JPS5575239A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS5575239A JPS5575239A JP14883778A JP14883778A JPS5575239A JP S5575239 A JPS5575239 A JP S5575239A JP 14883778 A JP14883778 A JP 14883778A JP 14883778 A JP14883778 A JP 14883778A JP S5575239 A JPS5575239 A JP S5575239A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- semiconductor device
- wavelength
- glass layer
- infrared ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To avoid the adverse effect of impurity redistribution in a semiconductor device by irradiating to heat the glass layer by infrared ray laser having a wavelength feasibly absorbed to glass in a glass flowing step of a method of fabricating a semiconductor device.
CONSTITUTION: When the wavelength of an infrared ray laser is so selected that the infrared rays are absorbed by a glass layer or as to be near the value, the maximum temperature occurs upon irradiation of the infrared rays in the glass layer from the boundary between a semiconductor crystal and the glass layer. Therefore, it can avoid impurity redistribution by the heat. The glass material adapted for this method includes, for example, silica glass such as PSG, AsSG, BSG or the like glass having a strong absorption band of 9W20μm in wavelength. The most preferable infrared ray laser is a high power CO2 gas laser for continuously oscillating in approx. 10.8μm.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14883778A JPS5575239A (en) | 1978-12-01 | 1978-12-01 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14883778A JPS5575239A (en) | 1978-12-01 | 1978-12-01 | Method of fabricating semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5575239A true JPS5575239A (en) | 1980-06-06 |
Family
ID=15461833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14883778A Pending JPS5575239A (en) | 1978-12-01 | 1978-12-01 | Method of fabricating semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5575239A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5797648A (en) * | 1980-12-10 | 1982-06-17 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1978
- 1978-12-01 JP JP14883778A patent/JPS5575239A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5797648A (en) * | 1980-12-10 | 1982-06-17 | Fujitsu Ltd | Manufacture of semiconductor device |
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