ID26547A - Bahan logam untuk onderdil elektronik, onderdil elektronik, aparatus elektronik dan metode pemrosesan bahan logam - Google Patents

Bahan logam untuk onderdil elektronik, onderdil elektronik, aparatus elektronik dan metode pemrosesan bahan logam

Info

Publication number
ID26547A
ID26547A IDP20000581A ID20000581A ID26547A ID 26547 A ID26547 A ID 26547A ID P20000581 A IDP20000581 A ID P20000581A ID 20000581 A ID20000581 A ID 20000581A ID 26547 A ID26547 A ID 26547A
Authority
ID
Indonesia
Prior art keywords
electronic
onderdil
methods
aparatus
metal materials
Prior art date
Application number
IDP20000581A
Other languages
English (en)
Indonesian (id)
Inventor
Takashi Ueno
Katsuhisa Aratani
Original Assignee
Sony Corp Cs
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp Cs filed Critical Sony Corp Cs
Publication of ID26547A publication Critical patent/ID26547A/id

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53247—Noble-metal alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Conductive Materials (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Weting (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Liquid Crystal (AREA)
IDP20000581A 1999-07-12 2000-07-11 Bahan logam untuk onderdil elektronik, onderdil elektronik, aparatus elektronik dan metode pemrosesan bahan logam ID26547A (id)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19687899 1999-07-12
JP2000092980A JP4247863B2 (ja) 1999-07-12 2000-03-28 電子部品用金属材料、電子部品用配線材料、電子部品用電極材料、電子部品、電子機器、金属材料の加工方法及び電子光学部品

Publications (1)

Publication Number Publication Date
ID26547A true ID26547A (id) 2001-01-18

Family

ID=26510042

Family Applications (1)

Application Number Title Priority Date Filing Date
IDP20000581A ID26547A (id) 1999-07-12 2000-07-11 Bahan logam untuk onderdil elektronik, onderdil elektronik, aparatus elektronik dan metode pemrosesan bahan logam

Country Status (11)

Country Link
US (1) US6723281B1 (zh)
EP (1) EP1069194B1 (zh)
JP (1) JP4247863B2 (zh)
KR (1) KR100715405B1 (zh)
CN (1) CN1165990C (zh)
CA (1) CA2313767C (zh)
DE (1) DE60022951T2 (zh)
ID (1) ID26547A (zh)
MX (1) MXPA00006720A (zh)
MY (1) MY127011A (zh)
TW (1) TW457650B (zh)

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US6852384B2 (en) 1998-06-22 2005-02-08 Han H. Nee Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7316837B2 (en) 2000-07-21 2008-01-08 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
US7314659B2 (en) 2000-07-21 2008-01-01 Target Technology Company, Llc Metal alloys for the reflective or semi-reflective layer of an optical storage medium
US7374805B2 (en) 2000-07-21 2008-05-20 Target Technology Company, Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
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DE60230728D1 (de) 2001-03-16 2009-02-26 Ishifuku Metal Ind Optisches Plattenmedium, reflektierende STN-Flüssigkristallanzeige und organische EL-Anzeige
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JP3804858B2 (ja) 2001-08-31 2006-08-02 ソニー株式会社 有機電界発光素子およびその製造方法
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CN100365737C (zh) * 2002-05-17 2008-01-30 出光兴产株式会社 布线材料和使用该材料的布线板
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US20070131276A1 (en) * 2003-01-16 2007-06-14 Han Nee Photo-voltaic cells including solar cells incorporating silver-alloy reflective and/or transparent conductive surfaces
KR20040073142A (ko) * 2003-02-13 2004-08-19 키스타 주식회사 박막 트랜지스터 액정표시장치의 반사판에 사용되는박막용 Ａｇ 합금
TWI368819B (en) 2003-04-18 2012-07-21 Target Technology Co Llc Metal alloys for the reflective or the semi-reflective layer of an optical storage medium
KR100960687B1 (ko) 2003-06-24 2010-06-01 엘지디스플레이 주식회사 구리(또는 구리합금층)를 포함하는 이중금속층을 일괄식각하기위한 식각액
DE102004040778B4 (de) * 2004-08-23 2011-11-24 Umicore Ag & Co. Kg Silberhartlotlegierungen
EP1793013B1 (en) * 2005-12-05 2017-07-19 Rohm and Haas Electronic Materials LLC Metallization of dielectrics
DE102006003279B4 (de) * 2006-01-23 2010-03-25 W.C. Heraeus Gmbh Sputtertarget mit hochschmelzender Phase
JP2008130799A (ja) * 2006-11-21 2008-06-05 Sharp Corp 半導体発光素子および半導体発光素子の製造方法
KR101001700B1 (ko) * 2007-03-30 2010-12-15 엠케이전자 주식회사 반도체 패키지용 은합금 와이어
JP5228595B2 (ja) * 2008-04-21 2013-07-03 ソニー株式会社 半導体発光素子及びその製造方法、並びに、積層構造体及びその形成方法
CN102130069A (zh) * 2008-07-14 2011-07-20 Mk电子株式会社 用于半导体封装的Ag基合金引线
US20100239455A1 (en) * 2009-03-23 2010-09-23 Lee Jun-Der Composite alloy bonding wire and manufacturing method thereof
CN102154574A (zh) * 2010-10-18 2011-08-17 东莞市正奇电子有限公司 半导体组件连接用合金线
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JP5472353B2 (ja) * 2012-03-27 2014-04-16 三菱マテリアル株式会社 銀系円筒ターゲット及びその製造方法
CN103985699A (zh) * 2013-02-08 2014-08-13 大瑞科技股份有限公司 银合金线
CN103194636A (zh) * 2013-03-29 2013-07-10 上海中希合金有限公司 含钯的银合金自润滑电接触材料及复合带材
CN103146945A (zh) * 2013-03-29 2013-06-12 上海中希合金有限公司 用于微电机整流子的自润滑电接触材料
CN104685977B (zh) * 2013-05-13 2016-09-28 株式会社爱发科 装载装置及其制造方法
KR101535412B1 (ko) * 2013-09-04 2015-07-24 엠케이전자 주식회사 은 합금 본딩 와이어 및 그의 제조 방법
JP2015109633A (ja) 2013-10-22 2015-06-11 株式会社大真空 圧電振動素子と当該圧電振動素子を用いた圧電デバイスおよび、前記圧電振動素子の製造方法と当該圧電振動素子を用いた圧電デバイスの製造方法
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JP6574714B2 (ja) * 2016-01-25 2019-09-11 株式会社コベルコ科研 配線構造およびスパッタリングターゲット
CN108062991B (zh) * 2016-11-08 2021-01-26 光洋应用材料科技股份有限公司 银合金线材
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Also Published As

Publication number Publication date
DE60022951T2 (de) 2006-07-20
MXPA00006720A (es) 2007-05-08
EP1069194A1 (en) 2001-01-17
CA2313767A1 (en) 2001-01-12
JP2001192752A (ja) 2001-07-17
CN1280387A (zh) 2001-01-17
CA2313767C (en) 2010-09-28
KR20010029930A (ko) 2001-04-16
KR100715405B1 (ko) 2007-05-08
CN1165990C (zh) 2004-09-08
EP1069194B1 (en) 2005-10-05
DE60022951D1 (de) 2005-11-10
TW457650B (en) 2001-10-01
MY127011A (en) 2006-11-30
JP4247863B2 (ja) 2009-04-02
US6723281B1 (en) 2004-04-20

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