IN2014DN08029A - - Google Patents

Info

Publication number
IN2014DN08029A
IN2014DN08029A IN8029DEN2014A IN2014DN08029A IN 2014DN08029 A IN2014DN08029 A IN 2014DN08029A IN 8029DEN2014 A IN8029DEN2014 A IN 8029DEN2014A IN 2014DN08029 A IN2014DN08029 A IN 2014DN08029A
Authority
IN
India
Prior art keywords
thickness
circuit layer
metal layer
insulating substrate
layer
Prior art date
Application number
Other languages
English (en)
Inventor
Yoshiyuki Nagatomo
Nobuyuki Terasaki
Yoshirou Kuromitsu
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2014DN08029A publication Critical patent/IN2014DN08029A/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/012—Soldering with the use of hot gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0012—Brazing heat exchangers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/008—Soldering within a furnace
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023—Thermo-compression bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
    • B23K20/2333—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer one layer being aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/10—Aluminium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/18—Dissimilar materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/128—The active component for bonding being silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/54—Oxidising the surface before joining
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/60—Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
IN8029DEN2014 2012-03-30 2013-03-29 IN2014DN08029A (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012083246 2012-03-30
JP2013046960A JP2013229579A (ja) 2012-03-30 2013-03-08 パワーモジュール用基板、ヒートシンク付パワーモジュール用基板及びパワーモジュール
PCT/JP2013/059498 WO2013147142A1 (fr) 2012-03-30 2013-03-29 Substrat de module de puissance, substrat de module de puissance muni de dissipateur thermique, et module de puissance

Publications (1)

Publication Number Publication Date
IN2014DN08029A true IN2014DN08029A (fr) 2015-05-01

Family

ID=49260384

Family Applications (1)

Application Number Title Priority Date Filing Date
IN8029DEN2014 IN2014DN08029A (fr) 2012-03-30 2013-03-29

Country Status (8)

