ATE102398T1 - Selektive verbindung von mehrschichtigen strukturen aus festen duennschichten. - Google Patents
Selektive verbindung von mehrschichtigen strukturen aus festen duennschichten.Info
- Publication number
- ATE102398T1 ATE102398T1 AT87308868T AT87308868T ATE102398T1 AT E102398 T1 ATE102398 T1 AT E102398T1 AT 87308868 T AT87308868 T AT 87308868T AT 87308868 T AT87308868 T AT 87308868T AT E102398 T1 ATE102398 T1 AT E102398T1
- Authority
- AT
- Austria
- Prior art keywords
- thin layers
- layer structures
- structures made
- solid thin
- electron beam
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3824—Intermixing, interdiffusion or disordering of III-V heterostructures, e.g. IILD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/174—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being Group III-V material
Landscapes
- Recrystallisation Techniques (AREA)
- Magnetic Heads (AREA)
- Coils Or Transformers For Communication (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Sampling And Sample Adjustment (AREA)
- Junction Field-Effect Transistors (AREA)
- Photovoltaic Devices (AREA)
- Semiconductor Lasers (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/916,818 US4731338A (en) | 1986-10-09 | 1986-10-09 | Method for selective intermixing of layered structures composed of thin solid films |
| EP87308868A EP0264222B1 (de) | 1986-10-09 | 1987-10-07 | Selektive Verbindung von mehrschichtigen Strukturen aus festen Dünnschichten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE102398T1 true ATE102398T1 (de) | 1994-03-15 |
Family
ID=25437882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT87308868T ATE102398T1 (de) | 1986-10-09 | 1987-10-07 | Selektive verbindung von mehrschichtigen strukturen aus festen duennschichten. |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US4731338A (de) |
| EP (1) | EP0264222B1 (de) |
| JP (1) | JPS63119591A (de) |
| KR (1) | KR880005660A (de) |
| CN (1) | CN1012405B (de) |
| AT (1) | ATE102398T1 (de) |
| AU (1) | AU592019B2 (de) |
| CA (1) | CA1277439C (de) |
| DE (1) | DE3789187T2 (de) |
| IE (1) | IE872671L (de) |
| IN (1) | IN171245B (de) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2544378B2 (ja) * | 1987-03-25 | 1996-10-16 | 株式会社日立製作所 | 光半導体装置 |
| GB2206233B (en) * | 1987-06-23 | 1990-09-05 | British Gas Plc | Miniature thermoelectric converters |
| US4817102A (en) * | 1988-04-18 | 1989-03-28 | Maurer Larry D | Acousto-electromagnetic hologistic resonant system |
| US5107316A (en) * | 1989-12-28 | 1992-04-21 | Siemens Corporate Research, Inc. | Catoptrical opto-electronic gas sensor |
| US5191784A (en) * | 1989-12-28 | 1993-03-09 | Siemens Corporate Research, Inc. | Opto-electronic gas sensor |
| US5081633A (en) * | 1990-05-31 | 1992-01-14 | Applied Solar Energy Corporation | Semiconductor laser diode |
| US7231772B2 (en) * | 2001-02-09 | 2007-06-19 | Bsst Llc. | Compact, high-efficiency thermoelectric systems |
| US6539725B2 (en) * | 2001-02-09 | 2003-04-01 | Bsst Llc | Efficiency thermoelectrics utilizing thermal isolation |
| US6959555B2 (en) * | 2001-02-09 | 2005-11-01 | Bsst Llc | High power density thermoelectric systems |
| US7942010B2 (en) | 2001-02-09 | 2011-05-17 | Bsst, Llc | Thermoelectric power generating systems utilizing segmented thermoelectric elements |
| US6672076B2 (en) * | 2001-02-09 | 2004-01-06 | Bsst Llc | Efficiency thermoelectrics utilizing convective heat flow |
| US7273981B2 (en) * | 2001-02-09 | 2007-09-25 | Bsst, Llc. | Thermoelectric power generation systems |
| US7946120B2 (en) | 2001-02-09 | 2011-05-24 | Bsst, Llc | High capacity thermoelectric temperature control system |
| WO2003014634A1 (en) * | 2001-08-07 | 2003-02-20 | Bsst Llc | Thermoelectric personal environment appliance |
| US8490412B2 (en) | 2001-08-07 | 2013-07-23 | Bsst, Llc | Thermoelectric personal environment appliance |
| US6812395B2 (en) * | 2001-10-24 | 2004-11-02 | Bsst Llc | Thermoelectric heterostructure assemblies element |
| SG99970A1 (en) * | 2002-04-05 | 2003-11-27 | Inst Materials Research & Eng | Method for forming a modified semiconductor having a plurality of band gaps |
| US7847179B2 (en) * | 2005-06-06 | 2010-12-07 | Board Of Trustees Of Michigan State University | Thermoelectric compositions and process |
| US9006556B2 (en) * | 2005-06-28 | 2015-04-14 | Genthem Incorporated | Thermoelectric power generator for variable thermal power source |
