전지 모듈
FR2993087B1 (fr) * 2012-07-06 2014-06-27 Wysips Dispositif pour ameliorer la qualite d'une image recouverte d'un film photovoltaique semi-transparent
US11227966B2 (en) * 2014-04-11 2022-01-18 Sharp Kabushiki Kaisha Photoelectric conversion device
WO2016157979A1 (ja) * 2015-03-31 2016-10-06 株式会社カネカ 光電変換装置および光電変換モジュール
US10446704B2 (en) * 2015-12-30 2019-10-15 International Business Machines Corporation Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices
CN111668324A (zh) * 2019-03-07 2020-09-15 苏州旭创科技有限公司 一种集成光栅反射结构的光探测器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342044A (en) * 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
DE2904171A1 (de) * 1979-02-05 1980-08-14 Siemens Ag Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung
JPS55125680A (en) 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
JPS5936836B2 (ja) * 1979-05-28 1984-09-06 シャープ株式会社 非晶質薄膜太陽電池
JPS561579A (en) * 1979-06-18 1981-01-09 Shunpei Yamazaki Semiconductor device
DE2938260A1 (de) * 1979-09-21 1981-03-26 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Halbleiterbauelement fuer die umsetzung von licht in elektrische energie
JPS5688377A (en) 1979-12-19 1981-07-17 Mitsubishi Electric Corp Solar battery and manufacture thereof
US4270018A (en) * 1979-12-26 1981-05-26 Gibbons James F Amorphous solar cells
JPS5694674A (en) * 1979-12-27 1981-07-31 Nec Corp Thin-film solar cell
JPS56116673A (en) * 1980-02-19 1981-09-12 Sharp Corp Amorphous thin film solar cell
IN157494B (it) * 1980-09-09 1986-04-12 Energy Conversion Devices Inc
US4490453A (en) * 1981-01-16 1984-12-25 Canon Kabushiki Kaisha Photoconductive member of a-silicon with nitrogen
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device

Also Published As

Publication number Publication date
NL8204754A (nl) 1983-07-01
IE54526B1 (en) 1989-11-08
IE822913L (en) 1983-06-14
BR8207108A (pt) 1983-10-11
JPH0434314B2 (it) 1992-06-05
IL67248A (en) 1986-03-31
JPH07123169B2 (ja) 1995-12-25
SE457125B (sv) 1988-11-28
IT8224631A1 (it) 1984-06-06
US4379943A (en) 1983-04-12
AU543910B2 (en) 1985-05-09
DE3244626A1 (de) 1983-06-16
JPS58145171A (ja) 1983-08-29
SE8207034L (sv) 1983-06-15
FR2518318B1 (fr) 1987-10-02
GB2111303A (en) 1983-06-29
AU9145282A (en) 1983-06-23
GB2111303B (en) 1985-07-03
IN156202B (it) 1985-06-01
ZA828716B (en) 1983-10-26
DE3244626C2 (it) 1989-09-28
JPH06188440A (ja) 1994-07-08
IL67248A0 (en) 1983-03-31
SE8207034D0 (sv) 1982-12-09
MX152173A (es) 1985-06-04
FR2518318A1 (fr) 1983-06-17
IT8224631A0 (it) 1982-12-06
CA1189601A (en) 1985-06-25
PH19556A (en) 1986-05-21

Similar Documents

Publication Publication Date Title
IT1153374B (it) Dispositivo fotovoltaico a piu' strati di semicondutture e procedimento per la sua fabbricazione
IT8247990A0 (it) Procedimento e dispositivo per laproduzione di tavole a piu' strati
IT8822862A0 (it) Procedimento per la fabbricazione di pellicole a deposito ed apparecchiatura per la sua realizzazione
IT1182349B (it) Lente a contatto e procedimento per la sua preparazione
IT8168603A0 (it) Dispositivo a semiconduttore e procedimento per la sua fabbricazione
IT8449048A0 (it) Dispositivo di chiodatura per l'assemblaggio di due o piu' sezioni di una struttura
IT1161868B (it) Dispositivo a semicondutturi e procedimento per la sua fabbricazione
IT8567314A0 (it) Dispositivo di tenuta a fluido eprocedimento per la sua fabbricazione
IT1140271B (it) Dispositivo a semiconduttore e procedimento per la sua produzione
IT1189369B (it) Massa coesionata grezza fibrosa a piu' strati e procedimento per la sua produzione
IT8249662A0 (it) Trasformatore elettrico e procedimento per la sua fabbricazione
IT8168266A0 (it) Dispositivo a semiconduttore e procedimento per la sua fabbricazione
IT1240977B (it) Procedimento e dispositivo per la produzione di dolci a piu' strati
IT1119478B (it) Deispositivo per l'accoppiamento di conduttori di luce e pocedimento per la sua fabbricazione
IT1186723B (it) 4' -desolororebeccamicina e procedimento per la sua preparazione
IT1202583B (it) Dispositivo per eseguire l'orditura di fili sul subbio di un orditoio e orditoio
IT1213261B (it) Dispositivo a semiconduttore con metallizzazione a piu' spessori eprocedimento per la sua fabbricazione.
IT1163136B (it) Metodo ed apparato per la fabbricazione di pannelli a circuito stampato,a piu' strati
IT8468197A0 (it) Procedimento per la formazione di cataste di oggetti tubolari e simili e dispositivo per la sua attuazione
IT1199637B (it) Procedimento e dispositivo per la fabbricazione di trefoli d'acciaio a piu'strati
IT1171421B (it) Proccentimento per la cernita di componenti a semiconduttori e dispositivo per la sua realizzazione
IT8422846A1 (it) Dispositivo a semiconduttore e procedimento per la sua fabbricazione
IT8222563A0 (it) Dispositivo a semiconduttori eprocedimento per la sua fabbricazione.
IT1180221B (it) Carbocisteinato di zinco e procedimento per la sua preparazione
IT1163873B (it) Guarnizione piatta nonche' procedimento per la sua fabbricazione

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19981231