WO2022229038A1 - Electronic device with improved cooling - Google Patents

Electronic device with improved cooling Download PDF

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Publication number
WO2022229038A1
WO2022229038A1 PCT/EP2022/060787 EP2022060787W WO2022229038A1 WO 2022229038 A1 WO2022229038 A1 WO 2022229038A1 EP 2022060787 W EP2022060787 W EP 2022060787W WO 2022229038 A1 WO2022229038 A1 WO 2022229038A1
Authority
WO
WIPO (PCT)
Prior art keywords
electronic device
thickness
intermediate structure
cooling
cooling structure
Prior art date
Application number
PCT/EP2022/060787
Other languages
French (fr)
Inventor
Michael Timmermann
Karsten LUND
Andre Staack
Henning STRÖBEL-MAIER
Ekkehard Handke
Original Assignee
Danfoss Silicon Power Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Priority to DE112022002382.1T priority Critical patent/DE112022002382T5/en
Publication of WO2022229038A1 publication Critical patent/WO2022229038A1/en

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/20927—Liquid coolant without phase change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids

Definitions

  • the present invention relates to an electronic device, comprising: a power module having a circuit carrier on which one or more heat generating circuit components are disposed, a cooling structure, an intermediate structure disposed between the circuit carrier and the cooling structure, wherein the cooling structure is made of a first metal material, and the intermediate structure is made of a second metal material having a higher thermal conductivity than that of the first metal material.
  • an electronic device comprising: a power module having a circuit carrier on which one or more heat generating circuit components are disposed, a cooling structure, an intermediate structure disposed between the circuit carrier and the cooling structure, wherein the cooling structure is made of a first metal material, and the intermediate structure is made of a second metal material having a higher thermal conductivity than that of the first metal material.
  • a part of the electrical energy is transformed into heat by circuit components of the power module (heat loss). This heat needs to be transferred away from the heat generating circuit components to allow reliable more efficient operation and increase the lifetime of the power module.
  • a power module with high power dissipation is often liquid cooled.
  • the intermediate structure comprises a first area with a first thickness and a second area with a second thickness, and that the first thickness is greater than the second thickness.
  • the electronic device is distinguished by the fact that the intermediate structure comprises a varying thickness.
  • the circuit carrier typically is a sheet like structure.
  • the one or more heat generating circuit components can be one or more semiconductor switching components.
  • the intermediate structure can be directly connected to the circuit carrier. This configuration is a great advantage in the conveyance of heat from the circuit carrier to the intermediate structure without the heat having to pass through one or more additional layers, which would inevitably increase the thermal resistance of the conduction path and thus hinder efficient cooling of the components mounted on the circuit carrier.
  • the direct connection may be formed by soldering, brazing, sintering, welding or other processes known in the field which give a permanent connection capable of conducting heat.
  • the cooling structure can be connected directly to the intermediate structure. This configuration is a great advantage in the conveyance of heat from the intermediate structure to the cooling structure without the heat having to pass through one or more additional layers, which would inevitably increase the thermal resistance of the conduction path and thus hinder efficient cooling of the components within the electronic device.
  • the first metal material can be aluminium or an aluminium alloy. Such a material is an advantage for lightness, cost and ease of working. For example, it is possible to form complex cooling channels structures in such a material by the use of forging techniques which are quick to execute.
  • the second metal material can be copper or a copper alloy. Such a material has the advantage that it is a good conductor of het, and it is relatively easy to make connections such as sintered, soldered , brazed or welded connections.
  • the cooling structure and the intermediate structure can be connected in a materially bonded manner.
  • the connection in a materially bonded manner may also be called a substance-to-substance bonded connection.
  • the materially bonded connection between the cooling structure and the intermediate structure provides a reliable attachment of the cooling structure to the intermediate structure. Furthermore, the materially bonded connection provides an efficient thermal conductivity between the cooling structure and intermediate structure.
  • a connection between the cooling structure and the intermediate structure may comprise an intermetallic phase.
  • the intermetallic phase may have a thickness in the range from 5 pm to 40 pm.
  • the intermetallic phase may have a thickness in the range from 10 pm to 20 pm.
  • the first area can overlay at least one of the one or more heat generating circuit components.
  • the boundaries of the first area include the extent of one or more of the heat generating components.
  • the increased thickness of the intermediate layer allows a more efficient dissipation of the heat generated in the heat generating circuit components.
  • the circuit carrier can comprise any one of a lead frame, an insulating substrate such as a direct bonded copper (DBC) substrate or an active metal brazed (AMB) substrate, a printed circuit board (PCB) or other forms of electronic component carrying substrates known in the field.
