ID27122A - Bubur pemoles mekanik kimia yang berguna untuk substrat tembaga - Google Patents
Bubur pemoles mekanik kimia yang berguna untuk substrat tembagaInfo
- Publication number
- ID27122A ID27122A IDW20002093A ID20002093A ID27122A ID 27122 A ID27122 A ID 27122A ID W20002093 A IDW20002093 A ID W20002093A ID 20002093 A ID20002093 A ID 20002093A ID 27122 A ID27122 A ID 27122A
- Authority
- ID
- Indonesia
- Prior art keywords
- bubur
- chemical mechanical
- copper substrates
- users
- policy users
- Prior art date
Links
- 239000000126 substance Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/040,630 US6432828B2 (en) | 1998-03-18 | 1998-03-18 | Chemical mechanical polishing slurry useful for copper substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
ID27122A true ID27122A (id) | 2001-03-01 |
Family
ID=21912052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IDW20002093A ID27122A (id) | 1998-03-18 | 1999-03-18 | Bubur pemoles mekanik kimia yang berguna untuk substrat tembaga |
Country Status (12)
Country | Link |
---|---|
US (3) | US6432828B2 (de) |
EP (1) | EP1064338B1 (de) |
JP (3) | JP2002506915A (de) |
KR (1) | KR100594561B1 (de) |
CN (1) | CN1157450C (de) |
AU (1) | AU3100499A (de) |
CA (1) | CA2324151A1 (de) |
DE (1) | DE69933015T2 (de) |
ID (1) | ID27122A (de) |
IL (1) | IL138483A0 (de) |
TW (1) | TWI256966B (de) |
WO (1) | WO1999047618A1 (de) |
Families Citing this family (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6126853A (en) * | 1996-12-09 | 2000-10-03 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US6432828B2 (en) * | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
JP4608925B2 (ja) * | 1998-12-25 | 2011-01-12 | 日立化成工業株式会社 | Cmp研磨剤用添加液 |
DE19927286B4 (de) * | 1999-06-15 | 2011-07-28 | Qimonda AG, 81739 | Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche |
US6419554B2 (en) * | 1999-06-24 | 2002-07-16 | Micron Technology, Inc. | Fixed abrasive chemical-mechanical planarization of titanium nitride |
WO2001012739A1 (en) * | 1999-08-13 | 2001-02-22 | Cabot Microelectronics Corporation | Chemical mechanical polishing systems and methods for their use |
TWI254070B (en) * | 1999-08-18 | 2006-05-01 | Jsr Corp | Aqueous dispersion for chemical mechanical polishing |
US6347978B1 (en) | 1999-10-22 | 2002-02-19 | Cabot Microelectronics Corporation | Composition and method for polishing rigid disks |
JP3602393B2 (ja) * | 1999-12-28 | 2004-12-15 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
JP2001187877A (ja) * | 1999-12-28 | 2001-07-10 | Nec Corp | 化学的機械的研磨用スラリー |
US6443811B1 (en) * | 2000-06-20 | 2002-09-03 | Infineon Technologies Ag | Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishing |
US7074113B1 (en) | 2000-08-30 | 2006-07-11 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
US7129160B2 (en) * | 2002-08-29 | 2006-10-31 | Micron Technology, Inc. | Method for simultaneously removing multiple conductive materials from microelectronic substrates |
US7153410B2 (en) * | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces |
US7078308B2 (en) | 2002-08-29 | 2006-07-18 | Micron Technology, Inc. | Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate |
US7220166B2 (en) * | 2000-08-30 | 2007-05-22 | Micron Technology, Inc. | Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate |
US7192335B2 (en) * | 2002-08-29 | 2007-03-20 | Micron Technology, Inc. | Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates |
US7094131B2 (en) * | 2000-08-30 | 2006-08-22 | Micron Technology, Inc. | Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material |
US7112121B2 (en) * | 2000-08-30 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate |
US7153195B2 (en) * | 2000-08-30 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatus for selectively removing conductive material from a microelectronic substrate |
US7134934B2 (en) * | 2000-08-30 | 2006-11-14 | Micron Technology, Inc. | Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium |
US7160176B2 (en) | 2000-08-30 | 2007-01-09 | Micron Technology, Inc. | Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate |
KR100370160B1 (ko) * | 2000-10-27 | 2003-01-30 | 주식회사 하이닉스반도체 | 반도체 소자의 텅스텐 플러그 형성방법 |
DE10060343A1 (de) * | 2000-12-04 | 2002-06-06 | Bayer Ag | Polierslurry für das chemisch-mechanische Polieren von Metall- und Dielektrikastrukturen |
US6540935B2 (en) * | 2001-04-05 | 2003-04-01 | Samsung Electronics Co., Ltd. | Chemical/mechanical polishing slurry, and chemical mechanical polishing process and shallow trench isolation process employing the same |
US6632259B2 (en) * | 2001-05-18 | 2003-10-14 | Rodel Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
US6783432B2 (en) * | 2001-06-04 | 2004-08-31 | Applied Materials Inc. | Additives for pressure sensitive polishing compositions |
US20040011991A1 (en) * | 2001-06-13 | 2004-01-22 | Markle Richard J. | Use of a gettering agent in a chemical mechanical polishing and rinsing operation and apparatus therefor |
US6627546B2 (en) * | 2001-06-29 | 2003-09-30 | Ashland Inc. | Process for removing contaminant from a surface and composition useful therefor |
US6589099B2 (en) * | 2001-07-09 | 2003-07-08 | Motorola, Inc. | Method for chemical mechanical polishing (CMP) with altering the concentration of oxidizing agent in slurry |
US6953389B2 (en) * | 2001-08-09 | 2005-10-11 | Cheil Industries, Inc. | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
TW591089B (en) * | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
CN1306562C (zh) * | 2001-10-26 | 2007-03-21 | 旭硝子株式会社 | 研磨剂、研磨剂的制造方法以及研磨方法 |
US20050050803A1 (en) | 2001-10-31 | 2005-03-10 | Jin Amanokura | Polishing fluid and polishing method |
KR100442962B1 (ko) * | 2001-12-26 | 2004-08-04 | 주식회사 하이닉스반도체 | 반도체소자의 금속배선 콘택플러그 형성방법 |
US7025659B2 (en) | 2002-01-14 | 2006-04-11 | Hitachi Global Storage Technologies Netherlands B.V. | Simultaneous planarization of pole piece and coil materials for write head applications |
TWI282360B (en) * | 2002-06-03 | 2007-06-11 | Hitachi Chemical Co Ltd | Polishing composition and polishing method thereof |
US6858531B1 (en) | 2002-07-12 | 2005-02-22 | Lsi Logic Corporation | Electro chemical mechanical polishing method |
JP4083502B2 (ja) * | 2002-08-19 | 2008-04-30 | 株式会社フジミインコーポレーテッド | 研磨方法及びそれに用いられる研磨用組成物 |
JP3981616B2 (ja) * | 2002-10-02 | 2007-09-26 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US20040074517A1 (en) * | 2002-10-22 | 2004-04-22 | Texas Instruments Incorporated | Surfactants for chemical mechanical polishing |
US6899597B2 (en) * | 2003-01-29 | 2005-05-31 | Infineon Technologies Ag | Chemical mechanical polishing (CMP) process using fixed abrasive pads |
WO2004090937A2 (en) * | 2003-04-10 | 2004-10-21 | Technion Research & Development Foundation Ltd | Copper cmp slurry composition |
US20040259366A1 (en) * | 2003-06-20 | 2004-12-23 | Kim Seong Han | Method and composition for the chemical-vibrational-mechanical planarization of copper |
KR101072342B1 (ko) * | 2003-06-30 | 2011-10-11 | 동우 화인켐 주식회사 | 구리의 화학적 기계적 연마를 위한 슬러리 조성물 |
US7112122B2 (en) * | 2003-09-17 | 2006-09-26 | Micron Technology, Inc. | Methods and apparatus for removing conductive material from a microelectronic substrate |
DE602004026454D1 (de) * | 2003-09-30 | 2010-05-20 | Fujimi Inc | Polierzusammensetzung und polierverfahren |
US20060172526A1 (en) * | 2003-10-16 | 2006-08-03 | United Microelectronics Corp. | Method for preventing edge peeling defect |
US20050085163A1 (en) * | 2003-10-16 | 2005-04-21 | United Microelectronics Corp. | Method for preventing edge peeling defect |
US20050136671A1 (en) * | 2003-12-22 | 2005-06-23 | Goldberg Wendy B. | Compositions and methods for low downforce pressure polishing of copper |
US7153777B2 (en) * | 2004-02-20 | 2006-12-26 | Micron Technology, Inc. | Methods and apparatuses for electrochemical-mechanical polishing |
JP2005244123A (ja) | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
JP2005268666A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
JP2005268664A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
JP4316406B2 (ja) * | 2004-03-22 | 2009-08-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US7497967B2 (en) * | 2004-03-24 | 2009-03-03 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Compositions and methods for polishing copper |
US20050211950A1 (en) * | 2004-03-24 | 2005-09-29 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
JP4644434B2 (ja) * | 2004-03-24 | 2011-03-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US7253111B2 (en) * | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
US20050279964A1 (en) * | 2004-06-17 | 2005-12-22 | Ming-Tseh Tsay | Chemical mechanical polishing slurry for polishing copper layer on a wafer |
US7384871B2 (en) * | 2004-07-01 | 2008-06-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
US7303993B2 (en) * | 2004-07-01 | 2007-12-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing compositions and methods relating thereto |
US7566391B2 (en) | 2004-09-01 | 2009-07-28 | Micron Technology, Inc. | Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media |
JP2006086462A (ja) * | 2004-09-17 | 2006-03-30 | Fujimi Inc | 研磨用組成物およびそれを用いた配線構造体の製造法 |
US7524347B2 (en) | 2004-10-28 | 2009-04-28 | Cabot Microelectronics Corporation | CMP composition comprising surfactant |
JP2006135072A (ja) * | 2004-11-05 | 2006-05-25 | Fujimi Inc | 研磨方法 |
US7435356B2 (en) * | 2004-11-24 | 2008-10-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Abrasive-free chemical mechanical polishing compositions and methods relating thereto |
US7086935B2 (en) * | 2004-11-24 | 2006-08-08 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cellulose-containing polishing compositions and methods relating thereto |
US7427362B2 (en) * | 2005-01-26 | 2008-09-23 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Corrosion-resistant barrier polishing solution |
JP4469737B2 (ja) * | 2005-02-10 | 2010-05-26 | 株式会社東芝 | 半導体装置の製造方法 |
CN1854234B (zh) | 2005-04-21 | 2013-03-20 | 安集微电子(上海)有限公司 | 抛光浆料及其用途和使用方法 |
JP2006339594A (ja) * | 2005-06-06 | 2006-12-14 | Seimi Chem Co Ltd | 半導体用研磨剤 |
US7718536B2 (en) * | 2005-06-16 | 2010-05-18 | United Microelectronics Corp. | Planarization process for pre-damascene structure including metal hard mask |
JP5026710B2 (ja) * | 2005-09-02 | 2012-09-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
TWI397577B (zh) * | 2005-09-02 | 2013-06-01 | Fujimi Inc | 研磨用組成物 |
US7435162B2 (en) * | 2005-10-24 | 2008-10-14 | 3M Innovative Properties Company | Polishing fluids and methods for CMP |
US20070179072A1 (en) * | 2006-01-30 | 2007-08-02 | Rao Madhukar B | Cleaning formulations |
SG139699A1 (en) * | 2006-08-02 | 2008-02-29 | Fujimi Inc | Polishing composition and polishing process |
US20080029126A1 (en) * | 2006-08-07 | 2008-02-07 | Thomas Terence M | Compositions and methods for improved planarization of copper utilizing inorganic oxide abrasive |
