IL138483A0 - Chemical mechanical polishing slurry useful for copper substrates - Google Patents

Chemical mechanical polishing slurry useful for copper substrates

Info

Publication number
IL138483A0
IL138483A0 IL13848399A IL13848399A IL138483A0 IL 138483 A0 IL138483 A0 IL 138483A0 IL 13848399 A IL13848399 A IL 13848399A IL 13848399 A IL13848399 A IL 13848399A IL 138483 A0 IL138483 A0 IL 138483A0
Authority
IL
Israel
Prior art keywords
mechanical polishing
chemical mechanical
polishing slurry
copper substrates
slurry useful
Prior art date
Application number
IL13848399A
Other languages
English (en)
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of IL138483A0 publication Critical patent/IL138483A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
IL13848399A 1998-03-18 1999-03-18 Chemical mechanical polishing slurry useful for copper substrates IL138483A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/040,630 US6432828B2 (en) 1998-03-18 1998-03-18 Chemical mechanical polishing slurry useful for copper substrates
PCT/US1999/005968 WO1999047618A1 (en) 1998-03-18 1999-03-18 Chemical mechanical polishing slurry useful for copper substrates

Publications (1)

Publication Number Publication Date
IL138483A0 true IL138483A0 (en) 2001-10-31

Family

ID=21912052

Family Applications (1)

Application Number Title Priority Date Filing Date
IL13848399A IL138483A0 (en) 1998-03-18 1999-03-18 Chemical mechanical polishing slurry useful for copper substrates

Country Status (12)

Country Link
US (3) US6432828B2 (xx)
EP (1) EP1064338B1 (xx)
JP (3) JP2002506915A (xx)
KR (1) KR100594561B1 (xx)
CN (1) CN1157450C (xx)
AU (1) AU3100499A (xx)
CA (1) CA2324151A1 (xx)
DE (1) DE69933015T2 (xx)
ID (1) ID27122A (xx)
IL (1) IL138483A0 (xx)
TW (1) TWI256966B (xx)
WO (1) WO1999047618A1 (xx)

Families Citing this family (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP4608925B2 (ja) * 1998-12-25 2011-01-12 日立化成工業株式会社 Ｃｍｐ研磨剤用添加液
DE19927286B4 (de) * 1999-06-15 2011-07-28 Qimonda AG, 81739 Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche
US6419554B2 (en) * 1999-06-24 2002-07-16 Micron Technology, Inc. Fixed abrasive chemical-mechanical planarization of titanium nitride
IL147235A0 (en) 1999-08-13 2002-08-14 Cabot Microelectronics Corp Chemical mechanical polishing systems and methods for their use
TWI254070B (en) * 1999-08-18 2006-05-01 Jsr Corp Aqueous dispersion for chemical mechanical polishing
US6347978B1 (en) 1999-10-22 2002-02-19 Cabot Microelectronics Corporation Composition and method for polishing rigid disks
JP2001187877A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
JP3602393B2 (ja) * 1999-12-28 2004-12-15 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US6443811B1 (en) * 2000-06-20 2002-09-03 Infineon Technologies Ag Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing
US7153410B2 (en) * 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces
US7134934B2 (en) * 2000-08-30 2006-11-14 Micron Technology, Inc. Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
US7160176B2 (en) 2000-08-30 2007-01-09 Micron Technology, Inc. Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
US7192335B2 (en) * 2002-08-29 2007-03-20 Micron Technology, Inc. Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates
US7220166B2 (en) * 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US7153195B2 (en) * 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US7078308B2 (en) 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US7094131B2 (en) * 2000-08-30 2006-08-22 Micron Technology, Inc. Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material
US7129160B2 (en) * 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US7074113B1 (en) 2000-08-30 2006-07-11 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US7112121B2 (en) * 2000-08-30 2006-09-26 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
KR100370160B1 (ko) * 2000-10-27 2003-01-30 주식회사 하이닉스반도체 반도체 소자의 텅스텐 플러그 형성방법
DE10060343A1 (de) * 2000-12-04 2002-06-06 Bayer Ag Polierslurry für das chemisch-mechanische Polieren von Metall- und Dielektrikastrukturen
US6540935B2 (en) * 2001-04-05 2003-04-01 Samsung Electronics Co., Ltd. Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same
US6632259B2 (en) * 2001-05-18 2003-10-14 Rodel Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US6783432B2 (en) * 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
US20040011991A1 (en) * 2001-06-13 2004-01-22 Markle Richard J. Use of a gettering agent in a chemical mechanical polishing and rinsing operation and apparatus therefor
US6627546B2 (en) * 2001-06-29 2003-09-30 Ashland Inc. Process for removing contaminant from a surface and composition useful therefor
US6589099B2 (en) * 2001-07-09 2003-07-08 Motorola, Inc. Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry
TW591089B (en) * 2001-08-09 2004-06-11 Cheil Ind Inc Slurry composition for use in chemical mechanical polishing of metal wiring
US6953389B2 (en) * 2001-08-09 2005-10-11 Cheil Industries, Inc. Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching
DE60225171T2 (de) * 2001-10-26 2008-06-05 AGC Seimi Chemical Co., Ltd., Chigasaki-shi Poliermasse, verfahren zu deren herstellung und polierverfahren
JPWO2003038883A1 (ja) * 2001-10-31 2005-02-24 日立化成工業株式会社 研磨液及び研磨方法
KR100442962B1 (ko) * 2001-12-26 2004-08-04 주식회사 하이닉스반도체 반도체소자의 금속배선 콘택플러그 형성방법
US7025659B2 (en) 2002-01-14 2006-04-11 Hitachi Global Storage Technologies Netherlands B.V. Simultaneous planarization of pole piece and coil materials for write head applications
TWI282360B (en) * 2002-06-03 2007-06-11 Hitachi Chemical Co Ltd Polishing composition and polishing method thereof
US6858531B1 (en) * 2002-07-12 2005-02-22 Lsi Logic Corporation Electro chemical mechanical polishing method
JP4083502B2 (ja) * 2002-08-19 2008-04-30 株式会社フジミインコーポレーテッド 研磨方法及びそれに用いられる研磨用組成物
JP3981616B2 (ja) * 2002-10-02 2007-09-26 株式会社フジミインコーポレーテッド 研磨用組成物
US20040074517A1 (en) * 2002-10-22 2004-04-22 Texas Instruments Incorporated Surfactants for chemical mechanical polishing
US6899597B2 (en) * 2003-01-29 2005-05-31 Infineon Technologies Ag Chemical mechanical polishing (CMP) process using fixed abrasive pads
WO2004090937A2 (en) * 2003-04-10 2004-10-21 Technion Research & Development Foundation Ltd Copper cmp slurry composition
US20040259366A1 (en) * 2003-06-20 2004-12-23 Kim Seong Han Method and composition for the chemical-vibrational-mechanical planarization of copper
KR101072342B1 (ko) * 2003-06-30 2011-10-11 동우 화인켐 주식회사 구리의 화학적 기계적 연마를 위한 슬러리 조성물
US7112122B2 (en) * 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
ATE463838T1 (de) * 2003-09-30 2010-04-15 Fujimi Inc Polierzusammensetzung und polierverfahren
US20050085163A1 (en) * 2003-10-16 2005-04-21 United Microelectronics Corp. Method for preventing edge peeling defect
US20060172526A1 (en) * 2003-10-16 2006-08-03 United Microelectronics Corp. Method for preventing edge peeling defect
US20050136671A1 (en) * 2003-12-22 2005-06-23 Goldberg Wendy B. Compositions and methods for low downforce pressure polishing of copper
US7153777B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
JP2005268664A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP2005268666A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
JP4316406B2 (ja) * 2004-03-22 2009-08-19 株式会社フジミインコーポレーテッド 研磨用組成物
JP4644434B2 (ja) * 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
US20050211950A1 (en) * 2004-03-24 2005-09-29 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
US7497967B2 (en) * 2004-03-24 2009-03-03 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions and methods for polishing copper
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US20050279964A1 (en) * 2004-06-17 2005-12-22 Ming-Tseh Tsay Chemical mechanical polishing slurry for polishing copper layer on a wafer
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7303993B2 (en) * 2004-07-01 2007-12-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto
US7566391B2 (en) * 2004-09-01 2009-07-28 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
JP2006086462A (ja) * 2004-09-17 2006-03-30 Fujimi Inc 研磨用組成物およびそれを用いた配線構造体の製造法
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
JP2006135072A (ja) * 2004-11-05 2006-05-25 Fujimi Inc 研磨方法
US7435356B2 (en) * 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
US7086935B2 (en) * 2004-11-24 2006-08-08 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cellulose-containing polishing compositions and methods relating thereto
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
JP4469737B2 (ja) * 2005-02-10 2010-05-26 株式会社東芝 半導体装置の製造方法
CN1854234B (zh) 2005-04-21 2013-03-20 安集微电子（上海）有限公司 抛光浆料及其用途和使用方法
JP2006339594A (ja) * 2005-06-06 2006-12-14 Seimi Chem Co Ltd 半導体用研磨剤
US7718536B2 (en) * 2005-06-16 2010-05-18 United Microelectronics Corp. Planarization process for pre-damascene structure including metal hard mask
DE112006002323T5 (de) * 2005-09-02 2008-07-10 Fujimi Incorporated, Kiyosu Poliermittel
JP5026710B2 (ja) * 2005-09-02 2012-09-19 株式会社フジミインコーポレーテッド 研磨用組成物
US7435162B2 (en) * 2005-10-24 2008-10-14 3M Innovative Properties Company Polishing fluids and methods for CMP
US20070179072A1 (en) * 2006-01-30 2007-08-02 Rao Madhukar B Cleaning formulations
SG139699A1 (en) * 2006-08-02 2008-02-29 Fujimi Inc Polishing composition and polishing process
US20080029126A1 (en) * 2006-08-07 2008-02-07 Thomas Terence M Compositions and methods for improved planarization of copper utilizing inorganic oxide abrasive
US8057561B2 (en) * 2006-09-11 2011-11-15 Cabot Microelectronics Corporation Polyoxometalate compositions and methods
KR101050136B1 (ko) * 2006-11-20 2011-07-19 주식회사 엘지화학 유기용매를 이용한 산화세륨 분말의 제조방법 및 상기분말을 포함하는ｃｍｐ슬러리
JP2009164186A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
JP2009164188A (ja) * 2007-12-28 2009-07-23 Fujimi Inc 研磨用組成物
US7922926B2 (en) 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
CN101235255B (zh) * 2008-03-07 2011-08-24 大连理工大学 一种化学机械抛光半导体晶片用的抛光液
JP5819036B2 (ja) * 2008-03-25 2015-11-18 三井金属鉱業株式会社 セリウム系研摩材スラリー
CN101302403B (zh) * 2008-07-03 2011-10-19 大连理工大学 用于大尺寸金刚石晶圆超精密低损伤抛光的抛光液及制备方法
US8506661B2 (en) * 2008-10-24 2013-08-13 Air Products & Chemicals, Inc. Polishing slurry for copper films
WO2010071873A2 (en) * 2008-12-20 2010-06-24 Cabot Microelectronics Corporation Wiresaw cutting method
TWI371481B (en) * 2009-04-02 2012-09-01 Uwiz Technology Co Ltd Slurry composition and method of fabricating damascene structure using the same
US8551887B2 (en) 2009-12-22 2013-10-08 Air Products And Chemicals, Inc. Method for chemical mechanical planarization of a copper-containing substrate
JP5587620B2 (ja) * 2010-01-25 2014-09-10 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
CN102373014A (zh) * 2010-08-24 2012-03-14 安集微电子（上海）有限公司 一种化学机械抛光液
JP2012121086A (ja) * 2010-12-07 2012-06-28 Yokkaichi Chem Co Ltd 研磨用添加剤及び高分散性研磨スラリー
CN102559057A (zh) * 2010-12-16 2012-07-11 安集微电子（上海）有限公司 一种含有机酸性物质的化学机械抛光液
CN102533122B (zh) * 2010-12-28 2016-01-20 安集微电子（上海）有限公司 一种用于抛光含钛基材的抛光浆料
TWI605112B (zh) 2011-02-21 2017-11-11 Fujimi Inc 研磨用組成物
US8980122B2 (en) 2011-07-08 2015-03-17 General Engineering & Research, L.L.C. Contact release capsule useful for chemical mechanical planarization slurry
US9567678B2 (en) 2011-08-29 2017-02-14 Massachusetts Institute Of Technology Methods and systems for carrying out a pH-influenced chemical and/or biological reaction
WO2013033173A1 (en) 2011-08-29 2013-03-07 Massachusetts Institute Of Technology METHODS AND SYSTEMS FOR CARRYING OUT A pH-INFLUENCED CHEMICAL AND/OR BIOLOGICAL REACTION
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
US9752057B2 (en) * 2014-02-05 2017-09-05 Cabot Microelectronics Corporation CMP method for suppression of titanium nitride and titanium/titanium nitride removal
CN105320782B (zh) * 2014-06-16 2019-06-21 复旦大学 一种考虑抛光液影响的特征尺寸级化学机械抛光工艺仿真方法
WO2016054519A1 (en) * 2014-10-03 2016-04-07 Massachusetts Institute Of Technology Methods and systems for carrying out a ph-influenced chemical and/or biological reaction
CN104312441B (zh) * 2014-10-29 2017-11-10 安阳方圆研磨材料有限责任公司 硅铈抛光液及其制备方法
JP7057662B2 (ja) * 2017-12-26 2022-04-20 ニッタ・デュポン株式会社 研磨組成物、及び、研磨速度を調整する方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3385682A (en) 1965-04-29 1968-05-28 Sprague Electric Co Method and reagent for surface polishing
GB1198312A (en) 1967-07-22 1970-07-08 Geigy Uk Ltd Corrosion Inhibiting Chemical Compositions
JPS49109223A (xx) 1973-02-21 1974-10-17
SE400581B (sv) 1974-12-13 1978-04-03 Nordnero Ab Bad for kemisk polering av koppar och dess legeringar
DE2847267C2 (de) 1978-10-31 1993-12-23 Decker Gmbh & Co Kg Geb Stabilisator für eine wäßrige Lösung zum Beizen und/oder chemischen Glänzen von Gegenständen aus Kupfer oder Kupferlegierungen in einem mehrstufigen Verfahren und Verwendung des Stabilisators
US4671851A (en) 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4789648A (en) 1985-10-28 1988-12-06 International Business Machines Corporation Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
US4956313A (en) 1987-08-17 1990-09-11 International Business Machines Corporation Via-filling and planarization technique
US4910155A (en) 1988-10-28 1990-03-20 International Business Machines Corporation Wafer flood polishing
US5244523A (en) 1990-02-07 1993-09-14 Tollini Dennis R Bandage for replaceable dressing and method of fabrication thereof
US5157876A (en) 1990-04-10 1992-10-27 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US5137544A (en) 1990-04-10 1992-08-11 Rockwell International Corporation Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing
US5225034A (en) 1992-06-04 1993-07-06 Micron Technology, Inc. Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing
US5209816A (en) 1992-06-04 1993-05-11 Micron Technology, Inc. Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing
US5575837A (en) * 1993-04-28 1996-11-19 Fujimi Incorporated Polishing composition
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5407526A (en) 1993-06-30 1995-04-18 Intel Corporation Chemical mechanical polishing slurry delivery and mixing system
US5340370A (en) 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
JP3397501B2 (ja) 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5478435A (en) 1994-12-16 1995-12-26 National Semiconductor Corp. Point of use slurry dispensing system
US6046110A (en) * 1995-06-08 2000-04-04 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing a semiconductor device
US5700383A (en) 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US5858813A (en) 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5993686A (en) * 1996-06-06 1999-11-30 Cabot Corporation Fluoride additive containing chemical mechanical polishing slurry and method for use of same
EP0852615B1 (en) * 1996-07-25 2005-12-14 DuPont Air Products NanoMaterials L.L.C. Chemical mechanical polishing composition and process
JP3507628B2 (ja) * 1996-08-06 2004-03-15 昭和電工株式会社 化学的機械研磨用研磨組成物
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US6039891A (en) * 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US6033596A (en) * 1996-09-24 2000-03-07 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US6068787A (en) * 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US5958288A (en) * 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6309560B1 (en) 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5735963A (en) 1996-12-17 1998-04-07 Lucent Technologies Inc. Method of polishing
US5922091A (en) 1997-05-16 1999-07-13 National Science Council Of Republic Of China Chemical mechanical polishing slurry for metallic thin film
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6063306A (en) 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate

Also Published As

Publication number Publication date
KR20010041962A (ko) 2001-05-25
ID27122A (id) 2001-03-01
WO1999047618A1 (en) 1999-09-23
KR100594561B1 (ko) 2006-06-30
EP1064338B1 (en) 2006-08-30
JP2007150341A (ja) 2007-06-14
US20040009671A1 (en) 2004-01-15
DE69933015D1 (de) 2006-10-12
CN1157450C (zh) 2004-07-14
TWI256966B (en) 2006-06-21
JP2002506915A (ja) 2002-03-05
US6432828B2 (en) 2002-08-13
AU3100499A (en) 1999-10-11
US6620037B2 (en) 2003-09-16
US20010049910A1 (en) 2001-12-13
US20020168923A1 (en) 2002-11-14
JP2012004588A (ja) 2012-01-05
EP1064338A1 (en) 2001-01-03
US7381648B2 (en) 2008-06-03
JP5539934B2 (ja) 2014-07-02
CN1301288A (zh) 2001-06-27
CA2324151A1 (en) 1999-09-23
DE69933015T2 (de) 2006-12-14

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