  • the circuit carrier may form part of a semiconductor power module which may be encased in a molding compound.
  • the thickness of the intermediate structure can be in a range from 25pm to 20 mm.
  • the thickness of the intermediate structure can be in a range from 0.1% to 80% of the total thickness of the cooler and intermediate structure combined.
  • the cooling structure can comprise a housing having a cavity, a flow distributer disposed within the cavity of the housing, and a cover plate configured to seal the cavity of the housing and attached to the intermediate structure.
  • the cooling structure can comprise a main body formed with a fluid flow channel in a top surface thereof; and a cover plate covering the top surface of the main body to seal the fluid flow channel and attached to the intermediate structure.
  • the cooling structure can comprise a main body formed with a fluid flow channel within the main body itself without any immediate openings other than the inlet and outlet openings.
  • the intermediate structure can be bonded to the bottom surface of the circuit carrier through soldering or low pressure silver sintering.
  • the intermediate structure can extend along an entire length of the cooling structure in a first direction.
  • the first direction is parallel with a plane of the circuit carrier.
  • the intermediate structure can extend along an entire length of the cooling structure in a second direction.
  • the second direction is parallel with the plane of the circuit carrier and orthogonal to the first direction.
  • the thickness of the intermediate structure varies continuously.
  • the variation in thickness shows no discontinuities, e.g. the variation in thickness varies in a smooth fashion.
  • the thickness of the intermediate structure comprises discontinuities.
  • the cooling structure comprises cooling ribs.
  • the cooling ribs allow an efficient heat transfer away from the first metal material, by increasing the surface are of the first metal material and thereby the cooling structure.
  • the cooling ribs may be formed as isolated pin (pinfin) structures.
  • the cooling structure comprises fluid paths.
  • the fluid paths allow efficient cooling of the electronic device by transferring the heat from the cooling structure to a fluid cooling agent.
  • the thickness of the intermediate structure comprises a maximum, which maximum overlays one of the one or more heat generating circuit components.
  • the electronic device comprises n heat generating circuit components, and n maxima in thickness of the intermediate structure. Each maximum of the intermediate structure overlays a heat generating component.
  • Fig. 1 shows a cross-section through an embodiment of the electronic device according to the invention
  • Fig. 2 shows a cross-section through another embodiment of the electronic device according to the invention
  • Fig. 3 shows a cross-section through another embodiment of the electronic device according to the invention. Detailed Description of the Invention
  • FIG. 1 shows a cross-section through an embodiment of an electronic device 1 according to the invention.
  • the electronic device comprises a power module 3 having a circuit carrier 5 on which one or more heat generating circuit components 7 are disposed.
  • the electronic device further comprises a cooling structure 11, and an intermediate structure 15 disposed between the circuit carrier 5 and the cooling structure 11.
  • the cooling structure 11 is made of a first metal material 13.
  • the intermediate structure 15 is made of a second metal material 17 having a higher thermal conductivity than that of the first metal material 13.
  • the intermediate structure 15 comprises a first area 19 with a first thickness 21 and a second area 23 with a second thickness 25.
  • the first thickness 21 is greater than the second thickness 25.
  • the thickness of the intermediate structure varies continuous.
  • the first area 19 is overlaying at least one of the one or more heat generating circuit components 7.
  • the cooling structure 11 comprises cooling ribs 29.
  • the thickness of the intermediate structure comprises a maximum 33, which maximum is overlaying one of the one or more heat generating circuit components 7.
  • the cooling structure 11 and the intermediate structure 15 are connected in a materially bonded manner.
  • a connection between the cooling structure 11 and the intermediate structure 15 comprises an intermetallic phase 35.
  • the thickness of the intermetallic phase is in the range from 5 pm to 40 pm. Alternative the thickness of the intermetallic phase is in the range from 10 pm to 20 pm.
  • the intermediate structure 15 extends along an entire length 37 of the cooling structure in a first direction. The first direction is parallel with a plane of the circuit carrier.
  • the intermediate structure 15 extends along an entire length of the cooling structure in a second direction.
  • the second direction is parallel with the plane of the circuit carrier and orthogonal to the first direction.
  • FIG. 2 shows a cross-section through another embodiment of an electronic device 1 according to the invention.
  • the electronic device 1 comprises n heat generating circuit components 7 , and n maxima in thickness of the intermediate structure. Each maximum of the intermediate structure is overlaying a heat generating circuit component 7.
  • n 2 in this example, however n can be any whole number.
  • the cooling structure 11 comprises fluid paths 31.
  • Figure 3 shows a cross-section through another embodiment of an electronic device according to the invention.
  • the thickness of the intermediate structure 15 comprises discontinuities 27 where the thickness abruptly changes from one thickness to another.

