IN2014DN08073A - - Google Patents

Info

Publication number
IN2014DN08073A
IN2014DN08073A IN8073DEN2014A IN2014DN08073A IN 2014DN08073 A IN2014DN08073 A IN 2014DN08073A IN 8073DEN2014 A IN8073DEN2014 A IN 8073DEN2014A IN 2014DN08073 A IN2014DN08073 A IN 2014DN08073A
Authority
IN
India
Prior art keywords
layer
aluminum
aluminum layer
copper
laminated
Prior art date
Application number
Other languages
English (en)
Inventor
Nobuyuki Terasaki
Yoshiyuki Nagatomo
Yoshirou Kuromitsu
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2014DN08073A publication Critical patent/IN2014DN08073A/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
    • B23K20/2333—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer one layer being aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/103—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by bonding or embedding conductive wires or strips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/10—Aluminium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/12—Copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/40—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids
    • H10W40/47—Arrangements for thermal protection or thermal control involving heat exchange by flowing fluids by flowing liquids, e.g. forced water cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
IN8073DEN2014 2012-03-30 2013-03-29 IN2014DN08073A (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012083249 2012-03-30
JP2012203362A JP5403129B2 (ja) 2012-03-30 2012-09-14 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、及びパワーモジュール用基板の製造方法
PCT/JP2013/059500 WO2013147144A1 (ja) 2012-03-30 2013-03-29 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、パワーモジュール、及びパワーモジュール用基板の製造方法

Publications (1)

Publication Number Publication Date
IN2014DN08073A true IN2014DN08073A (de) 2015-05-01

Family

ID=49260386

Family Applications (1)

Application Number Title Priority Date Filing Date
IN8073DEN2014 IN2014DN08073A (de) 2012-03-30 2013-03-29

Country Status (7)

Country Link
US (1) US9723707B2 (de)
EP (1) EP2833398B1 (de)
JP (1) JP5403129B2 (de)
KR (1) KR101971756B1 (de)
CN (1) CN104205323B (de)
IN (1) IN2014DN08073A (de)
WO (1) WO2013147144A1 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN2015DN02361A (de) 2012-09-21 2015-09-04 Mitsubishi Materials Corp
WO2014061588A1 (ja) 2012-10-16 2014-04-24 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール、及びヒートシンク付パワーモジュール用基板の製造方法
JP6307832B2 (ja) * 2013-01-22 2018-04-11 三菱マテリアル株式会社 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール
JP6413229B2 (ja) * 2013-11-14 2018-10-31 三菱マテリアル株式会社 抵抗器及び抵抗器の製造方法
JP6413230B2 (ja) * 2013-11-14 2018-10-31 三菱マテリアル株式会社 抵抗器及び抵抗器の製造方法
US9969654B2 (en) * 2014-01-24 2018-05-15 United Technologies Corporation Method of bonding a metallic component to a non-metallic component using a compliant material
JP6269116B2 (ja) * 2014-02-05 2018-01-31 三菱マテリアル株式会社 下地層付き金属部材、絶縁回路基板、半導体装置、ヒートシンク付き絶縁回路基板、及び、下地層付き金属部材の製造方法
JP6192561B2 (ja) * 2014-02-17 2017-09-06 三菱電機株式会社 電力用半導体装置
JP6384112B2 (ja) 2014-04-25 2018-09-05 三菱マテリアル株式会社 パワーモジュール用基板及びヒートシンク付パワーモジュール用基板
JP6550971B2 (ja) * 2014-07-02 2019-07-31 三菱マテリアル株式会社 接合体の製造方法、多層接合体の製造方法、パワーモジュール用基板の製造方法及びヒートシンク付パワーモジュール用基板の製造方法
WO2016002804A1 (ja) * 2014-07-02 2016-01-07 三菱マテリアル株式会社 接合体の製造方法、多層接合体の製造方法、パワーモジュール用基板の製造方法、ヒートシンク付パワーモジュール用基板の製造方法及び積層体の製造装置
US9837363B2 (en) * 2014-07-04 2017-12-05 Mitsubishi Materials Corporation Power-module substrate unit and power module
JP6396703B2 (ja) * 2014-07-08 2018-09-26 トヨタ自動車株式会社 半導体素子用放熱部品の製造方法
DE112015003487T5 (de) * 2014-07-29 2017-05-11 Denka Company Limited Keramische Leiterplatte und Verfahren zur Herstellung der selben
JP6435711B2 (ja) * 2014-08-21 2018-12-12 三菱マテリアル株式会社 放熱板付パワーモジュール用基板及びパワーモジュール
JP6432465B2 (ja) * 2014-08-26 2018-12-05 三菱マテリアル株式会社 接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク、接合体の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、及び、ヒートシンクの製造方法
JP6432466B2 (ja) * 2014-08-26 2018-12-05 三菱マテリアル株式会社 接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク、接合体の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、及び、ヒートシンクの製造方法
JP6428327B2 (ja) * 2015-02-04 2018-11-28 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板、パワーモジュール、及び、ヒートシンク付パワーモジュール用基板の製造方法
JP6575386B2 (ja) * 2015-03-11 2019-09-18 三菱マテリアル株式会社 接合体の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、及び、ヒートシンクの製造方法
WO2016143631A1 (ja) * 2015-03-11 2016-09-15 三菱マテリアル株式会社 接合体の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、及び、ヒートシンクの製造方法
JP6696215B2 (ja) 2015-04-16 2020-05-20 三菱マテリアル株式会社 接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク、及び、接合体の製造方法、ヒートシンク付パワーモジュール用基板の製造方法、ヒートシンクの製造方法
DE102015111667B4 (de) 2015-07-17 2025-11-06 Rogers Germany Gmbh Substrat für elektrische Schaltkreise und Verfahren zur Herstellung eines derartigen Substrates
JP2017063127A (ja) * 2015-09-25 2017-03-30 三菱マテリアル株式会社 発光モジュール用基板、発光モジュール、冷却器付き発光モジュール用基板、および発光モジュール用基板の製造方法
JP6638282B2 (ja) * 2015-09-25 2020-01-29 三菱マテリアル株式会社 冷却器付き発光モジュールおよび冷却器付き発光モジュールの製造方法
CN108346637B (zh) * 2017-01-24 2019-10-08 比亚迪股份有限公司 一种功率模块及其制造方法
JP6776953B2 (ja) * 2017-03-07 2020-10-28 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板
JP6717245B2 (ja) 2017-03-17 2020-07-01 三菱マテリアル株式会社 接合体の製造方法、絶縁回路基板の製造方法、及び、ヒートシンク付き絶縁回路基板の製造方法
DE102017217537B4 (de) * 2017-10-02 2021-10-21 Danfoss Silicon Power Gmbh Leistungsmodul mit integrierter Kühleinrichtung
JP7039933B2 (ja) * 2017-11-06 2022-03-23 三菱マテリアル株式会社 接合体、絶縁回路基板、ヒートシンク付絶縁回路基板、ヒートシンク、及び、接合体の製造方法、絶縁回路基板の製造方法、ヒートシンク付絶縁回路基板の製造方法、ヒートシンクの製造方法
JP6601512B2 (ja) 2018-01-24 2019-11-06 三菱マテリアル株式会社 ヒートシンク付きパワーモジュール用基板及びパワーモジュール
EP3780087B1 (de) * 2018-03-26 2025-07-30 Mitsubishi Materials Corporation Verfahren zur herstellung eines verbundenen körpers zur isolierung einer leiterplatte und verbundener körper zur isolierung einer leiterplatte
JP7167642B2 (ja) * 2018-11-08 2022-11-09 三菱マテリアル株式会社 接合体、ヒートシンク付絶縁回路基板、及び、ヒートシンク
JP7342371B2 (ja) * 2019-02-14 2023-09-12 三菱マテリアル株式会社 絶縁回路基板、及び、絶縁回路基板の製造方法
CN110216939B (zh) * 2019-04-25 2022-02-15 吉林省中赢高科技有限公司 一种铜铝复合基材及其压力扩散焊接加工方法和应用
JP7051000B2 (ja) * 2020-01-09 2022-04-08 古河電気工業株式会社 金属接合材
JP7608891B2 (ja) * 2021-03-12 2025-01-07 三菱マテリアル株式会社 ヒートシンク一体型絶縁回路基板
WO2022229038A1 (en) * 2021-04-25 2022-11-03 Danfoss Silicon Power Gmbh Electronic device with improved cooling
EP4443491A4 (de) 2021-11-30 2025-12-10 Mitsubishi Materials Corp Metallpaste zum verbinden und verfahren zur herstellung eines verbundenen körpers und verfahren zur herstellung einer isolierten leiterplatte
EP4443492A4 (de) 2021-11-30 2025-11-12 Mitsubishi Materials Corp Material zur vorübergehenden befestigung und herstellungsverfahren für verbundenen körper
US20250029844A1 (en) * 2023-07-19 2025-01-23 Semiconductor Components Industries, Llc Copper features and related methods of forming

