IN2015DN00369A - - Google Patents
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- IN2015DN00369A IN2015DN00369A IN369DEN2015A IN2015DN00369A IN 2015DN00369 A IN2015DN00369 A IN 2015DN00369A IN 369DEN2015 A IN369DEN2015 A IN 369DEN2015A IN 2015DN00369 A IN2015DN00369 A IN 2015DN00369A
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- IN
- India
- Prior art keywords
- semiconductor
- seal
- seal layer
- semiconductor substrate
- wiring
- Prior art date
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- 239000004065 semiconductor Substances 0.000 abstract 5
- 239000010410 layer Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 125000002091 cationic group Chemical group 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 125000000524 functional group Chemical group 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/02—Polyamines
- C08G73/0206—Polyalkylene(poly)amines
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/02—Polyamines
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02093—Cleaning of porous materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02334—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012158979 | 2012-07-17 | ||
JP2013039944 | 2013-02-28 | ||
PCT/JP2013/069225 WO2014013956A1 (fr) | 2012-07-17 | 2013-07-12 | Dispositif à semi-conducteur, son procédé de fabrication et fluide de rinçage |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2015DN00369A true IN2015DN00369A (fr) | 2015-06-12 |
Family
ID=49948785
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN369DEN2015 IN2015DN00369A (fr) | 2012-07-17 | 2013-07-12 |
Country Status (10)
Country | Link |
---|---|
US (1) | US9780008B2 (fr) |
EP (1) | EP2876675B1 (fr) |
JP (1) | JP5968438B2 (fr) |
KR (1) | KR101682836B1 (fr) |
CN (1) | CN104412376B (fr) |
IL (1) | IL236569B (fr) |
IN (1) | IN2015DN00369A (fr) |
SG (2) | SG10201607504UA (fr) |
TW (1) | TWI602246B (fr) |
WO (1) | WO2014013956A1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107275309B (zh) * | 2011-12-20 | 2021-02-09 | 英特尔公司 | 保形低温密闭性电介质扩散屏障 |
KR101747582B1 (ko) * | 2013-03-27 | 2017-06-14 | 미쓰이 가가쿠 가부시키가이샤 | 복합체의 제조 방법 및 조성물 |
US9847289B2 (en) * | 2014-05-30 | 2017-12-19 | Applied Materials, Inc. | Protective via cap for improved interconnect performance |
SG11201700576UA (en) | 2014-08-08 | 2017-02-27 | Mitsui Chemicals Inc | Sealing composition and method of manufacturing semiconductor device |
JP6438747B2 (ja) * | 2014-11-27 | 2018-12-19 | 三井化学株式会社 | 複合体の製造方法 |
CN107004599B (zh) | 2014-12-17 | 2020-02-18 | 三井化学株式会社 | 基板中间体、贯通通孔电极基板及贯通通孔电极形成方法 |
KR101926294B1 (ko) * | 2015-03-30 | 2018-12-06 | 미쓰이 가가쿠 가부시키가이샤 | 매입 평탄화막의 제조 방법 및 전자 디바이스의 제조 방법 |
JP6427690B2 (ja) * | 2015-11-16 | 2018-11-21 | 三井化学株式会社 | 半導体装置用の膜を生成するための組成物、半導体装置用の膜を生成するための組成物の製造方法、半導体用部材の製造方法、半導体用工程材の製造方法及び半導体装置 |
US10340182B2 (en) * | 2015-11-30 | 2019-07-02 | International Business Machines Corporation | Enhanced via fill material and processing for dual damscene integration |
KR102084164B1 (ko) * | 2018-03-06 | 2020-05-27 | 에스케이씨 주식회사 | 반도체 공정용 조성물 및 반도체 공정 |
KR102674132B1 (ko) | 2018-12-21 | 2024-06-10 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
JP2023131657A (ja) * | 2022-03-09 | 2023-09-22 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理システム |
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JPS4933120B1 (fr) | 1968-06-21 | 1974-09-04 | ||
DK0512026T3 (da) | 1990-01-25 | 1995-03-20 | Mobil Oil Corp | Syntetisk porøst krystallinsk materiale, dets fremstilling og anvendelse |
DE4026978A1 (de) | 1990-08-25 | 1992-02-27 | Bayer Ag | Auf traegern angebrachte ein- oder mehrlagige schichtelemente und ihre herstellung |
