AU2002236445A1 - Hollow cathode target and methods of making same - Google Patents

Hollow cathode target and methods of making same

Info

Publication number
AU2002236445A1
AU2002236445A1 AU2002236445A AU3644502A AU2002236445A1 AU 2002236445 A1 AU2002236445 A1 AU 2002236445A1 AU 2002236445 A AU2002236445 A AU 2002236445A AU 3644502 A AU3644502 A AU 3644502A AU 2002236445 A1 AU2002236445 A1 AU 2002236445A1
Authority
AU
Australia
Prior art keywords
methods
making same
hollow cathode
cathode target
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002236445A
Inventor
Robert B. Ford
Christopher A. Michaluk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Corp
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of AU2002236445A1 publication Critical patent/AU2002236445A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
AU2002236445A 2000-11-27 2001-11-20 Hollow cathode target and methods of making same Abandoned AU2002236445A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25311600P 2000-11-27 2000-11-27
US60/253,116 2000-11-27
US29541701P 2001-06-01 2001-06-01
US60/295,417 2001-06-01
PCT/US2001/043376 WO2002042513A2 (en) 2000-11-27 2001-11-20 Hollow cathode target and methods of making same

Publications (1)

Publication Number Publication Date
AU2002236445A1 true AU2002236445A1 (en) 2002-06-03

Family

ID=26942945

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002236445A Abandoned AU2002236445A1 (en) 2000-11-27 2001-11-20 Hollow cathode target and methods of making same

Country Status (11)

Country Link
US (2) US6887356B2 (en)
EP (1) EP1339894B1 (en)
JP (1) JP4828782B2 (en)
KR (1) KR100831543B1 (en)
CN (1) CN1293229C (en)
AU (1) AU2002236445A1 (en)
IL (1) IL156119A0 (en)
MX (1) MXPA03004635A (en)
RU (1) RU2261288C2 (en)
TW (1) TW573032B (en)
WO (1) WO2002042513A2 (en)

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US20040245099A1 (en) * 2001-11-26 2004-12-09 Atsushi Hukushima Sputtering target and production method therefor
US20060076234A1 (en) * 2002-09-13 2006-04-13 Tosoh Smd, Inc. Non-planar sputter targets having crystallographic orientations promoting uniform deposition
US20040065546A1 (en) * 2002-10-04 2004-04-08 Michaluk Christopher A. Method to recover spent components of a sputter target
TWI341337B (en) * 2003-01-07 2011-05-01 Cabot Corp Powder metallurgy sputtering targets and methods of producing same
US20040262157A1 (en) * 2003-02-25 2004-12-30 Ford Robert B. Method of forming sputtering target assembly and assemblies made therefrom
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US7228722B2 (en) * 2003-06-09 2007-06-12 Cabot Corporation Method of forming sputtering articles by multidirectional deformation
EP1639620A2 (en) * 2003-06-20 2006-03-29 Cabot Corporation Method and design for sputter target attachment to a backing plate
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US7788882B2 (en) * 2003-10-15 2010-09-07 Nippon Mining & Metals Co., Ltd. Packaging device and packaging method for hollow cathode type sputtering target
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
EP1704266A2 (en) * 2003-12-22 2006-09-27 Cabot Corporation High integrity sputtering target material and method for producing bulk quantities of same
US20050252268A1 (en) * 2003-12-22 2005-11-17 Michaluk Christopher A High integrity sputtering target material and method for producing bulk quantities of same
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JP2008531298A (en) * 2005-01-12 2008-08-14 ニュー・ヨーク・ユニヴァーシティ System and method for processing nanowires with holographic optical tweezers
US7998287B2 (en) * 2005-02-10 2011-08-16 Cabot Corporation Tantalum sputtering target and method of fabrication
US7708868B2 (en) * 2005-07-08 2010-05-04 Tosoh Smd, Inc. Variable thickness plate for forming variable wall thickness physical vapor deposition target
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
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US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8790499B2 (en) * 2005-11-25 2014-07-29 Applied Materials, Inc. Process kit components for titanium sputtering chamber
CN101374611B (en) * 2006-03-07 2015-04-08 卡伯特公司 Methods of producing deformed metal articles
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
US20070251819A1 (en) * 2006-05-01 2007-11-01 Kardokus Janine K Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
US7776166B2 (en) * 2006-12-05 2010-08-17 Praxair Technology, Inc. Texture and grain size controlled hollow cathode magnetron targets and method of manufacture
US7981262B2 (en) * 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) * 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
JP4874879B2 (en) * 2007-06-21 2012-02-15 Ｊｘ日鉱日石金属株式会社 Erbium sputtering target and manufacturing method thereof
US8702919B2 (en) * 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof
US20090084317A1 (en) * 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
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US20110300017A1 (en) * 2009-01-29 2011-12-08 Jx Nippon Mining & Metals Corporation Method for Manufacturing High-Purity Erbium, High-Purity Erbium, Sputtering Target Composed of High-Purity Erbium, and Metal Gate Film having High-Purity Erbium as Main Component
JP5144760B2 (en) * 2009-05-22 2013-02-13 Ｊｘ日鉱日石金属株式会社 Tantalum sputtering target
RU2454483C2 (en) * 2010-05-19 2012-06-27 Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН) Manufacturing method of cast target from tantalum-based alloy for magnetron sputtering
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US8869443B2 (en) 2011-03-02 2014-10-28 Ati Properties, Inc. Composite gun barrel with outer sleeve made from shape memory alloy to dampen firing vibrations
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US9771637B2 (en) 2014-12-09 2017-09-26 Ati Properties Llc Composite crucibles and methods of making and using the same
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CN111590279A (en) * 2020-06-03 2020-08-28 福建阿石创新材料股份有限公司 High-purity metal rotary target material and preparation method thereof
CN112808833B (en) * 2020-12-31 2023-01-10 有研科技集团有限公司 Method for preparing high-performance ferromagnetic target material
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Also Published As

Publication number Publication date
EP1339894B1 (en) 2014-04-23
IL156119A0 (en) 2003-12-23
RU2261288C2 (en) 2005-09-27
EP1339894A2 (en) 2003-09-03
CN1293229C (en) 2007-01-03
US20030019746A1 (en) 2003-01-30
RU2003119076A (en) 2005-01-10
JP4828782B2 (en) 2011-11-30
US7468110B2 (en) 2008-12-23
WO2002042513A3 (en) 2003-06-05
KR100831543B1 (en) 2008-05-21
JP2004536958A (en) 2004-12-09
MXPA03004635A (en) 2004-05-17
CN1531605A (en) 2004-09-22
TW573032B (en) 2004-01-21
KR20030057557A (en) 2003-07-04
US6887356B2 (en) 2005-05-03
WO2002042513A2 (en) 2002-05-30
US20050167015A1 (en) 2005-08-04

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