US8057561B2 (en) * | 2006-09-11 | 2011-11-15 | Cabot Microelectronics Corporation | Polyoxometalate compositions and methods |
KR101050136B1 (ko) * | 2006-11-20 | 2011-07-19 | 주식회사 엘지화학 | 유기용매를 이용한 산화세륨 분말의 제조방법 및 상기분말을 포함하는cmp슬러리 |
JP2009164186A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
JP2009164188A (ja) * | 2007-12-28 | 2009-07-23 | Fujimi Inc | 研磨用組成物 |
US7922926B2 (en) | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
CN101235255B (zh) * | 2008-03-07 | 2011-08-24 | 大连理工大学 | 一种化学机械抛光半导体晶片用的抛光液 |
JP5819036B2 (ja) * | 2008-03-25 | 2015-11-18 | 三井金属鉱業株式会社 | セリウム系研摩材スラリー |
CN101302403B (zh) * | 2008-07-03 | 2011-10-19 | 大连理工大学 | 用于大尺寸金刚石晶圆超精密低损伤抛光的抛光液及制备方法 |
US8506661B2 (en) * | 2008-10-24 | 2013-08-13 | Air Products & Chemicals, Inc. | Polishing slurry for copper films |
JP5449397B2 (ja) * | 2008-12-20 | 2014-03-19 | キャボット マイクロエレクトロニクス コーポレイション | ワイヤーソー切断法 |
TWI371481B (en) * | 2009-04-02 | 2012-09-01 | Uwiz Technology Co Ltd | Slurry composition and method of fabricating damascene structure using the same |
US8551887B2 (en) | 2009-12-22 | 2013-10-08 | Air Products And Chemicals, Inc. | Method for chemical mechanical planarization of a copper-containing substrate |
JP5587620B2 (ja) * | 2010-01-25 | 2014-09-10 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
CN102373014A (zh) * | 2010-08-24 | 2012-03-14 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
JP2012121086A (ja) * | 2010-12-07 | 2012-06-28 | Yokkaichi Chem Co Ltd | 研磨用添加剤及び高分散性研磨スラリー |
CN102559057A (zh) * | 2010-12-16 | 2012-07-11 | 安集微电子(上海)有限公司 | 一种含有机酸性物质的化学机械抛光液 |
CN102533122B (zh) * | 2010-12-28 | 2016-01-20 | 安集微电子(上海)有限公司 | 一种用于抛光含钛基材的抛光浆料 |
TWI605112B (zh) * | 2011-02-21 | 2017-11-11 | Fujimi Inc | 研磨用組成物 |
US8980122B2 (en) | 2011-07-08 | 2015-03-17 | General Engineering & Research, L.L.C. | Contact release capsule useful for chemical mechanical planarization slurry |
US9567678B2 (en) | 2011-08-29 | 2017-02-14 | Massachusetts Institute Of Technology | Methods and systems for carrying out a pH-influenced chemical and/or biological reaction |
US9302219B2 (en) | 2011-08-29 | 2016-04-05 | Massachusetts Institute Of Technology | Methods and systems for carrying out a pH-influenced chemical and/or biological reaction |
US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
US9752057B2 (en) * | 2014-02-05 | 2017-09-05 | Cabot Microelectronics Corporation | CMP method for suppression of titanium nitride and titanium/titanium nitride removal |
CN105320782B (zh) * | 2014-06-16 | 2019-06-21 | 复旦大学 | 一种考虑抛光液影响的特征尺寸级化学机械抛光工艺仿真方法 |
WO2016054519A1 (en) * | 2014-10-03 | 2016-04-07 | Massachusetts Institute Of Technology | Methods and systems for carrying out a ph-influenced chemical and/or biological reaction |
CN104312441B (zh) * | 2014-10-29 | 2017-11-10 | 安阳方圆研磨材料有限责任公司 | 硅铈抛光液及其制备方法 |
JP7057662B2 (ja) * | 2017-12-26 | 2022-04-20 | ニッタ・デュポン株式会社 | 研磨組成物、及び、研磨速度を調整する方法 |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3385682A (en) | 1965-04-29 | 1968-05-28 | Sprague Electric Co | Method and reagent for surface polishing |
GB1198312A (en) | 1967-07-22 | 1970-07-08 | Geigy Uk Ltd | Corrosion Inhibiting Chemical Compositions |
JPS49109223A (de) | 1973-02-21 | 1974-10-17 | ||
SE400581B (sv) | 1974-12-13 | 1978-04-03 | Nordnero Ab | Bad for kemisk polering av koppar och dess legeringar |
DE2847267C2 (de) | 1978-10-31 | 1993-12-23 | Decker Gmbh & Co Kg Geb | Stabilisator für eine wäßrige Lösung zum Beizen und/oder chemischen Glänzen von Gegenständen aus Kupfer oder Kupferlegierungen in einem mehrstufigen Verfahren und Verwendung des Stabilisators |
US4944836A (en) | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
US4671851A (en) | 1985-10-28 | 1987-06-09 | International Business Machines Corporation | Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique |
US4789648A (en) | 1985-10-28 | 1988-12-06 | International Business Machines Corporation | Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias |
US4956313A (en) | 1987-08-17 | 1990-09-11 | International Business Machines Corporation | Via-filling and planarization technique |
US4910155A (en) | 1988-10-28 | 1990-03-20 | International Business Machines Corporation | Wafer flood polishing |
US5244523A (en) | 1990-02-07 | 1993-09-14 | Tollini Dennis R | Bandage for replaceable dressing and method of fabrication thereof |
US5157876A (en) | 1990-04-10 | 1992-10-27 | Rockwell International Corporation | Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing |
US5137544A (en) | 1990-04-10 | 1992-08-11 | Rockwell International Corporation | Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing |
US5209816A (en) | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
US5225034A (en) | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
US5575837A (en) * | 1993-04-28 | 1996-11-19 | Fujimi Incorporated | Polishing composition |
US5391258A (en) | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
US5407526A (en) | 1993-06-30 | 1995-04-18 | Intel Corporation | Chemical mechanical polishing slurry delivery and mixing system |
US5340370A (en) | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
US5575885A (en) * | 1993-12-14 | 1996-11-19 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing semiconductor device |
JP3397501B2 (ja) | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
US5478435A (en) | 1994-12-16 | 1995-12-26 | National Semiconductor Corp. | Point of use slurry dispensing system |
US6046110A (en) * | 1995-06-08 | 2000-04-04 | Kabushiki Kaisha Toshiba | Copper-based metal polishing solution and method for manufacturing a semiconductor device |
US5700383A (en) | 1995-12-21 | 1997-12-23 | Intel Corporation | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide |
US5858813A (en) | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
US5993686A (en) | 1996-06-06 | 1999-11-30 | Cabot Corporation | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
WO1998004646A1 (en) | 1996-07-25 | 1998-02-05 | Ekc Technology, Inc. | Chemical mechanical polishing composition and process |
JP3507628B2 (ja) * | 1996-08-06 | 2004-03-15 | 昭和電工株式会社 | 化学的機械研磨用研磨組成物 |
US6039891A (en) * | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
US5783489A (en) * | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US6033596A (en) * | 1996-09-24 | 2000-03-07 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US5958288A (en) * | 1996-11-26 | 1999-09-28 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6068787A (en) | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
US6309560B1 (en) | 1996-12-09 | 2001-10-30 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US5735963A (en) | 1996-12-17 | 1998-04-07 | Lucent Technologies Inc. | Method of polishing |
US5922091A (en) | 1997-05-16 | 1999-07-13 | National Science Council Of Republic Of China | Chemical mechanical polishing slurry for metallic thin film |
US6432828B2 (en) * | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
US6063306A (en) | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
-
1998
- 1998-03-18 US US09/040,630 patent/US6432828B2/en not_active Expired - Lifetime
-
1999
- 1999-03-18 KR KR1020007010286A patent/KR100594561B1/ko not_active IP Right Cessation
- 1999-03-18 CN CNB99806193XA patent/CN1157450C/zh not_active Expired - Lifetime
- 1999-03-18 IL IL13848399A patent/IL138483A0/xx unknown
- 1999-03-18 EP EP99912683A patent/EP1064338B1/de not_active Expired - Lifetime
- 1999-03-18 WO PCT/US1999/005968 patent/WO1999047618A1/en active IP Right Grant
- 1999-03-18 ID IDW20002093A patent/ID27122A/id unknown
- 1999-03-18 AU AU31004/99A patent/AU3100499A/en not_active Abandoned
- 1999-03-18 JP JP2000536803A patent/JP2002506915A/ja active Pending
- 1999-03-18 CA CA002324151A patent/CA2324151A1/en not_active Abandoned
- 1999-03-18 TW TW088104239A patent/TWI256966B/zh not_active IP Right Cessation
- 1999-03-18 DE DE69933015T patent/DE69933015T2/de not_active Expired - Lifetime
-
2002
- 2002-05-14 US US10/145,357 patent/US6620037B2/en not_active Expired - Lifetime
-
2003
- 2003-07-09 US US10/616,335 patent/US7381648B2/en not_active Expired - Lifetime
-
2007
- 2007-01-17 JP JP2007008250A patent/JP2007150341A/ja not_active Withdrawn
-
2011
- 2011-08-12 JP JP2011176512A patent/JP5539934B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20040009671A1 (en) | 2004-01-15 |
JP2002506915A (ja) | 2002-03-05 |
US7381648B2 (en) | 2008-06-03 |
EP1064338B1 (de) | 2006-08-30 |
EP1064338A1 (de) | 2001-01-03 |
IL138483A0 (en) | 2001-10-31 |
CN1157450C (zh) | 2004-07-14 |
JP2007150341A (ja) | 2007-06-14 |
KR100594561B1 (ko) | 2006-06-30 |
DE69933015D1 (de) | 2006-10-12 |
TWI256966B (en) | 2006-06-21 |
CA2324151A1 (en) | 1999-09-23 |
US6432828B2 (en) | 2002-08-13 |
DE69933015T2 (de) | 2006-12-14 |
JP5539934B2 (ja) | 2014-07-02 |
US6620037B2 (en) | 2003-09-16 |
WO1999047618A1 (en) | 1999-09-23 |
CN1301288A (zh) | 2001-06-27 |
JP2012004588A (ja) | 2012-01-05 |
AU3100499A (en) | 1999-10-11 |
KR20010041962A (ko) | 2001-05-25 |
US20020168923A1 (en) | 2002-11-14 |
US20010049910A1 (en) | 2001-12-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ID27122A (id) | Bubur pemoles mekanik kimia yang berguna untuk substrat tembaga | |
ID28618A (id) | Bubur pemoles mekanik kimia yang berguna bagi substrat tembaga/tantalum. | |
ID26088A (id) | Komposisi-komposisi sampo yang mengandung silikon | |
DE69926112D1 (de) | Flexibles substrat | |
HK1040214A1 (zh) | 半導體基版之表面處理 | |
EP1118880A4 (de) | Verfahren zur organischen filmabscheidung | |
DE60024707D1 (de) | Reinigungslösung für Substraten von elektronischen Anordnungen | |
ID25720A (id) | Pelarutan gas yang ditingkatkan | |
EP1029954A4 (de) | Substratbeschichtungsvorrichtung | |
GB0126467D0 (en) | Deposition of coatings on substrates | |
FR2787440B1 (fr) | Substrat transparent comportant un revetement antireflet | |
ID27289A (id) | Penggunaan yang baru | |
ID28183A (id) | Komposisi-komposisi pembersih makanan yang mengandung siklodekstrin | |
GB0121155D0 (en) | Treatment of substrates | |
GB9819382D0 (en) | Chemical compounds I | |
EP1061157A4 (de) | Substratbeschichtungsvorrichtung | |
DE69937868D1 (de) | Vereinfachtes Induktivitätssubstrat mit hohem Q | |
DE60205203D1 (de) | Verwaltung von OSI-Schicht-3 Datennetzeinheiten | |
SG84536A1 (en) | Plating method of hard disk substrate | |
EP1048756A4 (de) | Vorrichtung zur plattierung von substraten | |
GB0103553D0 (en) | Substrate treatment | |
ID20492A (id) | Alat penyerap embun untuk peralatan listrik yang berisi gas dielektrik | |
SG74750A1 (en) | The solution of copper compound for the copper film deposition from chemical vapor deposition and the method of synthesis | |
DE60203427D1 (de) | Behandlung von metallischen Substraten mit (per)fluoropolyätherverbindungen | |
DE69837251D1 (de) | Elektrochemische Abscheidung von Metallen in Halbleiteranordnungen |