| US7952015B2 (en) | 2006-03-30 | 2011-05-31 | Board Of Trustees Of Michigan State University | Pb-Te-compounds doped with tin-antimony-tellurides for thermoelectric generators or peltier arrangements |
| US20090235969A1 (en) * | 2008-01-25 | 2009-09-24 | The Ohio State University Research Foundation | Ternary thermoelectric materials and methods of fabrication |
| WO2009149207A2 (en) | 2008-06-03 | 2009-12-10 | Bsst Llc | Thermoelectric heat pump |
| US20100024859A1 (en) * | 2008-07-29 | 2010-02-04 | Bsst, Llc. | Thermoelectric power generator for variable thermal power source |
| JP6005754B2 (ja) | 2011-11-17 | 2016-10-12 | ジェンサーム インコーポレイテッドＧｅｎｔｈｅｒｍ Ｉｎｃｏｒｐｏｒａｔｅｄ | 界面材料を有する熱電デバイスおよびその製造方法 |
| US20200035898A1 (en) | 2018-07-30 | 2020-01-30 | Gentherm Incorporated | Thermoelectric device having circuitry that facilitates manufacture |
| EP3745471A1 (de) * | 2019-05-31 | 2020-12-02 | OSRAM Opto Semiconductors GmbH | Verfahren zur laserbehandlung eines halbleiterwafers mit algainp-leds zur erhöhung ihrer lichterzeugungseffizienz |
| DE102021104685A1 (de) | 2021-02-26 | 2022-09-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines optoelektronischen halbleiterbauelements und optoelektronisches halbleiterbauelement |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4318752A (en) * | 1980-05-16 | 1982-03-09 | Bell Telephone Laboratories, Incorporated | Heterojunction semiconductor laser fabrication utilizing laser radiation |
| FR2504727A1 (fr) * | 1981-04-28 | 1982-10-29 | Commissariat Energie Atomique | Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel |
| US4511408A (en) * | 1982-04-22 | 1985-04-16 | The Board Of Trustees Of The University Of Illinois | Semiconductor device fabrication with disordering elements introduced into active region |
| JPS58500681A (ja) * | 1981-05-06 | 1983-04-28 | ユニバ−シテイ オブ イリノイ フアンデ−シヨン | 半導体装置の製造方法 |
| JPS58112326A (ja) * | 1981-12-26 | 1983-07-04 | Fujitsu Ltd | 複合ビ−ムアニ−ル方法 |
| US4639275A (en) * | 1982-04-22 | 1987-01-27 | The Board Of Trustees Of The University Of Illinois | Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor |
| AU1859783A (en) * | 1983-05-23 | 1984-11-29 | Katz, B.B. | Annealing implanted semiconductors by lasers |
| US4585491A (en) * | 1983-09-02 | 1986-04-29 | Xerox Corporation | Wavelength tuning of quantum well lasers by thermal annealing |
| US4637122A (en) * | 1983-09-19 | 1987-01-20 | Honeywell Inc. | Integrated quantum well lasers for wavelength division multiplexing |
| JPH06105718B2 (ja) * | 1984-06-05 | 1994-12-21 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JPS60262417A (ja) * | 1984-06-08 | 1985-12-25 | Nec Corp | 半導体結晶の製造方法 |
| US4578128A (en) * | 1984-12-03 | 1986-03-25 | Ncr Corporation | Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants |
| JPS61191089A (ja) * | 1985-02-20 | 1986-08-25 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US4654090A (en) * | 1985-09-13 | 1987-03-31 | Xerox Corporation | Selective disordering of well structures by laser annealing |
| JPS62257782A (ja) * | 1986-05-01 | 1987-11-10 | Mitsubishi Electric Corp | 半導体の加工方法 |
-
1986
- 1986-10-09 US US06/916,818 patent/US4731338A/en not_active Expired - Lifetime
-
1987
- 1987-10-06 IE IE872671A patent/IE872671L/xx unknown
- 1987-10-06 KR KR870011156A patent/KR880005660A/ko not_active Withdrawn
- 1987-10-06 CA CA000548660A patent/CA1277439C/en not_active Expired - Fee Related
- 1987-10-06 IN IN875/DEL/87A patent/IN171245B/en unknown
- 1987-10-07 EP EP87308868A patent/EP0264222B1/de not_active Expired - Lifetime
- 1987-10-07 AT AT87308868T patent/ATE102398T1/de not_active IP Right Cessation
- 1987-10-07 DE DE3789187T patent/DE3789187T2/de not_active Expired - Fee Related
- 1987-10-08 AU AU79466/87A patent/AU592019B2/en not_active Ceased
- 1987-10-09 JP JP62256117A patent/JPS63119591A/ja active Pending
- 1987-10-09 CN CN87106894A patent/CN1012405B/zh not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE3789187T2 (de) | 1994-10-06 |
| DE3789187D1 (de) | 1994-04-07 |
| EP0264222A3 (en) | 1989-08-16 |
| KR880005660A (ko) | 1988-06-29 |
| CN87106894A (zh) | 1988-04-20 |
| CA1277439C (en) | 1990-12-04 |
| EP0264222B1 (de) | 1994-03-02 |
| AU592019B2 (en) | 1989-12-21 |
| CN1012405B (zh) | 1991-04-17 |
| US4731338A (en) | 1988-03-15 |
| EP0264222A2 (de) | 1988-04-20 |
| IN171245B (de) | 1992-08-22 |
| IE872671L (en) | 1988-04-09 |
| AU7946687A (en) | 1988-04-14 |
| JPS63119591A (ja) | 1988-05-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |