JPS5453980A - Photo conductive target - Google Patents

Photo conductive target

Info

Publication number
JPS5453980A
JPS5453980A JP12003477A JP12003477A JPS5453980A JP S5453980 A JPS5453980 A JP S5453980A JP 12003477 A JP12003477 A JP 12003477A JP 12003477 A JP12003477 A JP 12003477A JP S5453980 A JPS5453980 A JP S5453980A
Authority
JP
Japan
Prior art keywords
photo conductive
leading
cdse
evaporated
dark current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12003477A
Other languages
Japanese (ja)
Other versions
JPS5839393B2 (en
Inventor
Okio Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP52120034A priority Critical patent/JPS5839393B2/en
Publication of JPS5453980A publication Critical patent/JPS5453980A/en
Publication of JPS5839393B2 publication Critical patent/JPS5839393B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To improve the residual leading image, by making the dark current of the photo conductive target into a suitable value through the partial contact of two or more insulating materials separately with the photo conductive layer.
CONSTITUTION: The transparent conductive film 2 and CdSe 3 are laminated on the glass plate 1. Next, Sb2S3 is evaporated about 75Å through the mesh mask having suitable opening rate. After that, the mask is removed and As2Se3 7 is evaporated by 1.5 to 2μm, forming the photo conductive targent 8. Thus, since Sb2S3 layer is present in island shape, the residual image at leading can remarkably improved and the leading and the dark current can be controlled with the opening rate of mesh. Further, other than CdSe, the superposition of layers of CdS solid solution or mixture can be effective
COPYRIGHT: (C)1979,JPO&Japio
JP52120034A 1977-10-07 1977-10-07 photoconductive target Expired JPS5839393B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52120034A JPS5839393B2 (en) 1977-10-07 1977-10-07 photoconductive target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52120034A JPS5839393B2 (en) 1977-10-07 1977-10-07 photoconductive target

Publications (2)

Publication Number Publication Date
JPS5453980A true JPS5453980A (en) 1979-04-27
JPS5839393B2 JPS5839393B2 (en) 1983-08-30

Family

ID=14776257

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52120034A Expired JPS5839393B2 (en) 1977-10-07 1977-10-07 photoconductive target

Country Status (1)

Country Link
JP (1) JPS5839393B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110224035A (en) * 2019-05-23 2019-09-10 华中科技大学 A kind of hetero-junctions, preparation method and application

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0423754Y2 (en) * 1984-08-30 1992-06-03

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110224035A (en) * 2019-05-23 2019-09-10 华中科技大学 A kind of hetero-junctions, preparation method and application
CN110224035B (en) * 2019-05-23 2021-02-26 华中科技大学 Heterojunction, preparation method and application thereof

Also Published As

Publication number Publication date
JPS5839393B2 (en) 1983-08-30

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