JPS5797648A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5797648A
JPS5797648A JP17434580A JP17434580A JPS5797648A JP S5797648 A JPS5797648 A JP S5797648A JP 17434580 A JP17434580 A JP 17434580A JP 17434580 A JP17434580 A JP 17434580A JP S5797648 A JPS5797648 A JP S5797648A
Authority
JP
Japan
Prior art keywords
protective film
semiconductor device
humidity
laser beam
glassy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17434580A
Other languages
Japanese (ja)
Inventor
Junji Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17434580A priority Critical patent/JPS5797648A/en
Publication of JPS5797648A publication Critical patent/JPS5797648A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make possible a treatment in usual manner to prevent disconnection due to the level difference by forming protective film using hard glass with a high melting poing and a high resistance to humidity, and making the surface glassy by of laser beam irradiation.
CONSTITUTION: A protective film of hard glass with a high resistivity to humidity is formed on a semiconductor device. An electrode contact window is made by patterning on the glass protective film by the ordinary photo lithography technique. Then surface is made glassy by reflow of laser beam radiation.
COPYRIGHT: (C)1982,JPO&Japio
JP17434580A 1980-12-10 1980-12-10 Manufacture of semiconductor device Pending JPS5797648A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17434580A JPS5797648A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17434580A JPS5797648A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5797648A true JPS5797648A (en) 1982-06-17

Family

ID=15977010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17434580A Pending JPS5797648A (en) 1980-12-10 1980-12-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5797648A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5575239A (en) * 1978-12-01 1980-06-06 Fujitsu Ltd Method of fabricating semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5575239A (en) * 1978-12-01 1980-06-06 Fujitsu Ltd Method of fabricating semiconductor device

Similar Documents

Publication Publication Date Title
JPS5536950A (en) Manufacturing of thin film photocell
JPS5734331A (en) Manufacture of semiconductor device
JPS5548926A (en) Preparation of semiconductor device
JPS5797648A (en) Manufacture of semiconductor device
JPS55126480A (en) Recording member
JPS5394770A (en) Photo mask
JPS57167025A (en) Photo mask
JPS5370764A (en) Electrode formation method by lift off method
JPS53105964A (en) Manufacture of semiconductor device
JPS57159074A (en) Tunnel type josephson element
JPS57130451A (en) Formation of multilayer wiring
JPS6477970A (en) Manufacture of photovoltaic device
JPS56130977A (en) Solar battery
JPS52117555A (en) Formation of photo mask
JPS5596681A (en) Method of fabricating semiconductor device
JPS57130450A (en) Formation of multilayer wiring
JPS5421272A (en) Metal photo mask
JPS5360177A (en) Photo mask
JPS57107040A (en) Manufacture of semiconductor device
JPS5453980A (en) Photo conductive target
JPS5351973A (en) Photo mask
JPS5423487A (en) Semiconuctor laser of current stenosing type
JPS57198618A (en) Manufacture of semiconductor device having multiple crystalline layer
JPS5327376A (en) Forming method of high resistanc e layer
JPS57177151A (en) Electrophotographic receptor