Country Link
US (1) US9480144B2 (fr)
EP (1) EP2833399B1 (fr)
JP (1) JP2013229579A (fr)
KR (1) KR102097177B1 (fr)
CN (1) CN104185900B (fr)
IN (1) IN2014DN08029A (fr)
TW (1) TWI591774B (fr)
WO (1) WO2013147142A1 (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6111764B2 (ja) * 2013-03-18 2017-04-12 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
JP5672324B2 (ja) 2013-03-18 2015-02-18 三菱マテリアル株式会社 接合体の製造方法及びパワーモジュール用基板の製造方法
US9969654B2 (en) * 2014-01-24 2018-05-15 United Technologies Corporation Method of bonding a metallic component to a non-metallic component using a compliant material
JP6384112B2 (ja) 2014-04-25 2018-09-05 三菱マテリアル株式会社 パワーモジュール用基板及びヒートシンク付パワーモジュール用基板
JP6299442B2 (ja) * 2014-06-03 2018-03-28 三菱マテリアル株式会社 パワーモジュール
DE102014211562A1 (de) * 2014-06-17 2015-12-17 Robert Bosch Gmbh Halbleiteranordnung mit einer Wärmesenke
JP5954371B2 (ja) 2014-08-05 2016-07-20 三菱マテリアル株式会社 パワーモジュール用基板及びその製造方法
JP6459427B2 (ja) * 2014-11-20 2019-01-30 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板の製造方法、及び、接合体、ヒートシンク付パワーモジュール用基板、ヒートシンク
CN104456247B (zh) * 2014-11-28 2017-09-05 宁波市柯玛士太阳能科技有限公司 一种条形灯
CN107004653B (zh) * 2015-01-26 2019-03-22 三菱电机株式会社 半导体装置以及半导体装置的制造方法
US10109555B2 (en) 2015-02-02 2018-10-23 Kabushiki Kaisha Toshiba Silicon nitride circuit board and electronic component module using the same
WO2016158020A1 (fr) 2015-04-01 2016-10-06 富士電機株式会社 Module à semi-conducteur
JP2017063127A (ja) * 2015-09-25 2017-03-30 三菱マテリアル株式会社 発光モジュール用基板、発光モジュール、冷却器付き発光モジュール用基板、および発光モジュール用基板の製造方法
CN205491580U (zh) * 2015-11-30 2016-08-17 比亚迪股份有限公司 Igbt散热模组以及具有其的igbt模组
CN115172290A (zh) * 2016-07-14 2022-10-11 株式会社东芝 陶瓷电路基板及半导体模块
JP6776953B2 (ja) 2017-03-07 2020-10-28 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板
KR102422070B1 (ko) * 2017-03-29 2022-07-15 미쓰비시 마테리알 가부시키가이샤 히트 싱크가 부착된 절연 회로 기판의 제조 방법
US11167363B2 (en) * 2017-05-10 2021-11-09 Board Of Trustees Of Michigan State University Brazing methods using porous interlayers and related articles
CN107819066B (zh) * 2017-10-26 2018-10-16 成都万士达瓷业有限公司 一种低氧铜烧结dbc半导体热电基片的生产方法
DE112018006382T5 (de) * 2017-12-13 2020-08-27 Mitsubishi Electric Corporation Halbleitereinheit und Verfahren zur Herstellung einer Halbleitereinheit
JP6911805B2 (ja) * 2018-03-27 2021-07-28 三菱マテリアル株式会社 ヒートシンク付き絶縁回路基板の製造方法
US11297745B2 (en) * 2018-03-28 2022-04-05 The Board Of Trustees Of The University Of Illinois Active thermal management system for electronic devices and method of achieving device-to-device isothermalization
JP7143659B2 (ja) * 2018-07-18 2022-09-29 三菱マテリアル株式会社 金属ベース基板
JP7167642B2 (ja) * 2018-11-08 2022-11-09 三菱マテリアル株式会社 接合体、ヒートシンク付絶縁回路基板、及び、ヒートシンク
CN112823073B (zh) * 2018-11-28 2022-07-05 三菱综合材料株式会社 接合体、带散热器的绝缘电路基板及散热器
CN111755413A (zh) * 2020-07-07 2020-10-09 深圳基本半导体有限公司 一种高导热率碳化硅器件封装结构及方法
CN114918572B (zh) * 2022-07-19 2022-11-04 北京理工大学 一种铝-铝的瞬态液相连接方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04162756A (ja) 1990-10-26 1992-06-08 Toshiba Corp 半導体モジュール
JP3171234B2 (ja) 1997-03-26 2001-05-28 三菱マテリアル株式会社 ヒートシンク付セラミック回路基板
JP4756200B2 (ja) 2000-09-04 2011-08-24 Ｄｏｗａメタルテック株式会社 金属セラミックス回路基板
JP2002203942A (ja) * 2000-12-28 2002-07-19 Fuji Electric Co Ltd パワー半導体モジュール
JP3676268B2 (ja) * 2001-08-01 2005-07-27 株式会社日立製作所 伝熱構造体及び半導体装置
JP2003197826A (ja) 2001-12-26 2003-07-11 Toshiba Corp セラミックス回路基板およびそれを用いた半導体モジュール
JP4206915B2 (ja) * 2002-12-27 2009-01-14 三菱マテリアル株式会社 パワーモジュール用基板
JP4496404B2 (ja) * 2003-10-10 2010-07-07 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板およびその製造方法
JP4918856B2 (ja) * 2004-04-05 2012-04-18 三菱マテリアル株式会社 パワーモジュール用基板及びパワーモジュール
JP2006253183A (ja) * 2005-03-08 2006-09-21 Hitachi Ltd 半導体パワーモジュール
JP4617209B2 (ja) 2005-07-07 2011-01-19 株式会社豊田自動織機 放熱装置
JP5061442B2 (ja) * 2005-09-15 2012-10-31 三菱マテリアル株式会社 絶縁回路基板および冷却シンク部付き絶縁回路基板
JP2007081200A (ja) * 2005-09-15 2007-03-29 Mitsubishi Materials Corp 冷却シンク部付き絶縁回路基板
JP2007180457A (ja) * 2005-12-28 2007-07-12 Toyota Industries Corp 半田付け方法及び半導体モジュールの製造方法並びに半田付け装置
JPWO2007105361A1 (ja) * 2006-03-08 2009-07-30 株式会社東芝 電子部品モジュール
JP4893096B2 (ja) 2006-05-01 2012-03-07 日立金属株式会社 回路基板およびこれを用いた半導体モジュール
JP4629016B2 (ja) * 2006-10-27 2011-02-09 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板およびヒートシンク付パワーモジュール用基板の製造方法並びにパワーモジュール
JP4978221B2 (ja) 2007-02-05 2012-07-18 三菱マテリアル株式会社 回路基板の製造装置及び製造方法、その製造方法に用いられるクッションシート
JP2008227336A (ja) 2007-03-15 2008-09-25 Hitachi Metals Ltd 半導体モジュール、これに用いられる回路基板
US8637777B2 (en) 2008-03-17 2014-01-28 Mitsubishi Materials Corporation Power module substrate having heatsink, method for manufacturing the same, power module having heatsink, and power module substrate
DE102008000825A1 (de) * 2008-03-26 2009-10-01 Robert Bosch Gmbh Keramik-Metall-Verbundsubstrat
JP4807378B2 (ja) 2008-05-16 2011-11-02 三菱マテリアル株式会社 パワーモジュール用基板、パワーモジュール及びパワーモジュール用基板の製造方法
JP4567773B2 (ja) * 2008-07-18 2010-10-20 三菱電機株式会社 電力用半導体装置
JP2010129867A (ja) 2008-11-28 2010-06-10 Mitsubishi Electric Corp 電力用半導体装置
JP5245989B2 (ja) 2009-03-31 2013-07-24 三菱マテリアル株式会社 パワーモジュール用基板の製造方法およびヒートシンク付パワーモジュール用基板の製造方法
EP2315242A1 (fr) * 2009-10-23 2011-04-27 ABB Technology AG Agencement de circuit et son procédé de fabrication
JP5577980B2 (ja) * 2010-09-16 2014-08-27 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板、パワーモジュール及びヒートシンク付パワーモジュール用基板の製造方法
JP3171234U (ja) 2011-08-09 2011-10-20 正宜 田辺 簡易温室
JP5218621B2 (ja) * 2011-10-28 2013-06-26 日立金属株式会社 回路基板およびこれを用いた半導体モジュール

