JPS5575239A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS5575239A
JPS5575239A JP14883778A JP14883778A JPS5575239A JP S5575239 A JPS5575239 A JP S5575239A JP 14883778 A JP14883778 A JP 14883778A JP 14883778 A JP14883778 A JP 14883778A JP S5575239 A JPS5575239 A JP S5575239A
Authority
JP
Japan
Prior art keywords
glass
semiconductor device
wavelength
glass layer
infrared ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14883778A
Other languages
Japanese (ja)
Inventor
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14883778A priority Critical patent/JPS5575239A/en
Publication of JPS5575239A publication Critical patent/JPS5575239A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To avoid the adverse effect of impurity redistribution in a semiconductor device by irradiating to heat the glass layer by infrared ray laser having a wavelength feasibly absorbed to glass in a glass flowing step of a method of fabricating a semiconductor device.
CONSTITUTION: When the wavelength of an infrared ray laser is so selected that the infrared rays are absorbed by a glass layer or as to be near the value, the maximum temperature occurs upon irradiation of the infrared rays in the glass layer from the boundary between a semiconductor crystal and the glass layer. Therefore, it can avoid impurity redistribution by the heat. The glass material adapted for this method includes, for example, silica glass such as PSG, AsSG, BSG or the like glass having a strong absorption band of 9W20μm in wavelength. The most preferable infrared ray laser is a high power CO2 gas laser for continuously oscillating in approx. 10.8μm.
COPYRIGHT: (C)1980,JPO&Japio
JP14883778A 1978-12-01 1978-12-01 Method of fabricating semiconductor device Pending JPS5575239A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14883778A JPS5575239A (en) 1978-12-01 1978-12-01 Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14883778A JPS5575239A (en) 1978-12-01 1978-12-01 Method of fabricating semiconductor device

Publications (1)

Publication Number Publication Date
JPS5575239A true JPS5575239A (en) 1980-06-06

Family

ID=15461833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14883778A Pending JPS5575239A (en) 1978-12-01 1978-12-01 Method of fabricating semiconductor device

Country Status (1)

Country Link
JP (1) JPS5575239A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5797648A (en) * 1980-12-10 1982-06-17 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5797648A (en) * 1980-12-10 1982-06-17 Fujitsu Ltd Manufacture of semiconductor device

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