DE69837251D1 - Elektrochemische Abscheidung von Metallen in Halbleiteranordnungen - Google Patents

Elektrochemische Abscheidung von Metallen in Halbleiteranordnungen

Info

Publication number
DE69837251D1
DE69837251D1 DE69837251T DE69837251T DE69837251D1 DE 69837251 D1 DE69837251 D1 DE 69837251D1 DE 69837251 T DE69837251 T DE 69837251T DE 69837251 T DE69837251 T DE 69837251T DE 69837251 D1 DE69837251 D1 DE 69837251D1
Authority
DE
Germany
Prior art keywords
metals
semiconductor devices
electrochemical deposition
electrochemical
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69837251T
Other languages
English (en)
Other versions
DE69837251T2 (de
Inventor
Mehdi Moussavi
Yves Morand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, STMicroelectronics SA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE69837251D1 publication Critical patent/DE69837251D1/de
Application granted granted Critical
Publication of DE69837251T2 publication Critical patent/DE69837251T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69837251T 1997-12-30 1998-12-29 Elektrochemische Abscheidung von Metallen in Halbleiteranordnungen Expired - Lifetime DE69837251T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9716855 1997-12-30
FR9716855A FR2773262B1 (fr) 1997-12-30 1997-12-30 Procede de formation d'elements conducteurs dans un circuit integre

Publications (2)

Publication Number Publication Date
DE69837251D1 true DE69837251D1 (de) 2007-04-19
DE69837251T2 DE69837251T2 (de) 2007-11-15

Family

ID=9515425

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69837251T Expired - Lifetime DE69837251T2 (de) 1997-12-30 1998-12-29 Elektrochemische Abscheidung von Metallen in Halbleiteranordnungen

Country Status (5)

Country Link
US (1) US6228765B1 (de)
EP (1) EP0933812B1 (de)
JP (1) JPH11251436A (de)
DE (1) DE69837251T2 (de)
FR (1) FR2773262B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010051431A1 (en) * 1999-07-12 2001-12-13 Saket Chadda Fabrication process for dishing-free cu damascene structures
US6355153B1 (en) * 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6861758B2 (en) 2002-08-30 2005-03-01 Intel Corporation Structure and manufacturing process of localized shunt to reduce electromigration failure of copper dual damascene process
US7375027B2 (en) 2004-10-12 2008-05-20 Promos Technologies Inc. Method of providing contact via to a surface
US9287228B2 (en) * 2014-06-26 2016-03-15 Lam Research Ag Method for etching semiconductor structures and etching composition for use in such a method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0144752B1 (de) * 1983-12-01 1989-03-22 EM Microelectronic-Marin SA Anordnung für die elektrolytische Abscheidung eines Leitermaterials auf integrierten Schaltungsscheiben
US5098860A (en) * 1990-05-07 1992-03-24 The Boeing Company Method of fabricating high-density interconnect structures having tantalum/tantalum oxide layers
DE4331185C1 (de) * 1993-09-14 1994-12-15 Siemens Ag Verfahren zur Kontaktlochauffüllung in einem Halbleiterschichtaufbau
DE19828676A1 (de) 1998-06-26 2000-01-27 Dlw Ag Flexibles, mehrschichtiges Flächengebilde mit verstärkter Deckschicht

Also Published As

Publication number Publication date
JPH11251436A (ja) 1999-09-17
DE69837251T2 (de) 2007-11-15
EP0933812A1 (de) 1999-08-04
FR2773262B1 (fr) 2000-03-10
EP0933812B1 (de) 2007-03-07
FR2773262A1 (fr) 1999-07-02
US6228765B1 (en) 2001-05-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition