JPS57159074A - Tunnel type josephson element - Google Patents
Tunnel type josephson elementInfo
- Publication number
- JPS57159074A JPS57159074A JP56043638A JP4363881A JPS57159074A JP S57159074 A JPS57159074 A JP S57159074A JP 56043638 A JP56043638 A JP 56043638A JP 4363881 A JP4363881 A JP 4363881A JP S57159074 A JPS57159074 A JP S57159074A
- Authority
- JP
- Japan
- Prior art keywords
- super conductive
- light
- conductive electrode
- voltage
- tunnel type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
Abstract
PURPOSE:To obtain the tunnel type Josephson element which will have a voltage-existing condition and a zero-voltage condition in accordance with the irradiation and non-irradiation of the beam of light by a method wherein a light- transmitting property is given to a super conductive electrode. CONSTITUTION:In the tunnel type Josephson element having a super conductive electrode 2 provided on a Vycor glass substrate 1 and a super conductive electrode 4 provided oposing the electrode 2 through the intermediary of a barrier layer 3, the property of light transmission is given to these super conductive electrodes 2 and 4. This can be accomplished by having the super conductive electrodes 2 and 4 composed of a light-transmitting material such as BaPb1-xBixO2 (in the form of 0.05<x<0.3), for example, or the electrodes 2 and 4 are formed thinly (0.05mum, for example) so that the light can be transmitted. Subsequently, a laser beam is irradiated through the substrate 1 and the super conductive electrode 2, or through the super conductive electrode 4. Accordingly, the state between the two super conductive electrodes can be changed from a zero-voltage condition to a voltage-existing condition by the irradiation of the laser beam, thereby enabling to obtain a light-controlled type switching element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56043638A JPS57159074A (en) | 1981-03-25 | 1981-03-25 | Tunnel type josephson element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56043638A JPS57159074A (en) | 1981-03-25 | 1981-03-25 | Tunnel type josephson element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57159074A true JPS57159074A (en) | 1982-10-01 |
Family
ID=12669405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56043638A Pending JPS57159074A (en) | 1981-03-25 | 1981-03-25 | Tunnel type josephson element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57159074A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6430279A (en) * | 1987-07-27 | 1989-02-01 | Matsushita Electric Ind Co Ltd | Superconducting device and manufacture thereof |
US4843446A (en) * | 1986-02-27 | 1989-06-27 | Hitachi, Ltd. | Superconducting photodetector |
US5061971A (en) * | 1988-09-22 | 1991-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Bi-based oxide superconducting tunnel junctions and manufacturing method for the same |
US5362709A (en) * | 1988-09-22 | 1994-11-08 | Semiconductor Energy Laboratory, Co., Ltd. | Superconducting device |
US5468973A (en) * | 1990-03-09 | 1995-11-21 | Sumitomo Electric Industries, Ltd. | Stacked Josephson junction device composed of oxide superconductor material |
-
1981
- 1981-03-25 JP JP56043638A patent/JPS57159074A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4843446A (en) * | 1986-02-27 | 1989-06-27 | Hitachi, Ltd. | Superconducting photodetector |
JPS6430279A (en) * | 1987-07-27 | 1989-02-01 | Matsushita Electric Ind Co Ltd | Superconducting device and manufacture thereof |
US5061971A (en) * | 1988-09-22 | 1991-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Bi-based oxide superconducting tunnel junctions and manufacturing method for the same |
US5362709A (en) * | 1988-09-22 | 1994-11-08 | Semiconductor Energy Laboratory, Co., Ltd. | Superconducting device |
US5468973A (en) * | 1990-03-09 | 1995-11-21 | Sumitomo Electric Industries, Ltd. | Stacked Josephson junction device composed of oxide superconductor material |
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