JP2007150341A - 銅基材に有益な化学機械的研磨スラリー - Google Patents
銅基材に有益な化学機械的研磨スラリー Download PDFInfo
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- JP2007150341A JP2007150341A JP2007008250A JP2007008250A JP2007150341A JP 2007150341 A JP2007150341 A JP 2007150341A JP 2007008250 A JP2007008250 A JP 2007008250A JP 2007008250 A JP2007008250 A JP 2007008250A JP 2007150341 A JP2007150341 A JP 2007150341A
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- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing slurry
- abrasive
- slurry
- Prior art date
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- 239000002002 slurry Substances 0.000 title claims abstract description 180
- 238000005498 polishing Methods 0.000 title claims abstract description 116
- 239000000126 substance Substances 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 title claims abstract description 48
- 239000010949 copper Substances 0.000 title claims description 46
- 229910052802 copper Inorganic materials 0.000 title description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000007800 oxidant agent Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000008139 complexing agent Substances 0.000 claims abstract description 34
- 239000010936 titanium Substances 0.000 claims abstract description 22
- 239000004094 surface-active agent Substances 0.000 claims abstract description 19
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 17
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 12
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 12
- 238000007517 polishing process Methods 0.000 claims abstract description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims description 40
- 150000004706 metal oxides Chemical class 0.000 claims description 39
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 38
- 239000000203 mixture Substances 0.000 claims description 27
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 24
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 21
- 239000011975 tartaric acid Substances 0.000 claims description 21
- 235000002906 tartaric acid Nutrition 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 230000001590 oxidative effect Effects 0.000 claims description 17
- 239000006185 dispersion Substances 0.000 claims description 16
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 claims description 15
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 239000011164 primary particle Substances 0.000 claims description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- 150000001413 amino acids Chemical class 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- 235000015165 citric acid Nutrition 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 230000002829 reductive effect Effects 0.000 claims description 3
- 229910021485 fumed silica Inorganic materials 0.000 claims description 2
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 abstract description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 48
- 239000010408 film Substances 0.000 description 36
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 19
- 239000012964 benzotriazole Substances 0.000 description 19
- 238000004090 dissolution Methods 0.000 description 16
- 239000002245 particle Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 239000002243 precursor Substances 0.000 description 13
