ATE102398T1 - Selektive verbindung von mehrschichtigen strukturen aus festen duennschichten. - Google Patents

Selektive verbindung von mehrschichtigen strukturen aus festen duennschichten.

Info

Publication number
ATE102398T1
ATE102398T1 AT87308868T AT87308868T ATE102398T1 AT E102398 T1 ATE102398 T1 AT E102398T1 AT 87308868 T AT87308868 T AT 87308868T AT 87308868 T AT87308868 T AT 87308868T AT E102398 T1 ATE102398 T1 AT E102398T1
Authority
AT
Austria
Prior art keywords
thin layers
layer structures
structures made
solid thin
electron beam
Prior art date
Application number
AT87308868T
Other languages
German (de)
English (en)
Inventor
John Duncan Ralston
Anthony Luke Moretti
Ravinder Kumar Jain
Original Assignee
Amoco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amoco Corp filed Critical Amoco Corp
Application granted granted Critical
Publication of ATE102398T1 publication Critical patent/ATE102398T1/de

Links

Classifications

    • H10P95/00—
    • H10P95/90—
    • H10P14/3824—
    • H10P32/14—
    • H10P32/174—

Landscapes

  • Recrystallisation Techniques (AREA)
  • Magnetic Heads (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Photovoltaic Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
AT87308868T 1986-10-09 1987-10-07 Selektive verbindung von mehrschichtigen strukturen aus festen duennschichten. ATE102398T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/916,818 US4731338A (en) 1986-10-09 1986-10-09 Method for selective intermixing of layered structures composed of thin solid films
EP87308868A EP0264222B1 (en) 1986-10-09 1987-10-07 Selective intermixing of layered structures composed of thin solid films

Publications (1)

Publication Number Publication Date
ATE102398T1 true ATE102398T1 (de) 1994-03-15

Family

ID=25437882

Family Applications (1)

Application Number Title Priority Date Filing Date
AT87308868T ATE102398T1 (de) 1986-10-09 1987-10-07 Selektive verbindung von mehrschichtigen strukturen aus festen duennschichten.

Country Status (11)

Country Link
US (1) US4731338A (oth)
EP (1) EP0264222B1 (oth)
JP (1) JPS63119591A (oth)
KR (1) KR880005660A (oth)
CN (1) CN1012405B (oth)
AT (1) ATE102398T1 (oth)
AU (1) AU592019B2 (oth)
CA (1) CA1277439C (oth)
DE (1) DE3789187T2 (oth)
IE (1) IE872671L (oth)
IN (1) IN171245B (oth)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置
GB2206233B (en) * 1987-06-23 1990-09-05 British Gas Plc Miniature thermoelectric converters
US4817102A (en) * 1988-04-18 1989-03-28 Maurer Larry D Acousto-electromagnetic hologistic resonant system
US5191784A (en) * 1989-12-28 1993-03-09 Siemens Corporate Research, Inc. Opto-electronic gas sensor
US5107316A (en) * 1989-12-28 1992-04-21 Siemens Corporate Research, Inc. Catoptrical opto-electronic gas sensor
US5081633A (en) * 1990-05-31 1992-01-14 Applied Solar Energy Corporation Semiconductor laser diode
US6539725B2 (en) * 2001-02-09 2003-04-01 Bsst Llc Efficiency thermoelectrics utilizing thermal isolation
US7946120B2 (en) 2001-02-09 2011-05-24 Bsst, Llc High capacity thermoelectric temperature control system
US7231772B2 (en) * 2001-02-09 2007-06-19 Bsst Llc. Compact, high-efficiency thermoelectric systems
US6672076B2 (en) 2001-02-09 2004-01-06 Bsst Llc Efficiency thermoelectrics utilizing convective heat flow
US7273981B2 (en) * 2001-02-09 2007-09-25 Bsst, Llc. Thermoelectric power generation systems
US7942010B2 (en) 2001-02-09 2011-05-17 Bsst, Llc Thermoelectric power generating systems utilizing segmented thermoelectric elements
US6959555B2 (en) * 2001-02-09 2005-11-01 Bsst Llc High power density thermoelectric systems
US7426835B2 (en) * 2001-08-07 2008-09-23 Bsst, Llc Thermoelectric personal environment appliance
US8490412B2 (en) 2001-08-07 2013-07-23 Bsst, Llc Thermoelectric personal environment appliance
US6812395B2 (en) * 2001-10-24 2004-11-02 Bsst Llc Thermoelectric heterostructure assemblies element
SG99970A1 (en) * 2002-04-05 2003-11-27 Inst Materials Research & Eng Method for forming a modified semiconductor having a plurality of band gaps
US7847179B2 (en) * 2005-06-06 2010-12-07 Board Of Trustees Of Michigan State University Thermoelectric compositions and process
JP2008547370A (ja) * 2005-06-28 2008-12-25 ビーエスエスティー エルエルシー 変動する熱電源用の熱電発電機
US7952015B2 (en) 2006-03-30 2011-05-31 Board Of Trustees Of Michigan State University Pb-Te-compounds doped with tin-antimony-tellurides for thermoelectric generators or peltier arrangements
US20090235969A1 (en) * 2008-01-25 2009-09-24 The Ohio State University Research Foundation Ternary thermoelectric materials and methods of fabrication
US8640466B2 (en) 2008-06-03 2014-02-04 Bsst Llc Thermoelectric heat pump
US20100024859A1 (en) * 2008-07-29 2010-02-04 Bsst, Llc. Thermoelectric power generator for variable thermal power source
DE112012004803B4 (de) 2011-11-17 2022-03-03 Gentherm Inc. Thermoelektrische Vorrichtung mit Grenzflächenmaterialien und Verfahren zur Herstellung derselben
US11223004B2 (en) 2018-07-30 2022-01-11 Gentherm Incorporated Thermoelectric device having a polymeric coating
EP3745471A1 (en) * 2019-05-31 2020-12-02 OSRAM Opto Semiconductors GmbH Method of laser treatment of a semiconductor wafer comprising algainp-leds to increase their light generating efficiency
DE102021104685A1 (de) 2021-02-26 2022-09-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines optoelektronischen halbleiterbauelements und optoelektronisches halbleiterbauelement

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
FR2504727A1 (fr) * 1981-04-28 1982-10-29 Commissariat Energie Atomique Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel
US4511408A (en) * 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
WO1982003946A1 (en) * 1981-05-06 1982-11-11 Illinois Univ Method of forming wide bandgap region within a multilayer iii-v semiconductors
JPS58112326A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 複合ビ−ムアニ−ル方法
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
AU1859783A (en) * 1983-05-23 1984-11-29 Katz, B.B. Annealing implanted semiconductors by lasers
US4585491A (en) * 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
US4637122A (en) * 1983-09-19 1987-01-20 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
JPH06105718B2 (ja) * 1984-06-05 1994-12-21 日本電気株式会社 半導体装置及びその製造方法
JPS60262417A (ja) * 1984-06-08 1985-12-25 Nec Corp 半導体結晶の製造方法
US4578128A (en) * 1984-12-03 1986-03-25 Ncr Corporation Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants
JPS61191089A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US4654090A (en) * 1985-09-13 1987-03-31 Xerox Corporation Selective disordering of well structures by laser annealing
JPS62257782A (ja) * 1986-05-01 1987-11-10 Mitsubishi Electric Corp 半導体の加工方法

Also Published As

Publication number Publication date
EP0264222B1 (en) 1994-03-02
IN171245B (oth) 1992-08-22
DE3789187D1 (de) 1994-04-07
DE3789187T2 (de) 1994-10-06
CA1277439C (en) 1990-12-04
JPS63119591A (ja) 1988-05-24
AU592019B2 (en) 1989-12-21
CN87106894A (zh) 1988-04-20
AU7946687A (en) 1988-04-14
US4731338A (en) 1988-03-15
EP0264222A2 (en) 1988-04-20
IE872671L (en) 1988-04-09
EP0264222A3 (en) 1989-08-16
CN1012405B (zh) 1991-04-17
KR880005660A (ko) 1988-06-29

Similar Documents

Publication Publication Date Title
ATE102398T1 (de) Selektive verbindung von mehrschichtigen strukturen aus festen duennschichten.
EP0781652A3 (de) Peelfähige, siegelbare polyolefinische Mehrschichtfolie, Verfahren zu ihrer Herstellung und ihre Verwendung
KR880006048A (ko) 다중층 포장재 필름(multiple-layer cook-in film)
DE3585741D1 (de) Halbleiterlaser mit verteilter rueckkopplung.
ES2021277B3 (es) Estructura en panal de miel con material plegado en z y metodo de hacerlo
ES8800781A1 (es) Un procedimiento para fabricar un material dielectrico
BR8505723A (pt) Aperfeicoamentos em modulos pre-fabricados e seu emprego na industria da construcao
DE3567829D1 (en) Oriented film comprising at least five layers
ATE16865T1 (de) Verfahren zur herstellung einer ultraschallwandleranordnung.
DE68905425D1 (de) Halbleiteranordnung mit einer steuerelektrode, bestehend aus einer mehrzahl von schichten.
KR890012330A (ko) 트리밍소자와 그 전기단락방법
SE8603348D0 (sv) Selbsttragendes sandwichartiges schallschutzelement
KR850005068A (ko) 레이저비임 조사에 의한 무좀의 치료방법
DE3870651D1 (de) Lasersenderanordnung.
EP0380322A3 (en) Semi-conductor lasers
KR880011965A (ko) 분포 귀환형 반도체 레이저
DE3870996D1 (de) Halbleiter-laser mit verteilter rueckkopplung.
TR25178A (tr) DüSüK KALORILI YAG MALZEMESI VE TRIGLISERID YAGI KARISIMI IHTIVA EDEN EMüLSIFIYE EDILMIS YAG TüRü SOS üRüNü
NL7903162A (nl) Meerlaagsbalk met een geextrudeerde middenlaag, gevormd uit kleine delen van natuurlijke materialen.
DE69018936D1 (de) Mehrschichtige Strukturen und Verfahren zur Herstellung derselben zur Erzeugung von TFEL-Randstrahlmodulen.
JPS5650531A (en) Semiconductor integrated circuit and programming method therefor
EP0311331A3 (en) Superconducting ceramic circuit elements
JPS57159074A (en) Tunnel type josephson element
ES2003327T3 (es) Metodo de fabricacion de un articulo multimetalico.
JPS62240187A (ja) レ−ザ光を用いた穿孔方法

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties