ATE102398T1 - Selektive verbindung von mehrschichtigen strukturen aus festen duennschichten. - Google Patents

Selektive verbindung von mehrschichtigen strukturen aus festen duennschichten.

Info

Publication number
ATE102398T1
ATE102398T1 AT87308868T AT87308868T ATE102398T1 AT E102398 T1 ATE102398 T1 AT E102398T1 AT 87308868 T AT87308868 T AT 87308868T AT 87308868 T AT87308868 T AT 87308868T AT E102398 T1 ATE102398 T1 AT E102398T1
Authority
AT
Austria
Prior art keywords
thin layers
layer structures
structures made
solid thin
electron beam
Prior art date
Application number
AT87308868T
Other languages
English (en)
Inventor
John Duncan Ralston
Anthony Luke Moretti
Ravinder Kumar Jain
Original Assignee
Amoco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amoco Corp filed Critical Amoco Corp
Application granted granted Critical
Publication of ATE102398T1 publication Critical patent/ATE102398T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/182—Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Magnetic Heads (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Semiconductor Lasers (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Photovoltaic Devices (AREA)
  • Element Separation (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
AT87308868T 1986-10-09 1987-10-07 Selektive verbindung von mehrschichtigen strukturen aus festen duennschichten. ATE102398T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/916,818 US4731338A (en) 1986-10-09 1986-10-09 Method for selective intermixing of layered structures composed of thin solid films
EP87308868A EP0264222B1 (de) 1986-10-09 1987-10-07 Selektive Verbindung von mehrschichtigen Strukturen aus festen Dünnschichten

Publications (1)

Publication Number Publication Date
ATE102398T1 true ATE102398T1 (de) 1994-03-15

Family

ID=25437882

Family Applications (1)

Application Number Title Priority Date Filing Date
AT87308868T ATE102398T1 (de) 1986-10-09 1987-10-07 Selektive verbindung von mehrschichtigen strukturen aus festen duennschichten.

Country Status (11)

Country Link
US (1) US4731338A (de)
EP (1) EP0264222B1 (de)
JP (1) JPS63119591A (de)
KR (1) KR880005660A (de)
CN (1) CN1012405B (de)
AT (1) ATE102398T1 (de)
AU (1) AU592019B2 (de)
CA (1) CA1277439C (de)
DE (1) DE3789187T2 (de)
IE (1) IE872671L (de)
IN (1) IN171245B (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置
GB2206233B (en) * 1987-06-23 1990-09-05 British Gas Plc Miniature thermoelectric converters
US4817102A (en) * 1988-04-18 1989-03-28 Maurer Larry D Acousto-electromagnetic hologistic resonant system
US5191784A (en) * 1989-12-28 1993-03-09 Siemens Corporate Research, Inc. Opto-electronic gas sensor
US5107316A (en) * 1989-12-28 1992-04-21 Siemens Corporate Research, Inc. Catoptrical opto-electronic gas sensor
US5081633A (en) * 1990-05-31 1992-01-14 Applied Solar Energy Corporation Semiconductor laser diode
US7231772B2 (en) * 2001-02-09 2007-06-19 Bsst Llc. Compact, high-efficiency thermoelectric systems
US7273981B2 (en) * 2001-02-09 2007-09-25 Bsst, Llc. Thermoelectric power generation systems
US7946120B2 (en) 2001-02-09 2011-05-24 Bsst, Llc High capacity thermoelectric temperature control system
US6959555B2 (en) * 2001-02-09 2005-11-01 Bsst Llc High power density thermoelectric systems
US6539725B2 (en) * 2001-02-09 2003-04-01 Bsst Llc Efficiency thermoelectrics utilizing thermal isolation
US7942010B2 (en) 2001-02-09 2011-05-17 Bsst, Llc Thermoelectric power generating systems utilizing segmented thermoelectric elements
US6672076B2 (en) 2001-02-09 2004-01-06 Bsst Llc Efficiency thermoelectrics utilizing convective heat flow
US8490412B2 (en) 2001-08-07 2013-07-23 Bsst, Llc Thermoelectric personal environment appliance
JP2004537708A (ja) * 2001-08-07 2004-12-16 ビーエスエスティー エルエルシー 熱電気式個人用環境調整機器
US6812395B2 (en) * 2001-10-24 2004-11-02 Bsst Llc Thermoelectric heterostructure assemblies element
SG99970A1 (en) * 2002-04-05 2003-11-27 Inst Materials Research & Eng Method for forming a modified semiconductor having a plurality of band gaps
US7847179B2 (en) * 2005-06-06 2010-12-07 Board Of Trustees Of Michigan State University Thermoelectric compositions and process
US9006556B2 (en) * 2005-06-28 2015-04-14 Genthem Incorporated Thermoelectric power generator for variable thermal power source
US7952015B2 (en) 2006-03-30 2011-05-31 Board Of Trustees Of Michigan State University Pb-Te-compounds doped with tin-antimony-tellurides for thermoelectric generators or peltier arrangements
US20090235969A1 (en) * 2008-01-25 2009-09-24 The Ohio State University Research Foundation Ternary thermoelectric materials and methods of fabrication
WO2009149207A2 (en) 2008-06-03 2009-12-10 Bsst Llc Thermoelectric heat pump
US20100024859A1 (en) * 2008-07-29 2010-02-04 Bsst, Llc. Thermoelectric power generator for variable thermal power source
AU2012340268C1 (en) 2011-11-17 2016-10-20 Gentherm Incorporated Thermoelectric devices with interface materials and methods of manufacturing the same
US20200035898A1 (en) 2018-07-30 2020-01-30 Gentherm Incorporated Thermoelectric device having circuitry that facilitates manufacture
EP3745471A1 (de) * 2019-05-31 2020-12-02 OSRAM Opto Semiconductors GmbH Verfahren zur laserbehandlung eines halbleiterwafers mit algainp-leds zur erhöhung ihrer lichterzeugungseffizienz
DE102021104685A1 (de) 2021-02-26 2022-09-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines optoelektronischen halbleiterbauelements und optoelektronisches halbleiterbauelement

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
FR2504727A1 (fr) * 1981-04-28 1982-10-29 Commissariat Energie Atomique Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel
US4511408A (en) * 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
EP0077825B1 (de) * 1981-05-06 1987-08-12 University of Illinois Foundation Verfahren zur herstellung einer zone mit grossem bandabstand innerhalb mehrschichten halbleiter
JPS58112326A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 複合ビ−ムアニ−ル方法
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
AU1859783A (en) * 1983-05-23 1984-11-29 Katz, B.B. Annealing implanted semiconductors by lasers
US4585491A (en) * 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
US4637122A (en) * 1983-09-19 1987-01-20 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
JPH06105718B2 (ja) * 1984-06-05 1994-12-21 日本電気株式会社 半導体装置及びその製造方法
JPS60262417A (ja) * 1984-06-08 1985-12-25 Nec Corp 半導体結晶の製造方法
US4578128A (en) * 1984-12-03 1986-03-25 Ncr Corporation Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants
JPS61191089A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US4654090A (en) * 1985-09-13 1987-03-31 Xerox Corporation Selective disordering of well structures by laser annealing
JPS62257782A (ja) * 1986-05-01 1987-11-10 Mitsubishi Electric Corp 半導体の加工方法

Also Published As

Publication number Publication date
AU592019B2 (en) 1989-12-21
IE872671L (en) 1988-04-09
EP0264222A2 (de) 1988-04-20
IN171245B (de) 1992-08-22
EP0264222A3 (en) 1989-08-16
CN1012405B (zh) 1991-04-17
KR880005660A (ko) 1988-06-29
DE3789187T2 (de) 1994-10-06
CN87106894A (zh) 1988-04-20
AU7946687A (en) 1988-04-14
EP0264222B1 (de) 1994-03-02
US4731338A (en) 1988-03-15
DE3789187D1 (de) 1994-04-07
JPS63119591A (ja) 1988-05-24
CA1277439C (en) 1990-12-04

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