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 9
- 239000003082 abrasive agent Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 239000012736 aqueous medium Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000004202 carbamide Substances 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- -1 potassium ferricyanide Chemical compound 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005411 Van der Waals force Methods 0.000 description 3
- 235000011054 acetic acid Nutrition 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical group [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 description 3
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 3
- 238000005189 flocculation Methods 0.000 description 3
- 230000016615 flocculation Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 239000002609 medium Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 239000004471 Glycine Substances 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000005518 electrochemistry Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 235000019333 sodium laurylsulphate Nutrition 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- DOBUSJIVSSJEDA-UHFFFAOYSA-L 1,3-dioxa-2$l^{6}-thia-4-mercuracyclobutane 2,2-dioxide Chemical class [Hg+2].[O-]S([O-])(=O)=O DOBUSJIVSSJEDA-UHFFFAOYSA-L 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- NECRQCBKTGZNMH-UHFFFAOYSA-N 3,5-dimethylhex-1-yn-3-ol Chemical compound CC(C)CC(C)(O)C#C NECRQCBKTGZNMH-UHFFFAOYSA-N 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical group [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 241000238558 Eucarida Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- 229920013808 TRITON DF-16 Polymers 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000701 coagulant Substances 0.000 description 1
- 238000001246 colloidal dispersion Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- WTHDKMILWLGDKL-UHFFFAOYSA-N urea;hydrate Chemical compound O.NC(N)=O WTHDKMILWLGDKL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
Abstract
【解決手段】酸化剤、錯化剤、研磨材、及び随意の界面活性剤を含有する化学機械的研磨スラリー、並びに化学機械的研磨スラリーを使用して、銅合金、チタン、窒化チタン、タンタル、及び窒化タンタルを含む層を基材から除去する方法。このスラリーは、別個のフィルム形成剤を含有しない。
【選択図】なし
Description
この例は、フィルム形成剤BTAを伴うCMPスラリー及びフィルム形成剤BTAを伴わないCMPスラリーの存在下での、銅の溶解及び腐食を評価している。CMP処理の間のCuの溶解速度は、電気化学的な測定から求める。電気化学低なデータのほとんどは、Cu回転ディスク電極(Pineによる回転装置を伴う)及び273PontentiostatであってCorrosion Softwareを伴うもの(EG&G、PERによる)からなる装置を使用して、他の場所で得る(すなわち、研磨テーブル以外で)。プラチナメッシュ電極を補助電極として使用し、飽和硫酸水銀電極(MSE)を参照電極として使用する。電気化学データは、予め選択された電極の回転速度である500rpm(又は最大で19.94m/秒)で、回転装置と電極を、磨擦パッドと接触させて(下向きの力を1.2kg又は5.9psiにして)又はパッドの上に持ち上げて得る。
この例は、0.04wt%のBTAフィルム形成剤を伴うCMPスラリー及び伴わないCMPスラリーの、様々な基材の層を研磨する能力を評価する。それぞれのスラリーは、2.0wt%のH2 O2 、1.0wt%の酒石酸、3.0wt%のSEMI−SPERSE(商標)W−A355フュームドアルミナ分散体(Cabot社が製造)、及び50ppmのTriton DF−16を含有していた。それぞれのスラリーのpHは、NH4 OHによって調製して使用の前に7.0にした。
この例では、異なる濃度のH2 O2 及び酒石酸を伴うpHが7.0のスラリーを使用して、Cu、Ta、及びガラスの除去速度を決定した。それぞれのスラリーで使用する研磨材は、Cabot社が製造するSEMI−SPERSE(商標)W−A355フュームドアルミナ分散体であった。研磨の結果は、表3に報告する。PVD銅ウェハーは、IPEC472ツールを使用して、下向きの力を20.7kPa(3psi)、背圧を4.1(0.6psi)、圧盤速度を55rpm、そしてキャリアー速度を30rpmにして研磨した。
Claims (33)
- 研磨材、
少なくとも1種の酸化剤、及び
クエン酸、乳酸、酒石酸、マロン酸、コハク酸、シュウ酸、アミノ酸、それらの塩、及びそれらの混合物を含む化合物の群より選択される約0.1〜5.0wt%の錯化剤、
を含有する化学機械的研磨スラリーであって、pHが約5〜約9であり、フィルム形成剤を含有しない、化学機械的研磨スラリー。 - 前記錯化剤が酒石酸である、請求項1に記載の化学機械的研磨スラリー。
- 前記酒石酸が0.5〜約3.0wt%の量で存在する、請求項2に記載の化学機械的研磨スラリー。
- 前記酸化剤が、還元したときにヒドロキシルラジカルを形成する化合物である、請求項1に記載の化学機械的研磨スラリー。
- 前記酸化剤が、過酸化水素、過酸化水素尿素、及びそれらの組み合わせからなる群より選択される、請求項4に記載の化学機械的研磨スラリー。
- 前記過酸化水素が、約0.3〜約17wt%の量で存在する、請求項5に記載の化学機械的研磨スラリー。
- 研磨材、
過酸化水素、過酸化水素尿素、及びそれらの混合物からなる群より選択される酸化剤、及び
酒石酸、
を含有する化学機械的研磨スラリーであって、pHが5〜9であり、フィルム形成剤を含有しない、化学機械的研磨スラリー。 - 前記酸化剤が過酸化水素である、請求項7に記載の化学機械的研磨スラリー。
- 前記酸化剤が過酸化水素尿素である、請求項7に記載の化学機械的研磨スラリー。
- 前記酒石酸が、約0.5〜約3.0wt%の量で前記スラリー中に存在する、請求項7に記載の化学機械的研磨スラリー。
- 前記研磨材が少なくとも1種の金属酸化物である、請求項7に記載の化学機械的研磨スラリー。
- 前記金属酸化物研磨材が、アルミナ、セリア、ゲルマニア、シリカ、チタニア、ジルコニア、及びそれらの混合物を含む群より選択される、請求項11に記載の化学機械的研磨スラリー。
- 前記研磨材が金属酸化物の水性分散体である、請求項7に記載の化学機械的研磨スラリー。
- 前記金属酸化物研磨材が、サイズ分布が約1.0μm未満で平均結合体直径が約0.4μm未満の金属酸化物結合体からなっている、請求項11に記載の化学機械的研磨スラリー。
- 前記金属酸化物研磨材が、一次粒子直径が0.4μm未満で表面積が約10m2 /g〜約250m2 /gの分離した個々の金属酸化物球体からなっている、請求項11に記載の化学機械的研磨スラリー。
- 前記研磨材の表面積が約5m2 /g〜約430m2 /gである、請求項7に記載の化学機械的研磨スラリー。
- 前記研磨材の表面積が約30m2 /g〜約170m2 /gである、請求項7に記載の化学機械的研磨スラリー。
- 前記研磨材が、沈降研磨材又はフュームド研磨材からなる群より選択される、請求項7に記載の化学機械的研磨スラリー。
- 約1.0〜約15.0wt%のアルミナ研磨材、
約1.0〜約12.0wt%の過酸化水素、及び
約0.5〜約3.0wt%の酒石酸、
を含有する化学機械的研磨スラリーであって、この組成物のpHが約5〜約9に調節されており、フィルム形成剤を含有しない、化学機械的研磨スラリー。 - 少なくとも1種の界面活性剤を含有する、請求項19に記載の化学機械的研磨スラリー。
- (a)約1.0〜約15.0wt%の研磨材、約0.3〜約17.0wt%の酸化剤、約0.1〜約5.0wt%の少なくとも1種の錯化剤、及び脱イオン水を混合して、フィルム形成剤を含有しない化学機械的研磨スラリーをもたらす工程、
(b)前記スラリーのpHを約5〜約9に調節する工程、
(c)前記化学機械的研磨スラリーを基材に適用する工程、及び
(d)パッドを前記基材と接触させ、前記基材に対してこのパッドを動かすことによって、前記基材から金属層の少なくとも一部を除去する工程、
を含む、少なくとも1つの金属層を有する基材を研磨する方法。 - 前記基材が銅合金含有層を有する、請求項21に記載の方法。
- 前記基材が、チタン及び窒化チタンの層を更に有し、このチタン及び窒化チタンの層の少なくとも一部を工程(c)において除去する、請求項21に記載の方法。
- 前記化学機械的研磨スラリーを、前記パッドに適用してから、このパッドを前記基材と接触させる、請求項21に記載の方法。
- 前記酸化剤が、過酸化水素、過酸化水素尿素、又はそれらの混合物である、請求項21に記載の方法。
- 前記錯化剤が酒石酸である、請求項21に記載の方法。
- 前記化学機械的研磨スラリーのpHが、約5.0〜約9.0である、請求項21に記載の方法。
- 前記研磨材が金属酸化物である、請求項21に記載の方法。
- 前記金属酸化物研磨材が、アルミナ、セリア、ゲルマニア、シリカ、チタニア、ジルコニア、及びそれらの混合物を含む群より選択される、請求項28に記載の方法。
- 前記研磨材が金属酸化物の水性分散体である、請求項21に記載の方法。
- 前記金属酸化物研磨材が、沈降アルミナ、フュームドアルミナ、沈降シリカ、フュームドシリカ、及びそれらの混合物からなる群より選択される、請求項30に記載の方法。
- (a)約1.0〜約15.0wt%のアルミナ、約1.0〜約12.0wt%の過酸化水素、約0.5〜約3.0wt%の酒石酸、及び脱イオン水を混合して、チタンに対する銅合金の研磨選択性[Cu:Ti]が約4.0未満である化学機械的研磨スラリーをもたらすこと、
(b)前記化学機械的研磨スラリーのpHを約5.0〜約9.0に調節すること、
(c)前記化学機械的研磨スラリーを基材に適用すること、及び
(d)パッドを前記基材と接触させ、前記基材に対してこのパッドを動かすことによって、銅合金層の少なくとも一部、チタン層の少なくとも一部、及び窒化チタン層の少なくとも一部を除去すること、
を含む、銅合金層、チタン層及び窒化チタン層を有する基材を研磨する方法。 - (a)錯化剤を保持する第1の容器、
(b)酸化剤を保持する第2の容器、並びに
(c)前記第1の容器、前記第1の容器、及び第3の容器からなる群より選択される容器に装填された研磨材、
を有する、化学機械的研磨スラリーを調製するのに有益な複数容器設備。
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Also Published As
Publication number | Publication date |
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US20040009671A1 (en) | 2004-01-15 |
KR20010041962A (ko) | 2001-05-25 |
CN1301288A (zh) | 2001-06-27 |
ID27122A (id) | 2001-03-01 |
TWI256966B (en) | 2006-06-21 |
US6620037B2 (en) | 2003-09-16 |
IL138483A0 (en) | 2001-10-31 |
EP1064338B1 (en) | 2006-08-30 |
CA2324151A1 (en) | 1999-09-23 |
EP1064338A1 (en) | 2001-01-03 |
DE69933015T2 (de) | 2006-12-14 |
KR100594561B1 (ko) | 2006-06-30 |
US20010049910A1 (en) | 2001-12-13 |
US7381648B2 (en) | 2008-06-03 |
CN1157450C (zh) | 2004-07-14 |
US20020168923A1 (en) | 2002-11-14 |
DE69933015D1 (de) | 2006-10-12 |
AU3100499A (en) | 1999-10-11 |
JP2012004588A (ja) | 2012-01-05 |
US6432828B2 (en) | 2002-08-13 |
JP2002506915A (ja) | 2002-03-05 |
JP5539934B2 (ja) | 2014-07-02 |
WO1999047618A1 (en) | 1999-09-23 |
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