HK1183969A1 - 具有無半導體通孔的超薄中介片的半導體封裝件 - Google Patents

具有無半導體通孔的超薄中介片的半導體封裝件

Info

Publication number
HK1183969A1
HK1183969A1 HK13111137.6A HK13111137A HK1183969A1 HK 1183969 A1 HK1183969 A1 HK 1183969A1 HK 13111137 A HK13111137 A HK 13111137A HK 1183969 A1 HK1183969 A1 HK 1183969A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor
ultra
vias
thin interposer
semiconductor package
Prior art date
Application number
HK13111137.6A
Other languages
English (en)
Inventor
桑帕施．
．卡里卡蘭
趙子群
胡坤忠
雷佐爾．拉赫曼．卡恩
彼得．沃倫坎普
陳向東
Original Assignee
美國博通公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美國博通公司 filed Critical 美國博通公司
Publication of HK1183969A1 publication Critical patent/HK1183969A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15192—Resurf arrangement of the internal vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
HK13111137.6A 2011-12-28 2013-09-29 具有無半導體通孔的超薄中介片的半導體封裝件 HK1183969A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/339,234 US9013041B2 (en) 2011-12-28 2011-12-28 Semiconductor package with ultra-thin interposer without through-semiconductor vias

Publications (1)

Publication Number Publication Date
HK1183969A1 true HK1183969A1 (zh) 2014-01-10

Family

ID=48678487

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13111137.6A HK1183969A1 (zh) 2011-12-28 2013-09-29 具有無半導體通孔的超薄中介片的半導體封裝件

Country Status (5)

Country Link
US (1) US9013041B2 (zh)
KR (1) KR20130076748A (zh)
CN (2) CN103187396B (zh)
HK (1) HK1183969A1 (zh)
TW (1) TWI559476B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9013041B2 (en) 2011-12-28 2015-04-21 Broadcom Corporation Semiconductor package with ultra-thin interposer without through-semiconductor vias
US20130242493A1 (en) * 2012-03-13 2013-09-19 Qualcomm Mems Technologies, Inc. Low cost interposer fabricated with additive processes
US10475732B2 (en) 2013-07-12 2019-11-12 Taiwan Semiconductor Manufacturing Co., Ltd. 3DIC package integration for high-frequency RF system
CN105556648B (zh) 2013-10-16 2019-08-27 英特尔公司 集成电路封装衬底
US9275955B2 (en) 2013-12-18 2016-03-01 Intel Corporation Integrated circuit package with embedded bridge
KR101622453B1 (ko) 2014-01-22 2016-05-31 앰코 테크놀로지 코리아 주식회사 반도체 디바이스 및 그 제조 방법
KR20150135611A (ko) 2014-05-22 2015-12-03 에스케이하이닉스 주식회사 멀티 칩 패키지 및 제조 방법
US10211169B2 (en) 2014-05-27 2019-02-19 University Of Florida Research Foundation, Inc. Glass interposer integrated high quality electronic components and systems
CN104637909A (zh) * 2015-01-30 2015-05-20 华进半导体封装先导技术研发中心有限公司 一种三维芯片集成结构及其加工工艺
US10074630B2 (en) * 2015-04-14 2018-09-11 Amkor Technology, Inc. Semiconductor package with high routing density patch
US9735079B2 (en) * 2015-10-08 2017-08-15 Dyi-chung Hu Molding compound wrapped package substrate
US10163856B2 (en) * 2015-10-30 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked integrated circuit structure and method of forming
US10276403B2 (en) * 2016-06-15 2019-04-30 Avago Technologies International Sales Pe. Limited High density redistribution layer (RDL) interconnect bridge using a reconstituted wafer
US20180102776A1 (en) * 2016-10-07 2018-04-12 Altera Corporation Methods and apparatus for managing application-specific power gating on multichip packages
KR20180086804A (ko) * 2017-01-23 2018-08-01 앰코 테크놀로지 인코포레이티드 반도체 디바이스 및 그 제조 방법
US10057976B1 (en) * 2017-08-31 2018-08-21 Xilinx, Inc. Power-ground co-reference transceiver structure to deliver ultra-low crosstalk
US11282776B2 (en) * 2018-02-22 2022-03-22 Xilinx, Inc. High density routing for heterogeneous package integration
US20190312019A1 (en) * 2018-04-10 2019-10-10 Intel Corporation Techniques for die tiling

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6636416B2 (en) 2001-06-14 2003-10-21 Intel Corporation Electronic assembly with laterally connected capacitors and manufacturing method
JP3674780B2 (ja) 2001-11-29 2005-07-20 ユーディナデバイス株式会社 高周波半導体装置
US7317622B2 (en) 2002-12-31 2008-01-08 Intel Corporation Method and apparatus for supplying power to a semiconductor device using a capacitor DC shunt
US6819001B2 (en) * 2003-03-14 2004-11-16 General Electric Company Interposer, interposer package and device assembly employing the same
US7027289B2 (en) * 2004-03-25 2006-04-11 Intel Corporation Extended thin film capacitor (TFC)
US7486525B2 (en) * 2006-08-04 2009-02-03 International Business Machines Corporation Temporary chip attach carrier
US7576435B2 (en) * 2007-04-27 2009-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Low-cost and ultra-fine integrated circuit packaging technique
US20090014852A1 (en) 2007-07-11 2009-01-15 Hsin-Hui Lee Flip-Chip Packaging with Stud Bumps
US7619441B1 (en) * 2008-03-03 2009-11-17 Xilinx, Inc. Apparatus for interconnecting stacked dice on a programmable integrated circuit
US8138014B2 (en) 2010-01-29 2012-03-20 Stats Chippac, Ltd. Method of forming thin profile WLCSP with vertical interconnect over package footprint
US8951839B2 (en) 2010-03-15 2015-02-10 Stats Chippac, Ltd. Semiconductor device and method of forming conductive vias through interconnect structures and encapsulant of WLCSP
US9406738B2 (en) * 2011-07-20 2016-08-02 Xilinx, Inc. Inductive structure formed using through silicon vias
US9013041B2 (en) 2011-12-28 2015-04-21 Broadcom Corporation Semiconductor package with ultra-thin interposer without through-semiconductor vias

Also Published As

Publication number Publication date
CN103187396A (zh) 2013-07-03
TW201330200A (zh) 2013-07-16
CN103187396B (zh) 2016-03-30
TWI559476B (zh) 2016-11-21
US9013041B2 (en) 2015-04-21
US20130168860A1 (en) 2013-07-04
CN203103294U (zh) 2013-07-31
KR20130076748A (ko) 2013-07-08

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20201218