JP5449397B2 - ワイヤーソー切断法 - Google Patents
ワイヤーソー切断法 Download PDFInfo
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- JP5449397B2 JP5449397B2 JP2011542532A JP2011542532A JP5449397B2 JP 5449397 B2 JP5449397 B2 JP 5449397B2 JP 2011542532 A JP2011542532 A JP 2011542532A JP 2011542532 A JP2011542532 A JP 2011542532A JP 5449397 B2 JP5449397 B2 JP 5449397B2
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- cutting fluid
- cutting
- wire saw
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- wire
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/007—Use, recovery or regeneration of abrasive mediums
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Lubricants (AREA)
Description
寸法125mm×125mm×45mmを有する多結晶シリコンインゴットを、Myer-Burger 261ワイヤーソーで切断した。この切断プロセスは、50%の炭化ケイ素、42%の水、2%の増粘剤、6%の抗乾燥剤、20ppmの、ロームアンドハース社(Rohm and Haas Company)からKATHON(登録商標)として入手可能な殺生物剤系保存料、および0.25%の、Air Products and Chemicals, Inc.から入手可能な消泡性界面活性剤、SURFYNOL(登録商標)420(全てのパーセントは質量基準である)を含む切断用流体を用いて行なった。
Claims (11)
- 水性切断用流体を、切断用流体の再循環貯蔵器から、ワイヤーソーへと適用しながら、ワイヤーソーで加工品を切断すること;該加工品を切断しながら、該切断用流体の化学的および物理的性質を監視すること;および該切断用流体の化学薬品成分を、切断速度および切断品質を予め定められた範囲内に維持するのに十分な量で加えることによって、監視されている該性質の水準を、予め定められた範囲に維持する、もしくは回復するように、該切断用流体の化学薬品組成を調整すること、を含んでなり、
加えられる該化学薬品が、疎水性界面活性剤、酸化剤、消泡剤、増粘剤、腐食抑制剤、抗乾燥剤、酸または塩基からなる群から選ばれる、
ワイヤーソー切断方法。 - 前記加えられる化学薬品が、消泡剤であり、かつ該消泡剤がシリコーンを含む、請求項1記載の方法。
- 前記加えられる化学薬品が、消泡剤であり、かつ該消泡剤がC8−C22アルコールを含む、請求項1記載の方法。
- 前記加えられる化学薬品が、増粘剤であり、かつ該増粘剤がセルロース化合物を含む、請求項1記載の方法。
- 前記加えられる化学薬品が、増粘剤であり、かつ該増粘剤がアクリレートポリマーを含む、請求項1記載の方法。
- 前記加えられる化学薬品が、腐食抑制剤であり、該腐食抑制剤がリン酸アルキルまたはアミノ化合物を含む、請求項1記載の方法。
- 前記加えられる化学薬品が、抗乾燥剤であり、かつ該抗乾燥剤がアルコールを含む、請求項1記載の方法。
- 前記加えられる化学薬品が、抗乾燥剤であり、かつ該抗乾燥剤が塩を含む、請求項1記載の方法。
- 前記監視されている性質が、粘度、pH、密度、泡の高さ、ワイヤー張力、固形分パーセント、水素発生量、前記切断用流体の温度、前記切断用流体の化学薬品成分、または水性担体の光学的性質からなる群から選ばれる、請求項1記載の方法。
- 加工品を保持するように適用される取付台および支持体ヘッド;ワイヤーソーであって、操作時に該加工品が該ワイヤーソーと接触することができるように該取付台および支持体ヘッドに対して配置されたワイヤーソー;ワイヤーソー切断用流体を、再循環切断用流体分配システムから該ワイヤーソーに適用するための適用領域であって、該適用領域は、切断用流体を該ワイヤーソーへと分配するように配置および適用されており、該再循環切断用流体分配システムは、切断用流体流動経路を規定している、適用領域;切断用流体を該ワイヤーソーおよび取り付けられた加工品に向けるように、かつ該再循環切断用流体分配システムに戻るように適用されたワイヤーソー切断用流体出口領域;切断プロセスの間に、該切断用流体の1種もしくは2種以上の化学的および物理的性質を監視するために、該切断用流体の試料を得るための試料採取配管、あるいは該切断用流体の1種もしくは2種以上の化学的および物理的性質を監視するように適用されたセンサー、あるいは試料採取配管とセンサー、を含む該再循環分配システム;ならびに監視されている性質の水準を、予め定められた範囲内に維持もしくは回復するために、該切断用流体の化学薬品成分を、切断速度および切断品質を予め定められた範囲内に維持するのに十分な量で加えることによって、該切断用流体の化学薬品組成を調整するように、監視に応答して該再循環切断用流体中に化学薬品を導入するように適用された化学薬品添加剤供給配管、を含んでなり、加えられる該化学薬品が、疎水性界面活性剤、酸化剤、消泡剤、増粘剤、腐食抑制剤、抗乾燥剤、酸または塩基からなる群から選ばれるワイヤーソー切断装置。
- 前記監視されている性質が、粘度、pH、密度、泡の高さ、ワイヤー張力、固形分パーセント、水素発生量、前記切断用流体の温度、前記切断用流体の化学薬品成分、または水性担体の光学的性質からなる群から選ばれる、請求項10記載の装置。
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US20314208P | 2008-12-20 | 2008-12-20 | |
US61/203,142 | 2008-12-20 | ||
PCT/US2009/068926 WO2010071873A2 (en) | 2008-12-20 | 2009-12-21 | Wiresaw cutting method |
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JP5449397B2 true JP5449397B2 (ja) | 2014-03-19 |
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EP (1) | EP2377147A2 (ja) |
JP (1) | JP5449397B2 (ja) |
KR (1) | KR101428152B1 (ja) |
CN (1) | CN102257604B (ja) |
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MY (1) | MY153330A (ja) |
SG (1) | SG172286A1 (ja) |
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KR20110099135A (ko) | 2011-09-06 |
CN102257604A (zh) | 2011-11-23 |
US20110303210A1 (en) | 2011-12-15 |
TW201032924A (en) | 2010-09-16 |
SG172286A1 (en) | 2011-07-28 |
IL213229A (en) | 2015-04-30 |
EP2377147A2 (en) | 2011-10-19 |
WO2010071873A3 (en) | 2010-09-10 |
TWI378836B (en) | 2012-12-11 |
KR101428152B1 (ko) | 2014-08-08 |
JP2012512758A (ja) | 2012-06-07 |
WO2010071873A2 (en) | 2010-06-24 |
US8960177B2 (en) | 2015-02-24 |
MY153330A (en) | 2015-01-29 |
CN102257604B (zh) | 2013-07-03 |
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