DE68905425D1 - Halbleiteranordnung mit einer steuerelektrode, bestehend aus einer mehrzahl von schichten. - Google Patents

Halbleiteranordnung mit einer steuerelektrode, bestehend aus einer mehrzahl von schichten.

Info

Publication number
DE68905425D1
DE68905425D1 DE8989117743T DE68905425T DE68905425D1 DE 68905425 D1 DE68905425 D1 DE 68905425D1 DE 8989117743 T DE8989117743 T DE 8989117743T DE 68905425 T DE68905425 T DE 68905425T DE 68905425 D1 DE68905425 D1 DE 68905425D1
Authority
DE
Germany
Prior art keywords
control electrode
multiple layer
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989117743T
Other languages
English (en)
Other versions
DE68905425T2 (de
Inventor
Kuniyoshi Intellectu Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE68905425D1 publication Critical patent/DE68905425D1/de
Publication of DE68905425T2 publication Critical patent/DE68905425T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE8989117743T 1988-09-26 1989-09-26 Halbleiteranordnung mit einer steuerelektrode, bestehend aus einer mehrzahl von schichten. Expired - Fee Related DE68905425T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63240002A JP2755613B2 (ja) 1988-09-26 1988-09-26 半導体装置

Publications (2)

Publication Number Publication Date
DE68905425D1 true DE68905425D1 (de) 1993-04-22
DE68905425T2 DE68905425T2 (de) 1993-09-09

Family

ID=17053003

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8989117743T Expired - Fee Related DE68905425T2 (de) 1988-09-26 1989-09-26 Halbleiteranordnung mit einer steuerelektrode, bestehend aus einer mehrzahl von schichten.

Country Status (5)