Abstract

Electronic device (1), comprising a power module (3) having a circuit carrier (5) on which one or more heat generating circuit components (7) are disposed. A cooling structure (11), and an intermediate structure (15) disposed between the circuit carrier (5) and the cooling structure (11). Wherein the cooling structure (11) is made of a first metal material (13), and the intermediate structure (15) is made of a second metal material (17) having a higher thermal conductivity than that of the first metal material (13). Where the intermediate structure (15) comprises a first area (19) with a first thickness (21) and a second area (23) with a second thickness (25), and that the first thickness (21) is greater than the second thickness (25).

Description

Electronic device with improved cooling
Field of the invention
The present invention relates to an electronic device, comprising: a power module having a circuit carrier on which one or more heat generating circuit components are disposed, a cooling structure, an intermediate structure disposed between the circuit carrier and the cooling structure, wherein the cooling structure is made of a first metal material, and the intermediate structure is made of a second metal material having a higher thermal conductivity than that of the first metal material.
Background of the Invention From W02019/068502 is known an electronic device, comprising: a power module having a circuit carrier on which one or more heat generating circuit components are disposed, a cooling structure, an intermediate structure disposed between the circuit carrier and the cooling structure, wherein the cooling structure is made of a first metal material, and the intermediate structure is made of a second metal material having a higher thermal conductivity than that of the first metal material.
Different applications, for example the use in cars, set high requirements for performance and efficiency of power modules. A part of the electrical energy is transformed into heat by circuit components of the power module (heat loss). This heat needs to be transferred away from the heat generating circuit components to allow reliable more efficient operation and increase the lifetime of the power module. A power module with high power dissipation is often liquid cooled.
Therefore, there exists a need for providing an electronic device with improved cooling efficiency for the heat generating circuit components. It is an object of the invention to provide an electronic device with improved cooling efficiency.
It is an object of the invention to provide an improvement over the state of the art.
Description of the invention The above needs and objects are met with an electronic device according to the introduction, which is distinguished by the fact that the intermediate structure comprises a first area with a first thickness and a second area with a second thickness, and that the first thickness is greater than the second thickness.
Alternatively formulated, the electronic device is distinguished by the fact that the intermediate structure comprises a varying thickness.
By thickness is understood the extent in a direction perpendicular to the plane of the circuit carrier. The circuit carrier typically is a sheet like structure.
The one or more heat generating circuit components can be one or more semiconductor switching components. The intermediate structure can be directly connected to the circuit carrier. This configuration is a great advantage in the conveyance of heat from the circuit carrier to the intermediate structure without the heat having to pass through one or more additional layers, which would inevitably increase the thermal resistance of the conduction path and thus hinder efficient cooling of the components mounted on the circuit carrier. The direct connection may be formed by soldering, brazing, sintering, welding or other processes known in the field which give a permanent connection capable of conducting heat.
The cooling structure can be connected directly to the intermediate structure. This configuration is a great advantage in the conveyance of heat from the intermediate structure to the cooling structure without the heat having to pass through one or more additional layers, which would inevitably increase the thermal resistance of the conduction path and thus hinder efficient cooling of the components within the electronic device.
