IL146269A0 - Fet with notched gate - Google Patents
Fet with notched gateInfo
- Publication number
- IL146269A0 IL146269A0 IL14626901A IL14626901A IL146269A0 IL 146269 A0 IL146269 A0 IL 146269A0 IL 14626901 A IL14626901 A IL 14626901A IL 14626901 A IL14626901 A IL 14626901A IL 146269 A0 IL146269 A0 IL 146269A0
- Authority
- IL
- Israel
- Prior art keywords
- fet
- notched gate
- notched
- gate
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/2807—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
- H01L29/4991—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material comprising an air gap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/713,830 US6891235B1 (en) | 2000-11-15 | 2000-11-15 | FET with T-shaped gate |
Publications (1)
Publication Number | Publication Date |
---|---|
IL146269A0 true IL146269A0 (en) | 2002-07-25 |
Family
ID=24867706
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL14626901A IL146269A0 (en) | 2000-11-15 | 2001-10-31 | Fet with notched gate |
IL15591201A IL155912A0 (en) | 2000-11-15 | 2001-11-13 | Fet with notched gate |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL15591201A IL155912A0 (en) | 2000-11-15 | 2001-11-13 | Fet with notched gate |
Country Status (9)
Country | Link |
---|---|
US (2) | US6891235B1 (xx) |
EP (1) | EP1334512A1 (xx) |
JP (1) | JP4391745B2 (xx) |
KR (1) | KR100550751B1 (xx) |
CN (1) | CN1276487C (xx) |
AU (1) | AU2002215102A1 (xx) |
IL (2) | IL146269A0 (xx) |
TW (1) | TW522563B (xx) |
WO (1) | WO2002041383A1 (xx) |
Families Citing this family (59)
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DE10114778A1 (de) * | 2001-03-26 | 2002-10-17 | Infineon Technologies Ag | Verfahren zur Herstellung eines MOSFETs mit sehr kleiner Kanallänge |
KR100398874B1 (ko) * | 2001-11-21 | 2003-09-19 | 삼성전자주식회사 | 티자형의 게이트 전극을 갖는 모스 트랜지스터 및 그 제조방법 |
US7151292B1 (en) * | 2003-01-15 | 2006-12-19 | Spansion Llc | Dielectric memory cell structure with counter doped channel region |
US6905976B2 (en) | 2003-05-06 | 2005-06-14 | International Business Machines Corporation | Structure and method of forming a notched gate field effect transistor |
KR20050011092A (ko) * | 2003-07-21 | 2005-01-29 | 매그나칩 반도체 유한회사 | T-형 트랜지스터 게이트 제조방법 |
US7501669B2 (en) | 2003-09-09 | 2009-03-10 | Cree, Inc. | Wide bandgap transistor devices with field plates |
ATE455366T1 (de) | 2003-10-17 | 2010-01-15 | Imec | Verfahren zur herstellung eines halbleitersubstrats mit einer schichtstruktur von aktivierten dotierungsstoffen |
CN1295755C (zh) * | 2003-10-27 | 2007-01-17 | 上海宏力半导体制造有限公司 | 一种形成凹槽栅极结构的方法 |
US6885072B1 (en) * | 2003-11-18 | 2005-04-26 | Applied Intellectual Properties Co., Ltd. | Nonvolatile memory with undercut trapping structure |
US6852584B1 (en) * | 2004-01-14 | 2005-02-08 | Tokyo Electron Limited | Method of trimming a gate electrode structure |
US20050199872A1 (en) * | 2004-03-10 | 2005-09-15 | Tokyo Electron Limited Of Tbs Broadcast Center | Silicon-germanium thin layer semiconductor structure with variable silicon-germanium composition and method of fabrication |
US7105430B2 (en) * | 2004-03-26 | 2006-09-12 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device having a notched control electrode and structure thereof |
US7550783B2 (en) * | 2004-05-11 | 2009-06-23 | Cree, Inc. | Wide bandgap HEMTs with source connected field plates |
US7573078B2 (en) * | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
US9773877B2 (en) * | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
JP2006086467A (ja) * | 2004-09-17 | 2006-03-30 | Toshiba Corp | 半導体装置及びその製造方法 |
US11791385B2 (en) | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
JP2007042802A (ja) * | 2005-08-02 | 2007-02-15 | Toshiba Corp | 電界効果トランジスタ及びその製造方法 |
US7776725B2 (en) * | 2005-09-12 | 2010-08-17 | International Business Machines Corporation | Anti-halo compensation |
US7456058B1 (en) * | 2005-09-21 | 2008-11-25 | Advanced Micro Devices, Inc. | Stressed MOS device and methods for its fabrication |
US7344933B2 (en) * | 2006-01-03 | 2008-03-18 | Freescale Semiconductor, Inc. | Method of forming device having a raised extension region |
EP1921669B1 (en) * | 2006-11-13 | 2015-09-02 | Cree, Inc. | GaN based HEMTs with buried field plates |
JP2009021439A (ja) * | 2007-07-12 | 2009-01-29 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
KR101263648B1 (ko) * | 2007-08-31 | 2013-05-21 | 삼성전자주식회사 | 핀 전계 효과 트랜지스터 및 그 제조 방법. |
US7883976B2 (en) * | 2007-12-13 | 2011-02-08 | International Business Machines Corporation | Structure and method for manufacturing device with planar halo profile |
US7666746B2 (en) * | 2008-01-14 | 2010-02-23 | International Business Machines Corporation | Semiconductor transistors having high-K gate dielectric layers, metal gate electrode regions, and low fringing capacitances |
US20090212332A1 (en) * | 2008-02-21 | 2009-08-27 | International Business Machines Corporation | Field effect transistor with reduced overlap capacitance |
WO2010023608A2 (en) * | 2008-08-25 | 2010-03-04 | Nxp B.V. | Low cost mos transistor for rf applications |
TWI383505B (zh) * | 2008-11-28 | 2013-01-21 | Chunghwa Picture Tubes Ltd | 薄膜電晶體及其製造方法 |
US8168538B2 (en) * | 2009-05-26 | 2012-05-01 | Macronix International Co., Ltd. | Buried silicide structure and method for making |
US8164146B2 (en) * | 2009-09-23 | 2012-04-24 | Macronix International Co., Ltd. | Substrate symmetrical silicide source/drain surrounding gate transistor |
US9048254B2 (en) | 2009-12-02 | 2015-06-02 | United Microelectronics Corp. | Semiconductor structure having a metal gate with side wall spacers |
US8847232B2 (en) * | 2011-01-07 | 2014-09-30 | Eastman Kodak Company | Transistor including reduced channel length |
JP2013105891A (ja) * | 2011-11-14 | 2013-05-30 | Toshiba Corp | 半導体装置およびその製造方法 |
KR101900042B1 (ko) | 2012-05-10 | 2018-09-18 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
CN103578944B (zh) * | 2012-07-18 | 2016-08-03 | 中国科学院微电子研究所 | 半导体器件制造方法 |
US20140103452A1 (en) * | 2012-10-15 | 2014-04-17 | Marvell World Trade Ltd. | Isolation components for transistors formed on fin features of semiconductor substrates |
KR101923959B1 (ko) * | 2012-12-11 | 2018-12-03 | 한국전자통신연구원 | 트랜지스터 및 그 제조 방법 |
KR20140094917A (ko) | 2013-01-23 | 2014-07-31 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
KR102037374B1 (ko) * | 2013-03-27 | 2019-10-29 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
CN103325671A (zh) * | 2013-05-25 | 2013-09-25 | 复旦大学 | 一种在半导体表面制造t形栅极的方法 |
US9847411B2 (en) | 2013-06-09 | 2017-12-19 | Cree, Inc. | Recessed field plate transistor structures |
US9679981B2 (en) | 2013-06-09 | 2017-06-13 | Cree, Inc. | Cascode structures for GaN HEMTs |
US9755059B2 (en) | 2013-06-09 | 2017-09-05 | Cree, Inc. | Cascode structures with GaN cap layers |
KR102167625B1 (ko) * | 2013-10-24 | 2020-10-19 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
CN106033730A (zh) * | 2015-03-17 | 2016-10-19 | 中芯国际集成电路制造(上海)有限公司 | 晶体管的形成方法 |
US9768261B2 (en) * | 2015-04-17 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and method of forming the same |
CN106531794B (zh) * | 2015-09-15 | 2021-02-09 | 联华电子股份有限公司 | 高压金属氧化物半导体晶体管元件及其制造方法 |
US9508810B1 (en) * | 2015-11-16 | 2016-11-29 | International Business Machines Corporation | FET with air gap spacer for improved overlap capacitance |
US9443982B1 (en) * | 2016-02-08 | 2016-09-13 | International Business Machines Corporation | Vertical transistor with air gap spacers |
US10446662B2 (en) * | 2016-10-07 | 2019-10-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reducing metal gate overhang by forming a top-wide bottom-narrow dummy gate electrode |
US10340352B2 (en) | 2017-03-14 | 2019-07-02 | Globalfoundries Inc. | Field-effect transistors with a T-shaped gate electrode |
US10840153B2 (en) * | 2018-06-27 | 2020-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Notched gate structure fabrication |
US10832962B1 (en) | 2019-05-22 | 2020-11-10 | International Business Machines Corporation | Formation of an air gap spacer using sacrificial spacer layer |
US11217680B2 (en) | 2019-05-23 | 2022-01-04 | International Business Machines Corporation | Vertical field-effect transistor with T-shaped gate |
US11127831B2 (en) | 2019-09-24 | 2021-09-21 | Globalfoundries U.S. Inc. | Transistor structure with overlying gate on polysilicon gate structure and related method |
KR20220158340A (ko) * | 2021-05-24 | 2022-12-01 | 삼성전자주식회사 | 게이트 구조체를 갖는 반도체 소자들 및 그 형성 방법 |
US11881506B2 (en) | 2021-07-27 | 2024-01-23 | Globalfoundries U.S. Inc. | Gate structures with air gap isolation features |
CN115910786A (zh) * | 2021-09-30 | 2023-04-04 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
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-
2000
- 2000-11-15 US US09/713,830 patent/US6891235B1/en not_active Expired - Lifetime
-
2001
- 2001-10-31 IL IL14626901A patent/IL146269A0/xx not_active IP Right Cessation
- 2001-11-12 TW TW090128006A patent/TW522563B/zh not_active IP Right Cessation
- 2001-11-13 AU AU2002215102A patent/AU2002215102A1/en not_active Abandoned
- 2001-11-13 KR KR1020037006289A patent/KR100550751B1/ko not_active IP Right Cessation
- 2001-11-13 JP JP2002543688A patent/JP4391745B2/ja not_active Expired - Fee Related
- 2001-11-13 WO PCT/GB2001/005015 patent/WO2002041383A1/en active IP Right Grant
- 2001-11-13 CN CNB018188907A patent/CN1276487C/zh not_active Expired - Fee Related
- 2001-11-13 EP EP01983677A patent/EP1334512A1/en not_active Withdrawn
- 2001-11-13 IL IL15591201A patent/IL155912A0/xx unknown
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2004
- 2004-12-07 US US11/005,659 patent/US7282423B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7282423B2 (en) | 2007-10-16 |
JP4391745B2 (ja) | 2009-12-24 |
CN1276487C (zh) | 2006-09-20 |
CN1475031A (zh) | 2004-02-11 |
TW522563B (en) | 2003-03-01 |
US20050104139A1 (en) | 2005-05-19 |
KR20030048131A (ko) | 2003-06-18 |
JP2004514290A (ja) | 2004-05-13 |
AU2002215102A1 (en) | 2002-05-27 |
WO2002041383A1 (en) | 2002-05-23 |
EP1334512A1 (en) | 2003-08-13 |
IL155912A0 (en) | 2003-12-23 |
US6891235B1 (en) | 2005-05-10 |
KR100550751B1 (ko) | 2006-02-08 |
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