Also Published As

Publication number Publication date
KR20140147090A (ko) 2014-12-29
CN104185900A (zh) 2014-12-03
EP2833399A4 (fr) 2015-12-30
US20150034367A1 (en) 2015-02-05
EP2833399B1 (fr) 2019-10-09
TWI591774B (zh) 2017-07-11
EP2833399A1 (fr) 2015-02-04
TW201405721A (zh) 2014-02-01
CN104185900B (zh) 2017-03-15
JP2013229579A (ja) 2013-11-07
KR102097177B1 (ko) 2020-04-03
WO2013147142A1 (fr) 2013-10-03
US9480144B2 (en) 2016-10-25

Similar Documents

Publication Publication Date Title
IN2014DN08029A (fr)
IN2014DN08073A (fr)
TW201613037A (en) Substrate for power modules, substrate with heat sink for power modules and power module with heat sink
WO2012015982A3 (fr) Substrat de circuits électroniques avec métal lié directement amélioré
IN2014DN08074A (fr)
PH12016500404A1 (en) Surface-treated metal material, metal foil with carrier, connector, terminal, laminate, shielding tape, shielding material, printed wiring board, processed metal member, electronic device, and method for manufacturing printed wiring board
IN2014DN08075A (fr)
WO2011097089A3 (fr) Substrats semi-conducteurs en creux
WO2011159417A3 (fr) Ensembles de matériau d'interface thermique, et procédés apparentés
MX2013013056A (es) Disco con un elemento de conexión eléctrica.
IN2012DN03163A (fr)
MY176763A (en) Carrier-attached copper foil, laminate, method for manufacturing printed- wiring board and method for manufacturing electronic device
MY186451A (en) Copper foil provided with carrier, laminate, printed wiring board, electronic device, and method for fabricating printed wiring board
MY184588A (en) Disk having an electrical connection element
EP3026144A4 (fr) Feuille de cuivre traitée en surface, feuille de cuivre comprenant un transporteur, substrat, substrat de résine, carte de circuit imprimé, stratifié plaqué cuivre, et procédé de production de carte de circuit imprimé
WO2009143835A3 (fr) Dispositif de transfert thermique permettant le refroidissement bilatéral d'un dispositif à semi-conducteur
WO2014184102A3 (fr) Procédé de dépôt de couches épaisses de cuivre sur des matériaux frittés
IN2012DN02839A (fr)
WO2015043969A3 (fr) Procédé de soudage par diffusion avec formation d'une zone de diffusion comme assemblage soudé et sous-ensemble électronique doté d'un tel assemblage soudé
TW201612461A (en) Heat dispersion structure and manufacturing method thereof
WO2009043670A3 (fr) Circuit électronique composé de sous-circuits et son procédé de fabrication
GB201214295D0 (en) Thermoelectric module and method for producing a thermoelectric module
WO2012085472A3 (fr) Circuit imprime a substrat metallique isole
WO2012099466A3 (fr) Procédé pour la fabrication d'un dispositif électronique par dépôt électrolytique à partir d'un liquide ionique
JP2015037174A5 (fr)