IE872671L - A method for selective intermixing of layered structures composed of thin solid films - Google Patents

A method for selective intermixing of layered structures composed of thin solid films

Info

Publication number
IE872671L
IE872671L IE872671A IE267187A IE872671L IE 872671 L IE872671 L IE 872671L IE 872671 A IE872671 A IE 872671A IE 267187 A IE267187 A IE 267187A IE 872671 L IE872671 L IE 872671L
Authority
IE
Ireland
Prior art keywords
intermixing
thin solid
layered structures
solid films
structures composed
Prior art date
Application number
IE872671A
Other languages
English (en)
Original Assignee
Innolith
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innolith filed Critical Innolith
Publication of IE872671L publication Critical patent/IE872671L/xx

Links

Classifications

    • H10P95/00—
    • H10P95/90—
    • H10P14/3824—
    • H10P32/14—
    • H10P32/174—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Recrystallisation Techniques (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Magnetic Heads (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Photovoltaic Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
IE872671A 1986-10-09 1987-10-06 A method for selective intermixing of layered structures composed of thin solid films IE872671L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/916,818 US4731338A (en) 1986-10-09 1986-10-09 Method for selective intermixing of layered structures composed of thin solid films

Publications (1)

Publication Number Publication Date
IE872671L true IE872671L (en) 1988-04-09

Family

ID=25437882

Family Applications (1)

Application Number Title Priority Date Filing Date
IE872671A IE872671L (en) 1986-10-09 1987-10-06 A method for selective intermixing of layered structures composed of thin solid films

Country Status (11)

Country Link
US (1) US4731338A (oth)
EP (1) EP0264222B1 (oth)
JP (1) JPS63119591A (oth)
KR (1) KR880005660A (oth)
CN (1) CN1012405B (oth)
AT (1) ATE102398T1 (oth)
AU (1) AU592019B2 (oth)
CA (1) CA1277439C (oth)
DE (1) DE3789187T2 (oth)
IE (1) IE872671L (oth)
IN (1) IN171245B (oth)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置
GB2206233B (en) * 1987-06-23 1990-09-05 British Gas Plc Miniature thermoelectric converters
US4817102A (en) * 1988-04-18 1989-03-28 Maurer Larry D Acousto-electromagnetic hologistic resonant system
US5107316A (en) * 1989-12-28 1992-04-21 Siemens Corporate Research, Inc. Catoptrical opto-electronic gas sensor
US5191784A (en) * 1989-12-28 1993-03-09 Siemens Corporate Research, Inc. Opto-electronic gas sensor
US5081633A (en) * 1990-05-31 1992-01-14 Applied Solar Energy Corporation Semiconductor laser diode
US7273981B2 (en) * 2001-02-09 2007-09-25 Bsst, Llc. Thermoelectric power generation systems
US7231772B2 (en) * 2001-02-09 2007-06-19 Bsst Llc. Compact, high-efficiency thermoelectric systems
US6959555B2 (en) * 2001-02-09 2005-11-01 Bsst Llc High power density thermoelectric systems
US6672076B2 (en) 2001-02-09 2004-01-06 Bsst Llc Efficiency thermoelectrics utilizing convective heat flow
US6539725B2 (en) * 2001-02-09 2003-04-01 Bsst Llc Efficiency thermoelectrics utilizing thermal isolation
US7946120B2 (en) 2001-02-09 2011-05-24 Bsst, Llc High capacity thermoelectric temperature control system
US7942010B2 (en) 2001-02-09 2011-05-17 Bsst, Llc Thermoelectric power generating systems utilizing segmented thermoelectric elements
CN100419347C (zh) * 2001-08-07 2008-09-17 Bsst公司 热电个人环境装置
US8490412B2 (en) 2001-08-07 2013-07-23 Bsst, Llc Thermoelectric personal environment appliance
US6812395B2 (en) * 2001-10-24 2004-11-02 Bsst Llc Thermoelectric heterostructure assemblies element
SG99970A1 (en) * 2002-04-05 2003-11-27 Inst Materials Research & Eng Method for forming a modified semiconductor having a plurality of band gaps
US7847179B2 (en) * 2005-06-06 2010-12-07 Board Of Trustees Of Michigan State University Thermoelectric compositions and process
EP2282357B1 (en) * 2005-06-28 2015-12-02 Gentherm Incorporated Thermoelectric power generator for variable thermal power source
US7952015B2 (en) 2006-03-30 2011-05-31 Board Of Trustees Of Michigan State University Pb-Te-compounds doped with tin-antimony-tellurides for thermoelectric generators or peltier arrangements
WO2009094571A2 (en) * 2008-01-25 2009-07-30 The Ohio State University Research Foundation Ternary thermoelectric materials and methods of fabrication
US8640466B2 (en) 2008-06-03 2014-02-04 Bsst Llc Thermoelectric heat pump
US20100024859A1 (en) * 2008-07-29 2010-02-04 Bsst, Llc. Thermoelectric power generator for variable thermal power source
WO2013074967A1 (en) 2011-11-17 2013-05-23 Gentherm Incorporated Thermoelectric devices with interface materials and methods of manufacturing the same
US11075331B2 (en) 2018-07-30 2021-07-27 Gentherm Incorporated Thermoelectric device having circuitry with structural rigidity
EP3745471A1 (en) * 2019-05-31 2020-12-02 OSRAM Opto Semiconductors GmbH Method of laser treatment of a semiconductor wafer comprising algainp-leds to increase their light generating efficiency
DE102021104685A1 (de) 2021-02-26 2022-09-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines optoelektronischen halbleiterbauelements und optoelektronisches halbleiterbauelement

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
FR2504727A1 (fr) * 1981-04-28 1982-10-29 Commissariat Energie Atomique Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel
US4511408A (en) * 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
EP0077825B1 (en) * 1981-05-06 1987-08-12 University of Illinois Foundation Method of forming wide bandgap region within multilayer semiconductors
JPS58112326A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 複合ビ−ムアニ−ル方法
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
AU1859783A (en) * 1983-05-23 1984-11-29 Katz, B.B. Annealing implanted semiconductors by lasers
US4585491A (en) * 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
US4637122A (en) * 1983-09-19 1987-01-20 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
JPH06105718B2 (ja) * 1984-06-05 1994-12-21 日本電気株式会社 半導体装置及びその製造方法
JPS60262417A (ja) * 1984-06-08 1985-12-25 Nec Corp 半導体結晶の製造方法
US4578128A (en) * 1984-12-03 1986-03-25 Ncr Corporation Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants
JPS61191089A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US4654090A (en) * 1985-09-13 1987-03-31 Xerox Corporation Selective disordering of well structures by laser annealing
JPS62257782A (ja) * 1986-05-01 1987-11-10 Mitsubishi Electric Corp 半導体の加工方法

Also Published As

Publication number Publication date
DE3789187T2 (de) 1994-10-06
CA1277439C (en) 1990-12-04
CN1012405B (zh) 1991-04-17
AU7946687A (en) 1988-04-14
AU592019B2 (en) 1989-12-21
KR880005660A (ko) 1988-06-29
CN87106894A (zh) 1988-04-20
DE3789187D1 (de) 1994-04-07
EP0264222A3 (en) 1989-08-16
JPS63119591A (ja) 1988-05-24
EP0264222A2 (en) 1988-04-20
ATE102398T1 (de) 1994-03-15
EP0264222B1 (en) 1994-03-02
IN171245B (oth) 1992-08-22
US4731338A (en) 1988-03-15

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