IL67248A - Amorphous silicon alloy photovoltaic device and its manufacture - Google Patents

Amorphous silicon alloy photovoltaic device and its manufacture

Info

Publication number
IL67248A
IL67248A IL67248A IL6724882A IL67248A IL 67248 A IL67248 A IL 67248A IL 67248 A IL67248 A IL 67248A IL 6724882 A IL6724882 A IL 6724882A IL 67248 A IL67248 A IL 67248A
Authority
IL
Israel
Prior art keywords
manufacture
amorphous silicon
photovoltaic device
silicon alloy
alloy photovoltaic
Prior art date
Application number
IL67248A
Other languages
English (en)
Other versions
IL67248A0 (en
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IL67248A0 publication Critical patent/IL67248A0/xx
Publication of IL67248A publication Critical patent/IL67248A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
IL67248A 1981-12-14 1982-11-12 Amorphous silicon alloy photovoltaic device and its manufacture IL67248A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/330,571 US4379943A (en) 1981-12-14 1981-12-14 Current enhanced photovoltaic device

Publications (2)

Publication Number Publication Date
IL67248A0 IL67248A0 (en) 1983-03-31
IL67248A true IL67248A (en) 1986-03-31

Family

ID=23290352

Family Applications (1)

Application Number Title Priority Date Filing Date
IL67248A IL67248A (en) 1981-12-14 1982-11-12 Amorphous silicon alloy photovoltaic device and its manufacture

Country Status (17)

Country Link
US (1) US4379943A (ja)
JP (2) JPS58145171A (ja)
AU (1) AU543910B2 (ja)
BR (1) BR8207108A (ja)
CA (1) CA1189601A (ja)
DE (1) DE3244626A1 (ja)
FR (1) FR2518318B1 (ja)
GB (1) GB2111303B (ja)
IE (1) IE54526B1 (ja)
IL (1) IL67248A (ja)
IN (1) IN156202B (ja)
IT (1) IT1153374B (ja)
MX (1) MX152173A (ja)
NL (1) NL8204754A (ja)
PH (1) PH19556A (ja)
SE (1) SE457125B (ja)
ZA (1) ZA828716B (ja)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
US4485125A (en) * 1982-03-19 1984-11-27 Energy Conversion Devices, Inc. Method for continuously producing tandem amorphous photovoltaic cells
US4521447A (en) * 1982-10-18 1985-06-04 Sovonics Solar Systems Method and apparatus for making layered amorphous semiconductor alloys using microwave energy
AU560521B2 (en) * 1982-10-18 1987-04-09 Energy Conversion Devices Inc. Layered amorphous semiconductor alloys
NL8204056A (nl) * 1982-10-21 1984-05-16 Oce Nederland Bv Fotogeleidend element voor toepassing in elektrofotografische kopieerprocessen.
JPH0614552B2 (ja) * 1983-02-02 1994-02-23 富士ゼロックス株式会社 光電変換素子の製造方法
JPS59143362A (ja) * 1983-02-03 1984-08-16 Fuji Xerox Co Ltd パツシベ−シヨン膜
GB2137810B (en) * 1983-03-08 1986-10-22 Agency Ind Science Techn A solar cell of amorphous silicon
US4471155A (en) * 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage
JPS59207620A (ja) * 1983-05-10 1984-11-24 Zenko Hirose アモルフアスシリコン成膜装置
ES534427A0 (es) * 1983-07-18 1985-11-01 Energy Conversion Devices Inc Una aleacion amorfa mejorada de separacion de bandas estrecha, para aplicaciones fotovoltaicas
US4782376A (en) * 1983-09-21 1988-11-01 General Electric Company Photovoltaic device with increased open circuit voltage
US4642144A (en) * 1983-10-06 1987-02-10 Exxon Research And Engineering Company Proximity doping of amorphous semiconductors
US4583492A (en) * 1983-12-19 1986-04-22 United Technologies Corporation High rate, low temperature silicon deposition system
JPS60155676A (ja) * 1984-01-24 1985-08-15 Canon Inc プラズマｃｖｄ装置
US4531015A (en) * 1984-04-12 1985-07-23 Atlantic Richfield Company PIN Amorphous silicon solar cell with nitrogen compensation
US4542256A (en) * 1984-04-27 1985-09-17 University Of Delaware Graded affinity photovoltaic cell
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
JPH0620147B2 (ja) * 1984-05-11 1994-03-16 三洋電機株式会社 光起電力装置
US4950614A (en) * 1984-05-15 1990-08-21 Semiconductor Energy Laboratory Co., Ltd. Method of making a tandem type semiconductor photoelectric conversion device
US4878097A (en) * 1984-05-15 1989-10-31 Eastman Kodak Company Semiconductor photoelectric conversion device and method for making same
US4547621A (en) * 1984-06-25 1985-10-15 Sovonics Solar Systems Stable photovoltaic devices and method of producing same
JPS6188570A (ja) * 1984-10-05 1986-05-06 Fuji Electric Co Ltd アモルフアスシリコン太陽電池の製造方法
JPS6191974A (ja) * 1984-10-11 1986-05-10 Kanegafuchi Chem Ind Co Ltd 耐熱性マルチジヤンクシヨン型半導体素子
DE8430810U1 (de) * 1984-10-19 1986-05-07 Siemens AG, 1000 Berlin und 8000 München Solarzelle mit graduellem Energiebandabstand mit einem aus amorphem Silizium bestehenden Halbleiterkorper
US4891087A (en) * 1984-10-22 1990-01-02 Texas Instruments Incorporated Isolation substrate ring for plasma reactor
US4616597A (en) * 1984-10-31 1986-10-14 Rca Corporation Apparatus for making a plasma coating
US4839709A (en) * 1985-07-12 1989-06-13 Hewlett-Packard Company Detector and mixer diode operative at zero bias voltage
JPS6249672A (ja) * 1985-08-29 1987-03-04 Sumitomo Electric Ind Ltd アモルフアス光起電力素子
JPS6273784A (ja) * 1985-09-27 1987-04-04 Sanyo Electric Co Ltd 光起電力装置
CA1321660C (en) * 1985-11-05 1993-08-24 Hideo Yamagishi Amorphous-containing semiconductor device with high resistivity interlayer or with highly doped interlayer
JPH0799777B2 (ja) * 1986-03-27 1995-10-25 住友電気工業株式会社 非晶質半導体素子
US4799968A (en) * 1986-09-26 1989-01-24 Sanyo Electric Co., Ltd. Photovoltaic device
US4710589A (en) * 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell
JP2575397B2 (ja) * 1987-07-29 1997-01-22 三井東圧化学株式会社 光電変換素子の製造方法
US4816082A (en) * 1987-08-19 1989-03-28 Energy Conversion Devices, Inc. Thin film solar cell including a spatially modulated intrinsic layer
US5275665A (en) * 1988-06-06 1994-01-04 Research Development Corporation Of Japan Method and apparatus for causing plasma reaction under atmospheric pressure
JP2717583B2 (ja) * 1988-11-04 1998-02-18 キヤノン株式会社 積層型光起電力素子
JPH0384966A (ja) * 1989-08-28 1991-04-10 Matsushita Electric Works Ltd 光電変換素子
US5155567A (en) * 1990-01-17 1992-10-13 Ricoh Company, Ltd. Amorphous photoconductive material and photosensor employing the photoconductive material
JP3099957B2 (ja) * 1990-01-17 2000-10-16 株式会社リコー 光導電部材
AU632241B2 (en) * 1990-09-06 1992-12-17 Mitsui Toatsu Chemicals Inc. Amorphous silicon solar cell and method for manufacturing the same
JP2999280B2 (ja) * 1991-02-22 2000-01-17 キヤノン株式会社 光起電力素子
US5256887A (en) * 1991-07-19 1993-10-26 Solarex Corporation Photovoltaic device including a boron doping profile in an i-type layer
US5221854A (en) * 1991-11-18 1993-06-22 United Solar Systems Corporation Protective layer for the back reflector of a photovoltaic device
US5204272A (en) * 1991-12-13 1993-04-20 United Solar Systems Corporation Semiconductor device and microwave process for its manufacture
FR2703797B1 (fr) * 1993-04-06 1995-06-23 Matra Mhs Procede et dispositif de controle de la teneur en bore de borophosphosilicate.
US6080644A (en) * 1998-02-06 2000-06-27 Burr-Brown Corporation Complementary bipolar/CMOS epitaxial structure and process
US20060211272A1 (en) * 2005-03-17 2006-09-21 The Regents Of The University Of California Architecture for high efficiency polymer photovoltaic cells using an optical spacer
US8791359B2 (en) * 2006-01-28 2014-07-29 Banpil Photonics, Inc. High efficiency photovoltaic cells
US8373060B2 (en) * 2006-10-24 2013-02-12 Zetta Research and Development LLC—AQT Series Semiconductor grain microstructures for photovoltaic cells
US8426722B2 (en) * 2006-10-24 2013-04-23 Zetta Research and Development LLC—AQT Series Semiconductor grain and oxide layer for photovoltaic cells
US8158880B1 (en) * 2007-01-17 2012-04-17 Aqt Solar, Inc. Thin-film photovoltaic structures including semiconductor grain and oxide layers
US20080173349A1 (en) * 2007-01-22 2008-07-24 United Solar Ovonic Llc Solar cells for stratospheric and outer space use
US20080257405A1 (en) * 2007-04-18 2008-10-23 Emcore Corp. Multijunction solar cell with strained-balanced quantum well middle cell
US20090272438A1 (en) * 2008-05-05 2009-11-05 Emcore Corporation Strain Balanced Multiple Quantum Well Subcell In Inverted Metamorphic Multijunction Solar Cell
CN102067333B (zh) * 2008-06-18 2013-10-30 东电电子太阳能股份公司 用于变换器面板的光伏电池的大规模制造方法以及光伏变换器面板
US7955890B2 (en) * 2008-06-24 2011-06-07 Applied Materials, Inc. Methods for forming an amorphous silicon film in display devices
US20100037937A1 (en) * 2008-08-15 2010-02-18 Sater Bernard L Photovoltaic cell with patterned contacts
US8293079B2 (en) * 2008-08-28 2012-10-23 Mh Solar Co., Ltd. Electrolysis via vertical multi-junction photovoltaic cell
US20100037943A1 (en) * 2008-08-14 2010-02-18 Sater Bernard L Vertical multijunction cell with textured surface
KR101028310B1 (ko) * 2009-06-30 2011-04-11 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US20110083724A1 (en) * 2009-10-08 2011-04-14 Ovshinsky Stanford R Monolithic Integration of Photovoltaic Cells
TW201123508A (en) * 2009-12-22 2011-07-01 Univ Nat Chiao Tung Antireflection layer, method for fabricating antireflection surface, and photovoltaic device applying the same
US20110186119A1 (en) * 2009-12-24 2011-08-04 Atwater Harry A Light-trapping plasmonic back reflector design for solar cells
US9608144B2 (en) 2011-06-01 2017-03-28 First Solar, Inc. Photovoltaic devices and method of making
US20120325305A1 (en) * 2011-06-21 2012-12-27 International Business Machines Corporation Ohmic contact between thin film solar cell and carbon-based transparent electrode
KR101770267B1 (ko) * 2011-10-04 2017-08-22 엘지전자 주식회사 박막 태양전지 모듈
FR2993087B1 (fr) * 2012-07-06 2014-06-27 Wysips Dispositif pour ameliorer la qualite d'une image recouverte d'un film photovoltaique semi-transparent
JP6564767B2 (ja) * 2014-04-11 2019-08-21 シャープ株式会社 光電変換装置
WO2016157979A1 (ja) * 2015-03-31 2016-10-06 株式会社カネカ 光電変換装置および光電変換モジュール
US10446704B2 (en) * 2015-12-30 2019-10-15 International Business Machines Corporation Formation of Ohmic back contact for Ag2ZnSn(S,Se)4 photovoltaic devices
CN111668324A (zh) * 2019-03-07 2020-09-15 苏州旭创科技有限公司 一种集成光栅反射结构的光探测器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342044A (en) * 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
DE2904171A1 (de) * 1979-02-05 1980-08-14 Siemens Ag Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung
JPS55125680A (en) 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
JPS5936836B2 (ja) * 1979-05-28 1984-09-06 シャープ株式会社 非晶質薄膜太陽電池
JPS561579A (en) * 1979-06-18 1981-01-09 Shunpei Yamazaki Semiconductor device
DE2938260A1 (de) * 1979-09-21 1981-03-26 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Halbleiterbauelement fuer die umsetzung von licht in elektrische energie
JPS5688377A (en) 1979-12-19 1981-07-17 Mitsubishi Electric Corp Solar battery and manufacture thereof
US4270018A (en) * 1979-12-26 1981-05-26 Gibbons James F Amorphous solar cells
JPS5694674A (en) * 1979-12-27 1981-07-31 Nec Corp Thin-film solar cell
JPS56116673A (en) * 1980-02-19 1981-09-12 Sharp Corp Amorphous thin film solar cell
KR890000479B1 (ko) * 1980-09-09 1989-03-18 에너지 컨버션 디바이시즈, 인코포레이리드 광응답 비정질 합금 제조방법 및 그 합금과 그로부터 만든 디바이스
US4490453A (en) * 1981-01-16 1984-12-25 Canon Kabushiki Kaisha Photoconductive member of a-silicon with nitrogen
US4379943A (en) * 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device

Also Published As

Publication number Publication date
DE3244626A1 (de) 1983-06-16
ZA828716B (en) 1983-10-26
GB2111303A (en) 1983-06-29
GB2111303B (en) 1985-07-03
FR2518318A1 (fr) 1983-06-17
AU543910B2 (en) 1985-05-09
DE3244626C2 (ja) 1989-09-28
SE8207034D0 (sv) 1982-12-09
JPH0434314B2 (ja) 1992-06-05
AU9145282A (en) 1983-06-23
BR8207108A (pt) 1983-10-11
CA1189601A (en) 1985-06-25
IT8224631A0 (it) 1982-12-06
MX152173A (es) 1985-06-04
IL67248A0 (en) 1983-03-31
IN156202B (ja) 1985-06-01
JPH06188440A (ja) 1994-07-08
IT1153374B (it) 1987-01-14
NL8204754A (nl) 1983-07-01
FR2518318B1 (fr) 1987-10-02
IE822913L (en) 1983-06-14
US4379943A (en) 1983-04-12
JPH07123169B2 (ja) 1995-12-25
SE457125B (sv) 1988-11-28
JPS58145171A (ja) 1983-08-29
PH19556A (en) 1986-05-21
SE8207034L (sv) 1983-06-15
IE54526B1 (en) 1989-11-08
IT8224631A1 (it) 1984-06-06

Similar Documents

Publication Publication Date Title
IL67248A (en) Amorphous silicon alloy photovoltaic device and its manufacture
EP0070509A3 (en) Amorphous semiconductor and amorphous silicon photovoltaic device
GB2114815B (en) Photovoltaic devices and manufacture thereof
GB2146173B (en) Photoelectric conversion device and manufacture thereof
GB2094550B (en) Amorphous semiconductor member
AU541974B2 (en) Photoresponsive amorphous alloys and devices
GB2113002B (en) Amorphous semiconductor solar battery electrode
DE3379565D1 (en) Photovoltaic device
GB2133214B (en) Photoelectric conversion device and its manufacturing method
GB2095031B (en) Amorphous semiconductor member
GB2260220B (en) An amorphous silicon solar cell and method of the solar cell manufacture
AU548001B2 (en) Pin amorphous silicon device and method
EP0077559A3 (en) Wafer transforming device
JPS57155344A (en) Amorphous alloy and manufacture
DE3173506D1 (en) Semiconductor device and its manufacture
GB2093271B (en) Fabricating amorphous silicon solar cells
GB2116775B (en) Photovoltaic device
GB2145560B (en) Amorphous silicon and polycrystalline silicon substrate
EP0099720A3 (en) Photovoltaic device
DE3271967D1 (en) Photoresponsive amorphous semiconductor alloys
IL66871A0 (en) Solar protection device
GB8405687D0 (en) Solar cell of amorphous silicon
DE3278058D1 (en) Power semiconductor device
AU548005B2 (en) Pin amorphous silicon photovoltaic device
DE3363961D1 (en) Memory device incorporating an amorphous or microcrystalline alloy