DE10080124T1 - Plasmaverarbeitungssystem und Verfahren - Google Patents

Plasmaverarbeitungssystem und Verfahren

Info

Publication number
DE10080124T1
DE10080124T1 DE10080124T DE10080124T DE10080124T1 DE 10080124 T1 DE10080124 T1 DE 10080124T1 DE 10080124 T DE10080124 T DE 10080124T DE 10080124 T DE10080124 T DE 10080124T DE 10080124 T1 DE10080124 T1 DE 10080124T1
Authority
DE
Germany
Prior art keywords
processing system
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10080124T
Other languages
English (en)
Other versions
DE10080124B3 (de
Inventor
Terry Bluck
James H Rogers
Jun Xie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
INTEV AC Inc
Original Assignee
INTEV AC Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by INTEV AC Inc filed Critical INTEV AC Inc
Publication of DE10080124T1 publication Critical patent/DE10080124T1/de
Application granted granted Critical
Publication of DE10080124B3 publication Critical patent/DE10080124B3/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0822—Multiple sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3142—Ion plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
DE10080124T 1999-01-22 2000-01-10 Substratverarbeitungssystem, dessen Verwendung sowie Verfahren zur Bearbeitung eines Substrates Expired - Fee Related DE10080124B3 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/235,943 1999-01-22
US09/235,943 US6101972A (en) 1998-05-13 1999-01-22 Plasma processing system and method
PCT/US2000/000545 WO2000043566A1 (en) 1999-01-22 2000-01-10 Plasma processing system and method

Publications (2)

Publication Number Publication Date
DE10080124T1 true DE10080124T1 (de) 2001-05-10
DE10080124B3 DE10080124B3 (de) 2012-11-08

Family

ID=22887489

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10080124T Expired - Fee Related DE10080124B3 (de) 1999-01-22 2000-01-10 Substratverarbeitungssystem, dessen Verwendung sowie Verfahren zur Bearbeitung eines Substrates

Country Status (6)

Country Link
US (1) US6101972A (de)
JP (1) JP3547402B2 (de)
KR (1) KR100354413B1 (de)
CN (1) CN1158404C (de)
DE (1) DE10080124B3 (de)
WO (1) WO2000043566A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW455912B (en) * 1999-01-22 2001-09-21 Sony Corp Method and apparatus for film deposition
JP4346741B2 (ja) * 1999-08-05 2009-10-21 キヤノンアネルバ株式会社 発熱体ｃｖｄ装置及び付着膜の除去方法
US6919001B2 (en) * 2000-05-01 2005-07-19 Intevac, Inc. Disk coating system
WO2002075801A2 (en) * 2000-11-07 2002-09-26 Tokyo Electron Limited Method of fabricating oxides with low defect densities
JP2005516752A (ja) * 2002-01-30 2005-06-09 ナムローゼ・フェンノートシャップ・ベーカート・ソシエテ・アノニム プラズマが存在する真空環境の加熱
US20070119375A1 (en) * 2005-11-30 2007-05-31 Darrin Leonhardt Dual large area plasma processing system
CN101802985A (zh) * 2007-09-14 2010-08-11 高通Mems科技公司 用于微机电系统生产的蚀刻工艺
US8349196B2 (en) * 2007-12-06 2013-01-08 Intevac, Inc. System and method for commercial fabrication of patterned media
US8028653B2 (en) * 2007-12-06 2011-10-04 Hitachi Global Storage Technologies Netherlands, B.V. System, method and apparatus for filament and support used in plasma-enhanced chemical vapor deposition for reducing carbon voids on media disks in disk drives
US20090199768A1 (en) * 2008-02-12 2009-08-13 Steven Verhaverbeke Magnetic domain patterning using plasma ion implantation
US20090201722A1 (en) * 2008-02-12 2009-08-13 Kamesh Giridhar Method including magnetic domain patterning using plasma ion implantation for mram fabrication
US8551578B2 (en) * 2008-02-12 2013-10-08 Applied Materials, Inc. Patterning of magnetic thin film using energized ions and thermal excitation
US8535766B2 (en) * 2008-10-22 2013-09-17 Applied Materials, Inc. Patterning of magnetic thin film using energized ions
US8563407B2 (en) * 2009-04-08 2013-10-22 Varian Semiconductor Equipment Associates, Inc. Dual sided workpiece handling
CN102280348A (zh) * 2010-06-08 2011-12-14 江苏天瑞仪器股份有限公司 电子轰击离子源控制系统
JP6019343B2 (ja) * 2012-07-27 2016-11-02 株式会社ユーテック プラズマｃｖｄ装置、磁気記録媒体の製造方法及び成膜方法
DE102012024340A1 (de) * 2012-12-13 2014-06-18 Oerlikon Trading Ag, Trübbach Plasmaquelle
WO2015108528A1 (en) * 2014-01-17 2015-07-23 Seagate Technology Llc Etching source installable in a storage medium processing tool
WO2018184023A1 (en) * 2017-03-31 2018-10-04 Duralar Technologies, Llc Systems and methods for coating surfaces
CN110670077B (zh) * 2019-10-29 2022-01-25 苏州创瑞机电科技有限公司 线圈外壳的防腐蚀表面处理方法及耐腐蚀线圈外壳
CN112558183A (zh) * 2020-12-02 2021-03-26 中国石油天然气集团有限公司 基于单片机的中子发生器短节模拟装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4183797A (en) * 1978-12-22 1980-01-15 International Business Machines Corporation Two-sided bias sputter deposition method and apparatus
US4500407A (en) * 1983-07-19 1985-02-19 Varian Associates, Inc. Disk or wafer handling and coating system
GB2208753B (en) * 1987-08-13 1991-06-26 Commw Of Australia Improvements in plasma generators
DE3920835C2 (de) * 1989-06-24 1997-12-18 Leybold Ag Einrichtung zum Beschichten von Substraten
JP2834797B2 (ja) * 1989-10-25 1998-12-14 株式会社リコー 薄膜形成装置
CA2052080C (en) * 1990-10-10 1997-01-14 Jesse N. Matossian Plasma source arrangement for ion implantation
US5378285A (en) * 1993-02-10 1995-01-03 Matsushita Electric Industrial Co., Ltd. Apparatus for forming a diamond-like thin film
DE4413655A1 (de) * 1994-04-20 1995-10-26 Leybold Ag Beschichtungsanlage
JPH10208651A (ja) * 1997-01-20 1998-08-07 Nissin Electric Co Ltd イオン源装置およびそれを用いたイオン注入方法
US6203862B1 (en) * 1998-05-13 2001-03-20 Intevac, Inc. Processing systems with dual ion sources

Also Published As

Publication number Publication date
KR20010089116A (ko) 2001-09-29
DE10080124B3 (de) 2012-11-08
WO2000043566A1 (en) 2000-07-27
JP3547402B2 (ja) 2004-07-28
KR100354413B1 (ko) 2002-09-30
JP2002535490A (ja) 2002-10-22
CN1158404C (zh) 2004-07-21
CN1293717A (zh) 2001-05-02
US6101972A (en) 2000-08-15

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Legal Events

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8110 Request for examination paragraph 44
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R082 Change of representative

Representative=s name: BLUMBACH ZINNGREBE, DE

Representative=s name: BLUMBACH ZINNGREBE PATENT- UND RECHTSANWAELTE, DE

Representative=s name: BLUMBACH ZINNGREBE PATENT- UND RECHTSANWAELTE , DE

R020 Patent grant now final

Effective date: 20130209

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee