IL156119A0 - Hollow cathode target and methods of making same - Google Patents

Hollow cathode target and methods of making same

Info

Publication number
IL156119A0
IL156119A0 IL15611901A IL15611901A IL156119A0 IL 156119 A0 IL156119 A0 IL 156119A0 IL 15611901 A IL15611901 A IL 15611901A IL 15611901 A IL15611901 A IL 15611901A IL 156119 A0 IL156119 A0 IL 156119A0
Authority
IL
Israel
Prior art keywords
methods
making same
hollow cathode
cathode target
target
Prior art date
Application number
IL15611901A
Other languages
English (en)
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of IL156119A0 publication Critical patent/IL156119A0/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
IL15611901A 2000-11-27 2001-11-20 Hollow cathode target and methods of making same IL156119A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25311600P 2000-11-27 2000-11-27
US29541701P 2001-06-01 2001-06-01
PCT/US2001/043376 WO2002042513A2 (en) 2000-11-27 2001-11-20 Hollow cathode target and methods of making same

Publications (1)

Publication Number Publication Date
IL156119A0 true IL156119A0 (en) 2003-12-23

Family

ID=26942945

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15611901A IL156119A0 (en) 2000-11-27 2001-11-20 Hollow cathode target and methods of making same

Country Status (11)

Country Link
US (2) US6887356B2 (ru)
EP (1) EP1339894B1 (ru)
JP (1) JP4828782B2 (ru)
KR (1) KR100831543B1 (ru)
CN (1) CN1293229C (ru)
AU (1) AU2002236445A1 (ru)
IL (1) IL156119A0 (ru)
MX (1) MXPA03004635A (ru)
RU (1) RU2261288C2 (ru)
TW (1) TW573032B (ru)
WO (1) WO2002042513A2 (ru)

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KR100853743B1 (ko) * 2001-07-19 2008-08-25 허니웰 인터내셔널 인코포레이티드 스퍼터링 타겟, 스퍼터 리액터, 주조잉곳을 제조하는 방법및 금속제품을 제조하는 방법
EP1449935B1 (en) * 2001-11-26 2009-03-11 Nippon Mining & Metals Co., Ltd. Sputtering target and production method therefor
KR101024830B1 (ko) 2002-09-13 2011-03-29 토소우 에스엠디, 인크 균일한 증착을 증진하는 결정 방위를 갖는 비평탄 스퍼터타겟
US20040065546A1 (en) * 2002-10-04 2004-04-08 Michaluk Christopher A. Method to recover spent components of a sputter target
US7067197B2 (en) * 2003-01-07 2006-06-27 Cabot Corporation Powder metallurgy sputtering targets and methods of producing same
TW200506080A (en) * 2003-02-25 2005-02-16 Cabot Corp Method of forming sputtering target assembly and assemblies made therefrom
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US7228722B2 (en) * 2003-06-09 2007-06-12 Cabot Corporation Method of forming sputtering articles by multidirectional deformation
EP1639620A2 (en) * 2003-06-20 2006-03-29 Cabot Corporation Method and design for sputter target attachment to a backing plate
CN1823178B (zh) * 2003-09-12 2011-06-22 Jx日矿日石金属株式会社 溅射靶以及该溅射靶的表面精加工方法
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US20050252268A1 (en) * 2003-12-22 2005-11-17 Michaluk Christopher A High integrity sputtering target material and method for producing bulk quantities of same
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US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
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US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
US20070251819A1 (en) * 2006-05-01 2007-11-01 Kardokus Janine K Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
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CN102517550B (zh) * 2011-12-20 2014-07-09 宁波江丰电子材料有限公司 高纯钽靶材的制备方法和高纯钽靶材
US10118259B1 (en) 2012-12-11 2018-11-06 Ati Properties Llc Corrosion resistant bimetallic tube manufactured by a two-step process
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RU2548019C1 (ru) * 2013-11-28 2015-04-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный университет" Способ и устройство извлечения из цилиндрической мишени полученных в результате облучения целевых компонентов
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Also Published As

Publication number Publication date
US20050167015A1 (en) 2005-08-04
AU2002236445A1 (en) 2002-06-03
US20030019746A1 (en) 2003-01-30
JP4828782B2 (ja) 2011-11-30
RU2003119076A (ru) 2005-01-10
WO2002042513A2 (en) 2002-05-30
MXPA03004635A (es) 2004-05-17
EP1339894B1 (en) 2014-04-23
JP2004536958A (ja) 2004-12-09
EP1339894A2 (en) 2003-09-03
US6887356B2 (en) 2005-05-03
KR100831543B1 (ko) 2008-05-21
CN1293229C (zh) 2007-01-03
TW573032B (en) 2004-01-21
US7468110B2 (en) 2008-12-23
RU2261288C2 (ru) 2005-09-27
KR20030057557A (ko) 2003-07-04
WO2002042513A3 (en) 2003-06-05
CN1531605A (zh) 2004-09-22

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