DE60036631D1 - Plasmabehandlungsapparatur und plasmabehandlungsverfahren - Google Patents

Plasmabehandlungsapparatur und plasmabehandlungsverfahren

Info

Publication number
DE60036631D1
DE60036631D1 DE60036631T DE60036631T DE60036631D1 DE 60036631 D1 DE60036631 D1 DE 60036631D1 DE 60036631 T DE60036631 T DE 60036631T DE 60036631 T DE60036631 T DE 60036631T DE 60036631 D1 DE60036631 D1 DE 60036631D1
Authority
DE
Germany
Prior art keywords
plasma treatment
treatment apparatus
treatment method
plasma
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60036631T
Other languages
English (en)
Other versions
DE60036631T2 (de
Inventor
Tomoyasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE60036631D1 publication Critical patent/DE60036631D1/de
Publication of DE60036631T2 publication Critical patent/DE60036631T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
DE60036631T 1999-08-20 2000-08-11 Plasmabehandlungsapparatur und plasmabehandlungsverfahren Expired - Lifetime DE60036631T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP23419899 1999-08-20
JP23419899A JP4493756B2 (ja) 1999-08-20 1999-08-20 プラズマ処理装置およびプラズマ処理方法
PCT/JP2000/005408 WO2001015212A1 (fr) 1999-08-20 2000-08-11 Appareil de traitement au plasma et procede de traitement au plasma

Publications (2)

Publication Number Publication Date
DE60036631D1 true DE60036631D1 (de) 2007-11-15
DE60036631T2 DE60036631T2 (de) 2008-07-17

Family

ID=16967234

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60036631T Expired - Lifetime DE60036631T2 (de) 1999-08-20 2000-08-11 Plasmabehandlungsapparatur und plasmabehandlungsverfahren

Country Status (7)

Country Link
US (1) US7153387B1 (de)
EP (1) EP1213749B1 (de)
JP (1) JP4493756B2 (de)
KR (1) KR100674625B1 (de)
DE (1) DE60036631T2 (de)
TW (1) TW463264B (de)
WO (1) WO2001015212A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3846881B2 (ja) * 2003-04-04 2006-11-15 日本エー・エス・エム株式会社 プラズマ処理装置及びシリコン酸化膜を形成する方法
JP4692878B2 (ja) * 2005-05-31 2011-06-01 富士電機システムズ株式会社 プラズマｃｖｄ装置
KR101138609B1 (ko) * 2005-09-09 2012-04-26 주성엔지니어링(주) 효율적인 라디칼 생성을 위한 플라즈마 발생장치
KR100720964B1 (ko) * 2005-11-16 2007-05-23 주식회사 래디언테크 급전 장치와 이를 포함하는 플라즈마 처리 장치
US7829463B2 (en) 2006-03-30 2010-11-09 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
JP5064707B2 (ja) * 2006-03-30 2012-10-31 東京エレクトロン株式会社 プラズマ処理装置
JP5116983B2 (ja) * 2006-03-30 2013-01-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR101166988B1 (ko) * 2007-12-25 2012-07-24 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 챔버의 전극에 대한 비대칭 ｒｆ 구동
JP5749020B2 (ja) * 2008-01-31 2015-07-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｒｆ電力をプラズマチャンバに結合するための装置
JP5157741B2 (ja) * 2008-08-12 2013-03-06 コニカミノルタホールディングス株式会社 プラズマ放電処理装置
CN102365906B (zh) * 2009-02-13 2016-02-03 应用材料公司 用于等离子体腔室电极的rf总线与rf回流总线
US9039864B2 (en) * 2009-09-29 2015-05-26 Applied Materials, Inc. Off-center ground return for RF-powered showerhead
JP5851681B2 (ja) * 2009-10-27 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
JP5606063B2 (ja) * 2009-12-28 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
JP5592129B2 (ja) * 2010-03-16 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置
WO2013047575A1 (ja) * 2011-09-30 2013-04-04 東京エレクトロン株式会社 上部電極、プラズマ処理装置及び電界強度分布の制御方法
US9853579B2 (en) * 2013-12-18 2017-12-26 Applied Materials, Inc. Rotatable heated electrostatic chuck
US10971338B2 (en) * 2017-09-06 2021-04-06 Toshiba Mitsubishi-Electric Industrial Systems Corporation Active gas generating apparatus
JP6988411B2 (ja) * 2017-12-01 2022-01-05 日新電機株式会社 プラズマ処理装置
CN108461387B (zh) * 2018-03-19 2020-06-19 北京北方华创微电子装备有限公司 功率馈入机构、旋转基座装置及半导体加工设备
WO2022170367A1 (en) * 2021-02-08 2022-08-11 Aa Plasma Llc Rotational plasma generator and methods for treating thin-film fluids
TWI817614B (zh) * 2022-07-18 2023-10-01 友威科技股份有限公司 具定位電極的連續電漿製程系統

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03206613A (ja) 1990-01-09 1991-09-10 Fujitsu Ltd 低温ドライエッチング装置
JP2665077B2 (ja) * 1991-07-05 1997-10-22 九州日本電気株式会社 気相成長装置
JPH0529273A (ja) * 1991-07-22 1993-02-05 Kobe Steel Ltd プラズマ処理装置
JPH05198390A (ja) * 1992-01-22 1993-08-06 Jeol Ltd 高周波プラズマ装置
JP3085021B2 (ja) * 1993-05-21 2000-09-04 株式会社日立製作所 マイクロ波プラズマ処理装置
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JP3425009B2 (ja) * 1995-05-30 2003-07-07 アネルバ株式会社 表面処理装置
JP3238082B2 (ja) * 1996-05-16 2001-12-10 シャープ株式会社 電子デバイス製造装置
US6155202A (en) * 1997-11-28 2000-12-05 Alps Electric Co., Ltd. Plasma processing apparatus, matching box, and feeder
TW434636B (en) 1998-07-13 2001-05-16 Applied Komatsu Technology Inc RF matching network with distributed outputs
JP2000260598A (ja) * 1999-03-12 2000-09-22 Sharp Corp プラズマ発生装置

Also Published As

Publication number Publication date
EP1213749A4 (de) 2005-12-21
WO2001015212A1 (fr) 2001-03-01
JP2001060581A (ja) 2001-03-06
KR20020027561A (ko) 2002-04-13
EP1213749A1 (de) 2002-06-12
DE60036631T2 (de) 2008-07-17
TW463264B (en) 2001-11-11
US7153387B1 (en) 2006-12-26
EP1213749B1 (de) 2007-10-03
KR100674625B1 (ko) 2007-01-25
JP4493756B2 (ja) 2010-06-30

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: TOMOYASU, MASAYUKI, NIRASAKI-SHI YAMANASHI 407, JP

8364 No opposition during term of opposition