IN2014CN03370A - - Google Patents

Info

Publication number
IN2014CN03370A
IN2014CN03370A IN3370CHN2014A IN2014CN03370A IN 2014CN03370 A IN2014CN03370 A IN 2014CN03370A IN 3370CHN2014 A IN3370CHN2014 A IN 3370CHN2014A IN 2014CN03370 A IN2014CN03370 A IN 2014CN03370A
Authority
IN
India
Prior art keywords
substrate
adjacent
die
heat spreader
package
Prior art date
Application number
Other languages
English (en)
Inventor
Debendra Mallik
Srindhar Narasimhan
Mathew J Manusharow
Thomas A Boyd
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of IN2014CN03370A publication Critical patent/IN2014CN03370A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
IN3370CHN2014 2011-12-16 2011-12-16 IN2014CN03370A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2011/065512 WO2013089780A1 (fr) 2011-12-16 2011-12-16 Boîtier pour puce microélectronique, ensemble microélectronique contenant celui-ci, système microélectronique, et procédé de réduction d'une contrainte de puce dans un boîtier microélectronique

Publications (1)

Publication Number Publication Date
IN2014CN03370A true IN2014CN03370A (fr) 2015-07-03

Family

ID=48613051

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3370CHN2014 IN2014CN03370A (fr) 2011-12-16 2011-12-16

Country Status (5)

Country Link
US (1) US9478476B2 (fr)
KR (1) KR101584471B1 (fr)
CN (1) CN103999215B (fr)
IN (1) IN2014CN03370A (fr)
WO (1) WO2013089780A1 (fr)

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US8728872B2 (en) * 2011-08-18 2014-05-20 DY 4 Systems, Inc. Manufacturing process and heat dissipating device for forming interface for electronic component
WO2013089780A1 (fr) 2011-12-16 2013-06-20 Intel Corporation Boîtier pour puce microélectronique, ensemble microélectronique contenant celui-ci, système microélectronique, et procédé de réduction d'une contrainte de puce dans un boîtier microélectronique
KR101983142B1 (ko) * 2013-06-28 2019-08-28 삼성전기주식회사 반도체 패키지
FR3012670A1 (fr) * 2013-10-30 2015-05-01 St Microelectronics Grenoble 2 Systeme electronique comprenant des dispositifs electroniques empiles munis de puces de circuits integres
KR20150072846A (ko) * 2013-12-20 2015-06-30 삼성전기주식회사 반도체 패키지 모듈
US9892990B1 (en) * 2014-07-24 2018-02-13 Amkor Technology, Inc. Semiconductor package lid thermal interface material standoffs
US9860988B2 (en) 2014-12-20 2018-01-02 Intel Corporation Solder contacts for socket assemblies
JP2016225413A (ja) * 2015-05-28 2016-12-28 株式会社ジェイテクト 半導体モジュール
KR102647213B1 (ko) 2016-12-31 2024-03-15 인텔 코포레이션 전자 디바이스 패키지
US9899305B1 (en) * 2017-04-28 2018-02-20 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package structure
US10424527B2 (en) * 2017-11-14 2019-09-24 International Business Machines Corporation Electronic package with tapered pedestal
KR20200097659A (ko) * 2019-02-08 2020-08-19 마벨 아시아 피티이 엘티디. 플립 칩 볼 그리드 어레이용 히트 싱크 설계
US11195779B2 (en) 2019-08-09 2021-12-07 Raytheon Company Electronic module for motherboard
US11948855B1 (en) 2019-09-27 2024-04-02 Rockwell Collins, Inc. Integrated circuit (IC) package with cantilever multi-chip module (MCM) heat spreader
US11158596B2 (en) 2020-03-20 2021-10-26 Advanced Semiconductor Engineering, Inc. Semiconductor device package comprising power module and passive elements
JP2022002237A (ja) * 2020-06-19 2022-01-06 日本電気株式会社 量子デバイス及びその製造方法
US20220196943A1 (en) * 2020-12-22 2022-06-23 Intel Corporation Patch on interposer architecture for low cost optical co-packaging
US20220199486A1 (en) * 2020-12-22 2022-06-23 Intel Corporation Heat extraction path from a laser die using a highly conductive thermal interface material in an optical transceiver
CN114823549B (zh) * 2022-06-27 2022-11-11 北京升宇科技有限公司 一种纵向场效应晶体管vdmos芯片的封装结构及封装方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6229216B1 (en) * 1999-01-11 2001-05-08 Intel Corporation Silicon interposer and multi-chip-module (MCM) with through substrate vias
US6212074B1 (en) * 2000-01-31 2001-04-03 Sun Microsystems, Inc. Apparatus for dissipating heat from a circuit board having a multilevel surface
US6882535B2 (en) * 2003-03-31 2005-04-19 Intel Corporation Integrated heat spreader with downset edge, and method of making same
US7462506B2 (en) * 2006-06-15 2008-12-09 International Business Machines Corporation Carbon dioxide gettering method for a chip module assembly
US7429792B2 (en) 2006-06-29 2008-09-30 Hynix Semiconductor Inc. Stack package with vertically formed heat sink
US7781883B2 (en) * 2008-08-19 2010-08-24 International Business Machines Corporation Electronic package with a thermal interposer and method of manufacturing the same
WO2013089780A1 (fr) 2011-12-16 2013-06-20 Intel Corporation Boîtier pour puce microélectronique, ensemble microélectronique contenant celui-ci, système microélectronique, et procédé de réduction d'une contrainte de puce dans un boîtier microélectronique

Also Published As

Publication number Publication date
KR101584471B1 (ko) 2016-01-22
CN103999215B (zh) 2017-06-13
US20130270691A1 (en) 2013-10-17
US9478476B2 (en) 2016-10-25
CN103999215A (zh) 2014-08-20
WO2013089780A1 (fr) 2013-06-20
KR20140094612A (ko) 2014-07-30

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