DE68909929D1 - Photodetektor mit mehrfacher heterostruktur. - Google Patents
Photodetektor mit mehrfacher heterostruktur.Info
- Publication number
- DE68909929D1 DE68909929D1 DE90900935T DE68909929T DE68909929D1 DE 68909929 D1 DE68909929 D1 DE 68909929D1 DE 90900935 T DE90900935 T DE 90900935T DE 68909929 T DE68909929 T DE 68909929T DE 68909929 D1 DE68909929 D1 DE 68909929D1
- Authority
- DE
- Germany
- Prior art keywords
- photodetector
- multiple heterostructure
- heterostructure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB888828348A GB8828348D0 (en) | 1988-12-05 | 1988-12-05 | Photodetector |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68909929D1 true DE68909929D1 (de) | 1993-11-18 |
DE68909929T2 DE68909929T2 (de) | 1994-02-10 |
Family
ID=10647969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE90900935T Expired - Fee Related DE68909929T2 (de) | 1988-12-05 | 1989-11-24 | Photodetektor mit mehrfacher heterostruktur. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5068524A (de) |
EP (1) | EP0401352B1 (de) |
JP (1) | JP2749999B2 (de) |
DE (1) | DE68909929T2 (de) |
ES (1) | ES2044550T3 (de) |
GB (2) | GB8828348D0 (de) |
WO (1) | WO1990006597A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5459321A (en) * | 1990-12-26 | 1995-10-17 | The United States Of America As Represented By The Secretary Of The Navy | Laser hardened backside illuminated optical detector |
GB9100351D0 (en) * | 1991-01-08 | 1991-02-20 | Secr Defence | Semiconductor heterostructure device |
US5374841A (en) * | 1991-12-18 | 1994-12-20 | Texas Instruments Incorporated | HgCdTe S-I-S two color infrared detector |
US5457331A (en) * | 1993-04-08 | 1995-10-10 | Santa Barbara Research Center | Dual-band infrared radiation detector optimized for fabrication in compositionally graded HgCdTe |
US5466953A (en) * | 1993-05-28 | 1995-11-14 | Santa Barbara Research Center | Denuded zone field effect photoconductive detector |
DE4344252A1 (de) * | 1993-12-23 | 1995-06-29 | Siemens Ag | Röntgendetektorelement mit Direktkonversion |
USRE38582E1 (en) | 1995-10-05 | 2004-09-14 | Qinetiq Limited | Semiconductor diode with suppression of auger generation processes |
GB9520324D0 (en) * | 1995-10-05 | 1995-12-06 | Secr Defence | Improved auger suppressed device |
FR2833757B1 (fr) * | 2001-12-13 | 2004-11-05 | Commissariat Energie Atomique | Dispositif d'emission de lumiere et procede de fabrication d'un tel dispositif |
US6906358B2 (en) * | 2003-01-30 | 2005-06-14 | Epir Technologies, Inc. | Nonequilibrium photodetector with superlattice exclusion layer |
US7202511B2 (en) | 2003-08-21 | 2007-04-10 | Drs Sensors & Targeting Systems, Inc. | Near-infrared visible light photon counter |
FR2879818B1 (fr) * | 2004-12-17 | 2007-04-20 | Commissariat Energie Atomique | Photodetecteur a semi-conducteur, dispositif de detection multi-spectrale d'un rayonnement electromagnetique mettant en oeuvre un tel photodetecteur, et procede de mise en oeuvre d'un tel dispositif |
US7459730B1 (en) * | 2005-09-20 | 2008-12-02 | Drs Sensors & Targeting Systems, Inc. | Separate absorption and detection diode for VLWIR |
US7652252B1 (en) * | 2007-10-08 | 2010-01-26 | Hrl Laboratories, Llc | Electronically tunable and reconfigurable hyperspectral photon detector |
WO2010132056A1 (en) | 2009-05-14 | 2010-11-18 | Neoprobe Corporation | Stacked crystal array for detection of photon emissions |
TWI478406B (zh) | 2010-09-11 | 2015-03-21 | Peter Milon Orem | 來自熱度之電源產生之裝置,系統及方法 |
US8957298B2 (en) | 2010-09-11 | 2015-02-17 | Peter Milon Orem | Apparatus, systems and methods for electrical power generation from heat |
US9929291B2 (en) | 2014-02-06 | 2018-03-27 | Raytheon Company | Photo-detector having plasmonic resonance and photon crystal thermal noise suppression |
CN116130561B (zh) * | 2023-04-14 | 2023-06-27 | 山西创芯光电科技有限公司 | 一种超晶格红外探测器的制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2225733B1 (de) * | 1973-04-12 | 1976-05-21 | Telecommunications Sa | |
US4137544A (en) * | 1977-07-05 | 1979-01-30 | Honeywell Inc. | Mercury cadmium telluride photodiode |
US4399448A (en) * | 1981-02-02 | 1983-08-16 | Bell Telephone Laboratories, Incorporated | High sensitivity photon feedback photodetectors |
EP0106514B1 (de) * | 1982-09-23 | 1989-03-15 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Infrarotdetektor |
JPS5984467A (ja) * | 1982-11-06 | 1984-05-16 | Mitsubishi Electric Corp | モノリシツク赤外線電荷転送素子 |
GB8417303D0 (en) * | 1984-07-06 | 1984-08-08 | Secr Defence | Infra-red detector |
FR2592740B1 (fr) * | 1986-01-08 | 1988-03-18 | Commissariat Energie Atomique | Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication |
US4776894A (en) * | 1986-08-18 | 1988-10-11 | Sanyo Electric Co., Ltd. | Photovoltaic device |
-
1988
- 1988-12-05 GB GB888828348A patent/GB8828348D0/en active Pending
-
1989
- 1989-11-24 ES ES90900935T patent/ES2044550T3/es not_active Expired - Lifetime
- 1989-11-24 WO PCT/GB1989/001406 patent/WO1990006597A1/en active IP Right Grant
- 1989-11-24 EP EP90900935A patent/EP0401352B1/de not_active Expired - Lifetime
- 1989-11-24 US US07/571,587 patent/US5068524A/en not_active Expired - Lifetime
- 1989-11-24 DE DE90900935T patent/DE68909929T2/de not_active Expired - Fee Related
- 1989-11-24 JP JP2501099A patent/JP2749999B2/ja not_active Expired - Fee Related
- 1989-11-24 GB GB9017113A patent/GB2232816B/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ES2044550T3 (es) | 1994-01-01 |
GB2232816A (en) | 1990-12-19 |
EP0401352B1 (de) | 1993-10-13 |
WO1990006597A1 (en) | 1990-06-14 |
GB8828348D0 (en) | 1989-01-05 |
GB2232816B (en) | 1992-11-04 |
US5068524A (en) | 1991-11-26 |
JPH03503226A (ja) | 1991-07-18 |
GB9017113D0 (en) | 1990-09-19 |
EP0401352A1 (de) | 1990-12-12 |
DE68909929T2 (de) | 1994-02-10 |
JP2749999B2 (ja) | 1998-05-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: QINETIQ LTD., LONDON, GB |
|
8339 | Ceased/non-payment of the annual fee |