The first metal material can be aluminium or an aluminium alloy. Such a material is an advantage for lightness, cost and ease of working. For example, it is possible to form complex cooling channels structures in such a material by the use of forging techniques which are quick to execute. The second metal material can be copper or a copper alloy. Such a material has the advantage that it is a good conductor of het, and it is relatively easy to make connections such as sintered, soldered , brazed or welded connections.
The cooling structure and the intermediate structure can be connected in a materially bonded manner. The connection in a materially bonded manner may also be called a substance-to-substance bonded connection. The materially bonded connection between the cooling structure and the intermediate structure provides a reliable attachment of the cooling structure to the intermediate structure. Furthermore, the materially bonded connection provides an efficient thermal conductivity between the cooling structure and intermediate structure.
A connection between the cooling structure and the intermediate structure may comprise an intermetallic phase. The intermetallic phase may have a thickness in the range from 5 pm to 40 pm. The intermetallic phase may have a thickness in the range from 10 pm to 20 pm.
The first area can overlay at least one of the one or more heat generating circuit components. By this is meant that in plan view (in a direction perpendicular to the plane of the circuit carrier) the boundaries of the first area include the extent of one or more of the heat generating components.
The increased thickness of the intermediate layer allows a more efficient dissipation of the heat generated in the heat generating circuit components. The circuit carrier can comprise any one of a lead frame, an insulating substrate such as a direct bonded copper (DBC) substrate or an active metal brazed (AMB) substrate, a printed circuit board (PCB) or other forms of electronic component carrying substrates known in the field. Alternatively or additionally, the circuit carrier may form part of a semiconductor power module which may be encased in a molding compound.
The thickness of the intermediate structure can be in a range from 25pm to 20 mm.
The thickness of the intermediate structure can be in a range from 0.1% to 80% of the total thickness of the cooler and intermediate structure combined.
The cooling structure can comprise a housing having a cavity, a flow distributer disposed within the cavity of the housing, and a cover plate configured to seal the cavity of the housing and attached to the intermediate structure.
Alternatively, the cooling structure can comprise a main body formed with a fluid flow channel in a top surface thereof; and a cover plate covering the top surface of the main body to seal the fluid flow channel and attached to the intermediate structure.
Alternatively, the cooling structure can comprise a main body formed with a fluid flow channel within the main body itself without any immediate openings other than the inlet and outlet openings.
The intermediate structure can be bonded to the bottom surface of the circuit carrier through soldering or low pressure silver sintering. The intermediate structure can extend along an entire length of the cooling structure in a first direction. The first direction is parallel with a plane of the circuit carrier.
The intermediate structure can extend along an entire length of the cooling structure in a second direction. The second direction is parallel with the plane of the circuit carrier and orthogonal to the first direction.
In a further embodiment, the thickness of the intermediate structure varies continuously. By continuously, it is understood that the variation in thickness shows no discontinuities, e.g. the variation in thickness varies in a smooth fashion.
In a further embodiment, the thickness of the intermediate structure comprises discontinuities.
In a further embodiment the cooling structure comprises cooling ribs. The cooling ribs allow an efficient heat transfer away from the first metal material, by increasing the surface are of the first metal material and thereby the cooling structure. The cooling ribs may be formed as isolated pin (pinfin) structures.
In a further embodiment the cooling structure comprises fluid paths. The fluid paths allow efficient cooling of the electronic device by transferring the heat from the cooling structure to a fluid cooling agent.
In a further embodiment the thickness of the intermediate structure comprises a maximum, which maximum overlays one of the one or more heat generating circuit components.
In a further embodiment the electronic device comprises n heat generating circuit components, and n maxima in thickness of the intermediate structure. Each maximum of the intermediate structure overlays a heat generating component. Description of the Drawings
Fig. 1 shows a cross-section through an embodiment of the electronic device according to the invention, Fig. 2 shows a cross-section through another embodiment of the electronic device according to the invention, and
Fig. 3 shows a cross-section through another embodiment of the electronic device according to the invention. Detailed Description of the Invention
In the following text the figures will be described one by one, and the different parts and positions seen in the figures will be numbered with the same numbers in the different figures. Not all parts and positions indicated in a specific figure will necessarily be discussed together with that figure.
List of Reference Numerals
I Electronic device
3 Power module
5 Circuit carrier
7 Heat generating circuit component
9 Semiconductor switching component
II Cooling structure
13 First metal material
15 Intermediate structure
17 Second metal material
19 First area, intermediate structure
21 First thickness
23 Second area, intermediate structure
25 Second thickness
27 Discontinuities
29 Cooling ribs
31 Fluid paths
33 Maximum
35 Intermetallic phase
37 Length of the cooling structure along a first direction Fig. 1 shows a cross-section through an embodiment of an electronic device 1 according to the invention. The electronic device comprises a power module 3 having a circuit carrier 5 on which one or more heat generating circuit components 7 are disposed. The electronic device further comprises a cooling structure 11, and an intermediate structure 15 disposed between the circuit carrier 5 and the cooling structure 11.
The cooling structure 11 is made of a first metal material 13. The intermediate structure 15 is made of a second metal material 17 having a higher thermal conductivity than that of the first metal material 13. The intermediate structure 15 comprises a first area 19 with a first thickness 21 and a second area 23 with a second thickness 25. The first thickness 21 is greater than the second thickness 25.
The thickness of the intermediate structure varies continuous.
The first area 19 is overlaying at least one of the one or more heat generating circuit components 7.
The cooling structure 11 comprises cooling ribs 29.
The thickness of the intermediate structure comprises a maximum 33, which maximum is overlaying one of the one or more heat generating circuit components 7. The cooling structure 11 and the intermediate structure 15 are connected in a materially bonded manner.
A connection between the cooling structure 11 and the intermediate structure 15 comprises an intermetallic phase 35. The thickness of the intermetallic phase is in the range from 5 pm to 40 pm. Alternative the thickness of the intermetallic phase is in the range from 10 pm to 20 pm. The intermediate structure 15 extends along an entire length 37 of the cooling structure in a first direction. The first direction is parallel with a plane of the circuit carrier.
The intermediate structure 15 extends along an entire length of the cooling structure in a second direction. The second direction is parallel with the plane of the circuit carrier and orthogonal to the first direction.
Figure 2 shows a cross-section through another embodiment of an electronic device 1 according to the invention. The electronic device 1 comprises n heat generating circuit components 7 , and n maxima in thickness of the intermediate structure. Each maximum of the intermediate structure is overlaying a heat generating circuit component 7. n= 2 in this example, however n can be any whole number.
The cooling structure 11 comprises fluid paths 31. Figure 3 shows a cross-section through another embodiment of an electronic device according to the invention. The thickness of the intermediate structure 15 comprises discontinuities 27 where the thickness abruptly changes from one thickness to another.

Claims

1 CLAIMS
1. Electronic device (1), comprising a power module (3) having a circuit carrier (5) on which one or more heat generating circuit components (7) are disposed, a cooling structure (11), and an intermediate structure (15) disposed between the circuit carrier (5) and the cooling structure (11), wherein the cooling structure (11) is made of a first metal material (13), and the intermediate structure (15) is made of a second metal material (17) having a higher thermal conductivity than that of the first metal material (13), characterised in, that the intermediate structure (15) comprises a first area (19) with a first thickness (21) and a second area (23) with a second thickness (25), and that the first thickness (21) is greater than the second thickness (25).
2. Electronic device (1) according to claim 1, wherein the cooling structure (11) and the intermediate structure (15) are connected in a materially bonded manner.
3. Electronic device (1) according to claim 1 or 2, wherein a connection between the cooling structure (11) and the intermediate structure (15) comprises an intermetallic phase (35), preferably having a thickness in the range from 5 pm to 40 pm, further preferably in the range from 10 pm to 20 pm.
4. Electronic device (1) according to any one of the previous claims, wherein the intermediate structure (15) extends along an entire length (37) of the cooling structure in a first direction, which first direction is parallel with a plane of the circuit carrier. 2
5. Electronic device (1) according to claim 4, wherein the intermediate structure (15) extends along an entire length of the cooling structure in a second direction, which second direction is parallel with the plane of the circuit carrier and orthogonal to the first direction.
6. Electronic device (1) according to any one of the previous claims, wherein the first area (19) overlays at least one of the one or more heat generating circuit components (7).
7. Electronic device (1) according to claim 1, wherein the thickness of the intermediate structure varies continuously.
8. Electronic device according to claim 1, wherein the thickness of the intermediate structure (15) comprises discontinuities (27).
9. Electronic device (1) according to any one of the previous claims, wherein the cooling structure comprises cooling ribs (29).
10. Electronic device (1) according to any one of the previous claims, wherein the cooling structure (11) comprises fluid paths (31).
11. Electronic device (1) according to any one of the previous claims, wherein the thickness of the intermediate structure comprises a maximum (33), which maximum overlays one of the one or more heat generating circuit components.
12. Electronic device according to any one of the previous claims, comprising n heat generating circuit components, and n maxima in thickness of the intermediate structure, where each maximum of the intermediate structure overlays a heat generating circuit component (7).
PCT/EP2022/060787 2021-04-25 2022-04-22 Electronic device with improved cooling WO2022229038A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE112022002382.1T DE112022002382T5 (en) 2021-04-25 2022-04-22 Electronic device with improved cooling

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DKPA202100406 2021-04-25
DKPA202100406 2021-04-25

Publications (1)

Publication Number Publication Date
WO2022229038A1 true WO2022229038A1 (en) 2022-11-03

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ID=81841958

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PCT/EP2022/060787 WO2022229038A1 (en) 2021-04-25 2022-04-22 Electronic device with improved cooling

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DE (1) DE112022002382T5 (en)
WO (1) WO2022229038A1 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455458A (en) * 1993-08-09 1995-10-03 Hughes Aircraft Company Phase change cooling of semiconductor power modules
US20090141451A1 (en) * 2007-11-21 2009-06-04 Shogo Mori Heat dissipation apparatus
US20130062750A1 (en) * 2011-09-12 2013-03-14 Infineon Technologies Ag Semiconductor device including cladded base plate
US20150041188A1 (en) * 2012-03-30 2015-02-12 Mitsubishi Material Corporation Power module substrate, power module substrate with heatsink, power module, and method for producing power module substrate
WO2019068502A1 (en) 2017-10-02 2019-04-11 Danfoss Silicon Power Gmbh Power module with integrated cooling device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5455458A (en) * 1993-08-09 1995-10-03 Hughes Aircraft Company Phase change cooling of semiconductor power modules
US20090141451A1 (en) * 2007-11-21 2009-06-04 Shogo Mori Heat dissipation apparatus
US20130062750A1 (en) * 2011-09-12 2013-03-14 Infineon Technologies Ag Semiconductor device including cladded base plate
US20150041188A1 (en) * 2012-03-30 2015-02-12 Mitsubishi Material Corporation Power module substrate, power module substrate with heatsink, power module, and method for producing power module substrate
WO2019068502A1 (en) 2017-10-02 2019-04-11 Danfoss Silicon Power Gmbh Power module with integrated cooling device

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