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3952938A (en) * 1973-12-10 1976-04-27 Clad Metals, Inc. Method of making multiple member composite metal products
US4427716A (en) * 1983-01-21 1984-01-24 General Electric Company Method for predetermining peel strength at copper/aluminum interface
JP3211856B2 (ja) 1994-11-02 2001-09-25 電気化学工業株式会社 回路基板
JPH08255973A (ja) * 1995-03-17 1996-10-01 Toshiba Corp セラミックス回路基板
JP3171234B2 (ja) 1997-03-26 2001-05-28 三菱マテリアル株式会社 ヒートシンク付セラミック回路基板
JP3012835B2 (ja) 1997-11-07 2000-02-28 電気化学工業株式会社 基板とその製造法、基板に好適な金属接合体
JP2003078086A (ja) * 2001-09-04 2003-03-14 Kubota Corp 半導体素子モジュール基板の積層構造
JP4055596B2 (ja) * 2003-02-05 2008-03-05 日本発条株式会社 複合材
WO2005014217A1 (ja) * 2003-08-07 2005-02-17 Sumitomo Precision Products Co., Ltd. Al-Cu接合構造物およびその製造方法
JP2010034238A (ja) 2008-07-28 2010-02-12 Shin Kobe Electric Mach Co Ltd 配線板
IN2012DN02727A (de) * 2009-09-09 2015-09-11 Mitsubishi Materials Corp
DK2662179T3 (da) * 2009-10-26 2014-10-13 Neomax Materials Co Ltd Aluminiumbindingslegering af en nikkel-magnesiumlegering
US9266188B2 (en) * 2010-06-08 2016-02-23 Neomax Materials Co., Ltd. Aluminum copper clad material
JP5884291B2 (ja) * 2011-04-20 2016-03-15 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板ユニット

Also Published As

Publication number Publication date
WO2013147144A1 (ja) 2013-10-03
JP2013229545A (ja) 2013-11-07
EP2833398A1 (de) 2015-02-04
US20150041188A1 (en) 2015-02-12
KR101971756B1 (ko) 2019-04-23
CN104205323B (zh) 2018-04-06
KR20140142235A (ko) 2014-12-11
JP5403129B2 (ja) 2014-01-29
EP2833398B1 (de) 2018-06-20
CN104205323A (zh) 2014-12-10
US9723707B2 (en) 2017-08-01
EP2833398A4 (de) 2016-01-20

Similar Documents

Publication Publication Date Title
IN2014DN08073A (de)
IN2014DN08029A (de)
TW201613066A (en) Package-on-package options with multiple layer 3-D stacking
WO2012087475A3 (en) Substrate with embedded stacked through-silicon via die
IN2015DN02361A (de)
ECSP15021501A (es) Puerto de carga dedicado a alto voltaje
IN2014DN08074A (de)
EP2485254A4 (de) Isolationsleiterplatte und stromhalbleitervorrichtung oder umrichtermodul damit
EP3026145A4 (de) Kupferfolie mit behandelter oberfläche, kupferfolie mit träger, substrat, harzsubstrat, leiterplatte, kupferkaschiertes laminat und verfahren zur herstellung einer leiterplatte
WO2015009957A3 (en) Circuit assembly and corresponding methods
EP2819134A3 (de) Mehrschichtige elektronische Chip-Komponente, Platte zu deren Montage und Verpackungseinheit daraus
WO2013052672A3 (en) Power management applications of interconnect substrates
PH12013500788A1 (en) Carrier-attached copper foil
EP3008539A4 (de) Stromschaltkreis für unterhaltungselektronikvorrichtungen
PH12016501804A1 (en) Bonds for solar cell metallization
WO2010038179A3 (en) An oled device and an electronic circuit
EA201891963A2 (ru) Система и способ охлаждения силовых электронных устройств
EP3106447A4 (de) Kupfer-/keramikbindung und leistungsmodulsubstrat
EP2753159A4 (de) Laminiertes gesinterters keramisches verdrahtungssubstrat und halbleiterpaket mit dem verdrahtungssubstrat
GB201214529D0 (en) Electronic device
EP3007532A4 (de) Verfahren zur herstellung einer leiterplatte mit daran laminiertem weichmagnetischem film
WO2013036480A3 (en) Backplate with recess and electronic component
MX2013009396A (es) Metodo de ubicacion del conector smt con caracteristica de tapa smt.
WO2014052162A3 (en) Transparent multi-layer structure with transparent electrical routing
IN2014DN09146A (de)