EP0534304A1 (fr) | 1991-09-21 | 1993-03-31 | Hoechst Aktiengesellschaft | Polyéthelèneimines à substitution cycloalcoylée et leurs utilisations comme agents hypolipémiants |
TW387936B (en) * | 1997-08-12 | 2000-04-21 | Kanto Kagaku | Washing solution |
US6033993A (en) * | 1997-09-23 | 2000-03-07 | Olin Microelectronic Chemicals, Inc. | Process for removing residues from a semiconductor substrate |
JP2001213958A (ja) | 2000-02-03 | 2001-08-07 | Nippon Shokubai Co Ltd | エチレンイミン重合体およびその製造方法 |
FR2819635B1 (fr) * | 2001-01-18 | 2004-01-23 | St Microelectronics Sa | Procede de fabrication de reseaux d'interconnexions |
JP3648480B2 (ja) | 2001-12-26 | 2005-05-18 | 株式会社東芝 | 半導体装置およびその製造方法 |
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JP4447433B2 (ja) | 2004-01-15 | 2010-04-07 | Necエレクトロニクス株式会社 | 半導体装置の製造方法及び半導体装置 |
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JP4903374B2 (ja) | 2004-09-02 | 2012-03-28 | ローム株式会社 | 半導体装置の製造方法 |
US20060255315A1 (en) * | 2004-11-19 | 2006-11-16 | Yellowaga Deborah L | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
KR101444468B1 (ko) | 2005-10-05 | 2014-10-30 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 에칭후 잔류물을 제거하기 위한 산화성 수성 세정제 |
US7338893B2 (en) * | 2005-11-23 | 2008-03-04 | Texas Instruments Incorporated | Integration of pore sealing liner into dual-damascene methods and devices |
JP2007161784A (ja) * | 2005-12-09 | 2007-06-28 | Fujifilm Corp | 絶縁膜、化合物、膜形成用組成物及び電子デバイス |
JP2008010630A (ja) | 2006-06-29 | 2008-01-17 | Sharp Corp | 半導体装置およびその製造方法 |
JP2008047831A (ja) | 2006-08-21 | 2008-02-28 | Mitsubishi Gas Chem Co Inc | ドライエッチング残渣用洗浄液および洗浄法 |
CN101983223B (zh) | 2008-04-02 | 2013-06-05 | 三井化学株式会社 | 组合物及其制造方法、多孔质材料及其形成方法、层间绝缘膜、半导体材料、半导体器件以及低折射率表面保护膜 |
WO2009153834A1 (fr) | 2008-06-18 | 2009-12-23 | 富士通株式会社 | Dispositif à semi-conducteur et son procédé de fabrication |
CN102224577B (zh) * | 2009-05-29 | 2013-12-04 | 三井化学株式会社 | 半导体用密封组合物、半导体装置及半导体装置的制造方法 |
EP2615635B1 (fr) * | 2010-09-10 | 2016-05-25 | Mitsui Chemicals, Inc. | Procédé de fabrication d'un dispositif semi-conducteur et solution de rinçage |
-
2013
- 2013-07-12 JP JP2014525813A patent/JP5968438B2/ja active Active
- 2013-07-12 SG SG10201607504UA patent/SG10201607504UA/en unknown
- 2013-07-12 US US14/413,554 patent/US9780008B2/en active Active
- 2013-07-12 EP EP13819549.0A patent/EP2876675B1/fr active Active
- 2013-07-12 SG SG11201500194UA patent/SG11201500194UA/en unknown
- 2013-07-12 KR KR1020157000349A patent/KR101682836B1/ko active IP Right Grant
- 2013-07-12 CN CN201380036029.9A patent/CN104412376B/zh active Active
- 2013-07-12 WO PCT/JP2013/069225 patent/WO2014013956A1/fr active Application Filing
- 2013-07-12 IN IN369DEN2015 patent/IN2015DN00369A/en unknown
- 2013-07-17 TW TW102125573A patent/TWI602246B/zh active
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Also Published As
Publication number | Publication date |
---|---|
JP5968438B2 (ja) | 2016-08-10 |
EP2876675A4 (fr) | 2016-06-15 |
US9780008B2 (en) | 2017-10-03 |
WO2014013956A1 (fr) | 2014-01-23 |
KR101682836B1 (ko) | 2016-12-05 |
TWI602246B (zh) | 2017-10-11 |
EP2876675A1 (fr) | 2015-05-27 |
IL236569B (en) | 2018-08-30 |
SG11201500194UA (en) | 2015-04-29 |
TW201407684A (zh) | 2014-02-16 |
KR20150020668A (ko) | 2015-02-26 |
IL236569A0 (en) | 2015-02-26 |
JPWO2014013956A1 (ja) | 2016-06-30 |
EP2876675B1 (fr) | 2021-02-17 |
CN104412376A (zh) | 2015-03-11 |
US20150187670A1 (en) | 2015-07-02 |
SG10201607504UA (en) | 2016-10-28 |
CN104412376B (zh) | 2017-02-08 |
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