Country Link
US (1) US5053840A (de)
EP (1) EP0364769B1 (de)
JP (1) JP2755613B2 (de)
KR (1) KR930003560B1 (de)
DE (1) DE68905425T2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304829A (en) * 1989-01-17 1994-04-19 Kabushiki Kaisha Toshiba Nonvolatile semiconductor device
US5087584A (en) * 1990-04-30 1992-02-11 Intel Corporation Process for fabricating a contactless floating gate memory array utilizing wordline trench vias
IT1243303B (it) * 1990-07-24 1994-05-26 Sgs Thomson Microelectronics Schieramento di celle di memoria con linee metalliche di connessione di source e di drain formate sul substrato ed ortogonalmente sovrastate da linee di connessione di gate e procedimento per la sua fabbricazione
JP2893894B2 (ja) * 1990-08-15 1999-05-24 日本電気株式会社 不揮発性メモリ及びその製造方法
JP2793722B2 (ja) * 1991-01-29 1998-09-03 富士通株式会社 不揮発性半導体記憶装置およびその製造方法
US5877054A (en) * 1995-06-29 1999-03-02 Sharp Kabushiki Kaisha Method of making nonvolatile semiconductor memory
EP0752721B1 (de) * 1995-06-29 2009-04-29 Sharp Kabushiki Kaisha Nichtflüchtiger Halbleiterspeicher und Verfahren zur Steuerung und Verfahren zu seiner Herstellung
JP3366173B2 (ja) * 1995-07-31 2003-01-14 シャープ株式会社 不揮発性半導体メモリの製造方法
US5789298A (en) * 1996-11-04 1998-08-04 Advanced Micro Devices, Inc. High performance mosfet structure having asymmetrical spacer formation and method of making the same
US6091100A (en) * 1998-02-06 2000-07-18 Texas Instruments - Acer Incorporated High density NAND structure nonvolatile memories
JP3264241B2 (ja) 1998-02-10 2002-03-11 日本電気株式会社 半導体装置の製造方法
DE19808182C1 (de) * 1998-02-26 1999-08-12 Siemens Ag Elektrisch programmierbare Speicherzellenanordnung und ein Verfahren zu deren Herstellung
US6020606A (en) * 1998-03-20 2000-02-01 United Silicon Incorporated Structure of a memory cell
KR100295136B1 (ko) * 1998-04-13 2001-09-17 윤종용 불휘발성메모리장치및그제조방법
JP3097657B2 (ja) * 1998-05-13 2000-10-10 日本電気株式会社 半導体記憶装置とその製造方法
US6117762A (en) 1999-04-23 2000-09-12 Hrl Laboratories, Llc Method and apparatus using silicide layer for protecting integrated circuits from reverse engineering
US6396368B1 (en) 1999-11-10 2002-05-28 Hrl Laboratories, Llc CMOS-compatible MEM switches and method of making
US6815816B1 (en) 2000-10-25 2004-11-09 Hrl Laboratories, Llc Implanted hidden interconnections in a semiconductor device for preventing reverse engineering
DE10058947A1 (de) * 2000-11-28 2002-07-18 Infineon Technologies Ag Nichtflüchtige NOR-Eintransistor-Halbleiterspeicherzelle sowie dazugehörige Halbleiterspeichereinrichtung, Herstellungsverfahren und Verfahren zu deren Programmierung
DE10062245A1 (de) * 2000-12-14 2002-07-04 Infineon Technologies Ag Nichtflüchtige Halbleiterspeicherzelle sowie dazugehörige Halbleiterschaltungsanordnung und Verfahren zu deren Herstellung
US6791191B2 (en) 2001-01-24 2004-09-14 Hrl Laboratories, Llc Integrated circuits protected against reverse engineering and method for fabricating the same using vias without metal terminations
DE10110150A1 (de) 2001-03-02 2002-09-19 Infineon Technologies Ag Verfahren zum Herstellen von metallischen Bitleitungen für Speicherzellenarrays, Verfahren zum Herstellen von Speicherzellenarrays und Speicherzellenarray
US6774413B2 (en) 2001-06-15 2004-08-10 Hrl Laboratories, Llc Integrated circuit structure with programmable connector/isolator
US6740942B2 (en) 2001-06-15 2004-05-25 Hrl Laboratories, Llc. Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact
KR100485486B1 (ko) * 2002-09-19 2005-04-27 동부아남반도체 주식회사 플래시 메모리 셀의 구조 및 그 제조 방법
US7049667B2 (en) 2002-09-27 2006-05-23 Hrl Laboratories, Llc Conductive channel pseudo block process and circuit to inhibit reverse engineering
US6979606B2 (en) 2002-11-22 2005-12-27 Hrl Laboratories, Llc Use of silicon block process step to camouflage a false transistor
WO2004055868A2 (en) 2002-12-13 2004-07-01 Hrl Laboratories, Llc Integrated circuit modification using well implants
US7242063B1 (en) 2004-06-29 2007-07-10 Hrl Laboratories, Llc Symmetric non-intrusive and covert technique to render a transistor permanently non-operable
US8168487B2 (en) 2006-09-28 2012-05-01 Hrl Laboratories, Llc Programmable connection and isolation of active regions in an integrated circuit using ambiguous features to confuse a reverse engineer
US8754483B2 (en) 2011-06-27 2014-06-17 International Business Machines Corporation Low-profile local interconnect and method of making the same
US9064970B2 (en) 2013-03-15 2015-06-23 Micron Technology, Inc. Memory including blocking dielectric in etch stop tier
US9276011B2 (en) 2013-03-15 2016-03-01 Micron Technology, Inc. Cell pillar structures and integrated flows
US9437604B2 (en) 2013-11-01 2016-09-06 Micron Technology, Inc. Methods and apparatuses having strings of memory cells including a metal source
US9608000B2 (en) * 2015-05-27 2017-03-28 Micron Technology, Inc. Devices and methods including an etch stop protection material

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151021A (en) * 1977-01-26 1979-04-24 Texas Instruments Incorporated Method of making a high density floating gate electrically programmable ROM
US4377818A (en) * 1978-11-02 1983-03-22 Texas Instruments Incorporated High density electrically programmable ROM
US4267632A (en) * 1979-10-19 1981-05-19 Intel Corporation Process for fabricating a high density electrically programmable memory array
JPS59126674A (ja) * 1983-01-10 1984-07-21 Toshiba Corp 情報記憶用半導体装置
JPS60147165A (ja) * 1984-01-12 1985-08-03 Nec Corp 不揮発性半導体メモリセル及びその使用方法
JPS60182174A (ja) * 1984-02-28 1985-09-17 Nec Corp 不揮発性半導体メモリ
US4763177A (en) * 1985-02-19 1988-08-09 Texas Instruments Incorporated Read only memory with improved channel length isolation and method of forming
US4597060A (en) * 1985-05-01 1986-06-24 Texas Instruments Incorporated EPROM array and method for fabricating

Also Published As

Publication number Publication date
EP0364769A3 (en) 1990-05-02
US5053840A (en) 1991-10-01
DE68905425T2 (de) 1993-09-09
EP0364769A2 (de) 1990-04-25
KR900005470A (ko) 1990-04-14
JPH0287578A (ja) 1990-03-28
JP2755613B2 (ja) 1998-05-20
KR930003560B1 (ko) 1993-05-06
EP0364769B1 (de) 1993-03-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee