IN171245B - - Google Patents

Info

Publication number
IN171245B
IN171245B IN875/DEL/87A IN875DE1987A IN171245B IN 171245 B IN171245 B IN 171245B IN 875DE1987 A IN875DE1987 A IN 875DE1987A IN 171245 B IN171245 B IN 171245B
Authority
IN
India
Prior art keywords
electron beam
intermixing
laser
materials
distinction
Prior art date
Application number
IN875/DEL/87A
Other languages
English (en)
Inventor
John Duncan Ralston
Anthony Luke Moretti
Ravinder Kumar Jain
Original Assignee
Amoco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Amoco Corp filed Critical Amoco Corp
Publication of IN171245B publication Critical patent/IN171245B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/2636Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/182Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258Diffusion into or out of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Magnetic Heads (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Photovoltaic Devices (AREA)
  • Semiconductor Lasers (AREA)
IN875/DEL/87A 1986-10-09 1987-10-06 IN171245B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/916,818 US4731338A (en) 1986-10-09 1986-10-09 Method for selective intermixing of layered structures composed of thin solid films

Publications (1)

Publication Number Publication Date
IN171245B true IN171245B (de) 1992-08-22

Family

ID=25437882

Family Applications (1)

Application Number Title Priority Date Filing Date
IN875/DEL/87A IN171245B (de) 1986-10-09 1987-10-06

Country Status (11)

Country Link
US (1) US4731338A (de)
EP (1) EP0264222B1 (de)
JP (1) JPS63119591A (de)
KR (1) KR880005660A (de)
CN (1) CN1012405B (de)
AT (1) ATE102398T1 (de)
AU (1) AU592019B2 (de)
CA (1) CA1277439C (de)
DE (1) DE3789187T2 (de)
IE (1) IE872671L (de)
IN (1) IN171245B (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置
GB2206233B (en) * 1987-06-23 1990-09-05 British Gas Plc Miniature thermoelectric converters
US4817102A (en) * 1988-04-18 1989-03-28 Maurer Larry D Acousto-electromagnetic hologistic resonant system
US5107316A (en) * 1989-12-28 1992-04-21 Siemens Corporate Research, Inc. Catoptrical opto-electronic gas sensor
US5191784A (en) * 1989-12-28 1993-03-09 Siemens Corporate Research, Inc. Opto-electronic gas sensor
US5081633A (en) * 1990-05-31 1992-01-14 Applied Solar Energy Corporation Semiconductor laser diode
US6959555B2 (en) * 2001-02-09 2005-11-01 Bsst Llc High power density thermoelectric systems
US7231772B2 (en) * 2001-02-09 2007-06-19 Bsst Llc. Compact, high-efficiency thermoelectric systems
US6539725B2 (en) * 2001-02-09 2003-04-01 Bsst Llc Efficiency thermoelectrics utilizing thermal isolation
US7942010B2 (en) 2001-02-09 2011-05-17 Bsst, Llc Thermoelectric power generating systems utilizing segmented thermoelectric elements
US7946120B2 (en) 2001-02-09 2011-05-24 Bsst, Llc High capacity thermoelectric temperature control system
US6672076B2 (en) 2001-02-09 2004-01-06 Bsst Llc Efficiency thermoelectrics utilizing convective heat flow
US7273981B2 (en) * 2001-02-09 2007-09-25 Bsst, Llc. Thermoelectric power generation systems
US7426835B2 (en) * 2001-08-07 2008-09-23 Bsst, Llc Thermoelectric personal environment appliance
US8490412B2 (en) 2001-08-07 2013-07-23 Bsst, Llc Thermoelectric personal environment appliance
US6812395B2 (en) * 2001-10-24 2004-11-02 Bsst Llc Thermoelectric heterostructure assemblies element
SG99970A1 (en) * 2002-04-05 2003-11-27 Inst Materials Research & Eng Method for forming a modified semiconductor having a plurality of band gaps
US7847179B2 (en) * 2005-06-06 2010-12-07 Board Of Trustees Of Michigan State University Thermoelectric compositions and process
CN101213679B (zh) * 2005-06-28 2010-09-29 Bsst有限责任公司 用于可变热功率源的热电发电机
US7952015B2 (en) 2006-03-30 2011-05-31 Board Of Trustees Of Michigan State University Pb-Te-compounds doped with tin-antimony-tellurides for thermoelectric generators or peltier arrangements
WO2009094571A2 (en) * 2008-01-25 2009-07-30 The Ohio State University Research Foundation Ternary thermoelectric materials and methods of fabrication
US8701422B2 (en) * 2008-06-03 2014-04-22 Bsst Llc Thermoelectric heat pump
US20100024859A1 (en) * 2008-07-29 2010-02-04 Bsst, Llc. Thermoelectric power generator for variable thermal power source
JP6005754B2 (ja) 2011-11-17 2016-10-12 ジェンサーム インコーポレイテッドGentherm Incorporated 界面材料を有する熱電デバイスおよびその製造方法
US20200035898A1 (en) 2018-07-30 2020-01-30 Gentherm Incorporated Thermoelectric device having circuitry that facilitates manufacture
EP3745471A1 (de) * 2019-05-31 2020-12-02 OSRAM Opto Semiconductors GmbH Verfahren zur laserbehandlung eines halbleiterwafers mit algainp-leds zur erhöhung ihrer lichterzeugungseffizienz
DE102021104685A1 (de) 2021-02-26 2022-09-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung eines optoelektronischen halbleiterbauelements und optoelektronisches halbleiterbauelement

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
FR2504727A1 (fr) * 1981-04-28 1982-10-29 Commissariat Energie Atomique Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel
DE3276979D1 (en) * 1981-05-06 1987-09-17 Univ Illinois Method of forming wide bandgap region within multilayer semiconductors
US4511408A (en) * 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
JPS58112326A (ja) * 1981-12-26 1983-07-04 Fujitsu Ltd 複合ビ−ムアニ−ル方法
US4639275A (en) * 1982-04-22 1987-01-27 The Board Of Trustees Of The University Of Illinois Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
AU1859783A (en) * 1983-05-23 1984-11-29 Katz, B.B. Annealing implanted semiconductors by lasers
US4585491A (en) * 1983-09-02 1986-04-29 Xerox Corporation Wavelength tuning of quantum well lasers by thermal annealing
US4637122A (en) * 1983-09-19 1987-01-20 Honeywell Inc. Integrated quantum well lasers for wavelength division multiplexing
JPH06105718B2 (ja) * 1984-06-05 1994-12-21 日本電気株式会社 半導体装置及びその製造方法
JPS60262417A (ja) * 1984-06-08 1985-12-25 Nec Corp 半導体結晶の製造方法
US4578128A (en) * 1984-12-03 1986-03-25 Ncr Corporation Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants
JPS61191089A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US4654090A (en) * 1985-09-13 1987-03-31 Xerox Corporation Selective disordering of well structures by laser annealing
JPS62257782A (ja) * 1986-05-01 1987-11-10 Mitsubishi Electric Corp 半導体の加工方法

Also Published As

Publication number Publication date
CN1012405B (zh) 1991-04-17
CN87106894A (zh) 1988-04-20
ATE102398T1 (de) 1994-03-15
AU592019B2 (en) 1989-12-21
IE872671L (en) 1988-04-09
US4731338A (en) 1988-03-15
DE3789187T2 (de) 1994-10-06
CA1277439C (en) 1990-12-04
EP0264222A2 (de) 1988-04-20
KR880005660A (ko) 1988-06-29
DE3789187D1 (de) 1994-04-07
JPS63119591A (ja) 1988-05-24
EP0264222A3 (en) 1989-08-16
EP0264222B1 (de) 1994-03-02
AU7946687A (en) 1988-04-14

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